AT255485B - Verfahren zum Ziehen von flachen Dendriten - Google Patents

Verfahren zum Ziehen von flachen Dendriten

Info

Publication number
AT255485B
AT255485B AT257865A AT257865A AT255485B AT 255485 B AT255485 B AT 255485B AT 257865 A AT257865 A AT 257865A AT 257865 A AT257865 A AT 257865A AT 255485 B AT255485 B AT 255485B
Authority
AT
Austria
Prior art keywords
dendrites
pulling flat
pulling
flat
flat dendrites
Prior art date
Application number
AT257865A
Other languages
English (en)
Original Assignee
Westinghouse Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Westinghouse Electric Corp filed Critical Westinghouse Electric Corp
Application granted granted Critical
Publication of AT255485B publication Critical patent/AT255485B/de

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
    • C30B15/20—Controlling or regulating
    • C30B15/22—Stabilisation or shape controlling of the molten zone near the pulled crystal; Controlling the section of the crystal
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
    • C30B15/14—Heating of the melt or the crystallised materials
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
    • C30B15/36—Single-crystal growth by pulling from a melt, e.g. Czochralski method characterised by the seed, e.g. its crystallographic orientation
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
    • Y10S117/901—Levitation, reduced gravity, microgravity, space
    • Y10S117/902—Specified orientation, shape, crystallography, or size of seed or substrate

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
AT257865A 1964-03-23 1965-03-22 Verfahren zum Ziehen von flachen Dendriten AT255485B (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US353709A US3298795A (en) 1964-03-23 1964-03-23 Process for controlling dendritic crystal growth

Publications (1)

Publication Number Publication Date
AT255485B true AT255485B (de) 1967-07-10

Family

ID=23390230

Family Applications (1)

Application Number Title Priority Date Filing Date
AT257865A AT255485B (de) 1964-03-23 1965-03-22 Verfahren zum Ziehen von flachen Dendriten

Country Status (3)

Country Link
US (1) US3298795A (de)
AT (1) AT255485B (de)
GB (1) GB1043867A (de)

Families Citing this family (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3527574A (en) * 1966-09-27 1970-09-08 Tyco Laboratories Inc Growth of sapphire filaments
US3798007A (en) * 1969-12-05 1974-03-19 Ibm Method and apparatus for producing large diameter monocrystals
US4238274A (en) * 1978-07-17 1980-12-09 Western Electric Company, Inc. Method for avoiding undesirable deposits in crystal growing operations
CA1169336A (en) * 1980-01-07 1984-06-19 Emanuel M. Sachs String stabilized ribbon growth method and apparatus
JPS5777038A (en) * 1980-10-28 1982-05-14 Asahi Glass Co Ltd Manufacture of crystallized glass from phosphate glass
SU1592414A1 (ru) * 1986-11-26 1990-09-15 Vni Pk T I Elektrotermicheskog Cпocoб bыpaщиbahия пpoфилиpobahhыx kpиctaллob tугoплabkиx coeдиhehий и уctpoйctbo для eгo ocущectbлehия
US4971650A (en) * 1989-09-22 1990-11-20 Westinghouse Electric Corp. Method of inhibiting dislocation generation in silicon dendritic webs
AU2003284253A1 (en) * 2002-10-18 2004-05-04 Evergreen Solar, Inc. Method and apparatus for crystal growth
US6814802B2 (en) * 2002-10-30 2004-11-09 Evergreen Solar, Inc. Method and apparatus for growing multiple crystalline ribbons from a single crucible

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CA650166A (en) * 1962-10-09 J. Smith Walter Method for controlling the thickness of a dendrite during growth

Also Published As

Publication number Publication date
GB1043867A (en) 1966-09-28
US3298795A (en) 1967-01-17

Similar Documents

Publication Publication Date Title
CH439501A (de) Verfahren zum Kontaktieren von Halbleiteranordnungen
CH451191A (de) Verfahren zum kontinuierlichen Diazotieren von Aminen
CH485782A (de) Verfahren zur Emulsionspolymerisation
DE1668993B2 (de) Verfahren zur isolierung von alpha-glycolid
CH481706A (de) Verfahren zum Herstellen von Bohrern
AT304441B (de) Verfahren zum Stabilisieren von Wollprodukten
AT253569B (de) Vorrichtung zum Ziehen von Dendriten
CH482746A (de) Verfahren zum Stabilisieren von Polyolefinen
AT255485B (de) Verfahren zum Ziehen von flachen Dendriten
AT246940B (de) Verfahren zum Gießen von Formaten
CH490482A (de) Verfahren zum Desodorieren von Fetten
CH436103A (de) Verfahren zum Verpacken von Gegenständen
AT304764B (de) Verfahren zum Stabilisieren von Orgotein
CH522149A (de) Vorrichtung zum Ziehen von Kabeln
AT239776B (de) Verfahren zur Hydrodesalkylierung von Alkylaromaten
AT253153B (de) Verfahren zum Stranggießen von Hohlsträngen
AT266566B (de) Verfahren zum Gefrieren von Kartoffeln
AT266399B (de) Verfahren zum Herstellen von Wandausbrüchen
AT257021B (de) Verfahren zum Spalten von Emulsionen
AT265830B (de) Verfahren zum Panzern von Ventilkegeln
CH454066A (de) Verfahren zum Abbau von B-Glucanen
CH444393A (de) Verfahren zum Biegen von Flachglas
AT250980B (de) Verfahren zum Verdampfen von Harnstoff
CH432211A (de) Verfahren zum Sticken mit grosser Geschwindigkeit
CH464249A (de) Verfahren zum Herstellen von Kopien