ATA9132000A - Integrierter schaltkreis mit leitung für hochfrequente signale - Google Patents

Integrierter schaltkreis mit leitung für hochfrequente signale

Info

Publication number
ATA9132000A
ATA9132000A AT9132000A AT9132000A ATA9132000A AT A9132000 A ATA9132000 A AT A9132000A AT 9132000 A AT9132000 A AT 9132000A AT 9132000 A AT9132000 A AT 9132000A AT A9132000 A ATA9132000 A AT A9132000A
Authority
AT
Austria
Prior art keywords
line
integrated circuit
frequency signals
signals
frequency
Prior art date
Application number
AT9132000A
Other languages
English (en)
Other versions
AT409901B (de
Original Assignee
Paschke Fritz Dr
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Paschke Fritz Dr filed Critical Paschke Fritz Dr
Priority to AT9132000A priority Critical patent/AT409901B/de
Publication of ATA9132000A publication Critical patent/ATA9132000A/de
Application granted granted Critical
Publication of AT409901B publication Critical patent/AT409901B/de

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01P—WAVEGUIDES; RESONATORS, LINES, OR OTHER DEVICES OF THE WAVEGUIDE TYPE
    • H01P3/00—Waveguides; Transmission lines of the waveguide type
    • H01P3/02—Waveguides; Transmission lines of the waveguide type with two longitudinal conductors
    • H01P3/08—Microstrips; Strip lines
    • H01P3/081—Microstriplines
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/52—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames
    • H01L23/522—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body
    • H01L23/5222—Capacitive arrangements or effects of, or between wiring layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/52—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames
    • H01L23/522—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body
    • H01L23/532—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body characterised by the materials
    • H01L23/53204—Conductive materials
    • H01L23/53271—Conductive materials containing semiconductor material, e.g. polysilicon
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/52—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames
    • H01L23/522—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body
    • H01L23/532—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body characterised by the materials
    • H01L23/5329—Insulating materials
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
    • H01L27/08—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind
    • H01L27/0802—Resistors only
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01P—WAVEGUIDES; RESONATORS, LINES, OR OTHER DEVICES OF THE WAVEGUIDE TYPE
    • H01P3/00—Waveguides; Transmission lines of the waveguide type
    • H01P3/02—Waveguides; Transmission lines of the waveguide type with two longitudinal conductors
    • H01P3/08—Microstrips; Strip lines
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/30—Technical effects
    • H01L2924/301—Electrical effects
    • H01L2924/3011—Impedance

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Semiconductor Integrated Circuits (AREA)
AT9132000A 2000-05-24 2000-05-24 Integrierter schaltkreis mit leitung für hochfrequente signale AT409901B (de)

Priority Applications (1)

Application Number Priority Date Filing Date Title
AT9132000A AT409901B (de) 2000-05-24 2000-05-24 Integrierter schaltkreis mit leitung für hochfrequente signale

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
AT9132000A AT409901B (de) 2000-05-24 2000-05-24 Integrierter schaltkreis mit leitung für hochfrequente signale

Publications (2)

Publication Number Publication Date
ATA9132000A true ATA9132000A (de) 2002-04-15
AT409901B AT409901B (de) 2002-12-27

Family

ID=3682997

Family Applications (1)

Application Number Title Priority Date Filing Date
AT9132000A AT409901B (de) 2000-05-24 2000-05-24 Integrierter schaltkreis mit leitung für hochfrequente signale

Country Status (1)

Country Link
AT (1) AT409901B (de)

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3475700A (en) * 1966-12-30 1969-10-28 Texas Instruments Inc Monolithic microwave duplexer switch
DE3720298A1 (de) * 1987-06-19 1988-12-29 Asea Brown Boveri Metallschichtanordnung fuer duennschichthybridschaltungen
DE4115316A1 (de) * 1990-09-07 1992-03-12 Telefunken Systemtechnik Duennfilm-mehrlagenschaltung und verfahren zur herstellung von duennfilm-mehrlagenschaltungen
DE4219523A1 (de) * 1992-06-15 1993-12-16 Daimler Benz Ag Monolithisch integrierter Millimeterwellenschaltkreis und Verfahren zu dessen Herstellung
DE19806601A1 (de) * 1998-02-18 1998-08-06 Trenew Electronic Gmbh Hochgeschwindigkeits-Backplane

Also Published As

Publication number Publication date
AT409901B (de) 2002-12-27

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Legal Events

Date Code Title Description
ELJ Ceased due to non-payment of the annual fee