ATE296T1 - Cvd-beschichtungsvorrichtung fuer kleinteile und ihre verwendung zur beschichtung von spannelementen von dentalturbinen. - Google Patents
Cvd-beschichtungsvorrichtung fuer kleinteile und ihre verwendung zur beschichtung von spannelementen von dentalturbinen.Info
- Publication number
- ATE296T1 ATE296T1 AT79104012T AT79104012T ATE296T1 AT E296 T1 ATE296 T1 AT E296T1 AT 79104012 T AT79104012 T AT 79104012T AT 79104012 T AT79104012 T AT 79104012T AT E296 T1 ATE296 T1 AT E296T1
- Authority
- AT
- Austria
- Prior art keywords
- small parts
- coating
- clamping elements
- cvd
- frame
- Prior art date
Links
- 239000011248 coating agent Substances 0.000 title abstract 4
- 238000000576 coating method Methods 0.000 title abstract 4
- 208000037998 chronic venous disease Diseases 0.000 abstract 2
- 239000000463 material Substances 0.000 abstract 2
- 238000005229 chemical vapour deposition Methods 0.000 abstract 1
- 238000001816 cooling Methods 0.000 abstract 1
- 238000000151 deposition Methods 0.000 abstract 1
- 230000008021 deposition Effects 0.000 abstract 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
- C23C16/45563—Gas nozzles
- C23C16/45565—Shower nozzles
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
Landscapes
- Chemical & Material Sciences (AREA)
- General Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Engineering & Computer Science (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Chemical Vapour Deposition (AREA)
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| DE2849240A DE2849240C2 (de) | 1978-11-13 | 1978-11-13 | CVD-Beschichtungsvorrichtung für Kleinteile und ihre Verwendung |
| EP79104012A EP0011148B1 (de) | 1978-11-13 | 1979-10-17 | CVD-Beschichtungsvorrichtung für Kleinteile und ihre Verwendung zur Beschichtung von Spannelementen von Dentalturbinen |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| ATE296T1 true ATE296T1 (de) | 1981-10-15 |
Family
ID=6054580
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| AT79104012T ATE296T1 (de) | 1978-11-13 | 1979-10-17 | Cvd-beschichtungsvorrichtung fuer kleinteile und ihre verwendung zur beschichtung von spannelementen von dentalturbinen. |
Country Status (4)
| Country | Link |
|---|---|
| US (1) | US4258658A (de) |
| EP (1) | EP0011148B1 (de) |
| AT (1) | ATE296T1 (de) |
| DE (1) | DE2849240C2 (de) |
Families Citing this family (21)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4499354A (en) * | 1982-10-06 | 1985-02-12 | General Instrument Corp. | Susceptor for radiant absorption heater system |
| US4920908A (en) * | 1983-03-29 | 1990-05-01 | Genus, Inc. | Method and apparatus for deposition of tungsten silicides |
| US4565157A (en) * | 1983-03-29 | 1986-01-21 | Genus, Inc. | Method and apparatus for deposition of tungsten silicides |
| US4732110A (en) * | 1983-04-29 | 1988-03-22 | Hughes Aircraft Company | Inverted positive vertical flow chemical vapor deposition reactor chamber |
| US4459104A (en) * | 1983-06-01 | 1984-07-10 | Quartz Engineering & Materials, Inc. | Cantilever diffusion tube apparatus and method |
| US4550684A (en) * | 1983-08-11 | 1985-11-05 | Genus, Inc. | Cooled optical window for semiconductor wafer heating |
| US4680447A (en) * | 1983-08-11 | 1987-07-14 | Genus, Inc. | Cooled optical window for semiconductor wafer heating |
| US4579080A (en) * | 1983-12-09 | 1986-04-01 | Applied Materials, Inc. | Induction heated reactor system for chemical vapor deposition |
| DE3403894C1 (de) * | 1984-02-04 | 1985-07-25 | Kulzer & Co GmbH, 6393 Wehrheim | Vorrichtung zum Beschichten eines metallischen Dentalprothesenteils und Verfahren zum Betrieb einer solchen Vorrichtung |
| US4653428A (en) * | 1985-05-10 | 1987-03-31 | General Electric Company | Selective chemical vapor deposition apparatus |
| US4606935A (en) * | 1985-10-10 | 1986-08-19 | International Business Machines Corporation | Process and apparatus for producing high purity oxidation on a semiconductor substrate |
| US4796562A (en) * | 1985-12-03 | 1989-01-10 | Varian Associates, Inc. | Rapid thermal cvd apparatus |
