ATE115645T1 - Verfahren zum aufdampfen eines diamantähnlichen films auf ein niedrig schmelzendes substrat. - Google Patents
Verfahren zum aufdampfen eines diamantähnlichen films auf ein niedrig schmelzendes substrat.Info
- Publication number
- ATE115645T1 ATE115645T1 AT91300010T AT91300010T ATE115645T1 AT E115645 T1 ATE115645 T1 AT E115645T1 AT 91300010 T AT91300010 T AT 91300010T AT 91300010 T AT91300010 T AT 91300010T AT E115645 T1 ATE115645 T1 AT E115645T1
- Authority
- AT
- Austria
- Prior art keywords
- substrate
- chamber
- diamond
- pressure
- differentially evacuated
- Prior art date
Links
Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
- C23C14/0605—Carbon
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/24—Vacuum evaporation
- C23C14/32—Vacuum evaporation by explosion; by evaporation and subsequent ionisation of the vapours, e.g. ion-plating
Landscapes
- Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Engineering & Computer Science (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Physical Vapour Deposition (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
- Carbon And Carbon Compounds (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US41784990A | 1990-01-29 | 1990-01-29 |
Publications (1)
Publication Number | Publication Date |
---|---|
ATE115645T1 true ATE115645T1 (de) | 1994-12-15 |
Family
ID=23655625
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
AT91300010T ATE115645T1 (de) | 1990-01-29 | 1991-01-02 | Verfahren zum aufdampfen eines diamantähnlichen films auf ein niedrig schmelzendes substrat. |
Country Status (3)
Country | Link |
---|---|
EP (1) | EP0440326B1 (de) |
AT (1) | ATE115645T1 (de) |
DE (1) | DE69105764T2 (de) |
Families Citing this family (11)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5401543A (en) * | 1993-11-09 | 1995-03-28 | Minnesota Mining And Manufacturing Company | Method for forming macroparticle-free DLC films by cathodic arc discharge |
GB9405029D0 (en) * | 1994-03-15 | 1994-04-27 | Franks Joseph Dr | Improved catheters and other tubular inserts |
US5569487A (en) * | 1995-01-23 | 1996-10-29 | General Electric Company | Capacitor dielectrics of silicon-doped amorphous hydrogenated carbon |
GB9709071D0 (en) * | 1997-05-02 | 1997-06-25 | Howmedica | A process for improving start up and steady rate friction of soft/compliant polyurethanes |
CN1049931C (zh) * | 1997-07-10 | 2000-03-01 | 北京理工大学 | 制备类金刚石薄膜的电化学沉积方法及其装置 |
TW578198B (en) * | 2001-08-24 | 2004-03-01 | Asml Us Inc | Atmospheric pressure wafer processing reactor having an internal pressure control system and method |
US7866342B2 (en) | 2002-12-18 | 2011-01-11 | Vapor Technologies, Inc. | Valve component for faucet |
US8555921B2 (en) | 2002-12-18 | 2013-10-15 | Vapor Technologies Inc. | Faucet component with coating |
US8220489B2 (en) | 2002-12-18 | 2012-07-17 | Vapor Technologies Inc. | Faucet with wear-resistant valve component |
US7866343B2 (en) | 2002-12-18 | 2011-01-11 | Masco Corporation Of Indiana | Faucet |
DE102013014147B4 (de) * | 2013-08-23 | 2017-02-16 | Centrotherm Photovoltaics Ag | Verfahren und vorrichtung zum detektieren einer plasmazündung |
Family Cites Families (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3756193A (en) * | 1972-05-01 | 1973-09-04 | Battelle Memorial Institute | Coating apparatus |
US4725345A (en) * | 1985-04-22 | 1988-02-16 | Kabushiki Kaisha Kenwood | Method for forming a hard carbon thin film on article and applications thereof |
US4777090A (en) * | 1986-11-03 | 1988-10-11 | Ovonic Synthetic Materials Company | Coated article and method of manufacturing the article |
-
1991
- 1991-01-02 AT AT91300010T patent/ATE115645T1/de not_active IP Right Cessation
- 1991-01-02 DE DE69105764T patent/DE69105764T2/de not_active Expired - Fee Related
- 1991-01-02 EP EP91300010A patent/EP0440326B1/de not_active Expired - Lifetime
Also Published As
Publication number | Publication date |
---|---|
EP0440326A1 (de) | 1991-08-07 |
DE69105764T2 (de) | 1995-04-27 |
DE69105764D1 (de) | 1995-01-26 |
EP0440326B1 (de) | 1994-12-14 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
RER | Ceased as to paragraph 5 lit. 3 law introducing patent treaties |