AT328509B - Anordnung zum eindiffundieren von dotierungsstoffen in ein halbleitermaterial - Google Patents

Anordnung zum eindiffundieren von dotierungsstoffen in ein halbleitermaterial

Info

Publication number
AT328509B
AT328509B AT583270A AT583270A AT328509B AT 328509 B AT328509 B AT 328509B AT 583270 A AT583270 A AT 583270A AT 583270 A AT583270 A AT 583270A AT 328509 B AT328509 B AT 328509B
Authority
AT
Austria
Prior art keywords
dopening
diffusing
substances
arrangement
semiconductor material
Prior art date
Application number
AT583270A
Other languages
English (en)
Other versions
ATA583270A (de
Original Assignee
Siemens Ag
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Siemens Ag filed Critical Siemens Ag
Publication of ATA583270A publication Critical patent/ATA583270A/de
Application granted granted Critical
Publication of AT328509B publication Critical patent/AT328509B/de

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B31/00—Diffusion or doping processes for single crystals or homogeneous polycrystalline material with defined structure; Apparatus therefor
    • C30B31/06—Diffusion or doping processes for single crystals or homogeneous polycrystalline material with defined structure; Apparatus therefor by contacting with diffusion material in the gaseous state
    • C30B31/10—Reaction chambers; Selection of materials therefor
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B31/00—Diffusion or doping processes for single crystals or homogeneous polycrystalline material with defined structure; Apparatus therefor
    • C30B31/06—Diffusion or doping processes for single crystals or homogeneous polycrystalline material with defined structure; Apparatus therefor by contacting with diffusion material in the gaseous state
    • C30B31/12—Heating of the reaction chamber

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Mechanical Engineering (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
AT583270A 1969-06-30 1970-06-29 Anordnung zum eindiffundieren von dotierungsstoffen in ein halbleitermaterial AT328509B (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DE19691933128 DE1933128C3 (de) 1969-06-30 1969-06-30 Rohr zum Eindiffundieren von Dotierungsstoffen in Halbleiterkörper

Publications (2)

Publication Number Publication Date
ATA583270A ATA583270A (de) 1975-06-15
AT328509B true AT328509B (de) 1976-03-25

Family

ID=5738424

Family Applications (1)

Application Number Title Priority Date Filing Date
AT583270A AT328509B (de) 1969-06-30 1970-06-29 Anordnung zum eindiffundieren von dotierungsstoffen in ein halbleitermaterial

Country Status (8)

Country Link
JP (1) JPS4823710B1 (de)
AT (1) AT328509B (de)
CH (1) CH518622A (de)
DE (1) DE1933128C3 (de)
FR (1) FR2051429A5 (de)
GB (1) GB1282363A (de)
NL (1) NL165795C (de)
SE (1) SE358667B (de)

Families Citing this family (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB2126417A (en) * 1982-08-26 1984-03-21 Heraeus Schott Quarzschmelze Support systems for conveying semiconductor devices into hostile environments during manufacture
GB2135115A (en) * 1983-02-09 1984-08-22 Heraeus Schott Quarzschmelze Improvements in or relating to support systems
US4577650A (en) * 1984-05-21 1986-03-25 Mcconnell Christopher F Vessel and system for treating wafers with fluids
US4740249A (en) * 1984-05-21 1988-04-26 Christopher F. McConnell Method of treating wafers with fluid
US4738272A (en) * 1984-05-21 1988-04-19 Mcconnell Christopher F Vessel and system for treating wafers with fluids
US4633893A (en) * 1984-05-21 1987-01-06 Cfm Technologies Limited Partnership Apparatus for treating semiconductor wafers
US4856544A (en) * 1984-05-21 1989-08-15 Cfm Technologies, Inc. Vessel and system for treating wafers with fluids
US6136724A (en) * 1997-02-18 2000-10-24 Scp Global Technologies Multiple stage wet processing chamber

Also Published As

Publication number Publication date
SE358667B (de) 1973-08-06
GB1282363A (en) 1972-07-19
FR2051429A5 (de) 1971-04-02
JPS4823710B1 (de) 1973-07-16
DE1933128A1 (de) 1971-01-21
NL165795B (nl) 1980-12-15
NL165795C (nl) 1981-05-15
DE1933128B2 (de) 1977-12-08
CH518622A (de) 1972-01-31
NL7007490A (de) 1971-01-04
DE1933128C3 (de) 1978-08-10
ATA583270A (de) 1975-06-15

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Legal Events

Date Code Title Description
ELJ Ceased due to non-payment of the annual fee