AT60650B - Process for the production of refractory, electrically conductive moldings. - Google Patents
Process for the production of refractory, electrically conductive moldings.Info
- Publication number
- AT60650B AT60650B AT60650DA AT60650B AT 60650 B AT60650 B AT 60650B AT 60650D A AT60650D A AT 60650DA AT 60650 B AT60650 B AT 60650B
- Authority
- AT
- Austria
- Prior art keywords
- refractory
- electrically conductive
- production
- carbon
- moldings
- Prior art date
Links
- 238000000034 method Methods 0.000 title claims description 14
- 238000004519 manufacturing process Methods 0.000 title claims description 3
- 238000000465 moulding Methods 0.000 title description 5
- CURLTUGMZLYLDI-UHFFFAOYSA-N Carbon dioxide Chemical compound O=C=O CURLTUGMZLYLDI-UHFFFAOYSA-N 0.000 claims description 7
- 229910052799 carbon Inorganic materials 0.000 claims description 7
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims description 6
- 229910018540 Si C Inorganic materials 0.000 claims description 3
- 238000010438 heat treatment Methods 0.000 claims description 3
- 229910002092 carbon dioxide Inorganic materials 0.000 claims description 2
- 239000001569 carbon dioxide Substances 0.000 claims description 2
- 239000003245 coal Substances 0.000 claims description 2
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims 1
- 229910002090 carbon oxide Inorganic materials 0.000 claims 1
- 229910052760 oxygen Inorganic materials 0.000 claims 1
- 239000001301 oxygen Substances 0.000 claims 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
- 239000011230 binding agent Substances 0.000 description 2
- 238000001704 evaporation Methods 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- RSWGJHLUYNHPMX-UHFFFAOYSA-N Abietic-Saeure Natural products C12CCC(C(C)C)=CC2=CCC2C1(C)CCCC2(C)C(O)=O RSWGJHLUYNHPMX-UHFFFAOYSA-N 0.000 description 1
- KHPCPRHQVVSZAH-HUOMCSJISA-N Rosin Natural products O(C/C=C/c1ccccc1)[C@H]1[C@H](O)[C@@H](O)[C@@H](O)[C@@H](CO)O1 KHPCPRHQVVSZAH-HUOMCSJISA-N 0.000 description 1
- 239000004927 clay Substances 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 230000008020 evaporation Effects 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 239000012188 paraffin wax Substances 0.000 description 1
- KHPCPRHQVVSZAH-UHFFFAOYSA-N trans-cinnamyl beta-D-glucopyranoside Natural products OC1C(O)C(O)C(CO)OC1OCC=CC1=CC=CC=C1 KHPCPRHQVVSZAH-UHFFFAOYSA-N 0.000 description 1
Landscapes
- Ceramic Products (AREA)
- Silicon Compounds (AREA)
Description
<Desc/Clms Page number 1>
Verfahren zur Herstellung von feuerfesten, elektrisch leltenden Formkörpern.
EMI1.1
Mischung ein Bindemittel, z. B. Kolophonium oder Paraffin zum Plastischmachen beifügen kann und formt die ganze Masse. Diese wird dann in einer Atmosphäre von Kohlenoxyd oder Kohlensäure bei 00 bis 1500 C erhitzt.
Der Vorgang l rçt sich durch folgende Formel ausdrücken :
Si+CO+C=SiCO+C.
Im zweiten Teil des Verfahrens wird der so entstandene Formkörper bei 1600 bis 1700"C am besten in einem elektrischen Ofen erhitzt. Dabei verbindet sich der freie Kohlenstoff mit dem
EMI1.2
Die Menge des freien Kohlenstoffen, die sich nach dem ersten Teilverfahren neben dem Si CO in dem Formkörper befindet, kann man so bemessen, dass nach Erhitzung im zweiten Teilverfahren kein Kohleüberschuss und kein Si CO mehr verbleibt, sondern dass nur C Si entsteht.
Man kann aber auch mehr oder weniger freie Kohle im ersten Teilverfahren anwenden,
EMI1.3
das sich erst im zweiten Teilverfahren gebildet hat.
In ähnlicher Weise kann man im ersten Teilverfahren auch andere Massen zusetzen, beispielsweise Ton, der dann gleichzeitig als Bindemittel dient.
