KR20130007242A - Light emitting device module and lighting system including the same - Google Patents

Light emitting device module and lighting system including the same Download PDF

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Publication number
KR20130007242A
KR20130007242A KR1020110064717A KR20110064717A KR20130007242A KR 20130007242 A KR20130007242 A KR 20130007242A KR 1020110064717 A KR1020110064717 A KR 1020110064717A KR 20110064717 A KR20110064717 A KR 20110064717A KR 20130007242 A KR20130007242 A KR 20130007242A
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KR
South Korea
Prior art keywords
light emitting
emitting device
device module
dam
conductive layer
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Application number
KR1020110064717A
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Korean (ko)
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KR101813166B1 (en
Inventor
박준석
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엘지이노텍 주식회사
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Priority to KR1020110064717A priority Critical patent/KR101813166B1/en
Priority to US13/412,820 priority patent/US8878215B2/en
Priority to JP2012051938A priority patent/JP2013008941A/en
Priority to TW101108092A priority patent/TWI546984B/en
Priority to EP12160221.3A priority patent/EP2538462B1/en
Priority to CN201210100153.4A priority patent/CN102842670B/en
Publication of KR20130007242A publication Critical patent/KR20130007242A/en
Priority to US14/505,362 priority patent/US9705054B2/en
Priority to JP2016224526A priority patent/JP6339161B2/en
Application granted granted Critical
Publication of KR101813166B1 publication Critical patent/KR101813166B1/en

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/50—Wavelength conversion elements
    • H01L33/507—Wavelength conversion elements the elements being in intimate contact with parts other than the semiconductor body or integrated with parts other than the semiconductor body
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/52—Encapsulations
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/52—Encapsulations
    • H01L33/54—Encapsulations having a particular shape
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/58—Optical field-shaping elements
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/62—Arrangements for conducting electric current to or from the semiconductor body, e.g. lead-frames, wire-bonds or solder balls
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/64—Heat extraction or cooling elements
    • H01L33/644—Heat extraction or cooling elements in intimate contact or integrated with parts of the device other than the semiconductor body
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805—Shape
    • H01L2224/4809—Loop shape
    • H01L2224/48091—Arched
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
    • H01L2224/732—Location after the connecting process
    • H01L2224/73251—Location after the connecting process on different surfaces
    • H01L2224/73265—Layer and wire connectors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/181—Encapsulation

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  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Power Engineering (AREA)
  • Planar Illumination Modules (AREA)

Abstract

Embodiments include a first conductive layer and a second conductive layer electrically separated from each other; A light emitting device electrically connected to the first conductive layer and the second conductive layer; A dam disposed in a peripheral region of the light emitting device; A molding part surrounding the light emitting device and disposed in the dam; And a reflecting member disposed in a peripheral region of the dam and having an inner wall formed on an inclined surface thereof.

Description

Light emitting device module and lighting system including the same

The embodiment relates to a light emitting device package and improves light efficiency of the light emitting device package.

Light emitting devices such as light emitting diodes (LEDs) and laser diodes (LDs) using semiconductors of Group 3-5 or 2-6 compound semiconductor materials of semiconductors have been developed through the development of thin film growth technology and device materials. Various colors such as green, blue, and ultraviolet light can be realized, and efficient white light can be realized by using fluorescent materials or combining colors, and low power consumption, semi-permanent life, and quicker than conventional light sources such as fluorescent and incandescent lamps can be realized. It has the advantages of response speed, safety and environmental friendliness.

Therefore, the light emitting diode can replace a light emitting diode backlight, a fluorescent lamp or an incandescent bulb which replaces a cold cathode fluorescent lamp (CCFL) constituting a backlight module of an optical communication means, a backlight of a liquid crystal display (LCD) display device. Applications are expanding to white light emitting diode lighting devices, automotive headlights and traffic lights.

The light efficiency may be improved by going straight without being scattered around the light emitted from the light emitting device module.

The embodiment aims to improve the light efficiency of the light emitting device module.

