ATE378693T1 - Verfahren zur abscheidung von hochqualitativen halbleiterschichten - Google Patents

Verfahren zur abscheidung von hochqualitativen halbleiterschichten

Info

Publication number
ATE378693T1
ATE378693T1 AT99948051T AT99948051T ATE378693T1 AT E378693 T1 ATE378693 T1 AT E378693T1 AT 99948051 T AT99948051 T AT 99948051T AT 99948051 T AT99948051 T AT 99948051T AT E378693 T1 ATE378693 T1 AT E378693T1
Authority
AT
Austria
Prior art keywords
layer
function
threshold
thickness
deposing
Prior art date
Application number
AT99948051T
Other languages
English (en)
Inventor
Subhendu Guha
Chi Yang
Original Assignee
United Solar Systems Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by United Solar Systems Corp filed Critical United Solar Systems Corp
Application granted granted Critical
Publication of ATE378693T1 publication Critical patent/ATE378693T1/de

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/50—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
    • C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/52—Controlling or regulating the coating process
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F71/00—Manufacture or treatment of devices covered by this subclass
    • H10F71/10—Manufacture or treatment of devices covered by this subclass the devices comprising amorphous semiconductor material
    • H10F71/103—Manufacture or treatment of devices covered by this subclass the devices comprising amorphous semiconductor material including only Group IV materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F71/00—Manufacture or treatment of devices covered by this subclass
    • H10F71/10—Manufacture or treatment of devices covered by this subclass the devices comprising amorphous semiconductor material
    • H10F71/103—Manufacture or treatment of devices covered by this subclass the devices comprising amorphous semiconductor material including only Group IV materials
    • H10F71/1035—Manufacture or treatment of devices covered by this subclass the devices comprising amorphous semiconductor material including only Group IV materials having multiple Group IV elements, e.g. SiGe or SiC
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/24—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials using chemical vapour deposition [CVD]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/29—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials characterised by the substrates
    • H10P14/2901—Materials
    • H10P14/2923—Materials being conductive materials, e.g. metallic silicides
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/34—Deposited materials, e.g. layers
    • H10P14/3402—Deposited materials, e.g. layers characterised by the chemical composition
    • H10P14/3404—Deposited materials, e.g. layers characterised by the chemical composition being Group IVA materials
    • H10P14/3411—Silicon, silicon germanium or germanium
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/34—Deposited materials, e.g. layers
    • H10P14/3438—Doping during depositing
    • H10P14/3441—Conductivity type
    • H10P14/3442—N-type
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/34—Deposited materials, e.g. layers
    • H10P14/3438—Doping during depositing
    • H10P14/3441—Conductivity type
    • H10P14/3444—P-type
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
    • Y02P70/50—Manufacturing or production processes characterised by the final manufactured product

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Metallurgy (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • General Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Inorganic Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • Plasma & Fusion (AREA)
  • Photovoltaic Devices (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
AT99948051T 1998-08-20 1999-08-20 Verfahren zur abscheidung von hochqualitativen halbleiterschichten ATE378693T1 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US9720898P 1998-08-20 1998-08-20
US09/377,652 US6274461B1 (en) 1998-08-20 1999-08-19 Method for depositing layers of high quality semiconductor material

Publications (1)

Publication Number Publication Date
ATE378693T1 true ATE378693T1 (de) 2007-11-15

Family

ID=26792912

Family Applications (1)

Application Number Title Priority Date Filing Date
AT99948051T ATE378693T1 (de) 1998-08-20 1999-08-20 Verfahren zur abscheidung von hochqualitativen halbleiterschichten

Country Status (7)

Country Link
US (1) US6274461B1 (de)
EP (1) EP1110248B1 (de)
AT (1) ATE378693T1 (de)
AU (1) AU751748B2 (de)
DE (1) DE69937567T2 (de)
ES (1) ES2300152T3 (de)
WO (1) WO2000011726A1 (de)

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7902049B2 (en) * 2004-01-27 2011-03-08 United Solar Ovonic Llc Method for depositing high-quality microcrystalline semiconductor materials
US20070256734A1 (en) * 2006-05-08 2007-11-08 United Solar Ovonic Llc Stabilized photovoltaic device and methods for its manufacture
EP1918966A1 (de) * 2006-11-02 2008-05-07 Dow Corning Corporation Verfahren zur Herstellung einer Schicht mit gradiertem Bandabstand durch Abscheidung eines amorphen Stoffes aus einem Plasma
MX2010000703A (es) 2007-07-19 2010-07-29 Medical Components Inc Ensamble de puerto de acceso venoso con indicaciones que se distinguen para rayos x.
JP5324966B2 (ja) * 2009-03-06 2013-10-23 三菱重工業株式会社 光電変換装置の製造方法及び製膜装置
WO2012027857A2 (en) 2010-09-02 2012-03-08 Oerlikon Solar Ag, Trübbach Method for manufacturing a tandem solar cell with microcrystalline absorber layer

