ATE296T1 - Cvd-beschichtungsvorrichtung fuer kleinteile und ihre verwendung zur beschichtung von spannelementen von dentalturbinen. - Google Patents

Cvd-beschichtungsvorrichtung fuer kleinteile und ihre verwendung zur beschichtung von spannelementen von dentalturbinen.

Info

Publication number
ATE296T1
ATE296T1 AT79104012T AT79104012T ATE296T1 AT E296 T1 ATE296 T1 AT E296T1 AT 79104012 T AT79104012 T AT 79104012T AT 79104012 T AT79104012 T AT 79104012T AT E296 T1 ATE296 T1 AT E296T1
Authority
AT
Austria
Prior art keywords
small parts
coating
clamping elements
cvd
frame
Prior art date
Application number
AT79104012T
Other languages
English (en)
Inventor
Alfred Dr. Politycki
Konrad Dr. Hieber
Manfred Stolz
Original Assignee
Siemens Aktiengesellschaft Berlin Und Muenchen
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Siemens Aktiengesellschaft Berlin Und Muenchen filed Critical Siemens Aktiengesellschaft Berlin Und Muenchen
Application granted granted Critical
Publication of ATE296T1 publication Critical patent/ATE296T1/de

Links

Classifications

    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45563Gas nozzles
    • C23C16/45565Shower nozzles
    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber

Landscapes

  • Chemical & Material Sciences (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Chemical Vapour Deposition (AREA)
AT79104012T 1978-11-13 1979-10-17 Cvd-beschichtungsvorrichtung fuer kleinteile und ihre verwendung zur beschichtung von spannelementen von dentalturbinen. ATE296T1 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
DE2849240A DE2849240C2 (de) 1978-11-13 1978-11-13 CVD-Beschichtungsvorrichtung für Kleinteile und ihre Verwendung
EP79104012A EP0011148B1 (de) 1978-11-13 1979-10-17 CVD-Beschichtungsvorrichtung für Kleinteile und ihre Verwendung zur Beschichtung von Spannelementen von Dentalturbinen

Publications (1)

Publication Number Publication Date
ATE296T1 true ATE296T1 (de) 1981-10-15

Family

ID=6054580

Family Applications (1)

Application Number Title Priority Date Filing Date
AT79104012T ATE296T1 (de) 1978-11-13 1979-10-17 Cvd-beschichtungsvorrichtung fuer kleinteile und ihre verwendung zur beschichtung von spannelementen von dentalturbinen.

Country Status (4)

Country Link
US (1) US4258658A (de)
EP (1) EP0011148B1 (de)
AT (1) ATE296T1 (de)
DE (1) DE2849240C2 (de)

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US4499354A (en) * 1982-10-06 1985-02-12 General Instrument Corp. Susceptor for radiant absorption heater system
US4565157A (en) * 1983-03-29 1986-01-21 Genus, Inc. Method and apparatus for deposition of tungsten silicides
US4920908A (en) * 1983-03-29 1990-05-01 Genus, Inc. Method and apparatus for deposition of tungsten silicides
US4732110A (en) * 1983-04-29 1988-03-22 Hughes Aircraft Company Inverted positive vertical flow chemical vapor deposition reactor chamber
US4459104A (en) * 1983-06-01 1984-07-10 Quartz Engineering & Materials, Inc. Cantilever diffusion tube apparatus and method
US4550684A (en) * 1983-08-11 1985-11-05 Genus, Inc. Cooled optical window for semiconductor wafer heating
US4680447A (en) * 1983-08-11 1987-07-14 Genus, Inc. Cooled optical window for semiconductor wafer heating
US4579080A (en) * 1983-12-09 1986-04-01 Applied Materials, Inc. Induction heated reactor system for chemical vapor deposition
DE3403894C1 (de) * 1984-02-04 1985-07-25 Kulzer & Co GmbH, 6393 Wehrheim Vorrichtung zum Beschichten eines metallischen Dentalprothesenteils und Verfahren zum Betrieb einer solchen Vorrichtung
US4653428A (en) * 1985-05-10 1987-03-31 General Electric Company Selective chemical vapor deposition apparatus
US4606935A (en) * 1985-10-10 1986-08-19 International Business Machines Corporation Process and apparatus for producing high purity oxidation on a semiconductor substrate
US4796562A (en) * 1985-12-03 1989-01-10 Varian Associates, Inc. Rapid thermal cvd apparatus
US4709655A (en) * 1985-12-03 1987-12-01 Varian Associates, Inc. Chemical vapor deposition apparatus
US6321680B2 (en) * 1997-08-11 2001-11-27 Torrex Equipment Corporation Vertical plasma enhanced process apparatus and method
US20030049372A1 (en) * 1997-08-11 2003-03-13 Cook Robert C. High rate deposition at low pressures in a small batch reactor
US6780464B2 (en) 1997-08-11 2004-08-24 Torrex Equipment Thermal gradient enhanced CVD deposition at low pressure
US7393561B2 (en) 1997-08-11 2008-07-01 Applied Materials, Inc. Method and apparatus for layer by layer deposition of thin films
US6564811B2 (en) * 2001-03-26 2003-05-20 Intel Corporation Method of reducing residue deposition onto ash chamber base surfaces
KR100892123B1 (ko) * 2008-12-31 2009-04-09 (주)세미머티리얼즈 폴리 실리콘 증착장치
DE102009038799B4 (de) 2009-08-25 2011-07-28 Grenzebach Maschinenbau GmbH, 86663 Verfahren und Vorrichtung zum blasenfreien Verkleben großflächiger Glasplatten
US10100409B2 (en) * 2015-02-11 2018-10-16 United Technologies Corporation Isothermal warm wall CVD reactor

