AT253569B - Vorrichtung zum Ziehen von Dendriten - Google Patents

Vorrichtung zum Ziehen von Dendriten

Info

Publication number
AT253569B
AT253569B AT387365A AT387365A AT253569B AT 253569 B AT253569 B AT 253569B AT 387365 A AT387365 A AT 387365A AT 387365 A AT387365 A AT 387365A AT 253569 B AT253569 B AT 253569B
Authority
AT
Austria
Prior art keywords
dendrites
pulling
pulling dendrites
Prior art date
Application number
AT387365A
Other languages
English (en)
Original Assignee
Westinghouse Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Westinghouse Electric Corp filed Critical Westinghouse Electric Corp
Application granted granted Critical
Publication of AT253569B publication Critical patent/AT253569B/de

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
    • C30B15/14—Heating of the melt or the crystallised materials
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
    • Y10T117/10—Apparatus
    • Y10T117/1016—Apparatus with means for treating single-crystal [e.g., heat treating]
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
    • Y10T117/10—Apparatus
    • Y10T117/1024—Apparatus for crystallization from liquid or supercritical state
    • Y10T117/1032—Seed pulling
    • Y10T117/1068—Seed pulling including heating or cooling details [e.g., shield configuration]

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
AT387365A 1964-04-27 1965-04-27 Vorrichtung zum Ziehen von Dendriten AT253569B (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US362592A US3342559A (en) 1964-04-27 1964-04-27 Apparatus for producing dendrites

Publications (1)

Publication Number Publication Date
AT253569B true AT253569B (de) 1967-04-10

Family

ID=23426711

Family Applications (1)

Application Number Title Priority Date Filing Date
AT387365A AT253569B (de) 1964-04-27 1965-04-27 Vorrichtung zum Ziehen von Dendriten

Country Status (2)

Country Link
US (1) US3342559A (de)
AT (1) AT253569B (de)

Families Citing this family (21)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
BE676042A (de) * 1965-02-10 1966-06-16
US3511610A (en) * 1966-10-14 1970-05-12 Gen Motors Corp Silicon crystal growing
US3798007A (en) * 1969-12-05 1974-03-19 Ibm Method and apparatus for producing large diameter monocrystals
US4784715A (en) * 1975-07-09 1988-11-15 Milton Stoll Methods and apparatus for producing coherent or monolithic elements
US4116642A (en) * 1976-12-15 1978-09-26 Western Electric Company, Inc. Method and apparatus for avoiding undesirable deposits in crystal growing operations
US4158038A (en) * 1977-01-24 1979-06-12 Mobil Tyco Solar Energy Corporation Method and apparatus for reducing residual stresses in crystals
US4248645A (en) * 1978-09-05 1981-02-03 Mobil Tyco Solar Energy Corporation Method for reducing residual stresses in crystals
US4314128A (en) * 1980-01-28 1982-02-02 Photowatt International, Inc. Silicon growth technique and apparatus using controlled microwave heating
US4390505A (en) * 1981-03-30 1983-06-28 Mobil Solar Energy Corporation Crystal growth apparatus
JPS6163593A (ja) * 1984-09-05 1986-04-01 Toshiba Corp 化合物半導体単結晶の製造装置
AU590563B2 (en) 1985-05-16 1989-11-09 Konishiroku Photo Industry Co., Ltd. Method for color-developing a silver halide color photographic light-sensitive material
EP0204530B1 (de) 1985-05-31 1991-09-11 Konica Corporation Verfahren zur Herstellung eines direkt positiven Farbbildes
JPH0648378B2 (ja) 1985-06-14 1994-06-22 コニカ株式会社 ハロゲン化銀カラ−写真感光材料の処理方法
EP0252997B1 (de) 1986-01-23 1993-04-07 Fuji Photo Film Co., Ltd. Verfahren für farbbilder
SU1592414A1 (ru) * 1986-11-26 1990-09-15 Vni Pk T I Elektrotermicheskog Cпocoб bыpaщиbahия пpoфилиpobahhыx kpиctaллob tугoплabkиx coeдиhehий и уctpoйctbo для eгo ocущectbлehия
DE4022389C2 (de) * 1990-07-13 1995-06-08 Leybold Ag Schmelz- und Gießofen
WO1993000462A1 (fr) * 1991-06-24 1993-01-07 Komatsu Electronic Metals Co., Ltd. Dispositif de tirage d'un monocristal
US5363795A (en) * 1991-09-04 1994-11-15 Kawasaki Steel Corporation Czochralski crystal pulling process and an apparatus for carrying out the same
EP0530397A1 (de) * 1991-09-04 1993-03-10 Kawasaki Steel Corporation Verfahren und Vorrichtung den Kristallziehungsprozess nach dem Czochralski Verfahren
DE19622664A1 (de) * 1996-06-05 1997-12-11 Wacker Siltronic Halbleitermat Verfahren und Vorrichtung zur Herstellung von Einkristallen
JP5528396B2 (ja) * 2011-06-20 2014-06-25 新日鐵住金株式会社 溶液成長法によるＳｉＣ単結晶の製造装置、当該製造装置を用いたＳｉＣ単結晶の製造方法及び当該製造装置に用いられる坩堝

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3103455A (en) * 1963-09-10 N-type
US3173765A (en) * 1955-03-18 1965-03-16 Itt Method of making crystalline silicon semiconductor material
US2822308A (en) * 1955-03-29 1958-02-04 Gen Electric Semiconductor p-n junction units and method of making the same
US2979386A (en) * 1956-08-02 1961-04-11 Shockley William Crystal growing apparatus
US2879189A (en) * 1956-11-21 1959-03-24 Shockley William Method for growing junction semi-conductive devices
NL212548A (de) * 1956-11-28
US2890139A (en) * 1956-12-10 1959-06-09 Shockley William Semi-conductive material purification method and apparatus
BE631688A (de) * 1961-03-27 1900-01-01

Also Published As

Publication number Publication date
US3342559A (en) 1967-09-19

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