AT259626B - Process for the production of pure surface semiconductor bodies - Google Patents

Process for the production of pure surface semiconductor bodies

Info

Publication number
AT259626B
AT259626B AT571864A AT571864A AT259626B AT 259626 B AT259626 B AT 259626B AT 571864 A AT571864 A AT 571864A AT 571864 A AT571864 A AT 571864A AT 259626 B AT259626 B AT 259626B
Authority
AT
Austria
Prior art keywords
production
semiconductor bodies
surface semiconductor
pure surface
pure
Prior art date
Application number
AT571864A
Other languages
German (de)
Original Assignee
Siemens Ag
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Siemens Ag filed Critical Siemens Ag
Application granted granted Critical
Publication of AT259626B publication Critical patent/AT259626B/en

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/02—Elements
    • C30B29/06—Silicon
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C30B25/02—Epitaxial-layer growth
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
    • H01L21/3065—Plasma etching; Reactive-ion etching
AT571864A 1963-07-17 1964-07-03 Process for the production of pure surface semiconductor bodies AT259626B (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DE1963S0086211 DE1521956C2 (en) 1963-07-17 1963-07-17 Process for producing clean surfaces of semiconductor bodies with the aid of a gas mixture containing hydrogen halide

Publications (1)

Publication Number Publication Date
AT259626B true AT259626B (en) 1968-01-25

Family

ID=7512852

Family Applications (1)

Application Number Title Priority Date Filing Date
AT571864A AT259626B (en) 1963-07-17 1964-07-03 Process for the production of pure surface semiconductor bodies

Country Status (2)

Country Link
AT (1) AT259626B (en)
DE (1) DE1521956C2 (en)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE102005032737A1 (en) * 2005-07-08 2007-01-11 Infineon Technologies Ag Dry-etching silicon-containing substrates, especially wafers for semiconductor elements, contains silicon component, e.g. silane, to form side-wall passivation layer

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE966879C (en) * 1953-02-21 1957-09-12 Standard Elektrik Ag Process for cleaning and / or removal of semiconductor material, in particular germanium and silicon substances

Also Published As

Publication number Publication date
DE1521956B1 (en) 1970-01-15
DE1521956C2 (en) 1970-09-17

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