ATE440381T1 - HYBRID ESD CLAMP - Google Patents
HYBRID ESD CLAMPInfo
- Publication number
- ATE440381T1 ATE440381T1 AT05700212T AT05700212T ATE440381T1 AT E440381 T1 ATE440381 T1 AT E440381T1 AT 05700212 T AT05700212 T AT 05700212T AT 05700212 T AT05700212 T AT 05700212T AT E440381 T1 ATE440381 T1 AT E440381T1
- Authority
- AT
- Austria
- Prior art keywords
- dmos
- ground
- current
- resistor
- diode
- Prior art date
Links
- 230000003071 parasitic effect Effects 0.000 abstract 1
- 239000004065 semiconductor Substances 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/7801—DMOS transistors, i.e. MISFETs with a channel accommodating body or base region adjoining a drain drift region
- H01L29/7802—Vertical DMOS transistors, i.e. VDMOS transistors
- H01L29/7809—Vertical DMOS transistors, i.e. VDMOS transistors having both source and drain contacts on the same surface, i.e. Up-Drain VDMOS transistors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/0203—Particular design considerations for integrated circuits
- H01L27/0248—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection
- H01L27/0251—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection for MOS devices
- H01L27/0266—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection for MOS devices using field effect transistors as protective elements
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/7801—DMOS transistors, i.e. MISFETs with a channel accommodating body or base region adjoining a drain drift region
- H01L29/7802—Vertical DMOS transistors, i.e. VDMOS transistors
- H01L29/7803—Vertical DMOS transistors, i.e. VDMOS transistors structurally associated with at least one other device
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/10—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode not carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
- H01L29/1095—Body region, i.e. base region, of DMOS transistors or IGBTs
Landscapes
- Power Engineering (AREA)
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- General Physics & Mathematics (AREA)
- Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Ceramic Engineering (AREA)
- Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
- Insulated Gate Type Field-Effect Transistor (AREA)
- Semiconductor Integrated Circuits (AREA)
- Adhesives Or Adhesive Processes (AREA)
- Transition And Organic Metals Composition Catalysts For Addition Polymerization (AREA)
- Developing Agents For Electrophotography (AREA)
Abstract
A circuit for protecting a semiconductor from electrostatic discharge events includes a Zener diode (21) in series with a resistor (22) between a power line HV VDD and a ground fine HV VSS. A gate of a DMOS device (23) is connected to a node between the diode and the resistor. The drain and source of the DMOS are connected between the power lines. During an ESD event, the gate voltage of the DMOS increases and the ESD current will be discharged through the DMOS to ground. When the current exceeds the capacity of the channel of the DMOS, a parasitic bipolar transistor or transistors associated with the DMOS device acts in a controlled snapback to discharge the current to ground. The use of a vertical DMOS (VDMOS) instead of a lateral DMOS (LDMOS), can reduce the area of the device and improve the protection.
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
PCT/BE2005/000003 WO2006072148A1 (en) | 2005-01-07 | 2005-01-07 | Hybrid esd clamp |
Publications (1)
Publication Number | Publication Date |
---|---|
ATE440381T1 true ATE440381T1 (en) | 2009-09-15 |
Family
ID=34960391
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
AT05700212T ATE440381T1 (en) | 2005-01-07 | 2005-01-07 | HYBRID ESD CLAMP |
Country Status (6)
Country | Link |
---|---|
US (1) | US7804670B2 (en) |
EP (1) | EP1834359B1 (en) |
AT (1) | ATE440381T1 (en) |
DE (1) | DE602005016156D1 (en) |
IL (1) | IL184440A (en) |
WO (1) | WO2006072148A1 (en) |
Families Citing this family (17)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US8218276B2 (en) * | 2006-05-31 | 2012-07-10 | Alpha and Omega Semiconductor Inc. | Transient voltage suppressor (TVS) with improved clamping voltage |
JP2010278188A (en) * | 2009-05-28 | 2010-12-09 | Renesas Electronics Corp | Semiconductor integrated circuit device |
US20120154956A1 (en) * | 2010-12-17 | 2012-06-21 | National Semiconductor Corporation | Self protected snapback device driven by driver circuitry using high side pull-up avalanche diode |
