ATE327591T1 - Verfahren und system zur quantisierung eines analogen signals mit einem getakteten paar dioden mit resonantem tunneleffekt - Google Patents
Verfahren und system zur quantisierung eines analogen signals mit einem getakteten paar dioden mit resonantem tunneleffektInfo
- Publication number
- ATE327591T1 ATE327591T1 AT00903108T AT00903108T ATE327591T1 AT E327591 T1 ATE327591 T1 AT E327591T1 AT 00903108 T AT00903108 T AT 00903108T AT 00903108 T AT00903108 T AT 00903108T AT E327591 T1 ATE327591 T1 AT E327591T1
- Authority
- AT
- Austria
- Prior art keywords
- terminal
- quantizing
- clocked
- diodes
- analog signal
- Prior art date
Links
Classifications
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03M—CODING; DECODING; CODE CONVERSION IN GENERAL
- H03M1/00—Analogue/digital conversion; Digital/analogue conversion
- H03M1/12—Analogue/digital converters
- H03M1/34—Analogue value compared with reference values
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K3/00—Circuits for generating electric pulses; Monostable, bistable or multistable circuits
- H03K3/02—Generators characterised by the type of circuit or by the means used for producing pulses
- H03K3/313—Generators characterised by the type of circuit or by the means used for producing pulses by the use, as active elements, of semiconductor devices with two electrodes, one or two potential barriers, and exhibiting a negative resistance characteristic
- H03K3/315—Generators characterised by the type of circuit or by the means used for producing pulses by the use, as active elements, of semiconductor devices with two electrodes, one or two potential barriers, and exhibiting a negative resistance characteristic the devices being tunnel diodes
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03M—CODING; DECODING; CODE CONVERSION IN GENERAL
- H03M1/00—Analogue/digital conversion; Digital/analogue conversion
- H03M1/06—Continuously compensating for, or preventing, undesired influence of physical parameters
- H03M1/0617—Continuously compensating for, or preventing, undesired influence of physical parameters characterised by the use of methods or means not specific to a particular type of detrimental influence
- H03M1/0675—Continuously compensating for, or preventing, undesired influence of physical parameters characterised by the use of methods or means not specific to a particular type of detrimental influence using redundancy
- H03M1/0678—Continuously compensating for, or preventing, undesired influence of physical parameters characterised by the use of methods or means not specific to a particular type of detrimental influence using redundancy using additional components or elements, e.g. dummy components
- H03M1/068—Continuously compensating for, or preventing, undesired influence of physical parameters characterised by the use of methods or means not specific to a particular type of detrimental influence using redundancy using additional components or elements, e.g. dummy components the original and additional components or elements being complementary to each other, e.g. CMOS
- H03M1/0682—Continuously compensating for, or preventing, undesired influence of physical parameters characterised by the use of methods or means not specific to a particular type of detrimental influence using redundancy using additional components or elements, e.g. dummy components the original and additional components or elements being complementary to each other, e.g. CMOS using a differential network structure, i.e. symmetrical with respect to ground
Landscapes
- Engineering & Computer Science (AREA)
- Theoretical Computer Science (AREA)
- Chemical & Material Sciences (AREA)
- Nanotechnology (AREA)
