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Internal Circuitry In Semiconductor Integrated Circuit Devices
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Abstract
A method for preventing the increasing of a un-grounding contact window resistance comprising: providing a substrate on which at least one metal oxide half element is formed, a plurality of metal wire is exposed on the surface of the substrate, a dielectric layer is formed between the metal layers, an oxide layer is formed between the metal wire and the dielectric layer; defining a pattern of an oxide layer to form a dielectric window, and then etching and exposing the dielectric surface; bumping the exposed the metal wire and the dielectric layer by a plasma.
TW086119413A1997-12-201997-12-20A method for preventing the increasing of a un-grounding contact window resistance
TW354418B
(en)