ATE368327T1 - Schaltung zur schnittstellenbildung zwischen einem symmetrischen hf-leistungsverstärker und einer unsymmetrischen last - Google Patents

Schaltung zur schnittstellenbildung zwischen einem symmetrischen hf-leistungsverstärker und einer unsymmetrischen last

Info

Publication number
ATE368327T1
ATE368327T1 AT00311417T AT00311417T ATE368327T1 AT E368327 T1 ATE368327 T1 AT E368327T1 AT 00311417 T AT00311417 T AT 00311417T AT 00311417 T AT00311417 T AT 00311417T AT E368327 T1 ATE368327 T1 AT E368327T1
Authority
AT
Austria
Prior art keywords
shunt
inductor
capacitor
series
resonate
Prior art date
Application number
AT00311417T
Other languages
English (en)
Inventor
Jesper Riishoej
Lerke Peter Dam
Original Assignee
Nokia Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nokia Corp filed Critical Nokia Corp
Application granted granted Critical
Publication of ATE368327T1 publication Critical patent/ATE368327T1/de

Links

Classifications

    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H7/00—Multiple-port networks comprising only passive electrical elements as network components
    • H03H7/42—Networks for transforming balanced signals into unbalanced signals and vice versa, e.g. baluns
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F1/00—Details of amplifiers with only discharge tubes, only semiconductor devices or only unspecified devices as amplifying elements
    • H03F1/56—Modifications of input or output impedances, not otherwise provided for
    • H03F1/565—Modifications of input or output impedances, not otherwise provided for using inductive elements
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
    • H03F3/189—High-frequency amplifiers, e.g. radio frequency amplifiers
    • H03F3/19—High-frequency amplifiers, e.g. radio frequency amplifiers with semiconductor devices only
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
    • H03F3/20—Power amplifiers, e.g. Class B amplifiers, Class C amplifiers
    • H03F3/24—Power amplifiers, e.g. Class B amplifiers, Class C amplifiers of transmitter output stages
    • H03F3/245—Power amplifiers, e.g. Class B amplifiers, Class C amplifiers of transmitter output stages with semiconductor devices only
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F2200/00—Indexing scheme relating to amplifiers
    • H03F2200/451—Indexing scheme relating to amplifiers the amplifier being a radio frequency amplifier

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Amplifiers (AREA)
AT00311417T 1999-12-21 2000-12-19 Schaltung zur schnittstellenbildung zwischen einem symmetrischen hf-leistungsverstärker und einer unsymmetrischen last ATE368327T1 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
GB9930244A GB2357635B (en) 1999-12-21 1999-12-21 A circuit for interfacing a balanced radio frequency power amplifier with an unbalanced load

Publications (1)

Publication Number Publication Date
ATE368327T1 true ATE368327T1 (de) 2007-08-15

Family

ID=10866777

Family Applications (1)

Application Number Title Priority Date Filing Date
AT00311417T ATE368327T1 (de) 1999-12-21 2000-12-19 Schaltung zur schnittstellenbildung zwischen einem symmetrischen hf-leistungsverstärker und einer unsymmetrischen last

Country Status (5)

Country Link
US (1) US6696902B2 (de)
EP (1) EP1111777B1 (de)
AT (1) ATE368327T1 (de)
DE (1) DE60035664T2 (de)
GB (1) GB2357635B (de)

