ATE135717T1 - Strahlungsempfindliche zusammensetzung und deren verwendung bei der herstellung von elektrochemischen ionensensoren - Google Patents

Strahlungsempfindliche zusammensetzung und deren verwendung bei der herstellung von elektrochemischen ionensensoren

Info

Publication number
ATE135717T1
ATE135717T1 AT90200914T AT90200914T ATE135717T1 AT E135717 T1 ATE135717 T1 AT E135717T1 AT 90200914 T AT90200914 T AT 90200914T AT 90200914 T AT90200914 T AT 90200914T AT E135717 T1 ATE135717 T1 AT E135717T1
Authority
AT
Austria
Prior art keywords
radiation
production
composition
sensitive composition
radiation sensitive
Prior art date
Application number
AT90200914T
Other languages
English (en)
Inventor
Christopher Peter Moore
Malcolm Donald Purbrick
Derek Alan Thomason
Kevin John Parr
Original Assignee
Johnson & Johnson Clin Diag
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Johnson & Johnson Clin Diag filed Critical Johnson & Johnson Clin Diag
Application granted granted Critical
Publication of ATE135717T1 publication Critical patent/ATE135717T1/de

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08F—MACROMOLECULAR COMPOUNDS OBTAINED BY REACTIONS ONLY INVOLVING CARBON-TO-CARBON UNSATURATED BONDS
    • C08F246/00—Copolymers in which the nature of only the monomers in minority is defined
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08F—MACROMOLECULAR COMPOUNDS OBTAINED BY REACTIONS ONLY INVOLVING CARBON-TO-CARBON UNSATURATED BONDS
    • C08F8/00—Chemical modification by after-treatment
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N27/00—Investigating or analysing materials by the use of electric, electrochemical, or magnetic means
    • G01N27/26—Investigating or analysing materials by the use of electric, electrochemical, or magnetic means by investigating electrochemical variables; by using electrolysis or electrophoresis
    • G01N27/403—Cells and electrode assemblies
    • G01N27/414—Ion-sensitive or chemical field-effect transistors, i.e. ISFETS or CHEMFETS

Landscapes

  • Chemical & Material Sciences (AREA)
  • Health & Medical Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Medicinal Chemistry (AREA)
  • Organic Chemistry (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Polymers & Plastics (AREA)
  • Pathology (AREA)
  • General Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Biochemistry (AREA)
  • General Health & Medical Sciences (AREA)
  • General Physics & Mathematics (AREA)
  • Immunology (AREA)
  • Engineering & Computer Science (AREA)
  • Electrochemistry (AREA)
  • Molecular Biology (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Physics & Mathematics (AREA)
  • Organic Low-Molecular-Weight Compounds And Preparation Thereof (AREA)
  • Compositions Of Macromolecular Compounds (AREA)
  • Materials For Photolithography (AREA)
  • Pyridine Compounds (AREA)
  • Light Receiving Elements (AREA)
  • Photometry And Measurement Of Optical Pulse Characteristics (AREA)
  • Addition Polymer Or Copolymer, Post-Treatments, Or Chemical Modifications (AREA)
  • Insulated Gate Type Field-Effect Transistor (AREA)
  • Investigating Or Analyzing Materials By The Use Of Electric Means (AREA)
  • Manufacture Of Macromolecular Shaped Articles (AREA)
AT90200914T 1989-04-26 1990-04-13 Strahlungsempfindliche zusammensetzung und deren verwendung bei der herstellung von elektrochemischen ionensensoren ATE135717T1 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
GB898909561A GB8909561D0 (en) 1989-04-26 1989-04-26 Radiation-sensitive composition and use thereof in the preparation of electrochemical ion sensors

Publications (1)

Publication Number Publication Date
ATE135717T1 true ATE135717T1 (de) 1996-04-15

Family

ID=10655761

Family Applications (1)

Application Number Title Priority Date Filing Date
AT90200914T ATE135717T1 (de) 1989-04-26 1990-04-13 Strahlungsempfindliche zusammensetzung und deren verwendung bei der herstellung von elektrochemischen ionensensoren

