ATE300795T1 - Verbesserungen für laser - Google Patents

Verbesserungen für laser

Info

Publication number
ATE300795T1
ATE300795T1 AT02715551T AT02715551T ATE300795T1 AT E300795 T1 ATE300795 T1 AT E300795T1 AT 02715551 T AT02715551 T AT 02715551T AT 02715551 T AT02715551 T AT 02715551T AT E300795 T1 ATE300795 T1 AT E300795T1
Authority
AT
Austria
Prior art keywords
region
output
laser
lasing
laser device
Prior art date
Application number
AT02715551T
Other languages
English (en)
Inventor
John Haig Marsh
Craig James Hamilton
Original Assignee
Univ Glasgow
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Univ Glasgow filed Critical Univ Glasgow
Application granted granted Critical
Publication of ATE300795T1 publication Critical patent/ATE300795T1/de

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/026—Monolithically integrated components, e.g. waveguides, monitoring photo-detectors, drivers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/1028—Coupling to elements in the cavity, e.g. coupling to waveguides adjacent the active region, e.g. forward coupled [DFC] structures
    • H01S5/1032—Coupling to elements comprising an optical axis that is not aligned with the optical axis of the active region

Landscapes

  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Optics & Photonics (AREA)
  • Semiconductor Lasers (AREA)
  • Glass Compositions (AREA)
  • Lasers (AREA)
  • Laser Surgery Devices (AREA)
AT02715551T 2001-01-23 2002-01-23 Verbesserungen für laser ATE300795T1 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
GB0101689A GB2371407B (en) 2001-01-23 2001-01-23 Improvements in or relating to lasers
PCT/GB2002/000273 WO2002060021A2 (en) 2001-01-23 2002-01-23 Improvements in or relating to lasers

Publications (1)

Publication Number Publication Date
ATE300795T1 true ATE300795T1 (de) 2005-08-15

Family

ID=9907316

Family Applications (1)

Application Number Title Priority Date Filing Date
AT02715551T ATE300795T1 (de) 2001-01-23 2002-01-23 Verbesserungen für laser

Country Status (6)

Country Link
US (1) US6717970B2 (de)
EP (1) EP1366547B1 (de)
AT (1) ATE300795T1 (de)
DE (1) DE60205228T2 (de)
GB (1) GB2371407B (de)
WO (1) WO2002060021A2 (de)

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* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE10046580A1 (de) * 2000-09-20 2002-04-04 Osram Opto Semiconductors Gmbh Halbleiter-Laser
GB0201950D0 (en) * 2002-01-29 2002-03-13 Qinetiq Ltd Multimode interference optical waveguide device
JP3968564B2 (ja) * 2002-03-14 2007-08-29 日本電気株式会社 ファイバー型光増幅器、光中継器、および光伝送システム
US6775312B2 (en) * 2002-05-15 2004-08-10 Quantum Devices, Inc. Photonic integrated circuit
US20050053109A1 (en) * 2002-06-03 2005-03-10 Josh Hogan Integrated multiple wavelength system
DE10361879A1 (de) * 2003-12-19 2005-03-10 Infineon Technologies Ag Optisches Bauelement mit einem MMI-Koppler
US7286731B2 (en) * 2004-04-29 2007-10-23 Lucent Technologies Inc. Monolithically integrated optical coupler with substantially no splitting loss
DE102004038283B4 (de) * 2004-08-03 2008-04-03 Forschungsverbund Berlin E.V. Optoelektronisches Element und Verfahren zur kohärenten Kopplung von aktiven Bereichen optoelektronischer Elemente
IL166810A0 (en) * 2005-02-10 2006-01-15 Univ Ramot All-optical devices and methods for data processing
US7366210B2 (en) * 2005-11-18 2008-04-29 Jds Uniphase Corporation Single spatial mode output multi-mode interference laser diode with external cavity
KR100800664B1 (ko) * 2006-04-04 2008-02-01 삼성전자주식회사 레이저 광 모듈
SE0950938A1 (sv) * 2009-12-04 2011-06-05 Ekklippan Ab Optisk kopplare
JP2011243939A (ja) * 2010-01-20 2011-12-01 Panasonic Corp 窒化物半導体レーザ装置
CN104184045B (zh) * 2014-08-22 2017-04-05 华中科技大学 一种定波长单纵模工作的脊波导分布反馈半导体激光器
US11811198B2 (en) * 2019-07-22 2023-11-07 Ii-Vi Delaware, Inc. High power laser array devices and methods
US20220263288A1 (en) * 2019-08-26 2022-08-18 Panasonic Corporation Semiconductor laser device
CN112825415A (zh) * 2019-11-21 2021-05-21 深圳市中光工业技术研究院 激光器芯片制备方法和激光器
US11302352B2 (en) 2020-06-22 2022-04-12 Western Digital Technologies, Inc. VCSEL array for HAMR
US11657845B1 (en) 2022-03-30 2023-05-23 Western Digital Technologies, Inc. Beam combiner for VCSEL array in HAMR head
CN114784627A (zh) * 2022-04-11 2022-07-22 中国科学院长春光学精密机械与物理研究所 基于多模干涉波导的高相干性激光面阵及其制备方法

