AT373565B - Verfahren zur herstellung von luftbestaendigem, kristallinen lithiumnitrid - Google Patents

Verfahren zur herstellung von luftbestaendigem, kristallinen lithiumnitrid

Info

Publication number
AT373565B
AT373565B AT0801178A AT801178A AT373565B AT 373565 B AT373565 B AT 373565B AT 0801178 A AT0801178 A AT 0801178A AT 801178 A AT801178 A AT 801178A AT 373565 B AT373565 B AT 373565B
Authority
AT
Austria
Prior art keywords
lithium nitride
producing air
crystalline lithium
air resistant
resistant crystalline
Prior art date
Application number
AT0801178A
Other languages
English (en)
Other versions
ATA801178A (de
Original Assignee
Max Planck Gesellschaft
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Max Planck Gesellschaft filed Critical Max Planck Gesellschaft
Publication of ATA801178A publication Critical patent/ATA801178A/de
Application granted granted Critical
Publication of AT373565B publication Critical patent/AT373565B/de

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
    • C01B21/00—Nitrogen; Compounds thereof
    • C01B21/06—Binary compounds of nitrogen with metals, with silicon, or with boron, or with carbon, i.e. nitrides; Compounds of nitrogen with more than one metal, silicon or boron
    • C01B21/0607—Binary compounds of nitrogen with metals, with silicon, or with boron, or with carbon, i.e. nitrides; Compounds of nitrogen with more than one metal, silicon or boron with alkali metals
    • C01B21/061—Binary compounds of nitrogen with metals, with silicon, or with boron, or with carbon, i.e. nitrides; Compounds of nitrogen with more than one metal, silicon or boron with alkali metals with lithium
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01M—PROCESSES OR MEANS, e.g. BATTERIES, FOR THE DIRECT CONVERSION OF CHEMICAL ENERGY INTO ELECTRICAL ENERGY
    • H01M6/00—Primary cells; Manufacture thereof
    • H01M6/14—Cells with non-aqueous electrolyte
    • H01M6/18—Cells with non-aqueous electrolyte with solid electrolyte
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01P—INDEXING SCHEME RELATING TO STRUCTURAL AND PHYSICAL ASPECTS OF SOLID INORGANIC COMPOUNDS
    • C01P2002/00—Crystal-structural characteristics
    • C01P2002/70—Crystal-structural characteristics defined by measured X-ray, neutron or electron diffraction data
    • C01P2002/78—Crystal-structural characteristics defined by measured X-ray, neutron or electron diffraction data by stacking-plane distances or stacking sequences
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01P—INDEXING SCHEME RELATING TO STRUCTURAL AND PHYSICAL ASPECTS OF SOLID INORGANIC COMPOUNDS
    • C01P2006/00—Physical properties of inorganic compounds
    • C01P2006/80—Compositional purity
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
    • Y10S117/90—Apparatus characterized by composition or treatment thereof, e.g. surface finish, surface coating

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Organic Chemistry (AREA)
  • Electrochemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Materials Engineering (AREA)
  • Inorganic Chemistry (AREA)
  • Manufacturing & Machinery (AREA)
  • Conductive Materials (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Primary Cells (AREA)
  • Secondary Cells (AREA)
  • Investigating Or Analyzing Materials By The Use Of Fluid Adsorption Or Reactions (AREA)
  • Ceramic Products (AREA)
  • Hybrid Cells (AREA)
AT0801178A 1977-11-11 1978-11-09 Verfahren zur herstellung von luftbestaendigem, kristallinen lithiumnitrid AT373565B (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DE19772750607 DE2750607A1 (de) 1977-11-11 1977-11-11 Luftbestaendiges kristallines lithiumnitrid, verfahren zu seiner herstellung und seine verwendung

Publications (2)

Publication Number Publication Date
ATA801178A ATA801178A (de) 1983-06-15
AT373565B true AT373565B (de) 1984-02-10

Family

ID=6023580

Family Applications (1)

Application Number Title Priority Date Filing Date
AT0801178A AT373565B (de) 1977-11-11 1978-11-09 Verfahren zur herstellung von luftbestaendigem, kristallinen lithiumnitrid

Country Status (15)

Country Link
US (1) US4234554A (de)
JP (2) JPS599482B2 (de)
AT (1) AT373565B (de)
BR (1) BR7807414A (de)
CA (1) CA1119381A (de)
DE (1) DE2750607A1 (de)
DK (1) DK501578A (de)
ES (1) ES474886A1 (de)
FI (1) FI783436A7 (de)
FR (1) FR2408548A1 (de)
GB (1) GB2010233B (de)
IT (1) IT1100484B (de)
NL (1) NL7811160A (de)
NO (1) NO783784L (de)
SE (1) SE7811578L (de)