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5637537A (en) * 1991-06-27 1997-06-10 United Solar Systems Corporation Method of severing a thin film semiconductor device
US5476798A (en) * 1992-06-29 1995-12-19 United Solar Systems Corporation Plasma deposition process with substrate temperature control
US5334423A (en) * 1993-01-28 1994-08-02 United Solar Systems Corp. Microwave energized process for the preparation of high quality semiconductor material
GB2301939B (en) * 1994-03-25 1998-10-21 Amoco Enron Solar Increasing Stabilized Performance of Amorphous Silicon Based Devices Produced by Highly Hydrogen Diluted Lower Temperature Plasma Deposition
US5730808A (en) * 1996-06-27 1998-03-24 Amoco/Enron Solar Producing solar cells by surface preparation for accelerated nucleation of microcrystalline silicon on heterogeneous substrates

Also Published As

Publication number Publication date
EP1110248A1 (de) 2001-06-27
ES2300152T3 (es) 2008-06-01
WO2000011726A1 (en) 2000-03-02
DE69937567T2 (de) 2008-09-25
EP1110248B1 (de) 2007-11-14
AU751748B2 (en) 2002-08-29
DE69937567D1 (de) 2007-12-27
US6274461B1 (en) 2001-08-14
EP1110248A4 (de) 2004-09-08
AU6130399A (en) 2000-03-14

Similar Documents

Publication Publication Date Title
WO2004113585A3 (en) Atomic layer deposition of barrier materials
WO2005076918A3 (en) Barrier layer process and arrangement
WO2006055459A3 (en) Tensile and compressive stressed materials for semiconductors
NO20013080D0 (no) Smuss-motstandig lag for glassoverflater
MX9602738A (es) Metodo para producir un recubrimiento, resistente a la eflorescencia, sobre un substrato de cemento.
TW200604368A (en) Controlled vapor deposition of multilayered coatings adhered by an oxide layer
TW200706690A (en) Process kit design to reduce particle generation
TW200619421A (en) Process chamber component with layered coating and method
TW200614415A (en) Method of improving to deposit dielectric
ATE507579T1 (de) Verfahren zur atomschichtabscheidung
WO2005029568A3 (en) INTERFACIAL OXIDATION PROCESS FOR HIGH-k GATE DIELECTRIC PROCESS INTEGRATION
ATE286153T1 (de) Vakuumbehandlungsanlage und verfahren zur herstellung von werkstücken
ATE378693T1 (de) Verfahren zur abscheidung von hochqualitativen halbleiterschichten
ATE218931T1 (de) Verfahren zur herstellung von uv-strahlen schützenden beschichtungen durch plasmaverstärkte dampfabscheidung
DE60230277D1 (de) Verfahren zur Metallisierung eines Kunststofftanks und verfahren zur Metallisierung einer Kunststoffpalette
DE60206012D1 (de) Verfahren zur Herstellung einer T-förmigen Elektrode
DE59906460D1 (de) Polykristalline diamantschicht mit (100)-textur
DE69929962D1 (de) Verfahren zur herstellung eines verzierten verputzes, mineralischer verputz und werkzeuge zur herstellung des verzierten verputzes
WO2002045147A3 (en) Method for pretreating dielectric layers to enhance the adhesion of cvd metal layers thereto
ATE529900T1 (de) Verfahren zum herstellen eines beschichteten leiters mit vereinfachter schichtarchitektur
WO2005072302A3 (en) Method for depositing high-quality microcrystalline semiconductor materials
WO2023111562A3 (en) Methods of depositing materials onto 2-dimensional layered materials
TW200504866A (en) Semiconductor etch speed modification
FR2827309B1 (fr) Procede de fabrication de materiaux composites diamantes
ATE411410T1 (de) Beschichtungsverfahren mit atomaren schichten (ald) zum erzeugen einer schicht hoher qualität

Legal Events

Date Code Title Description
RER Ceased as to paragraph 5 lit. 3 law introducing patent treaties