ATE299292T1 - Vorrichtung zur erzeugung von plasma mit hoher dichte - Google Patents

Vorrichtung zur erzeugung von plasma mit hoher dichte

Info

Publication number
ATE299292T1
ATE299292T1 AT00302875T AT00302875T ATE299292T1 AT E299292 T1 ATE299292 T1 AT E299292T1 AT 00302875 T AT00302875 T AT 00302875T AT 00302875 T AT00302875 T AT 00302875T AT E299292 T1 ATE299292 T1 AT E299292T1
Authority
AT
Austria
Prior art keywords
high density
density plasma
plasma
generating high
chamber
Prior art date
Application number
AT00302875T
Other languages
English (en)
Inventor
Michael John Thwaites
Original Assignee
Plasma Quest Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Plasma Quest Ltd filed Critical Plasma Quest Ltd
Application granted granted Critical
Publication of ATE299292T1 publication Critical patent/ATE299292T1/de

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • H01J37/321—Radio frequency generated discharge the radio frequency energy being inductively coupled to the plasma
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/3266—Magnetic control means
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering

Landscapes

  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Plasma & Fusion (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Plasma Technology (AREA)
  • Electron Sources, Ion Sources (AREA)
  • Drying Of Semiconductors (AREA)
  • Chemical Vapour Deposition (AREA)
AT00302875T 2000-04-04 2000-04-05 Vorrichtung zur erzeugung von plasma mit hoher dichte ATE299292T1 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US09/542,880 US6463873B1 (en) 2000-04-04 2000-04-04 High density plasmas
EP00302875A EP1143481B1 (de) 2000-04-04 2000-04-05 Vorrichtung zur Erzeugung von Plasma mit hoher Dichte

Publications (1)

Publication Number Publication Date
ATE299292T1 true ATE299292T1 (de) 2005-07-15

Family

ID=26073093

Family Applications (1)

Application Number Title Priority Date Filing Date
AT00302875T ATE299292T1 (de) 2000-04-04 2000-04-05 Vorrichtung zur erzeugung von plasma mit hoher dichte

Country Status (5)

Country Link
US (1) US6463873B1 (de)
EP (1) EP1143481B1 (de)
AT (1) ATE299292T1 (de)
DE (1) DE60021167T2 (de)
ES (1) ES2245632T3 (de)

Families Citing this family (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7686926B2 (en) * 2004-05-26 2010-03-30 Applied Materials, Inc. Multi-step process for forming a metal barrier in a sputter reactor
US7527713B2 (en) * 2004-05-26 2009-05-05 Applied Materials, Inc. Variable quadruple electromagnet array in plasma processing
CN1322167C (zh) * 2004-11-05 2007-06-20 哈尔滨工业大学 复合等离子体表面处理装置
US8326610B2 (en) * 2007-10-24 2012-12-04 Red Shift Company, Llc Producing phonitos based on feature vectors
GB0722956D0 (en) * 2007-11-22 2008-01-02 Barnes Charles F J Magnetic write head
US20090238985A1 (en) * 2008-03-24 2009-09-24 Chau Hugh D Systems and methods for deposition
US8703001B1 (en) 2008-10-02 2014-04-22 Sarpangala Hari Harakeshava Hegde Grid assemblies for use in ion beam etching systems and methods of utilizing the grid assemblies
US20100096254A1 (en) * 2008-10-22 2010-04-22 Hari Hegde Deposition systems and methods
US20110226617A1 (en) * 2010-03-22 2011-09-22 Applied Materials, Inc. Dielectric deposition using a remote plasma source
GB201006567D0 (en) 2010-04-20 2010-06-02 Plasma Quest Ltd High density plasma source
GB2576544A (en) * 2018-08-23 2020-02-26 Dyson Technology Ltd An apparatus
GB2593863B (en) * 2020-02-28 2022-08-03 Plasma Quest Ltd High Density Vacuum Plasma Source
CN114205985A (zh) * 2021-11-29 2022-03-18 苏州大学 一种小束径螺旋波等离子体产生装置及产生方法

Family Cites Families (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
AU8288282A (en) 1981-05-04 1982-11-11 Optical Coating Laboratory, Inc. Production and utilization of activated molecular beams
GB8629634D0 (en) * 1986-12-11 1987-01-21 Dobson C D Reactive ion & sputter etching
JPH01139762A (ja) * 1987-11-25 1989-06-01 Matsushita Electric Ind Co Ltd スパッタリング装置
US5429070A (en) * 1989-06-13 1995-07-04 Plasma & Materials Technologies, Inc. High density plasma deposition and etching apparatus
US5122251A (en) * 1989-06-13 1992-06-16 Plasma & Materials Technologies, Inc. High density plasma deposition and etching apparatus
US4990229A (en) 1989-06-13 1991-02-05 Plasma & Materials Technologies, Inc. High density plasma deposition and etching apparatus
JP2519364B2 (ja) 1990-12-03 1996-07-31 アプライド マテリアルズ インコーポレイテッド Ｕｈｆ／ｖｈｆ共振アンテナ供給源を用いたプラズマリアクタ
JP3553688B2 (ja) * 1995-05-10 2004-08-11 アネルバ株式会社 プラズマ処理装置及びプラズマ処理方法
US6264812B1 (en) 1995-11-15 2001-07-24 Applied Materials, Inc. Method and apparatus for generating a plasma
GB9602948D0 (en) 1996-02-13 1996-04-10 Boc Group Plc Thin film deposition
US6514390B1 (en) 1996-10-17 2003-02-04 Applied Materials, Inc. Method to eliminate coil sputtering in an ICP source
US5919342A (en) * 1997-02-26 1999-07-06 Applied Materials, Inc. Method for depositing golden titanium nitride
US6015465A (en) * 1998-04-08 2000-01-18 Applied Materials, Inc. Temperature control system for semiconductor process chamber
US6080287A (en) 1998-05-06 2000-06-27 Tokyo Electron Limited Method and apparatus for ionized physical vapor deposition
US6132575A (en) 1998-09-28 2000-10-17 Alcatel Magnetron reactor for providing a high density, inductively coupled plasma source for sputtering metal and dielectric films

Also Published As

Publication number Publication date
ES2245632T3 (es) 2006-01-16
DE60021167D1 (de) 2005-08-11
EP1143481B1 (de) 2005-07-06
US6463873B1 (en) 2002-10-15
EP1143481A1 (de) 2001-10-10
DE60021167T2 (de) 2006-05-18

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Legal Events

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RER Ceased as to paragraph 5 lit. 3 law introducing patent treaties