Families Citing this family (34)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2429263A1 (fr) * 1978-06-20 1980-01-18 Ebauches Sa Procede de fabrication, par frittage, de nitrure de lithium a structure polycristalline compacte, et applications de cette substance
DE2925383A1 (de) * 1978-06-29 1980-01-03 Ebauches Sa Elektrochemische energiequelle
DE2918940C2 (de) * 1979-05-10 1984-08-09 Max Planck Gesellschaft zur Förderung der Wissenschaften e.V., 3400 Göttingen Festes Ionenleitermaterial, seine Verwendung und Verfahren zu seiner Herstellung
DE3039900C2 (de) * 1979-10-29 1983-11-03 Hitachi, Ltd., Tokyo Trockenelektrolyt
JPS5790865A (en) * 1980-11-26 1982-06-05 Toshiba Corp Solid lithium battery
DE3123094A1 (de) * 1981-06-11 1983-01-05 Varta Batterie Ag, 3000 Hannover Verfahren zur herstellung von keramischem lithiumnitrid
FR2513817B1 (fr) * 1981-09-30 1987-02-06 Europ Agence Spatiale Perfectionnements apportes aux piles et batteries
US4460660A (en) * 1982-12-22 1984-07-17 Rca Corporation Negative hydrogen electrode comprising an alloy palladium and rutherium
US5094991A (en) * 1983-08-29 1992-03-10 Chevron Research Company Slurry catalyst for hydroprocessing heavy and refractory oils
DE19955280C1 (de) * 1999-11-17 2001-06-28 Univ Berlin Tech Kontaktstruktur für ein elektrisch betriebenes II/VI-Halbleiterbauelement und Verfahren zu deren Herstellung
US7211146B2 (en) * 2001-09-21 2007-05-01 Crystal Is, Inc. Powder metallurgy crucible for aluminum nitride crystal growth
TW573086B (en) * 2001-09-21 2004-01-21 Crystal Is Inc Powder metallurgy tungsten crucible for aluminum nitride crystal growth
US20060005763A1 (en) * 2001-12-24 2006-01-12 Crystal Is, Inc. Method and apparatus for producing large, single-crystals of aluminum nitride
US7638346B2 (en) 2001-12-24 2009-12-29 Crystal Is, Inc. Nitride semiconductor heterostructures and related methods
US8545629B2 (en) 2001-12-24 2013-10-01 Crystal Is, Inc. Method and apparatus for producing large, single-crystals of aluminum nitride
GB0229662D0 (en) * 2002-12-20 2003-01-29 Univ Nottingham Nanostructures
US7250146B2 (en) * 2004-02-13 2007-07-31 The Research Foundation Of State University Of New York Method for producing a reversible hydrogen storage medium with high storage capacity and ultrafast kinetics
US20070148076A1 (en) * 2005-02-14 2007-06-28 Yun Hang Hu Method for producing a reversible hydrogen storage medium with high storage capacity and ultrafast kinetics
CN101415864B (zh) 2005-11-28 2014-01-08 晶体公司 具有减少缺陷的大的氮化铝晶体及其制造方法
JP5281408B2 (ja) 2005-12-02 2013-09-04 クリスタル・イズ，インコーポレイテッド ドープされた窒化アルミニウム結晶及びそれを製造する方法
US8012257B2 (en) 2006-03-30 2011-09-06 Crystal Is, Inc. Methods for controllable doping of aluminum nitride bulk crystals
US9034103B2 (en) 2006-03-30 2015-05-19 Crystal Is, Inc. Aluminum nitride bulk crystals having high transparency to ultraviolet light and methods of forming them
WO2008088838A1 (en) 2007-01-17 2008-07-24 Crystal Is, Inc. Defect reduction in seeded aluminum nitride crystal growth
US9771666B2 (en) 2007-01-17 2017-09-26 Crystal Is, Inc. Defect reduction in seeded aluminum nitride crystal growth
JP5730484B2 (ja) 2007-01-26 2015-06-10 クリスタル アイエス インコーポレイテッド 厚みのある擬似格子整合型の窒化物エピタキシャル層
US8080833B2 (en) 2007-01-26 2011-12-20 Crystal Is, Inc. Thick pseudomorphic nitride epitaxial layers
US8088220B2 (en) * 2007-05-24 2012-01-03 Crystal Is, Inc. Deep-eutectic melt growth of nitride crystals
US9093707B2 (en) * 2007-06-11 2015-07-28 Alliance For Sustainable Energy, Llc MultiLayer solid electrolyte for lithium thin film batteries
JP2009173489A (ja) * 2008-01-24 2009-08-06 Showa Denko Kk 窒化物の製造方法
JP5806734B2 (ja) 2010-06-30 2015-11-10 クリスタル アイエス, インコーポレーテッドCrystal Is, Inc. 熱勾配制御による窒化アルミニウム大単結晶成長
US8962359B2 (en) 2011-07-19 2015-02-24 Crystal Is, Inc. Photon extraction from nitride ultraviolet light-emitting devices
JP6275817B2 (ja) 2013-03-15 2018-02-07 クリスタル アイエス, インコーポレーテッドCrystal Is, Inc. 仮像電子及び光学電子装置に対する平面コンタクト
JP7237148B2 (ja) * 2019-03-29 2023-03-10 古河機械金属株式会社 硫化物系無機固体電解質材料用の窒化リチウム組成物の製造方法および硫化物系無機固体電解質材料の製造方法
FR3165292A1 (fr) 2024-08-01 2026-02-06 Stellantis Auto Sas Dispositif de fixation d’un accessoire d’habitacle.

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US2910347A (en) * 1956-07-06 1959-10-27 Lithium Corp Preparation of lithium nitride
US2866685A (en) * 1956-10-22 1958-12-30 American Potash & Chem Corp Preparation of lithium nitride

Also Published As

Publication number Publication date
US4234554A (en) 1980-11-18
NO783784L (no) 1979-05-14
GB2010233B (en) 1982-09-02
NL7811160A (nl) 1979-05-15
DE2750607A1 (de) 1979-05-17
JPS5469600A (en) 1979-06-04
BR7807414A (pt) 1979-07-24
GB2010233A (en) 1979-06-27
JPS599482B2 (ja) 1984-03-02
FR2408548B1 (de) 1982-12-31
JPS57136703A (en) 1982-08-23
ES474886A1 (es) 1979-10-16
ATA801178A (de) 1983-06-15
FR2408548A1 (fr) 1979-06-08
IT1100484B (it) 1985-09-28
SE7811578L (sv) 1979-05-12
FI783436A7 (fi) 1979-05-12
DK501578A (da) 1979-05-12
IT7829634A0 (it) 1978-11-09
CA1119381A (en) 1982-03-09

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