ATE395737T1 - Vcsel oder led mit geneigtem resonator ohne wellenleitung - Google Patents

Vcsel oder led mit geneigtem resonator ohne wellenleitung

Info

Publication number
ATE395737T1
ATE395737T1 AT05728328T AT05728328T ATE395737T1 AT E395737 T1 ATE395737 T1 AT E395737T1 AT 05728328 T AT05728328 T AT 05728328T AT 05728328 T AT05728328 T AT 05728328T AT E395737 T1 ATE395737 T1 AT E395737T1
Authority
AT
Austria
Prior art keywords
cavity
tilted
vertical
modes
optical modes
Prior art date
Application number
AT05728328T
Other languages
English (en)
Inventor
Nikolai Ledentsov
Vitaly Shchukin
Original Assignee
Innolume Gmbh
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Innolume Gmbh filed Critical Innolume Gmbh
Application granted granted Critical
Publication of ATE395737T1 publication Critical patent/ATE395737T1/de

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/18—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities
    • H01S5/183—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL]
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y20/00—Nanooptics, e.g. quantum optics or photonic crystals
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/10—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a light reflecting structure, e.g. semiconductor Bragg reflector
    • H01L33/105—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a light reflecting structure, e.g. semiconductor Bragg reflector with a resonant cavity structure
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S2301/00—Functional characteristics
    • H01S2301/02—ASE (amplified spontaneous emission), noise; Reduction thereof
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H01S5/2004—Confining in the direction perpendicular to the layer structure
    • H01S5/2018—Optical confinement, e.g. absorbing-, reflecting- or waveguide-layers
    • H01S5/2027—Reflecting region or layer, parallel to the active layer, e.g. to modify propagation of the mode in the laser or to influence transverse modes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H01S5/205—Antiguided structures
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H01S5/34—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Nanotechnology (AREA)
  • Chemical & Material Sciences (AREA)
  • Optics & Photonics (AREA)
  • Power Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Biophysics (AREA)
  • Computer Hardware Design (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Manufacturing & Machinery (AREA)
  • Semiconductor Lasers (AREA)
AT05728328T 2004-04-07 2005-04-05 Vcsel oder led mit geneigtem resonator ohne wellenleitung ATE395737T1 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US56014904P 2004-04-07 2004-04-07

Publications (1)

Publication Number Publication Date
ATE395737T1 true ATE395737T1 (de) 2008-05-15

Family

ID=34962934

Family Applications (1)

Application Number Title Priority Date Filing Date
AT05728328T ATE395737T1 (de) 2004-04-07 2005-04-05 Vcsel oder led mit geneigtem resonator ohne wellenleitung

Country Status (7)

Country Link
US (1) US7339965B2 (de)
EP (1) EP1733461B1 (de)
JP (1) JP2007533126A (de)
AT (1) ATE395737T1 (de)
DE (1) DE602005006773D1 (de)
TW (1) TW200603401A (de)
WO (1) WO2005099056A1 (de)

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JP5217140B2 (ja) * 2006-09-29 2013-06-19 富士通株式会社 光半導体装置
JP4709259B2 (ja) 2007-10-12 2011-06-22 キヤノン株式会社 面発光レーザ
US7915629B2 (en) * 2008-12-08 2011-03-29 Cree, Inc. Composite high reflectivity layer
US9461201B2 (en) 2007-11-14 2016-10-04 Cree, Inc. Light emitting diode dielectric mirror
WO2010060998A2 (en) * 2008-11-28 2010-06-03 Pbc Lasers Gmbh Method for improvement of beam quality and wavelength stabilized operation of a semiconductor diode laser with an extended waveguide
US9362459B2 (en) 2009-09-02 2016-06-07 United States Department Of Energy High reflectivity mirrors and method for making same
US9435493B2 (en) 2009-10-27 2016-09-06 Cree, Inc. Hybrid reflector system for lighting device
US9012938B2 (en) 2010-04-09 2015-04-21 Cree, Inc. High reflective substrate of light emitting devices with improved light output
US9105824B2 (en) 2010-04-09 2015-08-11 Cree, Inc. High reflective board or substrate for LEDs
US10243121B2 (en) 2011-06-24 2019-03-26 Cree, Inc. High voltage monolithic LED chip with improved reliability
US9728676B2 (en) 2011-06-24 2017-08-08 Cree, Inc. High voltage monolithic LED chip
US9362428B2 (en) * 2012-11-27 2016-06-07 Artilux, Inc. Photonic lock based high bandwidth photodetector
US10388806B2 (en) 2012-12-10 2019-08-20 Artilux, Inc. Photonic lock based high bandwidth photodetector
US10916669B2 (en) 2012-12-10 2021-02-09 Artilux, Inc. Photonic lock based high bandwidth photodetector
US10658546B2 (en) 2015-01-21 2020-05-19 Cree, Inc. High efficiency LEDs and methods of manufacturing
US10644187B2 (en) 2015-07-24 2020-05-05 Artilux, Inc. Multi-wafer based light absorption apparatus and applications thereof
US10516251B2 (en) * 2016-06-28 2019-12-24 Vi Systems Gmbh Reliable high-speed oxide-confined vertical-cavity surface-emitting laser
GB2555100B (en) 2016-10-14 2020-07-08 Toshiba Res Europe Limited A photon source and a method of fabricating a photon source
TWI667503B (zh) * 2019-03-06 2019-08-01 國立中山大學 光波導結構及其製作方法
CN110176187B (zh) * 2019-06-19 2020-12-29 上海天马微电子有限公司 一种固态全反射显示器及其制作方法、显示装置

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Also Published As

Publication number Publication date
WO2005099056A1 (en) 2005-10-20
US7339965B2 (en) 2008-03-04
EP1733461B1 (de) 2008-05-14
EP1733461A1 (de) 2006-12-20
JP2007533126A (ja) 2007-11-15
US20050226294A1 (en) 2005-10-13
DE602005006773D1 (de) 2008-06-26
TW200603401A (en) 2006-01-16

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