AT274144B - Steuerbare Halbleiter-Gleichrichtervorrichtung - Google Patents

Steuerbare Halbleiter-Gleichrichtervorrichtung

Info

Publication number
AT274144B
AT274144B AT354167A AT354167A AT274144B AT 274144 B AT274144 B AT 274144B AT 354167 A AT354167 A AT 354167A AT 354167 A AT354167 A AT 354167A AT 274144 B AT274144 B AT 274144B
Authority
AT
Austria
Prior art keywords
rectifier device
controllable semiconductor
semiconductor rectifier
controllable
semiconductor
Prior art date
Application number
AT354167A
Other languages
English (en)
Original Assignee
Westinghouse Brake & Signal
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Westinghouse Brake & Signal filed Critical Westinghouse Brake & Signal
Application granted granted Critical
Publication of AT274144B publication Critical patent/AT274144B/de

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/40Electrodes ; Multistep manufacturing processes therefor
    • H01L29/41Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions
    • H01L29/423Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions not carrying the current to be rectified, amplified or switched
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/06Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/70Bipolar devices
    • H01L29/74Thyristor-type devices, e.g. having four-zone regenerative action

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Thyristors (AREA)
  • Electrodes Of Semiconductors (AREA)
AT354167A 1966-04-15 1967-04-14 Steuerbare Halbleiter-Gleichrichtervorrichtung AT274144B (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
GB1657666A GB1107899A (en) 1966-04-15 1966-04-15 Semiconductor controllable rectifier devices

Publications (1)

Publication Number Publication Date
AT274144B true AT274144B (de) 1969-09-10

Family

ID=10079803

Family Applications (1)

Application Number Title Priority Date Filing Date
AT354167A AT274144B (de) 1966-04-15 1967-04-14 Steuerbare Halbleiter-Gleichrichtervorrichtung

Country Status (5)

Country Link
AT (1) AT274144B (de)
DE (1) DE1639020A1 (de)
GB (1) GB1107899A (de)
NL (1) NL6704873A (de)
SE (1) SE325961B (de)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4087834A (en) * 1976-03-22 1978-05-02 General Electric Company Self-protecting semiconductor device

Also Published As

Publication number Publication date
NL6704873A (de) 1967-10-16
DE1639020A1 (de) 1970-05-27
GB1107899A (en) 1968-03-27
SE325961B (de) 1970-07-13

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