- Physics & Mathematics (AREA)
- Mathematical Physics (AREA)
- Crystallography & Structural Chemistry (AREA)
- Amplifiers (AREA)
- Radar Systems Or Details Thereof (AREA)
- Analogue/Digital Conversion (AREA)
- Digital Transmission Methods That Use Modulated Carrier Waves (AREA)
- Analysing Materials By The Use Of Radiation (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US11519899P | 1999-01-06 | 1999-01-06 |
Publications (1)
Publication Number | Publication Date |
---|---|
ATE327591T1 true ATE327591T1 (de) | 2006-06-15 |
Family
ID=22359842
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
AT00903108T ATE327591T1 (de) | 1999-01-06 | 2000-01-05 | Verfahren und system zur quantisierung eines analogen signals mit einem getakteten paar dioden mit resonantem tunneleffekt |
Country Status (7)
Country | Link |
---|---|
US (1) | US6348887B1 (de) |
EP (1) | EP1142124B1 (de) |
JP (1) | JP4422914B2 (de) |
AT (1) | ATE327591T1 (de) |
AU (1) | AU2490400A (de) |
DE (1) | DE60028181T2 (de) |
WO (1) | WO2000041309A1 (de) |
Families Citing this family (24)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6518589B2 (en) | 2000-06-22 | 2003-02-11 | Progressant Technologies, Inc. | Dual mode FET & logic circuit having negative differential resistance mode |
US6596617B1 (en) | 2000-06-22 | 2003-07-22 | Progressant Technologies, Inc. | CMOS compatible process for making a tunable negative differential resistance (NDR) device |
US6754104B2 (en) | 2000-06-22 | 2004-06-22 | Progressant Technologies, Inc. | Insulated-gate field-effect transistor integrated with negative differential resistance (NDR) FET |
US6512274B1 (en) | 2000-06-22 | 2003-01-28 | Progressant Technologies, Inc. | CMOS-process compatible, tunable NDR (negative differential resistance) device and method of operating same |
US6594193B2 (en) | 2000-06-22 | 2003-07-15 | Progressent Technologies, Inc. | Charge pump for negative differential resistance transistor |
US6724655B2 (en) | 2000-06-22 | 2004-04-20 | Progressant Technologies, Inc. | Memory cell using negative differential resistance field effect transistors |
US6559470B2 (en) | 2000-06-22 | 2003-05-06 | Progressed Technologies, Inc. | Negative differential resistance field effect transistor (NDR-FET) and circuits using the same |
US6479862B1 (en) | 2000-06-22 | 2002-11-12 | Progressant Technologies, Inc. | Charge trapping device and method for implementing a transistor having a negative differential resistance mode |
US6490193B1 (en) | 2001-08-22 | 2002-12-03 | Raytheon Company | Forming and storing data in a memory cell |
US6509859B1 (en) * | 2001-08-22 | 2003-01-21 | Raytheon Company | Method and system for quantizing an analog signal |
US6795337B2 (en) | 2002-06-28 | 2004-09-21 | Progressant Technologies, Inc. | Negative differential resistance (NDR) elements and memory device using the same |
US6567292B1 (en) | 2002-06-28 | 2003-05-20 | Progressant Technologies, Inc. | Negative differential resistance (NDR) element and memory with reduced soft error rate |
US6812084B2 (en) | 2002-12-09 | 2004-11-02 | Progressant Technologies, Inc. | Adaptive negative differential resistance device |
US6806117B2 (en) | 2002-12-09 | 2004-10-19 | Progressant Technologies, Inc. | Methods of testing/stressing a charge trapping device |
US7005711B2 (en) | 2002-12-20 | 2006-02-28 | Progressant Technologies, Inc. | N-channel pull-up element and logic circuit |
US6906650B2 (en) * | 2003-11-19 | 2005-06-14 | Raytheon Company | Method and apparatus for generating a pulse of very narrow width |
US7098438B1 (en) | 2003-11-19 | 2006-08-29 | Raytheon Company | Method and apparatus for resetting a high speed latch circuit |
