AR095457A1 - Dispositivo semiconductor y método para proporcionar un inductor en dicho dispositivo semiconductor - Google Patents

Dispositivo semiconductor y método para proporcionar un inductor en dicho dispositivo semiconductor

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Publication number
AR095457A1
AR095457A1 ARP140100641A ARP140100641A AR095457A1 AR 095457 A1 AR095457 A1 AR 095457A1 AR P140100641 A ARP140100641 A AR P140100641A AR P140100641 A ARP140100641 A AR P140100641A AR 095457 A1 AR095457 A1 AR 095457A1
Authority
AR
Argentina
Prior art keywords
semiconductor device
microplate
pcb
metal layer
layer
Prior art date
Application number
ARP140100641A
Other languages
English (en)
Inventor
Nejati Babak
Kyu Song Young
Park Yunseo
Zhang Xiaonan
David Lane Ryan
Hadjichristos Aristotele
Chen Xiaoming
Original Assignee
Qualcomm Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Qualcomm Inc filed Critical Qualcomm Inc
Publication of AR095457A1 publication Critical patent/AR095457A1/es

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    • H01L23/522Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body
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  • Coils Or Transformers For Communication (AREA)

Abstract

Dispositivo semiconductor que incluye una placa de circuito impreso (PCB), un conjunto de puntos de soldadura y una microplaqueta. La PCB incluye una primera capa de metal. El conjunto de puntos de soldadura se encuentra acoplado a la PCB. La microplaqueta se encuentra acoplada a la PCB a través del conjunto de puntos de soldadura. La microplaqueta incluye una segunda capa de metal y una tercera capa de metal. La primera capa de metal de la PCB, el conjunto de puntos de soldadura, y las capas de metal segunda y tercera de la microplaqueta se encuentran configuradas para funcionar como un inductor en el dispositivo semiconductor. En algunas implementaciones, la microplaqueta además incluye una capa de pasivación. La capa de pasivación se encuentra posicionada entre la segunda capa de metal y la tercera capa de metal. En algunas implementaciones, la segunda capa de metal se encuentra posicionada entre la capa de pasivación y el conjunto de puntos de soldadura.
ARP140100641A 2013-03-01 2014-02-27 Dispositivo semiconductor y método para proporcionar un inductor en dicho dispositivo semiconductor AR095457A1 (es)

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EP2962329B1 (en) 2021-03-31
ES2864881T3 (es) 2021-10-14
BR112015020828A2 (pt) 2017-07-18
CN105009282A (zh) 2015-10-28
TW201440198A (zh) 2014-10-16
BR112015020828B1 (pt) 2022-02-08
JP2016510172A (ja) 2016-04-04
US9035421B2 (en) 2015-05-19
US20140246753A1 (en) 2014-09-04
EP2962329A1 (en) 2016-01-06
KR20150121200A (ko) 2015-10-28
KR101780047B1 (ko) 2017-09-19
WO2014133883A1 (en) 2014-09-04
TWI585938B (zh) 2017-06-01

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