ATA594271A - Halbleitervorrichtung mit isolierzonen aus versenktem siliziumoxyd und mit einem transistor - Google Patents

Halbleitervorrichtung mit isolierzonen aus versenktem siliziumoxyd und mit einem transistor

Info

Publication number
ATA594271A
ATA594271A AT594271A AT594271A ATA594271A AT A594271 A ATA594271 A AT A594271A AT 594271 A AT594271 A AT 594271A AT 594271 A AT594271 A AT 594271A AT A594271 A ATA594271 A AT A594271A
Authority
AT
Austria
Prior art keywords
transistor
semi
conductor device
insulating zones
zones made
Prior art date
Application number
AT594271A
Other languages
English (en)
Other versions
AT339961B (de
Original Assignee
Philips Nv
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Philips Nv filed Critical Philips Nv
Publication of ATA594271A publication Critical patent/ATA594271A/de
Application granted granted Critical
Publication of AT339961B publication Critical patent/AT339961B/de

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W15/00—Highly-doped buried regions of integrated devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/60—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D10/00 or H10D18/00, e.g. integration of BJTs
    • H10D84/611—Combinations of BJTs and one or more of diodes, resistors or capacitors
    • H10D84/613—Combinations of vertical BJTs and one or more of diodes, resistors or capacitors
    • H10D84/615—Combinations of vertical BJTs and one or more of resistors or capacitors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W10/00—Isolation regions in semiconductor bodies between components of integrated devices
    • H10W10/01—Manufacture or treatment
    • H10W10/011—Manufacture or treatment of isolation regions comprising dielectric materials
    • H10W10/012—Manufacture or treatment of isolation regions comprising dielectric materials using local oxidation of silicon [LOCOS]
    • H10W10/0125—Manufacture or treatment of isolation regions comprising dielectric materials using local oxidation of silicon [LOCOS] comprising introducing electrical impurities in local oxidation regions, e.g. to alter LOCOS oxide growth characteristics
    • H10W10/0126—Manufacture or treatment of isolation regions comprising dielectric materials using local oxidation of silicon [LOCOS] comprising introducing electrical impurities in local oxidation regions, e.g. to alter LOCOS oxide growth characteristics introducing electrical active impurities in local oxidation regions to create channel stoppers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W10/00—Isolation regions in semiconductor bodies between components of integrated devices
    • H10W10/10—Isolation regions comprising dielectric materials
    • H10W10/13—Isolation regions comprising dielectric materials formed using local oxidation of silicon [LOCOS], e.g. sealed interface localised oxidation [SILO] or side-wall mask isolation [SWAMI]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W15/00—Highly-doped buried regions of integrated devices
    • H10W15/01—Manufacture or treatment
AT594271A 1970-09-10 1971-07-08 Halbleitervorrichtung mit isolierzonen aus versenktem siliziumoxyd und mit einem transistor AT339961B (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
NL7013365.A NL159819B (nl) 1970-09-10 1970-09-10 Halfgeleiderinrichting met een halfgeleiderlichaam, bevat- tende een transistor, waarbij een in het halfgeleiderli- chaam verzonken patroon van isolerend materiaal, dat door plaatselijke oxydatie van het halfgeleiderlichaam gevormd is, aanwezig is.

Publications (2)

Publication Number Publication Date
ATA594271A true ATA594271A (de) 1977-03-15
AT339961B AT339961B (de) 1977-11-25

Family

ID=19811004

Family Applications (1)

Application Number Title Priority Date Filing Date
AT594271A AT339961B (de) 1970-09-10 1971-07-08 Halbleitervorrichtung mit isolierzonen aus versenktem siliziumoxyd und mit einem transistor

Country Status (2)

Country Link
AT (1) AT339961B (de)
NL (1) NL159819B (de)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3648125A (en) * 1971-02-02 1972-03-07 Fairchild Camera Instr Co Method of fabricating integrated circuits with oxidized isolation and the resulting structure

Also Published As

Publication number Publication date
NL7013365A (de) 1972-03-14
AT339961B (de) 1977-11-25
NL159819B (nl) 1979-03-15

Similar Documents

Publication Publication Date Title
IT947946B (it) Dispositivo semiconduttore elettroluminescente
IT956672B (it) Dispositivo semiconduttore elettroluminescente
BE761239A (fr) Dispositifs semi-conducteurs integres
AR193866A1 (es) Dispositivo semiconductor y metodo para su fabricacion
BR7200629D0 (pt) Dispositivo do tipo engate e tiristor semicondutor integrado
IT947244B (it) Dispositivo semiconduttore
DE2255171B2 (de) Isolierschicht-feldeffekttransistor
CH505475A (de) Halbleitervorrichtung mit einem lateralen Transistor
IT975353B (it) Dispositivo semiconduttore
BR6677894D0 (pt) Dispositivo semicondutor
SE384599B (sv) Omkopplings- och lagrings-halvledaranordning
IT968105B (it) Procedimento e dispositivo di fabbricazione di cablaggi piatti e cablaggio piatto ottenuto
IT959277B (it) Dispositivo semiconduttore
AT339961B (de) Halbleitervorrichtung mit isolierzonen aus versenktem siliziumoxyd und mit einem transistor
IT952873B (it) Dispositivo semiconduttore
IT968868B (it) Dispoitivo semiconduttore
BR7100946D0 (pt) Dispositivo semicondutor e processo para sua fabricacao
AR192233A1 (es) Dispositivo semiconductor y metodo para fabricarlo
BR7202251D0 (pt) Dispositivo semicondutor e processo de fazer o mesmo
IT949161B (it) Dispositivo semiconduttore
CH517379A (de) Halbleitervorrichtung
CH502746A (de) Planare Halbleitervorrichtung und deren Verwendung
BE787044A (fr) Matieres semiconductrices et dispositifs fabriques avec celles-ci
AT345897B (de) Transistor aus indiumantimonid
CA848644A (en) Method of manufacturing a semiconductor device comprising a field-effect transistor and semi-conductor device manufactured by said method

Legal Events

Date Code Title Description
ELJ Ceased due to non-payment of the annual fee