| US4709655A (en) * | 1985-12-03 | 1987-12-01 | Varian Associates, Inc. | Chemical vapor deposition apparatus |
| US6321680B2 (en) * | 1997-08-11 | 2001-11-27 | Torrex Equipment Corporation | Vertical plasma enhanced process apparatus and method |
| US7393561B2 (en) | 1997-08-11 | 2008-07-01 | Applied Materials, Inc. | Method and apparatus for layer by layer deposition of thin films |
| US6780464B2 (en) | 1997-08-11 | 2004-08-24 | Torrex Equipment | Thermal gradient enhanced CVD deposition at low pressure |
| US20030049372A1 (en) * | 1997-08-11 | 2003-03-13 | Cook Robert C. | High rate deposition at low pressures in a small batch reactor |
| US6564811B2 (en) * | 2001-03-26 | 2003-05-20 | Intel Corporation | Method of reducing residue deposition onto ash chamber base surfaces |
| KR100892123B1 (ko) * | 2008-12-31 | 2009-04-09 | (주)세미머티리얼즈 | 폴리 실리콘 증착장치 |
| DE102009038799B4 (de) | 2009-08-25 | 2011-07-28 | Grenzebach Maschinenbau GmbH, 86663 | Verfahren und Vorrichtung zum blasenfreien Verkleben großflächiger Glasplatten |
| US10100409B2 (en) * | 2015-02-11 | 2018-10-16 | United Technologies Corporation | Isothermal warm wall CVD reactor |
Family Cites Families (17)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| GB200879A (en) * | 1922-03-24 | 1923-07-24 | Philips Nv | Improvements in or relating to the manufacture of bodies from metals having a high melting-point |
| NL254549A (de) * | 1959-08-07 | |||
| US3213827A (en) * | 1962-03-13 | 1965-10-26 | Union Carbide Corp | Apparatus for gas plating bulk material to metallize the same |
| DE1521494B1 (de) * | 1966-02-25 | 1970-11-26 | Siemens Ag | Vorrichtung zum Eindiffundieren von Fremdstoffen in Halbleiterkoerper |
| US3408982A (en) * | 1966-08-25 | 1968-11-05 | Emil R. Capita | Vapor plating apparatus including rotatable substrate support |
| GB1199531A (en) * | 1968-03-05 | 1970-07-22 | Edwards High Vacuum Int Ltd | Apparatus for Vacuum Deposition. |
| US3493220A (en) * | 1968-03-07 | 1970-02-03 | Us Navy | Furnace for treating material in a gas atmosphere |
| US3456616A (en) * | 1968-05-08 | 1969-07-22 | Texas Instruments Inc | Vapor deposition apparatus including orbital substrate support |
| DE1769520A1 (de) * | 1968-06-05 | 1972-03-02 | Siemens Ag | Verfahren zum epitaktischen Abscheiden von kristallinem Material aus der Gasphase,insbesondere fuer Halbleiterzwecke |
| US3721210A (en) * | 1971-04-19 | 1973-03-20 | Texas Instruments Inc | Low volume deposition reactor |
| US3796182A (en) * | 1971-12-16 | 1974-03-12 | Applied Materials Tech | Susceptor structure for chemical vapor deposition reactor |
| GB1356769A (en) * | 1973-03-27 | 1974-06-12 | Cit Alcatel | Apparatus and method for depositing thin layers on a substrate |
| US4140078A (en) * | 1974-03-16 | 1979-02-20 | Leybold Heraeus Gmbh & Co. Kg | Method and apparatus for regulating evaporating rate and layer build up in the production of thin layers |
| US4018184A (en) * | 1975-07-28 | 1977-04-19 | Mitsubishi Denki Kabushiki Kaisha | Apparatus for treatment of semiconductor wafer |
| DE2539434A1 (de) * | 1975-09-04 | 1977-03-17 | Siemens Ag | Vorrichtung zur rundumbeschichtung metallischer kleinteile |
| US4116161A (en) * | 1976-11-12 | 1978-09-26 | Mcdonnell Douglas Corporation | Dual tumbling barrel plating apparatus |
| DE2739258C2 (de) * | 1977-08-31 | 1985-06-20 | Wacker-Chemitronic Gesellschaft für Elektronik-Grundstoffe mbH, 8263 Burghausen | Verfahren zur Aufbringung einer Siliciumcarbid und Siliciumnitrid enthaltenden Schutzschicht auf Kohlenstofformkörper |
-
1978
- 1978-11-13 DE DE2849240A patent/DE2849240C2/de not_active Expired
-
1979
- 1979-10-17 AT AT79104012T patent/ATE296T1/de active
- 1979-10-17 EP EP79104012A patent/EP0011148B1/de not_active Expired
- 1979-10-24 US US06/087,886 patent/US4258658A/en not_active Expired - Lifetime
Also Published As
| Publication number | Publication date |
|---|---|
| EP0011148A1 (de) | 1980-05-28 |
| DE2849240C2 (de) | 1983-01-13 |
| EP0011148B1 (de) | 1981-10-14 |
| US4258658A (en) | 1981-03-31 |
| DE2849240A1 (de) | 1980-05-14 |
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