AT53533B - Process for the production of refractory, electrically conductive bodies. - Google Patents
Process for the production of refractory, electrically conductive bodies.Info
- Publication number
- AT53533B AT53533B AT53533DA AT53533B AT 53533 B AT53533 B AT 53533B AT 53533D A AT53533D A AT 53533DA AT 53533 B AT53533 B AT 53533B
- Authority
- AT
- Austria
- Prior art keywords
- silicon
- refractory
- production
- electrically conductive
- mass
- Prior art date
Links
- 238000000034 method Methods 0.000 title claims description 7
- 238000004519 manufacturing process Methods 0.000 title claims description 5
- CURLTUGMZLYLDI-UHFFFAOYSA-N Carbon dioxide Chemical compound O=C=O CURLTUGMZLYLDI-UHFFFAOYSA-N 0.000 claims description 16
- 229910052710 silicon Inorganic materials 0.000 claims description 14
- 239000010703 silicon Substances 0.000 claims description 14
- 239000012298 atmosphere Substances 0.000 claims description 2
- 229910002092 carbon dioxide Inorganic materials 0.000 claims description 2
- 239000001569 carbon dioxide Substances 0.000 claims description 2
- 239000000126 substance Substances 0.000 claims 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 13
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 8
- 150000001875 compounds Chemical class 0.000 description 6
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 4
- 229910052799 carbon Inorganic materials 0.000 description 4
- 239000000203 mixture Substances 0.000 description 4
- 229910052757 nitrogen Inorganic materials 0.000 description 4
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 3
- 239000011230 binding agent Substances 0.000 description 3
- 229910002090 carbon oxide Inorganic materials 0.000 description 3
- 229910052760 oxygen Inorganic materials 0.000 description 3
- 239000001301 oxygen Substances 0.000 description 3
- 239000004927 clay Substances 0.000 description 2
- 238000010438 heat treatment Methods 0.000 description 2
- 238000000465 moulding Methods 0.000 description 2
- RSWGJHLUYNHPMX-UHFFFAOYSA-N Abietic-Saeure Natural products C12CCC(C(C)C)=CC2=CCC2C1(C)CCCC2(C)C(O)=O RSWGJHLUYNHPMX-UHFFFAOYSA-N 0.000 description 1
- KHPCPRHQVVSZAH-HUOMCSJISA-N Rosin Natural products O(C/C=C/c1ccccc1)[C@H]1[C@H](O)[C@@H](O)[C@@H](O)[C@@H](CO)O1 KHPCPRHQVVSZAH-HUOMCSJISA-N 0.000 description 1
- 239000003245 coal Substances 0.000 description 1
- 238000011835 investigation Methods 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 239000012299 nitrogen atmosphere Substances 0.000 description 1
- 239000012188 paraffin wax Substances 0.000 description 1
- 238000003825 pressing Methods 0.000 description 1
- RMAQACBXLXPBSY-UHFFFAOYSA-N silicic acid Chemical compound O[Si](O)(O)O RMAQACBXLXPBSY-UHFFFAOYSA-N 0.000 description 1
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 1
- 229910010271 silicon carbide Inorganic materials 0.000 description 1
- 235000012239 silicon dioxide Nutrition 0.000 description 1
- 239000011856 silicon-based particle Substances 0.000 description 1
- KHPCPRHQVVSZAH-UHFFFAOYSA-N trans-cinnamyl beta-D-glucopyranoside Natural products OC1C(O)C(O)C(CO)OC1OCC=CC1=CC=CC=C1 KHPCPRHQVVSZAH-UHFFFAOYSA-N 0.000 description 1
Landscapes
- Silicon Compounds (AREA)
- Compositions Of Oxide Ceramics (AREA)
Description
<Desc/Clms Page number 1>
Verfahren zur Herstellung von feuerfesten, elektrisch leitenden Körpern.
Gemäss vorliegender Erfindung werden feuerfeste Körper, die in der Kälte elektrische Leitungsfähigkeit besitzen und als Leit-oder Widerstandskörper, Heizkörper und dgl. für elektrische Zwecke benutzt werden können und ausserdem wegen ihrer hohen spezifischen Widerstandsfähigkeit und Feuerfestigkeit und Härte für Tiegel, Schleifsteine und viele ähnliche Zwecke verwendet werden können, dadurch hergestellt, dass zur Bindung der Masse eine aus Silizium, Kohlenstoff und Sauerstoff bestehende Verbindung verwendet wird.
Die Herstellung kann beispielsweise in der Art erfolgen, dass der zu bindenden Masse Silizium beigemengt wird und die Masse alsdann nach einem der bekannten Formverfahren geformt und hierauf in einer Atmosphäre von Kohlenoxyd oder Kohlensäure stark-vor- teilhaft bis zur Weissglut-erhitzt wird, derart, dass die Masse Kohle und Sauerstoff aufnimmt. Es bildet sich hiebei eine an sich bekannte Verbindung von der Zusammensetzung Si CO, die ausserordentliche Härte, Festigkeit und gute Leitfähigkeit besitzt.
Das Formen der Masse geschieht beispielsweise durch einfaches Pressen der pulverisierten Masse in eine geeignete Form, wobei der Masse irgend ein Bindemittel, beispielsweise etwas Kolophonium oder Paraffin oder Ton oder ein anderes geeignetes Bindemittel zugesetzt wird.
Die fertige Masse hat nach der Aufnahme des Koh1enoxyds in vielfacher Beziehung ähnliche Eigenschaften wie die bisher bekannte Silitmasse, die aus Kohlenstoff, Silizium und Stickstoff besteht und in analoger Weise gewonnen wird, indem Silizium im Beisein \on Kohienston durch Erhitzen in einer Stickstoffatmosphäre zur Bindung verwendet wird.