US7038623B2 (en) * | 2003-12-04 | 2006-05-02 | Raytheon Company | Method and apparatus for detecting radiation at one wavelength using a detector for a different wavelength |
US7012475B2 (en) * | 2003-12-30 | 2006-03-14 | Raytheon Company | Method and apparatus for effecting high-frequency amplification or oscillation |
US7038526B1 (en) | 2004-01-21 | 2006-05-02 | Raytheon Company | Method and apparatus facilitating operation of a resonant tunneling device at a high frequency |
US6864816B1 (en) | 2004-01-21 | 2005-03-08 | Raytheon Company | Method and apparatus for high-speed quantization using resonant tunneling technology |
US6972702B1 (en) | 2004-06-15 | 2005-12-06 | Hrl Laboratories, Llc | 1-Of-N A/D converter |
WO2008011445A1 (en) * | 2006-07-18 | 2008-01-24 | Raytheon Company | Optical digital to analog converter |
US9752929B2 (en) * | 2014-05-08 | 2017-09-05 | Pinnacle Imaging Corporation | Light-detecting device and method for converting optical radiation on switched conductivity diodes |
Family Cites Families (14)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3569733A (en) | 1967-12-28 | 1971-03-09 | Gen Electric | Reversible counter circuit utilizing tunnel diodes |
CH484562A (de) | 1968-06-20 | 1970-01-15 | Ibm | Analog-Digital-Wandler |
US3815124A (en) | 1973-01-16 | 1974-06-04 | Westinghouse Electric Corp | Analog to digital converter |
US3889134A (en) * | 1974-05-16 | 1975-06-10 | Trw Inc | Tunnel diode digital data sample, decision and hold circuit |
DE2755228A1 (de) | 1977-12-10 | 1979-06-13 | Wandel & Goltermann | Schaltungsanordnung zur traegereinspeisung fuer modulatoren |
SU1370758A1 (ru) | 1986-08-28 | 1988-01-30 | Институт Проблем Управления (Автоматики И Телемеханики) | Компаратор тока |
JP2808740B2 (ja) | 1989-10-31 | 1998-10-08 | 横河電機株式会社 | サンプリングヘッド |
US5272480A (en) | 1992-08-17 | 1993-12-21 | Hewlett-Packard Company | Track and hold circuit with continuously suppressed Josephson effect |
JP3429821B2 (ja) | 1992-11-04 | 2003-07-28 | テキサス インスツルメンツ インコーポレイテツド | 多機能共鳴トンネリング論理ゲート |
US5444751A (en) * | 1993-09-24 | 1995-08-22 | Massachusetts Institute Of Technology | Tunnel diode shift register utilizing tunnel diode coupling |
US5698997A (en) | 1995-09-28 | 1997-12-16 | Mayo Foundation For Medical Education And Research | Resonant tunneling diode structures for functionally complete low power logic |
JPH10285037A (ja) | 1997-04-10 | 1998-10-23 | Mitsubishi Electric Corp | アナログ−デジタル変換回路 |
US6037819A (en) | 1997-08-01 | 2000-03-14 | Texas Instruments Incorporated | High frequency clock signal generator |
US5930323A (en) * | 1997-08-26 | 1999-07-27 | Texas Instruments Incorporation | Ultra fast shift register using resonant tunnel diodes |
-
2000
- 2000-01-05 US US09/478,032 patent/US6348887B1/en not_active Expired - Lifetime
- 2000-01-05 EP EP00903108A patent/EP1142124B1/de not_active Expired - Lifetime
- 2000-01-05 JP JP2000592944A patent/JP4422914B2/ja not_active Expired - Fee Related
- 2000-01-05 AU AU24904/00A patent/AU2490400A/en not_active Abandoned
- 2000-01-05 DE DE60028181T patent/DE60028181T2/de not_active Expired - Lifetime
- 2000-01-05 WO PCT/US2000/000171 patent/WO2000041309A1/en active IP Right Grant
- 2000-01-05 AT AT00903108T patent/ATE327591T1/de not_active IP Right Cessation
Also Published As
Publication number | Publication date |
---|---|
EP1142124B1 (de) | 2006-05-24 |
DE60028181T2 (de) | 2007-04-12 |
AU2490400A (en) | 2000-07-24 |
EP1142124A1 (de) | 2001-10-10 |
JP2002534889A (ja) | 2002-10-15 |
US6348887B1 (en) | 2002-02-19 |
JP4422914B2 (ja) | 2010-03-03 |
DE60028181D1 (de) | 2006-06-29 |
WO2000041309A1 (en) | 2000-07-13 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
RER | Ceased as to paragraph 5 lit. 3 law introducing patent treaties |