Family Cites Families (17)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB200879A (en) * 1922-03-24 1923-07-24 Philips Nv Improvements in or relating to the manufacture of bodies from metals having a high melting-point
NL254549A (de) * 1959-08-07
US3213827A (en) * 1962-03-13 1965-10-26 Union Carbide Corp Apparatus for gas plating bulk material to metallize the same
DE1521494B1 (de) * 1966-02-25 1970-11-26 Siemens Ag Vorrichtung zum Eindiffundieren von Fremdstoffen in Halbleiterkoerper
US3408982A (en) * 1966-08-25 1968-11-05 Emil R. Capita Vapor plating apparatus including rotatable substrate support
GB1199531A (en) * 1968-03-05 1970-07-22 Edwards High Vacuum Int Ltd Apparatus for Vacuum Deposition.
US3493220A (en) * 1968-03-07 1970-02-03 Us Navy Furnace for treating material in a gas atmosphere
US3456616A (en) * 1968-05-08 1969-07-22 Texas Instruments Inc Vapor deposition apparatus including orbital substrate support
DE1769520A1 (de) * 1968-06-05 1972-03-02 Siemens Ag Verfahren zum epitaktischen Abscheiden von kristallinem Material aus der Gasphase,insbesondere fuer Halbleiterzwecke
US3721210A (en) * 1971-04-19 1973-03-20 Texas Instruments Inc Low volume deposition reactor
US3796182A (en) * 1971-12-16 1974-03-12 Applied Materials Tech Susceptor structure for chemical vapor deposition reactor
GB1356769A (en) * 1973-03-27 1974-06-12 Cit Alcatel Apparatus and method for depositing thin layers on a substrate
US4140078A (en) * 1974-03-16 1979-02-20 Leybold Heraeus Gmbh & Co. Kg Method and apparatus for regulating evaporating rate and layer build up in the production of thin layers
US4018184A (en) * 1975-07-28 1977-04-19 Mitsubishi Denki Kabushiki Kaisha Apparatus for treatment of semiconductor wafer
DE2539434A1 (de) * 1975-09-04 1977-03-17 Siemens Ag Vorrichtung zur rundumbeschichtung metallischer kleinteile
US4116161A (en) * 1976-11-12 1978-09-26 Mcdonnell Douglas Corporation Dual tumbling barrel plating apparatus
DE2739258C2 (de) * 1977-08-31 1985-06-20 Wacker-Chemitronic Gesellschaft für Elektronik-Grundstoffe mbH, 8263 Burghausen Verfahren zur Aufbringung einer Siliciumcarbid und Siliciumnitrid enthaltenden Schutzschicht auf Kohlenstofformkörper

Also Published As

Publication number Publication date
EP0011148B1 (de) 1981-10-14
EP0011148A1 (de) 1980-05-28
DE2849240C2 (de) 1983-01-13
DE2849240A1 (de) 1980-05-14
US4258658A (en) 1981-03-31

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