Es kann auch bei dem vorliegenden Verfahren statt der Kohlensäure und des Kohlenoxyds ein Gemenge von Kohlensäure und Kohlenoxyd oder beider mit Stickstoff angewendet werden. Es muss dann aber dafür Sorge getragen werden, dass der Stickstoff nicht in zu grosser Menge vorhanden ist, da sonst das Silizium nicht mehr Kohlenoxyd, sondern in der
Hauptsache nur Stickstoff aufnehmen würde.
A) s Grundmasse für die Herstellung der feuerfesten Körper kann irgend ein beliebiger geeigneter Stoff verwendet werden, beispielsweise Siliziumkarbid oder Ton oder dgl. Es kann aber auch derart verfahren werden, dass die Verbindung von Silizium mit Kohlen- o\yd. 'H) st gleichzeitig Grundmassp und Bindemittel ist, indem die ganze Masse Binde- nnttcl ist. Es wtrd dann derart verfahren, dass fein pulverisiertes Silizium geformt und
EMI1.1
wird.
Nimmt man statt fein pulverisiertes Silizium biebei grobkörniges Silizium, so kann man durch geeignete Vorsichtsmassregeln es dahin bringen, dass die einzelnen Siliziumteilchen nur an ihrer Oberfläche in die chemische Verbindung mit Kohlenoxyd übergeführt werden und im Innern noch unverändertes Silizium übrig bleibt.
Verwendet man statt Kohlenoxyd Kohlensäure, so bildet sich ausser der chemischen Verbindung des Siliziums mit Kohlenoxyd noch etwas Kieselsäure, die bei sehr starker Erhitzung ganz oder teilweise verflüchtigt wird und bei geringerer Erhitzung in der Masse zurückbleibt.
Es ist möglich, dass neben oder an Stelle der Verbindung von der Zusammensetzung Si ('0 sich auch andere ähnliche Verbindungen von Silizium, Kohlenstoff und Sauerstoff bilden. Die bisherige Untersuchung ergab allerdings stets eine Zusammensetzung, die sehr annähernd der Formel Si CO entspricht.
**WARNUNG** Ende DESC Feld kannt Anfang CLMS uberlappen**.
<Desc / Clms Page number 1>
Process for the production of refractory, electrically conductive bodies.
According to the present invention, refractory bodies that have electrical conductivity in the cold and can be used as conductive or resistance bodies, heating elements and the like for electrical purposes and, because of their high specific resistance and fire resistance and hardness, for crucibles, grinding stones and many similar purposes can be used, produced in that a compound consisting of silicon, carbon and oxygen is used to bind the mass.
The production can take place, for example, in such a way that silicon is added to the mass to be bonded and the mass is then shaped according to one of the known molding processes and then heated in an atmosphere of carbon dioxide or carbonic acid, which is advantageous to white heat, in such a way, that the mass absorbs coal and oxygen. A compound of the composition Si CO, which is known per se and has extraordinary hardness, strength and good conductivity, is formed.
The molding of the mass is done, for example, by simply pressing the pulverized mass into a suitable shape, some binding agent, for example some rosin or paraffin or clay or another suitable binding agent being added to the mass.
After taking up the carbon oxide, the finished mass has in many ways similar properties to the previously known silicon mass, which consists of carbon, silicon and nitrogen and is obtained in an analogous manner by using silicon in the presence of Kohienston for binding by heating in a nitrogen atmosphere becomes.
In the present method, instead of carbonic acid and carbonic oxide, a mixture of carbonic acid and carbonic oxide or both with nitrogen can be used. However, care must then be taken that the nitrogen is not present in too large an amount, otherwise the silicon is no longer in the carbon oxide, but in the
The main thing is that it only absorbs nitrogen.
Any suitable material can be used for the production of the refractory body, for example silicon carbide or clay or the like. However, the procedure can also be such that the connection of silicon with carbon or the like can be used. 'H) is at the same time basic mass and binding agent, in that the whole mass is binding. The procedure is then such that finely powdered silicon is formed and
EMI1.1
becomes.
If you take coarse-grained silicon instead of finely powdered silicon, you can take appropriate precautionary measures to ensure that the individual silicon particles are only converted into the chemical compound with carbon oxide on their surface and that unchanged silicon remains inside.
If carbonic acid is used instead of carbonic acid, besides the chemical compound of silicon with carbonic oxide, some silicic acid is also formed, which is completely or partially volatilized when heated very strongly and remains in the mass when heated less.
It is possible that, in addition to or instead of the compound with the composition Si ('0, other similar compounds of silicon, carbon and oxygen are also formed. The previous investigation, however, always resulted in a composition that very approximately corresponds to the formula Si CO.
** WARNING ** End of DESC field may overlap beginning of CLMS **.
Claims (1)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| AT60650D AT60650B (en) | 1910-08-22 | 1912-07-05 | Process for the production of refractory, electrically conductive moldings. |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| DE53533X | 1909-10-04 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| AT53533B true AT53533B (en) | 1912-05-10 |
Family
ID=5627688
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| AT53533D AT53533B (en) | 1909-10-04 | 1910-08-22 | Process for the production of refractory, electrically conductive bodies. |
Country Status (1)
| Country | Link |
|---|---|
| AT (1) | AT53533B (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US2784112A (en) * | 1952-05-17 | 1957-03-05 | Carborundum Co | Method of making silicon carbidebonded refractory bodies and coated metal articles |
-
1910
- 1910-08-22 AT AT53533D patent/AT53533B/en active
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US2784112A (en) * | 1952-05-17 | 1957-03-05 | Carborundum Co | Method of making silicon carbidebonded refractory bodies and coated metal articles |
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