ATE327591T1 - Verfahren und system zur quantisierung eines analogen signals mit einem getakteten paar dioden mit resonantem tunneleffekt - Google Patents

Verfahren und system zur quantisierung eines analogen signals mit einem getakteten paar dioden mit resonantem tunneleffekt

Info

Publication number
ATE327591T1
ATE327591T1 AT00903108T AT00903108T ATE327591T1 AT E327591 T1 ATE327591 T1 AT E327591T1 AT 00903108 T AT00903108 T AT 00903108T AT 00903108 T AT00903108 T AT 00903108T AT E327591 T1 ATE327591 T1 AT E327591T1
Authority
AT
Austria
Prior art keywords
terminal
quantizing
clocked
diodes
analog signal
Prior art date
Application number
AT00903108T
Other languages
English (en)
Inventor
Tom P E Broekaert
Original Assignee
Raytheon Co
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Raytheon Co filed Critical Raytheon Co
Application granted granted Critical
Publication of ATE327591T1 publication Critical patent/ATE327591T1/de

Links

Classifications

    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03M—CODING; DECODING; CODE CONVERSION IN GENERAL
    • H03M1/00—Analogue/digital conversion; Digital/analogue conversion
    • H03M1/12—Analogue/digital converters
    • H03M1/34—Analogue value compared with reference values
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K3/00—Circuits for generating electric pulses; Monostable, bistable or multistable circuits
    • H03K3/02—Generators characterised by the type of circuit or by the means used for producing pulses
    • H03K3/313—Generators characterised by the type of circuit or by the means used for producing pulses by the use, as active elements, of semiconductor devices with two electrodes, one or two potential barriers, and exhibiting a negative resistance characteristic
    • H03K3/315—Generators characterised by the type of circuit or by the means used for producing pulses by the use, as active elements, of semiconductor devices with two electrodes, one or two potential barriers, and exhibiting a negative resistance characteristic the devices being tunnel diodes
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03M—CODING; DECODING; CODE CONVERSION IN GENERAL
    • H03M1/00—Analogue/digital conversion; Digital/analogue conversion
    • H03M1/06—Continuously compensating for, or preventing, undesired influence of physical parameters
    • H03M1/0617—Continuously compensating for, or preventing, undesired influence of physical parameters characterised by the use of methods or means not specific to a particular type of detrimental influence
    • H03M1/0675—Continuously compensating for, or preventing, undesired influence of physical parameters characterised by the use of methods or means not specific to a particular type of detrimental influence using redundancy
    • H03M1/0678—Continuously compensating for, or preventing, undesired influence of physical parameters characterised by the use of methods or means not specific to a particular type of detrimental influence using redundancy using additional components or elements, e.g. dummy components
    • H03M1/068—Continuously compensating for, or preventing, undesired influence of physical parameters characterised by the use of methods or means not specific to a particular type of detrimental influence using redundancy using additional components or elements, e.g. dummy components the original and additional components or elements being complementary to each other, e.g. CMOS
    • H03M1/0682—Continuously compensating for, or preventing, undesired influence of physical parameters characterised by the use of methods or means not specific to a particular type of detrimental influence using redundancy using additional components or elements, e.g. dummy components the original and additional components or elements being complementary to each other, e.g. CMOS using a differential network structure, i.e. symmetrical with respect to ground

Landscapes

  • Engineering & Computer Science (AREA)
  • Theoretical Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Nanotechnology (AREA)
  • Physics & Mathematics (AREA)
  • Mathematical Physics (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Amplifiers (AREA)
  • Analogue/Digital Conversion (AREA)
  • Radar Systems Or Details Thereof (AREA)
  • Analysing Materials By The Use Of Radiation (AREA)
  • Digital Transmission Methods That Use Modulated Carrier Waves (AREA)
AT00903108T 1999-01-06 2000-01-05 Verfahren und system zur quantisierung eines analogen signals mit einem getakteten paar dioden mit resonantem tunneleffekt ATE327591T1 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US11519899P 1999-01-06 1999-01-06

Publications (1)

Publication Number Publication Date
ATE327591T1 true ATE327591T1 (de) 2006-06-15

Family

ID=22359842

Family Applications (1)