CN102157518B (en) | 2011-01-07 | 2012-05-30 | 北方工业大学 | Novel double-surge protection device with single-chip integration and manufacturing method thereof |
EP2515334B1 (en) * | 2011-04-20 | 2013-11-20 | Nxp B.V. | ESD protection circuit |
JP5801609B2 (en) * | 2011-06-03 | 2015-10-28 | ルネサスエレクトロニクス株式会社 | Protection circuit element |
US8436418B2 (en) * | 2011-06-20 | 2013-05-07 | United Microelectronics Corp. | High-voltage semiconductor device with electrostatic discharge protection |
US8630072B2 (en) | 2011-07-29 | 2014-01-14 | Silicon Laboratories Inc. | Circuits including a diode string comprised of bipolar stages having an adjustable pseudo beta for ESD protection |
US8520347B2 (en) | 2011-07-29 | 2013-08-27 | Silicon Laboratories Inc. | Circuit for ESD protection including dynamically terminated diode strings comprised of bipolar devices |
US8854103B2 (en) * | 2012-03-28 | 2014-10-07 | Infineon Technologies Ag | Clamping circuit |
CN103578992B (en) * | 2012-07-25 | 2016-01-13 | 北大方正集团有限公司 | A kind of integrated VDMOS chip and preparation method thereof |
KR101926607B1 (en) | 2012-09-28 | 2018-12-07 | 삼성전자 주식회사 | Clamping Circuit, Semiconductor having the same and Clamping method thereof |
KR102016986B1 (en) | 2013-01-25 | 2019-09-02 | 삼성전자주식회사 | Diode based on LDMOS transistor and electrostatic discharge protection circuit including the same |
KR102495452B1 (en) | 2016-06-29 | 2023-02-02 | 삼성전자주식회사 | Semiconductor device |
US10276558B1 (en) | 2017-10-30 | 2019-04-30 | International Business Machines Corporation | Electrostatic discharge protection using vertical fin CMOS technology |
TWI804736B (en) * | 2020-03-25 | 2023-06-11 | 立錡科技股份有限公司 | Power device having lateral insulated gate bipolar transistor (ligbt) and manufacturing method thereof |
US11532610B2 (en) | 2020-06-24 | 2022-12-20 | Amazing Microelectronic Corp. | Electrostatic discharge protection structure and electrostatic discharge protection circuit with low parasitic capacitance thereof |
Family Cites Families (11)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4630162A (en) * | 1984-07-31 | 1986-12-16 | Texas Instruments Incorporated | ESD input protection circuit |
FR2698486B1 (en) * | 1992-11-24 | 1995-03-10 | Sgs Thomson Microelectronics | Direct overvoltage protection structure for vertical semiconductor component. |
US5528188A (en) * | 1995-03-13 | 1996-06-18 | International Business Machines Corporation | Electrostatic discharge suppression circuit employing low-voltage triggering silicon-controlled rectifier |
US5917220A (en) * | 1996-12-31 | 1999-06-29 | Stmicroelectronics, Inc. | Integrated circuit with improved overvoltage protection |
US5982217A (en) * | 1997-02-19 | 1999-11-09 | Texas Instruments Incorporated | PNP driven NMOS ESD protection circuit |
US6064249A (en) * | 1997-06-20 | 2000-05-16 | Texas Instruments Incorporated | Lateral DMOS design for ESD protection |
TW373316B (en) * | 1998-01-09 | 1999-11-01 | Winbond Electronic Corp | Electrostatic discharge protect circuit having erasable coding ROM device |
EP1058308B8 (en) * | 1999-06-01 | 2010-04-07 | Imec | Intermediate trigger voltage ESD protection device |
JP2001358297A (en) * | 2000-06-14 | 2001-12-26 | Nec Corp | Static electricity protection circuit |
US7224560B2 (en) * | 2003-02-13 | 2007-05-29 | Medtronic, Inc. | Destructive electrical transient protection |
US6693339B1 (en) * | 2003-03-14 | 2004-02-17 | Motorola, Inc. | Semiconductor component and method of manufacturing same |
-
2005
- 2005-01-07 EP EP05700212A patent/EP1834359B1/en not_active Expired - Fee Related
- 2005-01-07 AT AT05700212T patent/ATE440381T1/en not_active IP Right Cessation
- 2005-01-07 US US11/794,472 patent/US7804670B2/en active Active
- 2005-01-07 DE DE602005016156T patent/DE602005016156D1/en active Active
- 2005-01-07 WO PCT/BE2005/000003 patent/WO2006072148A1/en active Application Filing
-
2007
- 2007-07-05 IL IL184440A patent/IL184440A/en active IP Right Grant
Also Published As
Publication number | Publication date |
---|---|
EP1834359A1 (en) | 2007-09-19 |
IL184440A (en) | 2012-01-31 |
EP1834359B1 (en) | 2009-08-19 |
IL184440A0 (en) | 2007-10-31 |
WO2006072148A1 (en) | 2006-07-13 |
US20090268357A1 (en) | 2009-10-29 |
DE602005016156D1 (en) | 2009-10-01 |
US7804670B2 (en) | 2010-09-28 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
RER | Ceased as to paragraph 5 lit. 3 law introducing patent treaties |