ATE299957T1 - Verfahren und vorrichtung zur behandlung eines werkstoffes mit elektromagnetischer strahlung in einer kontrollierten atmosphäre - Google Patents

Verfahren und vorrichtung zur behandlung eines werkstoffes mit elektromagnetischer strahlung in einer kontrollierten atmosphäre

Info

Publication number
ATE299957T1
ATE299957T1 AT00410038T AT00410038T ATE299957T1 AT E299957 T1 ATE299957 T1 AT E299957T1 AT 00410038 T AT00410038 T AT 00410038T AT 00410038 T AT00410038 T AT 00410038T AT E299957 T1 ATE299957 T1 AT E299957T1
Authority
AT
Austria
Prior art keywords
radiation
controlled atmosphere
treatment
treating
deposit
Prior art date
Application number
AT00410038T
Other languages
English (en)
Inventor
Papet Emmanuelle Touchais
Rene-Pierre Ducret
Original Assignee
Joint Industrial Processors For Electronics
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Joint Industrial Processors For Electronics filed Critical Joint Industrial Processors For Electronics
Application granted granted Critical
Publication of ATE299957T1 publication Critical patent/ATE299957T1/de

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/26—Bombardment with radiation
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/48—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating by irradiation, e.g. photolysis, radiolysis, particle radiation
    • C23C16/482—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating by irradiation, e.g. photolysis, radiolysis, particle radiation using incoherent light, UV to IR, e.g. lamps
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/48—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating by irradiation, e.g. photolysis, radiolysis, particle radiation
    • C23C16/481—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating by irradiation, e.g. photolysis, radiolysis, particle radiation by radiant heating of the substrate
AT00410038T 1999-04-26 2000-04-14 Verfahren und vorrichtung zur behandlung eines werkstoffes mit elektromagnetischer strahlung in einer kontrollierten atmosphäre ATE299957T1 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
FR9905413A FR2792774B1 (fr) 1999-04-26 1999-04-26 Procede et dispositif de traitement d'un materiau par rayonnement electromagnetique et sous atmosphere controlee

Publications (1)

Publication Number Publication Date
ATE299957T1 true ATE299957T1 (de) 2005-08-15

Family

ID=9544997

Family Applications (1)

Application Number Title Priority Date Filing Date
AT00410038T ATE299957T1 (de) 1999-04-26 2000-04-14 Verfahren und vorrichtung zur behandlung eines werkstoffes mit elektromagnetischer strahlung in einer kontrollierten atmosphäre

Country Status (7)

Country Link
US (1) US6259066B1 (de)
EP (1) EP1048747B1 (de)
JP (1) JP2001023916A (de)
KR (1) KR100607895B1 (de)
AT (1) ATE299957T1 (de)
DE (1) DE60021302T2 (de)
FR (1) FR2792774B1 (de)

Families Citing this family (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100267155B1 (ko) * 1996-09-13 2000-10-16 아끼구사 나오유끼 반도체 장치의 제조 방법 및 제조 장치
DE10060987B4 (de) * 2000-09-22 2006-08-03 Schott Ag Verfahren und Vorrichtung zum Keramisieren des Ausgangsglases einer Glaskeramik sowie Verwendungen von Verfahren und Vorrichtung
US8536492B2 (en) * 2003-10-27 2013-09-17 Applied Materials, Inc. Processing multilayer semiconductors with multiple heat sources
US20080090309A1 (en) * 2003-10-27 2008-04-17 Ranish Joseph M Controlled annealing method
US20060032846A1 (en) * 2004-07-27 2006-02-16 Dieter Haas Infrared heating element and a substrate type vacuum chamber, particularly for vacuum coating facilities
US20140003800A1 (en) * 2004-09-24 2014-01-02 Applied Materials, Inc. Processing multilayer semiconductors with multiple heat sources
KR101233059B1 (ko) * 2005-06-22 2013-02-13 액셀리스 테크놀로지스, 인크. 유전 물질을 처리하는 장치 및 프로세스
US7547633B2 (en) * 2006-05-01 2009-06-16 Applied Materials, Inc. UV assisted thermal processing
US7822324B2 (en) 2006-08-14 2010-10-26 Applied Materials, Inc. Load lock chamber with heater in tube
TWM413957U (en) * 2010-10-27 2011-10-11 Tangteck Equipment Inc Diffusion furnace apparatus
KR101224059B1 (ko) * 2012-02-28 2013-01-21 (주)앤피에스 기판 처리 장치 및 그 처리 방법
TWI494174B (zh) * 2012-05-16 2015-08-01 Kern Energy Entpr Co Ltd 基板表面處理設備
US20170194162A1 (en) * 2016-01-05 2017-07-06 Taiwan Semiconductor Manufacturing Co., Ltd. Semiconductor manufacturing equipment and method for treating wafer
DE102020208184A1 (de) 2020-06-30 2021-12-30 Singulus Technologies Aktiengesellschaft Heizsystem und Verfahren zum Aufheizen von großflächigen Substraten

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS58158914A (ja) * 1982-03-16 1983-09-21 Semiconductor Res Found 半導体製造装置
CH670171A5 (de) 1986-07-22 1989-05-12 Bbc Brown Boveri & Cie
US5441569A (en) * 1993-11-29 1995-08-15 The United States Of America As Represented By The United States Department Of Energy Apparatus and method for laser deposition of durable coatings
US5863327A (en) * 1997-02-10 1999-01-26 Micron Technology, Inc. Apparatus for forming materials

Also Published As

Publication number Publication date
FR2792774A1 (fr) 2000-10-27
DE60021302T2 (de) 2006-05-24
US6259066B1 (en) 2001-07-10
EP1048747B1 (de) 2005-07-20
FR2792774B1 (fr) 2003-08-01
JP2001023916A (ja) 2001-01-26
DE60021302D1 (de) 2005-08-25
KR20010014814A (ko) 2001-02-26
EP1048747A1 (de) 2000-11-02
KR100607895B1 (ko) 2006-08-03

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