Application Number Title Priority Date Filing Date
AT00903108T ATE327591T1 (de) 1999-01-06 2000-01-05 Verfahren und system zur quantisierung eines analogen signals mit einem getakteten paar dioden mit resonantem tunneleffekt

Country Status (7)

Country Link
US (1) US6348887B1 (de)
EP (1) EP1142124B1 (de)
JP (1) JP4422914B2 (de)
AT (1) ATE327591T1 (de)
AU (1) AU2490400A (de)
DE (1) DE60028181T2 (de)
WO (1) WO2000041309A1 (de)

Families Citing this family (36)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6724655B2 (en) 2000-06-22 2004-04-20 Progressant Technologies, Inc. Memory cell using negative differential resistance field effect transistors
US6594193B2 (en) 2000-06-22 2003-07-15 Progressent Technologies, Inc. Charge pump for negative differential resistance transistor
US6512274B1 (en) 2000-06-22 2003-01-28 Progressant Technologies, Inc. CMOS-process compatible, tunable NDR (negative differential resistance) device and method of operating same
US6518589B2 (en) 2000-06-22 2003-02-11 Progressant Technologies, Inc. Dual mode FET & logic circuit having negative differential resistance mode
US6596617B1 (en) 2000-06-22 2003-07-22 Progressant Technologies, Inc. CMOS compatible process for making a tunable negative differential resistance (NDR) device
US6479862B1 (en) 2000-06-22 2002-11-12 Progressant Technologies, Inc. Charge trapping device and method for implementing a transistor having a negative differential resistance mode
US6754104B2 (en) 2000-06-22 2004-06-22 Progressant Technologies, Inc. Insulated-gate field-effect transistor integrated with negative differential resistance (NDR) FET
US6559470B2 (en) 2000-06-22 2003-05-06 Progressed Technologies, Inc. Negative differential resistance field effect transistor (NDR-FET) and circuits using the same
US6509859B1 (en) * 2001-08-22 2003-01-21 Raytheon Company Method and system for quantizing an analog signal
US6490193B1 (en) 2001-08-22 2002-12-03 Raytheon Company Forming and storing data in a memory cell
US7453083B2 (en) 2001-12-21 2008-11-18 Synopsys, Inc. Negative differential resistance field effect transistor for implementing a pull up element in a memory cell
US6894327B1 (en) 2001-12-21 2005-05-17 Progressant Technologies, Inc. Negative differential resistance pull up element
US6864104B2 (en) 2002-06-28 2005-03-08 Progressant Technologies, Inc. Silicon on insulator (SOI) negative differential resistance (NDR) based memory device with reduced body effects
US6795337B2 (en) 2002-06-28 2004-09-21 Progressant Technologies, Inc. Negative differential resistance (NDR) elements and memory device using the same
US6847562B2 (en) 2002-06-28 2005-01-25 Progressant Technologies, Inc. Enhanced read and write methods for negative differential resistance (NDR) based memory device
US7098472B2 (en) 2002-06-28 2006-08-29 Progressant Technologies, Inc. Negative differential resistance (NDR) elements and memory device using the same
US6567292B1 (en) 2002-06-28 2003-05-20 Progressant Technologies, Inc. Negative differential resistance (NDR) element and memory with reduced soft error rate
US6912151B2 (en) 2002-06-28 2005-06-28 Synopsys, Inc. Negative differential resistance (NDR) based memory device with reduced body effects
US6853035B1 (en) 2002-06-28 2005-02-08 Synopsys, Inc. Negative differential resistance (NDR) memory device with reduced soft error rate
US7095659B2 (en) 2002-06-28 2006-08-22 Progressant Technologies, Inc. Variable voltage supply bias and methods for negative differential resistance (NDR) based memory device
US6812084B2 (en) 2002-12-09 2004-11-02 Progressant Technologies, Inc. Adaptive negative differential resistance device
US6980467B2 (en) 2002-12-09 2005-12-27 Progressant Technologies, Inc. Method of forming a negative differential resistance device
US7012833B2 (en) 2002-12-09 2006-03-14 Progressant Technologies, Inc. Integrated circuit having negative differential resistance (NDR) devices with varied peak-to-valley ratios (PVRs)
US6979580B2 (en) 2002-12-09 2005-12-27 Progressant Technologies, Inc. Process for controlling performance characteristics of a negative differential resistance (NDR) device
US6806117B2 (en) 2002-12-09 2004-10-19 Progressant Technologies, Inc. Methods of testing/stressing a charge trapping device
US6849483B2 (en) 2002-12-09 2005-02-01 Progressant Technologies, Inc. Charge trapping device and method of forming the same
US7005711B2 (en) 2002-12-20 2006-02-28 Progressant Technologies, Inc. N-channel pull-up element and logic circuit
US7098438B1 (en) 2003-11-19 2006-08-29 Raytheon Company Method and apparatus for resetting a high speed latch circuit
US6906650B2 (en) * 2003-11-19 2005-06-14 Raytheon Company Method and apparatus for generating a pulse of very narrow width
US7038623B2 (en) * 2003-12-04 2006-05-02 Raytheon Company Method and apparatus for detecting radiation at one wavelength using a detector for a different wavelength
US7012475B2 (en) * 2003-12-30 2006-03-14 Raytheon Company Method and apparatus for effecting high-frequency amplification or oscillation
US7038526B1 (en) 2004-01-21 2006-05-02 Raytheon Company Method and apparatus facilitating operation of a resonant tunneling device at a high frequency
US6864816B1 (en) 2004-01-21 2005-03-08 Raytheon Company Method and apparatus for high-speed quantization using resonant tunneling technology
US6972702B1 (en) 2004-06-15 2005-12-06 Hrl Laboratories, Llc 1-Of-N A/D converter
JP5450064B2 (ja) * 2006-07-18 2014-03-26 レイセオン カンパニー 光ディジタル・アナログ変換器
US9752929B2 (en) * 2014-05-08 2017-09-05 Pinnacle Imaging Corporation Light-detecting device and method for converting optical radiation on switched conductivity diodes

