AR226245A1 - Una pelicula delgada mejorada,particularmente util en la formacion de capas de pelicula aislantes o semiconductoras y el metodo para su obtencion - Google Patents

Una pelicula delgada mejorada,particularmente util en la formacion de capas de pelicula aislantes o semiconductoras y el metodo para su obtencion

Info

Publication number
AR226245A1
AR226245A1 AR228741A AR22874182A AR226245A1 AR 226245 A1 AR226245 A1 AR 226245A1 AR 228741 A AR228741 A AR 228741A AR 22874182 A AR22874182 A AR 22874182A AR 226245 A1 AR226245 A1 AR 226245A1
Authority
AR
Argentina
Prior art keywords
insulating
obtaining
formation
particularly useful
thin film
Prior art date
Application number
AR228741A
Other languages
English (en)
Original Assignee
Monosolar Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Monosolar Inc filed Critical Monosolar Inc
Application granted granted Critical
Publication of AR226245A1 publication Critical patent/AR226245A1/es

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/18Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
    • H01L31/1828Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof the active layers comprising only AIIBVI compounds, e.g. CdS, ZnS, CdTe
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/18Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
    • H01L31/186Particular post-treatment for the devices, e.g. annealing, impurity gettering, short-circuit elimination, recrystallisation
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02EREDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00Energy generation through renewable energy sources
    • Y02E10/50Photovoltaic [PV] energy
    • Y02E10/543Solar cells from Group II-VI materials
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02PCLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P70/00Climate change mitigation technologies in the production process for final industrial or consumer products
    • Y02P70/50Manufacturing or production processes characterised by the final manufactured product

Landscapes

  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Electromagnetism (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Photovoltaic Devices (AREA)
  • Photosensitive Polymer And Photoresist Processing (AREA)
AR228741A 1981-03-16 1982-03-15 Una pelicula delgada mejorada,particularmente util en la formacion de capas de pelicula aislantes o semiconductoras y el metodo para su obtencion AR226245A1 (es)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US24415181A 1981-03-16 1981-03-16

Publications (1)

Publication Number Publication Date
AR226245A1 true AR226245A1 (es) 1982-06-15

Family

ID=22921568

Family Applications (1)

Application Number Title Priority Date Filing Date
AR228741A AR226245A1 (es) 1981-03-16 1982-03-15 Una pelicula delgada mejorada,particularmente util en la formacion de capas de pelicula aislantes o semiconductoras y el metodo para su obtencion

Country Status (11)

Country Link
EP (1) EP0060487B1 (es)
JP (1) JPS57165832A (es)
AR (1) AR226245A1 (es)
AU (1) AU560650B2 (es)
BR (1) BR8201402A (es)
CA (1) CA1165016A (es)
DE (1) DE3278607D1 (es)
IL (1) IL65164A (es)
IN (1) IN158650B (es)
MX (1) MX158814A (es)
ZA (1) ZA821611B (es)

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4937651A (en) * 1985-08-24 1990-06-26 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device free from the current leakage through a semiconductor layer and method for manufacturing same
AU583423B2 (en) * 1985-09-21 1989-04-27 Semiconductor Energy Laboratory Co. Ltd. Semiconductor device free from the electrical shortage through a semiconductor layer and method for manufacturing same
US4774193A (en) * 1986-03-11 1988-09-27 Siemens Aktiengesellschaft Method for avoiding shorts in the manufacture of layered electrical components
JPH04241576A (ja) * 1991-01-14 1992-08-28 Matsushita Graphic Commun Syst Inc 画像符号化装置
JP4352515B2 (ja) 1999-07-21 2009-10-28 チッソ株式会社 液晶組成物および液晶表示素子
FR3037723B1 (fr) * 2015-06-16 2019-07-12 Commissariat A L'energie Atomique Et Aux Energies Alternatives Procede de realisation d'un empilement du type premiere electrode / couche active / deuxieme electrode.
CN114725242B (zh) * 2022-04-08 2023-06-06 成都中建材光电材料有限公司 一种提高量产化碲化镉薄膜电池发电效率的方法

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4174217A (en) * 1974-08-02 1979-11-13 Rca Corporation Method for making semiconductor structure
JPS5117671A (en) * 1974-08-05 1976-02-12 Hitachi Ltd Pataanno shuseihoho
DE2503171A1 (de) * 1975-01-27 1976-07-29 Siemens Ag Fotolack-aetzverfahren
JPS51122379A (en) * 1975-04-18 1976-10-26 Fujitsu Ltd Treatment for defect of photo-mask
US4185294A (en) * 1975-12-10 1980-01-22 Tokyo Shibaura Electric Co., Ltd. Semiconductor device and a method for manufacturing the same
GB1532616A (en) * 1976-06-08 1978-11-15 Monsolar Inc Photo-voltaic power generating means and methods
JPS5320863A (en) * 1976-08-11 1978-02-25 Hitachi Ltd Defect correcting method of photo masks and reticles
JPS57124437A (en) * 1981-01-26 1982-08-03 Mitsubishi Electric Corp Correction of pattern defect
JPS57124436A (en) * 1981-01-26 1982-08-03 Mitsubishi Electric Corp Correction of pattern defect

Also Published As

Publication number Publication date
EP0060487B1 (en) 1988-06-01
IL65164A0 (en) 1982-05-31
ZA821611B (en) 1983-03-30
AU560650B2 (en) 1987-04-16
DE3278607D1 (en) 1988-07-07
JPS57165832A (en) 1982-10-13
CA1165016A (en) 1984-04-03
BR8201402A (pt) 1983-02-01
IL65164A (en) 1985-02-28
MX158814A (es) 1989-03-15
EP0060487A1 (en) 1982-09-22
AU8156682A (en) 1982-09-23
IN158650B (es) 1986-12-27

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