TW358227B - Half-embedded metal manufacturing for improvement of planarization of Ics - Google Patents

Half-embedded metal manufacturing for improvement of planarization of Ics

Info

Publication number
TW358227B
TW358227B TW085106208A TW85106208A TW358227B TW 358227 B TW358227 B TW 358227B TW 085106208 A TW085106208 A TW 085106208A TW 85106208 A TW85106208 A TW 85106208A TW 358227 B TW358227 B TW 358227B
Authority
TW
Taiwan
Prior art keywords
forming
planarization
shallow trench
ics
improvement
Prior art date
Application number
TW085106208A
Other languages
Chinese (zh)
Inventor
qiu-shan You
Original Assignee
Taiwan Semiconductor Mfg Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Taiwan Semiconductor Mfg Co Ltd filed Critical Taiwan Semiconductor Mfg Co Ltd
Priority to TW085106208A priority Critical patent/TW358227B/en
Application granted granted Critical
Publication of TW358227B publication Critical patent/TW358227B/en

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  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)

Abstract

A method for forming conducting layers, being the conducting layer to, during manufacturing of ICs, improve the scale coating and planarization, including the following steps: forming on the semiconductor substrate a semiconductor device structure; forming on said semiconductor device structure an insulating layer; forming on said insulating layer a shallow trench, being the conducting layer deposited on said shallow trench; etching said insulating layer in said shallow trench, until contacting said semiconductor device structure, for forming contact opening; depositing said conducting layer, with a part of said conductive layer being embedded inside said shallow trench, to drive down the step height of the conducting layer, for improvement of planarization.
TW085106208A 1996-05-24 1996-05-24 Half-embedded metal manufacturing for improvement of planarization of Ics TW358227B (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
TW085106208A TW358227B (en) 1996-05-24 1996-05-24 Half-embedded metal manufacturing for improvement of planarization of Ics

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
TW085106208A TW358227B (en) 1996-05-24 1996-05-24 Half-embedded metal manufacturing for improvement of planarization of Ics

Publications (1)

Publication Number Publication Date
TW358227B true TW358227B (en) 1999-05-11

Family

ID=57940502

Family Applications (1)

Application Number Title Priority Date Filing Date
TW085106208A TW358227B (en) 1996-05-24 1996-05-24 Half-embedded metal manufacturing for improvement of planarization of Ics

Country Status (1)

Country Link
TW (1) TW358227B (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6476496B1 (en) 1999-06-28 2002-11-05 Mitsubishi Denki Kabushiki Kaisha Semiconductor device and method of manufacturing the same
US7122954B2 (en) 2002-08-30 2006-10-17 Seiko Epson Corporation Electro-optical device, method of manufacturing the same, and electronic apparatus

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6476496B1 (en) 1999-06-28 2002-11-05 Mitsubishi Denki Kabushiki Kaisha Semiconductor device and method of manufacturing the same
US7122954B2 (en) 2002-08-30 2006-10-17 Seiko Epson Corporation Electro-optical device, method of manufacturing the same, and electronic apparatus

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