Family Cites Families (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS54115088A (en) 1978-02-28 1979-09-07 Nec Corp Double hetero junction laser element of stripe type
US4511408A (en) 1982-04-22 1985-04-16 The Board Of Trustees Of The University Of Illinois Semiconductor device fabrication with disordering elements introduced into active region
US4594603A (en) 1982-04-22 1986-06-10 Board Of Trustees Of The University Of Illinois Semiconductor device with disordered active region
US4639275A (en) 1982-04-22 1987-01-27 The Board Of Trustees Of The University Of Illinois Forming disordered layer by controlled diffusion in heterojunction III-V semiconductor
US4585491A (en) 1983-09-02 1986-04-29 Xerox Corporation Wavelength tuning of quantum well lasers by thermal annealing
US4684653A (en) 1985-03-08 1987-08-04 The Trustees Of Princeton University Pyrido(2,3-d)pyrimidine derivatives
US4727556A (en) 1985-12-30 1988-02-23 Xerox Corporation Semiconductor lasers fabricated from impurity induced disordering
US4871690A (en) 1986-01-21 1989-10-03 Xerox Corporation Semiconductor structures utilizing semiconductor support means selectively pretreated with migratory defects
GB2198603A (en) 1986-12-05 1988-06-15 Philips Electronic Associated Divider circuit
US4857971A (en) 1987-03-23 1989-08-15 Xerox Corporation (IV)x (III-V)1-x alloys formed in situ in III-V heterostructures
US5384797A (en) 1992-09-21 1995-01-24 Sdl, Inc. Monolithic multi-wavelength laser diode array
JP3725582B2 (ja) 1995-07-05 2005-12-14 三菱電機株式会社 半導体レーザ装置の製造方法，及び半導体レーザ装置
US5873818A (en) * 1997-01-28 1999-02-23 Rothfels; Nancy Lois Laryngoscope with enhanced viewing capability
JP3329764B2 (ja) 1999-05-13 2002-09-30 日本電気株式会社 半導体レーザー及び半導体光増幅器

Also Published As

Publication number Publication date
US20020097765A1 (en) 2002-07-25
DE60205228D1 (de) 2005-09-01
GB0101689D0 (en) 2001-03-07
EP1366547A2 (de) 2003-12-03
WO2002060021A2 (en) 2002-08-01
GB2371407A (en) 2002-07-24
WO2002060021A3 (en) 2003-09-25
DE60205228T2 (de) 2006-05-24
GB2371407B (en) 2003-07-09
EP1366547B1 (de) 2005-07-27
US6717970B2 (en) 2004-04-06

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Legal Events

Date Code Title Description
RER Ceased as to paragraph 5 lit. 3 law introducing patent treaties