Families Citing this family (19)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7805756B2 (en) * 1996-11-29 2010-09-28 Frampton E Ellis Microchips with inner firewalls, faraday cages, and/or photovoltaic cells
US7224240B2 (en) 2002-03-15 2007-05-29 Matsushita Electric Industrial Co., Ltd. Balanced high-frequency filter, antenna duplexer, balanced high-frequency circuit and communication apparatus
EP1505728A3 (de) * 2002-03-15 2011-12-07 Panasonic Corporation Symmetrisches Hochfrequenz-Bauelement, Schaltkreis und Verfahren zur Verbesserung der Signalsymmetrie
US8624678B2 (en) 2010-12-05 2014-01-07 Rf Micro Devices (Cayman Islands), Ltd. Output stage of a power amplifier having a switched-bulk biasing and adaptive biasing
JP2005303940A (ja) * 2004-04-16 2005-10-27 Matsushita Electric Ind Co Ltd アンテナスイッチ回路、ならびにそれを用いた複合高周波部品および移動体通信機器
KR20080003903A (ko) * 2005-04-20 2008-01-08 엔엑스피 비 브이 전원 시스템
US20080111607A1 (en) * 2006-11-10 2008-05-15 Hart Robert T Amplitude-linear differential phase shift circuit
US7773959B1 (en) 2007-04-25 2010-08-10 Rf Micro Devices, Inc. Quadrature radio frequency amplifier output network
DE102009032093B9 (de) * 2009-07-07 2017-03-02 Epcos Ag Diplexerschaltung mit Balun-Funktionalität
US8766724B2 (en) 2010-12-05 2014-07-01 Rf Micro Devices (Cayman Islands), Ltd. Apparatus and method for sensing and converting radio frequency to direct current
US8629725B2 (en) 2010-12-05 2014-01-14 Rf Micro Devices (Cayman Islands), Ltd. Power amplifier having a nonlinear output capacitance equalization
US8604873B2 (en) 2010-12-05 2013-12-10 Rf Micro Devices (Cayman Islands), Ltd. Ground partitioned power amplifier for stable operation
US8811531B2 (en) * 2011-03-23 2014-08-19 Triquint Semiconductor, Inc. Quadrature lattice matching network
US8843083B2 (en) 2012-07-09 2014-09-23 Rf Micro Devices (Cayman Islands), Ltd. CMOS switching circuitry of a transmitter module
US8731490B2 (en) 2012-07-27 2014-05-20 Rf Micro Devices (Cayman Islands), Ltd. Methods and circuits for detuning a filter and matching network at the output of a power amplifier
DE102013209450A1 (de) * 2013-05-22 2014-11-27 Siemens Aktiengesellschaft Symmetrierschaltung
US9985592B2 (en) * 2015-05-13 2018-05-29 Skyworks Solutions, Inc. High gain RF power amplifier with negative capacitor
US10411659B2 (en) 2018-01-25 2019-09-10 Cree, Inc. RF power amplifier with frequency selective impedance matching network
US11259413B2 (en) 2018-04-05 2022-02-22 Abb Power Electronics Inc. Inductively balanced power supply circuit and method of manufacture

Family Cites Families (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4928108A (en) * 1983-12-20 1990-05-22 Bsh Electronics, Ltd. Electrical signal separating device having isolating and matching circuitry for split passband matching
GB2237449B (en) * 1989-09-30 1994-03-30 Hi Trak Systems Ltd Transmitter and antenna
US5023576A (en) * 1989-12-04 1991-06-11 Motorola, Inc. Broadband 180 degree hybrid
US5148130A (en) * 1990-06-07 1992-09-15 Dietrich James L Wideband microstrip UHF balun
US5248975A (en) * 1991-06-26 1993-09-28 Geophysical Survey Systems, Inc. Ground probing radar with multiple antenna capability
JPH10200360A (ja) * 1997-01-07 1998-07-31 Tdk Corp 積層バルントランス
JP3547292B2 (ja) * 1997-06-17 2004-07-28 アルプス電気株式会社 テレビジョン信号受信チュ−ナ
US5969582A (en) * 1997-07-03 1999-10-19 Ericsson Inc. Impedance matching circuit for power amplifier
US6124742A (en) * 1998-01-26 2000-09-26 Motorola, Inc. Wide bandwidth frequency multiplier
US6466770B1 (en) * 1999-08-31 2002-10-15 Skyworks Solutions, Inc. BALUN circuit for combining differential power amplifier outputs

Also Published As

Publication number Publication date
EP1111777A3 (de) 2003-04-02
DE60035664T2 (de) 2007-11-22
US20010004224A1 (en) 2001-06-21
US6696902B2 (en) 2004-02-24
DE60035664D1 (de) 2007-09-06
EP1111777B1 (de) 2007-07-25
GB9930244D0 (en) 2000-02-09
EP1111777A2 (de) 2001-06-27
GB2357635A (en) 2001-06-27
GB2357635B (en) 2003-09-10

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