Country Status (10)

Country Link
US (1) US5240586A (de)
EP (1) EP0395136B1 (de)
JP (1) JPH0333649A (de)
AT (1) ATE135717T1 (de)
CA (1) CA2014501A1 (de)
DE (1) DE69025975T2 (de)
DK (1) DK0395136T3 (de)
ES (1) ES2085321T3 (de)
GB (1) GB8909561D0 (de)
GR (1) GR3020137T3 (de)

Families Citing this family (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5854863A (en) * 1996-03-15 1998-12-29 Erb; Judith Surface treatment and light injection method and apparatus
US7246627B2 (en) * 1997-06-11 2007-07-24 Ethicon, Inc. Monitoring of cleaning process
US6406817B2 (en) * 1998-07-01 2002-06-18 Ube Industries, Ltd. Crosslinked polymer, electrolyte using the polymer, and nonaqueous secondary battery using the electrolyte
DE19857953C2 (de) * 1998-12-16 2001-02-15 Conducta Endress & Hauser Vorrichtung zum Messen der Konzentration von Ionen in einer Meßflüssigkeit
DE19907164C2 (de) * 1999-02-19 2002-10-24 Micronas Gmbh Meßeinrichtung sowie Verfahren zu deren Herstellung
EP1085320A1 (de) 1999-09-13 2001-03-21 Interuniversitair Micro-Elektronica Centrum Vzw Vorrichtung auf Basis von organischem Material zur Erfassung eines Probenanalyts
EP1085319B1 (de) * 1999-09-13 2005-06-01 Interuniversitair Micro-Elektronica Centrum Vzw Vorrichtung auf Basis von organischem Material zur Erfassung eines Probenanalyts
JP3721328B2 (ja) * 2001-12-28 2005-11-30 日本電子株式会社 イオンセンサー用感応膜の製造方法
TW544752B (en) * 2002-05-20 2003-08-01 Univ Nat Yunlin Sci & Tech Method for producing SnO2 gate ion sensitive field effect transistor (ISFET), and method and device for measuring the temperature parameters, drift and hysteresis values thereof
US20040198859A1 (en) * 2003-04-03 2004-10-07 Nguyen Chau K. Photopolymerization systems and their use
TWI234284B (en) * 2004-08-30 2005-06-11 Univ Nat Yunlin Sci & Tech Manufacturing method of tin-oxide extending-type gate ion sensitive transistor, and the related detection circuit and read circuit

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5539042A (en) * 1978-09-14 1980-03-18 Tokyo Daigaku Ion selecting field-effect sensor
JPS5687672A (en) * 1979-12-15 1981-07-16 Anelva Corp Dry etching apparatus
GB2106522B (en) * 1981-08-21 1985-11-27 Kodak Ltd Radiation-sensitive crosslinking composition
US4361473A (en) * 1981-10-28 1982-11-30 Nova Biomedical Corporation Potassium ion-selective membrane electrode
US4592816A (en) * 1984-09-26 1986-06-03 Rohm And Haas Company Electrophoretic deposition process
CA1281246C (en) * 1986-04-03 1991-03-12 Thomas Fyles Polymer membrane for proton driven ion transport
EP0315788B1 (de) * 1987-10-13 1992-12-09 Taiyo Yuden Co., Ltd. Ionensensor

Also Published As

Publication number Publication date
DE69025975T2 (de) 1996-09-05
EP0395136B1 (de) 1996-03-20
CA2014501A1 (en) 1990-10-26
DE69025975D1 (de) 1996-04-25
GB8909561D0 (en) 1989-06-14
US5240586A (en) 1993-08-31
JPH0333649A (ja) 1991-02-13
DK0395136T3 (da) 1996-04-15
ES2085321T3 (es) 1996-06-01
GR3020137T3 (en) 1996-08-31
EP0395136A2 (de) 1990-10-31
EP0395136A3 (de) 1991-04-24

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Legal Events

Date Code Title Description
UEP Publication of translation of european patent specification
REN Ceased due to non-payment of the annual fee