ATE400921T1 - Cmos schaltung mit hoher eingangsimpedanz - Google Patents

Cmos schaltung mit hoher eingangsimpedanz

Info

Publication number
ATE400921T1
ATE400921T1 AT03076181T AT03076181T ATE400921T1 AT E400921 T1 ATE400921 T1 AT E400921T1 AT 03076181 T AT03076181 T AT 03076181T AT 03076181 T AT03076181 T AT 03076181T AT E400921 T1 ATE400921 T1 AT E400921T1
Authority
AT
Austria
Prior art keywords
input impedance
high input
cmos circuit
circuit
buffer amplifier
Prior art date
Application number
AT03076181T
Other languages
English (en)
Inventor
Adrianus Maria Lafort
Original Assignee
Sonion Nederland Bv
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sonion Nederland Bv filed Critical Sonion Nederland Bv
Application granted granted Critical
Publication of ATE400921T1 publication Critical patent/ATE400921T1/de

Links

Classifications

    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
    • H03F3/181—Low-frequency amplifiers, e.g. audio preamplifiers
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F1/00—Details of amplifiers with only discharge tubes, only semiconductor devices or only unspecified devices as amplifying elements
    • H03F1/30—Modifications of amplifiers to reduce influence of variations of temperature or supply voltage or other physical parameters
    • H03F1/301—Modifications of amplifiers to reduce influence of variations of temperature or supply voltage or other physical parameters in MOSFET amplifiers

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Multimedia (AREA)
  • Amplifiers (AREA)
  • Handcart (AREA)
  • Heterocyclic Carbon Compounds Containing A Hetero Ring Having Oxygen Or Sulfur (AREA)
  • Details Of Connecting Devices For Male And Female Coupling (AREA)
  • Networks Using Active Elements (AREA)
AT03076181T 2002-04-18 2003-04-22 Cmos schaltung mit hoher eingangsimpedanz ATE400921T1 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US10/125,245 US7149317B2 (en) 2002-04-18 2002-04-18 CMOS high impedance circuit

Publications (1)

Publication Number Publication Date
ATE400921T1 true ATE400921T1 (de) 2008-07-15

Family

ID=28674712

Family Applications (1)

Application Number Title Priority Date Filing Date
AT03076181T ATE400921T1 (de) 2002-04-18 2003-04-22 Cmos schaltung mit hoher eingangsimpedanz

Country Status (5)

Country Link
US (1) US7149317B2 (de)
EP (1) EP1355416B1 (de)
AT (1) ATE400921T1 (de)
DE (1) DE60321986D1 (de)
DK (1) DK1355416T3 (de)

Families Citing this family (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP1553696B1 (de) * 2004-01-12 2008-10-08 Sonion A/S Verstärkerschaltung für kapazitive Umformer
EP1742506B1 (de) 2005-07-06 2013-05-22 Epcos Pte Ltd Mikrofonanordnung mit P-typ Vorverstärkerseingangsstufe
US8094846B2 (en) * 2006-12-18 2012-01-10 Epcos Pte Ltd. Deep sub-micron MOS preamplifier with thick-oxide input stage transistor
US8401208B2 (en) * 2007-11-14 2013-03-19 Infineon Technologies Ag Anti-shock methods for processing capacitive sensor signals
KR101183986B1 (ko) 2008-12-19 2012-09-19 한국전자통신연구원 고입력 임피던스를 갖는 리드아웃 회로
US8536924B2 (en) * 2010-09-02 2013-09-17 Fairchild Semiconductor Corporation High-impedance network
US8829991B2 (en) 2011-01-14 2014-09-09 Fairchild Semiconductor Corporation DC offset tracking circuit
US8935450B2 (en) * 2011-09-16 2015-01-13 Nxp B.V. Network communications circuit, system and method
FR3012699A1 (fr) * 2013-10-31 2015-05-01 St Microelectronics Tours Sas Circuit de commande pour diodes en demi-pont
US10541683B2 (en) 2016-03-07 2020-01-21 Infineon Technologies Ag System and method for high-ohmic circuit
EP3324649A1 (de) 2016-11-18 2018-05-23 Sonion Nederland B.V. Wandler mit hoher empfindlichkeit
EP3324538A1 (de) 2016-11-18 2018-05-23 Sonion Nederland B.V. Messschaltung mit einer verstärkerschaltung
US20180145643A1 (en) * 2016-11-18 2018-05-24 Sonion Nederland B.V. Circuit for providing a high and a low impedance and a system comprising the circuit
US10327072B2 (en) 2016-11-18 2019-06-18 Sonion Nederland B.V. Phase correcting system and a phase correctable transducer system

Family Cites Families (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4748445A (en) * 1983-07-13 1988-05-31 Citizen Watch Co., Ltd. Matrix display panel having a diode ring structure as a resistive element
US5097224A (en) 1991-04-11 1992-03-17 Telex Communications, Inc. Self-biasing, low noise amplifier of extended dynamic range
JP2786104B2 (ja) 1994-02-28 1998-08-13 日本電気株式会社 半導体装置
US5446413A (en) 1994-05-20 1995-08-29 Knowles Electronics, Inc. Impedance circuit for a miniature hearing aid
US5589799A (en) 1994-09-29 1996-12-31 Tibbetts Industries, Inc. Low noise amplifier for microphone
JP3371045B2 (ja) 1994-12-26 2003-01-27 株式会社オーディオテクニカ コンデンサマイクロホン
JPH0951238A (ja) 1995-08-09 1997-02-18 Mitsubishi Electric Corp マイクロ波増幅器回路
US5830788A (en) * 1996-06-21 1998-11-03 Matsushita Electric Industrial Co., Ltd. Method for forming complementary MOS device having asymmetric region in channel region
US6023194A (en) 1997-05-23 2000-02-08 Tibbetts Industries, Inc. Amplifier with reduced input capacitance
US6107893A (en) 1998-12-02 2000-08-22 Micron Technology, Inc. Voltage tunable active inductorless oscillator
US6353344B1 (en) 2000-05-22 2002-03-05 Microtronic Us, Inc. High impedance bias circuit

Also Published As

Publication number Publication date
EP1355416B1 (de) 2008-07-09
DK1355416T3 (da) 2008-10-06
DE60321986D1 (de) 2008-08-21
US20030199130A1 (en) 2003-10-23
EP1355416A1 (de) 2003-10-22
US7149317B2 (en) 2006-12-12

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Legal Events

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