ATE234951T1 - Grossflächige einkristalline monoatomschicht aus kohlenstoff vom diamant-typ und verfahren zu ihrer herstellung - Google Patents

Grossflächige einkristalline monoatomschicht aus kohlenstoff vom diamant-typ und verfahren zu ihrer herstellung

Info

Publication number
ATE234951T1
ATE234951T1 AT99973081T AT99973081T ATE234951T1 AT E234951 T1 ATE234951 T1 AT E234951T1 AT 99973081 T AT99973081 T AT 99973081T AT 99973081 T AT99973081 T AT 99973081T AT E234951 T1 ATE234951 T1 AT E234951T1
Authority
AT
Austria
Prior art keywords
layer
diamond
type carbon
monoatom
crystalline
Prior art date
Application number
AT99973081T
Other languages
English (en)
Inventor
Vincent Derycke
Gerald Dujardin
Andrew Mayne
Patrick Soukiassian
Original Assignee
Commissariat Energie Atomique
Centre Nat Rech Scient
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Commissariat Energie Atomique, Centre Nat Rech Scient filed Critical Commissariat Energie Atomique
Application granted granted Critical
Publication of ATE234951T1 publication Critical patent/ATE234951T1/de

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/12—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
    • H01L29/16—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only elements of Group IV of the Periodic Table
    • H01L29/1602—Diamond
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B1/00—Single-crystal growth directly from the solid state
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/02—Elements
    • C30B29/04—Diamond
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/10—Inorganic compounds or compositions
    • C30B29/36—Carbides
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B33/00—After-treatment of single crystals or homogeneous polycrystalline material with defined structure
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/12—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
    • H01L29/16—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only elements of Group IV of the Periodic Table
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
    • Y10S117/901—Levitation, reduced gravity, microgravity, space
    • Y10S117/902—Specified orientation, shape, crystallography, or size of seed or substrate

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Ceramic Engineering (AREA)
  • General Physics & Mathematics (AREA)
  • Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Inorganic Chemistry (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Carbon And Carbon Compounds (AREA)
AT99973081T 1998-12-02 1999-12-01 Grossflächige einkristalline monoatomschicht aus kohlenstoff vom diamant-typ und verfahren zu ihrer herstellung ATE234951T1 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
FR9815218A FR2786794B1 (fr) 1998-12-02 1998-12-02 Couche monoatomique et monocristalline de grande taille, en carbone de type diamant, et procede de fabrication de cette couche
PCT/FR1999/002979 WO2000032853A1 (fr) 1998-12-02 1999-12-01 Couche monoatomique et monocristalline de grande taille, en carbone de type diamant, et procede de fabrication de cette couche

Publications (1)

Publication Number Publication Date
ATE234951T1 true ATE234951T1 (de) 2003-04-15

Family

ID=9533492

Family Applications (1)

Application Number Title Priority Date Filing Date
AT99973081T ATE234951T1 (de) 1998-12-02 1999-12-01 Grossflächige einkristalline monoatomschicht aus kohlenstoff vom diamant-typ und verfahren zu ihrer herstellung

Country Status (9)

Country Link
US (1) US6924509B2 (de)
EP (1) EP1137826B1 (de)
JP (1) JP2002531362A (de)
AT (1) ATE234951T1 (de)
CA (1) CA2352985C (de)
DE (1) DE69906129T2 (de)
DK (1) DK1137826T3 (de)
FR (1) FR2786794B1 (de)
WO (1) WO2000032853A1 (de)

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2823770B1 (fr) * 2001-04-19 2004-05-21 Commissariat Energie Atomique Procede de traitement de la surface d'un materiau semiconducteur, utilisant notamment l'hydrogene, et surface obtenue par ce procede
FR2823739B1 (fr) * 2001-04-19 2003-05-16 Commissariat Energie Atomique Procede de fabrication de nanostructures unidimensionnelles et nanostructures obtenues par ce procede
FR2841892B1 (fr) * 2002-07-05 2005-05-06 Commissariat Energie Atomique Nano-objets metalliques, formes sur des surfaces de carbure de silicium, et procede de fabrication de ces nano-objets
US8110476B2 (en) 2008-04-11 2012-02-07 Sandisk 3D Llc Memory cell that includes a carbon-based memory element and methods of forming the same
US20100032639A1 (en) * 2008-08-07 2010-02-11 Sandisk 3D Llc Memory cell that includes a carbon-based memory element and methods of forming the same
US20110108854A1 (en) * 2009-11-10 2011-05-12 Chien-Min Sung Substantially lattice matched semiconductor materials and associated methods
CN105384160B (zh) * 2015-09-25 2017-11-03 郑州华晶金刚石股份有限公司 一种纳米碳晶

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5225366A (en) * 1990-06-22 1993-07-06 The United States Of America As Represented By The Secretary Of The Navy Apparatus for and a method of growing thin films of elemental semiconductors
JP2895179B2 (ja) * 1990-08-04 1999-05-24 財団法人ファインセラミックスセンター ダイヤモンド単結晶薄膜の気相合成方法
JPH04114995A (ja) * 1990-09-04 1992-04-15 Matsushita Electric Ind Co Ltd ダイヤモンド薄膜の堆積方法
US5397428A (en) * 1991-12-20 1995-03-14 The University Of North Carolina At Chapel Hill Nucleation enhancement for chemical vapor deposition of diamond
US5516500A (en) * 1994-08-09 1996-05-14 Qqc, Inc. Formation of diamond materials by rapid-heating and rapid-quenching of carbon-containing materials
FR2757183B1 (fr) * 1996-12-16 1999-02-05 Commissariat Energie Atomique Fils atomiques de grande longueur et de grande stabilite, procede de fabrication de ces fils, application en nano-electronique

Also Published As

Publication number Publication date
FR2786794B1 (fr) 2001-03-02
US20050035380A1 (en) 2005-02-17
WO2000032853A1 (fr) 2000-06-08
DK1137826T3 (da) 2003-07-14
JP2002531362A (ja) 2002-09-24
FR2786794A1 (fr) 2000-06-09
DE69906129T2 (de) 2003-11-27
EP1137826A1 (de) 2001-10-04
US6924509B2 (en) 2005-08-02
DE69906129D1 (de) 2003-04-24
CA2352985C (fr) 2008-04-01
EP1137826B1 (de) 2003-03-19
CA2352985A1 (fr) 2000-06-08

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