TW358227B - Half-embedded metal manufacturing for improvement of planarization of Ics - Google Patents
Half-embedded metal manufacturing for improvement of planarization of IcsInfo
- Publication number
- TW358227B TW358227B TW085106208A TW85106208A TW358227B TW 358227 B TW358227 B TW 358227B TW 085106208 A TW085106208 A TW 085106208A TW 85106208 A TW85106208 A TW 85106208A TW 358227 B TW358227 B TW 358227B
- Authority
- TW
- Taiwan
- Prior art keywords
- forming
- planarization
- shallow trench
- ics
- improvement
- Prior art date
Links
Landscapes
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
Abstract
A method for forming conducting layers, being the conducting layer to, during manufacturing of ICs, improve the scale coating and planarization, including the following steps: forming on the semiconductor substrate a semiconductor device structure; forming on said semiconductor device structure an insulating layer; forming on said insulating layer a shallow trench, being the conducting layer deposited on said shallow trench; etching said insulating layer in said shallow trench, until contacting said semiconductor device structure, for forming contact opening; depositing said conducting layer, with a part of said conductive layer being embedded inside said shallow trench, to drive down the step height of the conducting layer, for improvement of planarization.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
TW085106208A TW358227B (en) | 1996-05-24 | 1996-05-24 | Half-embedded metal manufacturing for improvement of planarization of Ics |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
TW085106208A TW358227B (en) | 1996-05-24 | 1996-05-24 | Half-embedded metal manufacturing for improvement of planarization of Ics |
Publications (1)
Publication Number | Publication Date |
---|---|
TW358227B true TW358227B (en) | 1999-05-11 |
Family
ID=57940502
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
TW085106208A TW358227B (en) | 1996-05-24 | 1996-05-24 | Half-embedded metal manufacturing for improvement of planarization of Ics |
Country Status (1)
Country | Link |
---|---|
TW (1) | TW358227B (en) |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6476496B1 (en) | 1999-06-28 | 2002-11-05 | Mitsubishi Denki Kabushiki Kaisha | Semiconductor device and method of manufacturing the same |
US7122954B2 (en) | 2002-08-30 | 2006-10-17 | Seiko Epson Corporation | Electro-optical device, method of manufacturing the same, and electronic apparatus |
-
1996
- 1996-05-24 TW TW085106208A patent/TW358227B/en not_active IP Right Cessation
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6476496B1 (en) | 1999-06-28 | 2002-11-05 | Mitsubishi Denki Kabushiki Kaisha | Semiconductor device and method of manufacturing the same |
US7122954B2 (en) | 2002-08-30 | 2006-10-17 | Seiko Epson Corporation | Electro-optical device, method of manufacturing the same, and electronic apparatus |
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Legal Events
Date | Code | Title | Description |
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MK4A | Expiration of patent term of an invention patent |