Charakteristisch für das erste Teilverfahren ist die Anwesenheit von freiem Kohlenstoff neben der Si CO-Verbindung. Würde das aus diesem Teil des Verfahrens hervorgehende Produkt keinen freien Kohlenstoff enthalten, so könnte man die Masse dieses Formkörpers zwar auch zu Si C reduzieren, das gelänge aber nur bei hohen Temperaturen, ungefähr bei 28000 C. Solche Verfahren sind bekannt. Die Reduktion gelingt aber nicht, ohne dass gleichzeitig ein beträchtlicher Teil des Siliziums verdampft. Abgesehen von den übrigen unvorteilhaften Eigenschaften des so erhaltenen Produktes können auf diese Weise brauchbare Formkörper überhaupt nicht hergestellt werden, weil sie durch das Verdampfen des Siliziums sowohl ihre Form wie ihre Festigkeit verändern.
Nach dem neuen Verfahren dagegen erhält man Formkörper aus Si C von technisch äusserst wertvollen Eigenschaften. Solche Formkörper haben eine sehr gleichmässige, etwas poröse Struktur und sind deshalb sehr unempfindlich gegen Temperaturveränderungen. Selbst ganz plötzliche und grosse Temperaturschwankungen haben keinen nachteiligen Einfluss auf sie. Obgleich diese Formkörper sehr hart sind, lassen sie sich leicht mechanisch bearbeiten ; man kann sie feilen, fntspu. schneiden, schleifen und dgl. Ein wesentlicher Vorzug ist ihre grosse Beständigkeit selbst bei Temperaturen bis zu 140cl.
EMI1.4
**WARNUNG** Ende DESC Feld kannt Anfang CLMS uberlappen**.
<Desc / Clms Page number 1>
Process for the production of refractory, electrically conductive moldings.
EMI1.1
Mixture a binder, e.g. B. can add rosin or paraffin to plasticize and form the whole mass. This is then heated in an atmosphere of carbon dioxide or carbonic acid at 00 to 1500 C.
The process can be expressed by the following formula:
Si + CO + C = SiCO + C.
In the second part of the process, the molded body produced in this way is best heated in an electric furnace at 1600 to 1700 "C. This combines the free carbon with the
EMI1.2
The amount of free carbons that is located next to the Si CO in the molded body after the first partial process can be measured so that after heating in the second partial process, there is no longer any excess carbon or Si CO, but only C Si.
But you can also use more or less free coal in the first partial process,
EMI1.3
which was only formed in the second part of the procedure.
In a similar way, you can also add other masses in the first partial process, for example clay, which then also serves as a binding agent.
The presence of free carbon in addition to the Si CO compound is characteristic of the first sub-process. If the product resulting from this part of the process did not contain any free carbon, the mass of this shaped body could also be reduced to Si C, but this would only work at high temperatures, around 28,000 C. Such processes are known. However, the reduction does not succeed without a considerable part of the silicon evaporating at the same time. Apart from the other disadvantageous properties of the product obtained in this way, usable moldings cannot be produced at all, because they change both their shape and their strength as a result of the evaporation of the silicon.
According to the new process, on the other hand, moldings made of Si C are obtained with technically extremely valuable properties. Such molded bodies have a very uniform, somewhat porous structure and are therefore very insensitive to temperature changes. Even very sudden and large temperature fluctuations have no negative influence on them. Although these moldings are very hard, they can easily be processed mechanically; you can file them, fntspu. cutting, grinding and the like. A major advantage is their great resistance even at temperatures of up to 140cl.
EMI1.4
** WARNING ** End of DESC field may overlap beginning of CLMS **.
Claims (1)
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| AT53533D AT53533B (en) | 1909-10-04 | 1910-08-22 | Process for the production of refractory, electrically conductive bodies. |
| DE60650X | 1911-07-20 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| AT60650B true AT60650B (en) | 1913-08-11 |
Family
ID=25602102
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| AT60650D AT60650B (en) | 1910-08-22 | 1912-07-05 | Process for the production of refractory, electrically conductive moldings. |
Country Status (1)
| Country | Link |
|---|---|
| AT (1) | AT60650B (en) |
-
1912
- 1912-07-05 AT AT60650D patent/AT60650B/en active
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