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US3569733A (en) 1967-12-28 1971-03-09 Gen Electric Reversible counter circuit utilizing tunnel diodes
CH484562A (de) 1968-06-20 1970-01-15 Ibm Analog-Digital-Wandler
US3815124A (en) 1973-01-16 1974-06-04 Westinghouse Electric Corp Analog to digital converter
US3889134A (en) * 1974-05-16 1975-06-10 Trw Inc Tunnel diode digital data sample, decision and hold circuit
DE2755228A1 (de) 1977-12-10 1979-06-13 Wandel & Goltermann Schaltungsanordnung zur traegereinspeisung fuer modulatoren
SU1370758A1 (ru) 1986-08-28 1988-01-30 Институт Проблем Управления (Автоматики И Телемеханики) Компаратор тока
JP2808740B2 (ja) 1989-10-31 1998-10-08 横河電機株式会社 サンプリングヘッド
US5272480A (en) 1992-08-17 1993-12-21 Hewlett-Packard Company Track and hold circuit with continuously suppressed Josephson effect
EP0596691A3 (en) 1992-11-04 1994-07-27 Texas Instruments Inc Multi-function resonant tunneling logic gate and method of performing binary and multi-valued logic
US5444751A (en) * 1993-09-24 1995-08-22 Massachusetts Institute Of Technology Tunnel diode shift register utilizing tunnel diode coupling
US5698997A (en) 1995-09-28 1997-12-16 Mayo Foundation For Medical Education And Research Resonant tunneling diode structures for functionally complete low power logic
JPH10285037A (ja) 1997-04-10 1998-10-23 Mitsubishi Electric Corp アナログ−デジタル変換回路
US6037819A (en) 1997-08-01 2000-03-14 Texas Instruments Incorporated High frequency clock signal generator
US5930323A (en) * 1997-08-26 1999-07-27 Texas Instruments Incorporation Ultra fast shift register using resonant tunnel diodes

Also Published As

Publication number Publication date
WO2000041309A1 (en) 2000-07-13
DE60028181T2 (de) 2007-04-12
JP2002534889A (ja) 2002-10-15
EP1142124B1 (de) 2006-05-24
US6348887B1 (en) 2002-02-19
AU2490400A (en) 2000-07-24
JP4422914B2 (ja) 2010-03-03
DE60028181D1 (de) 2006-06-29
EP1142124A1 (de) 2001-10-10

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