ATE202421T1 - Metallspülungsverfahren mit kontrollierter metallmikrokorrosionsreduktion - Google Patents

Metallspülungsverfahren mit kontrollierter metallmikrokorrosionsreduktion

Info

Publication number
ATE202421T1
ATE202421T1 AT96870157T AT96870157T ATE202421T1 AT E202421 T1 ATE202421 T1 AT E202421T1 AT 96870157 T AT96870157 T AT 96870157T AT 96870157 T AT96870157 T AT 96870157T AT E202421 T1 ATE202421 T1 AT E202421T1
Authority
AT
Austria
Prior art keywords
metal
microcorrosion
reduction
rinsing
flushing process
Prior art date
Application number
AT96870157T
Other languages
English (en)
Inventor
Antonio Rotondaro
Rita Vos
Mark Heyns
Original Assignee
Interuniversitaire Microelektr
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Interuniversitaire Microelektr filed Critical Interuniversitaire Microelektr
Application granted granted Critical
Publication of ATE202421T1 publication Critical patent/ATE202421T1/de

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02041—Cleaning
    • H01L21/02057—Cleaning during device manufacture
    • H01L21/02068—Cleaning during device manufacture during, before or after processing of conductive layers, e.g. polysilicon or amorphous silicon layers
    • H01L21/02071—Cleaning during device manufacture during, before or after processing of conductive layers, e.g. polysilicon or amorphous silicon layers the processing being a delineation, e.g. RIE, of conductive layers
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/26—Processing photosensitive materials; Apparatus therefor
    • G03F7/42—Stripping or agents therefor
    • G03F7/422—Stripping or agents therefor using liquids only
    • G03F7/423—Stripping or agents therefor using liquids only containing mineral acids or salts thereof, containing mineral oxidizing substances, e.g. peroxy compounds
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3105—After-treatment
    • H01L21/311—Etching the insulating layers by chemical or physical means
    • H01L21/31127—Etching organic layers
    • H01L21/31133—Etching organic layers by chemical means

Landscapes

  • Engineering & Computer Science (AREA)
  • General Physics & Mathematics (AREA)
  • Physics & Mathematics (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Power Engineering (AREA)
  • Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Cleaning Or Drying Semiconductors (AREA)
  • Manufacture And Refinement Of Metals (AREA)
  • Cleaning And De-Greasing Of Metallic Materials By Chemical Methods (AREA)
AT96870157T 1996-12-09 1996-12-09 Metallspülungsverfahren mit kontrollierter metallmikrokorrosionsreduktion ATE202421T1 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
EP96870157A EP0846985B1 (de) 1996-12-09 1996-12-09 Metallspülungsverfahren mit kontrollierter Metallmikrokorrosionsreduktion

Publications (1)

Publication Number Publication Date
ATE202421T1 true ATE202421T1 (de) 2001-07-15

Family

ID=8226184

Family Applications (1)

Application Number Title Priority Date Filing Date
AT96870157T ATE202421T1 (de) 1996-12-09 1996-12-09 Metallspülungsverfahren mit kontrollierter metallmikrokorrosionsreduktion

Country Status (4)

Country Link
US (1) US6153018A (de)
EP (1) EP0846985B1 (de)
AT (1) ATE202421T1 (de)
DE (1) DE69613476T2 (de)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2836562B2 (ja) * 1996-02-08 1998-12-14 日本電気株式会社 半導体ウェハのウェット処理方法
US6878213B1 (en) 1998-12-07 2005-04-12 Scp Global Technologies, Inc. Process and system for rinsing of semiconductor substrates
JP3550507B2 (ja) * 1999-03-25 2004-08-04 Ｎｅｃエレクトロニクス株式会社 被洗浄体のすすぎ方法およびその装置
US6422246B1 (en) * 2000-02-29 2002-07-23 United Microelectronics Corp. Method removing residual photoresist

Family Cites Families (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3085917A (en) * 1960-05-27 1963-04-16 Gen Electric Chemical cleaning method and material
US3813309A (en) * 1969-12-23 1974-05-28 Ibm Method for stripping resists from substrates
US3649260A (en) * 1970-02-27 1972-03-14 Sylvania Electric Prod Process for making refractory metal material
US3787239A (en) * 1970-09-25 1974-01-22 Allied Chem Chemical strippers and method of using
US4778532A (en) * 1985-06-24 1988-10-18 Cfm Technologies Limited Partnership Process and apparatus for treating wafers with process fluids
US5102777A (en) * 1990-02-01 1992-04-07 Ardrox Inc. Resist stripping
US5201960A (en) * 1991-02-04 1993-04-13 Applied Photonics Research, Inc. Method for removing photoresist and other adherent materials from substrates
US5308745A (en) * 1992-11-06 1994-05-03 J. T. Baker Inc. Alkaline-containing photoresist stripping compositions producing reduced metal corrosion with cross-linked or hardened resist resins
US5472830A (en) * 1994-04-18 1995-12-05 Ocg Microelectronic Materials, Inc. Non-corrosion photoresist stripping composition
JP2836562B2 (ja) * 1996-02-08 1998-12-14 日本電気株式会社 半導体ウェハのウェット処理方法

Also Published As

Publication number Publication date
EP0846985A1 (de) 1998-06-10
US6153018A (en) 2000-11-28
EP0846985B1 (de) 2001-06-20
DE69613476T2 (de) 2002-04-18
DE69613476D1 (de) 2001-07-26

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Legal Events

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RER Ceased as to paragraph 5 lit. 3 law introducing patent treaties