Embodiments include a first conductive layer and a second conductive layer electrically separated from each other; A light emitting device electrically connected to the first conductive layer and the second conductive layer; A dam disposed in a peripheral region of the light emitting device; A molding part surrounding the light emitting device and disposed in the dam; And a reflecting member disposed in a peripheral region of the dam and having an inner wall formed on an inclined surface thereof.

The display device may further include an electrode pad disposed on at least some regions of the first conductive layer and the second conductive layer.

The electrode pad may be made of silver (Ag).

The dam may be arranged in a circle around the light emitting device.

The horizontal cross section may form an ellipse around the light emitting element.

The dam may have a height of 40 to 60 micrometers.

The dam has at least one step with a step at the top, the edge of the molding portion may be fixed to the step.

The dam may have a groove formed at an upper portion thereof, and an edge of the molding part may be fixed to the groove.

The light emitting device module may further include a PSR layer between the first conductive layer and the second conductive layer.

The dam may be printed and formed on the PSR layer.

The first conductive layer and the second conductive layer can be in contact with the heat dissipation layer with the insulating layer interposed therebetween.

The reflective member may be disposed on the PSR layer.

The reflective member and the PSR layer may be combined as a fixing member.

The fixing member may be a double sided adhesive or double sided adhesive tape.

The width of the uppermost end of the inclined surface of the reflective member may be 1.5 to 2 times the width of the molding part fixed to the dam.

Another embodiment provides an illumination system including the above light emitting device module.

The lighting system further includes a light guide plate for transmitting light emitted from the light emitting device module, and the light guide plate may be formed with a groove corresponding to the light emitting device module.

The phosphor layer may be disposed in the groove of the light guide plate.

In the light emitting device module according to the embodiment, the reflection member disposed at the edge of the light emitting device module may reflect the light emitted from the light emitting device to adjust the directivity angle.

1 is a cross-sectional view of an embodiment of a light emitting device module,
2 to 7 are views showing a manufacturing process of the light emitting device module of FIG.
8 to 11 are cross-sectional views of another embodiment of a light emitting device module,
FIG. 12 is a view showing an embodiment of a wiring structure of a light emitting device of portion 'A' of FIG. 1,
13 is a view showing another embodiment of a light emitting device module,
14 is a view showing an arrangement of a light emitting device module array and a light guide plate;
15 to 16 is a view showing an array in which the above-described light emitting device module is disposed,
17 is a view showing an embodiment of a lighting device in which a light emitting device module is disposed;
18 is a view illustrating an embodiment of a display device in which a light emitting device module is disposed;
19 is a view illustrating an embodiment of driving a light emitting device module in the display device of FIG. 18.

DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS Hereinafter, preferred embodiments of the present invention will be described with reference to the accompanying drawings.

In the description of the embodiment according to the present invention, when described as being formed on the "on or under" of each element, the (up) or down (on) or under) includes both two elements being directly contacted with each other or one or more other elements are formed indirectly between the two elements. Also, when expressed as "on or under", it may include not only an upward direction but also a downward direction with respect to one element.

The thickness and size of each layer in the drawings are exaggerated, omitted, or schematically shown for convenience and clarity of explanation. In addition, the size of each component does not necessarily reflect the actual size.

1 is a cross-sectional view of an embodiment of a light emitting device module.

In the light emitting device module 200 according to the present embodiment, a pair of first and second conductive layers 140 are electrically separated from each other, and are electrically connected to the first and second conductive layers 140, respectively. 100 is disposed. The first and second conductive layers 140 are in contact with the heat dissipation layer 120 through the insulating layer 130.

The heat dissipation layer 120 may be made of a material having excellent thermal conductivity such as aluminum (Al), and the insulating layer 130 transfers heat emitted from the first and second conductive layers 140 to the heat dissipation layer 120. It may be made of a material having excellent conductivity.

The thickness t 1 of the heat dissipation layer 120 may be 0.6 millimeter, and the thickness t 2 of the insulating layer 130 may be 0.1 millimeter, and each value may have a tolerance of 10%.

The PSR layer 160 may be disposed on the insulating layer 130 between the first and second conductive layers 140. The PSR layer 160 (Printed Solder Resister) may improve the luminance of the light emitting device module. . The PSR layer 160 may be made of an insulating material to prevent short circuit of the first and second conductive layers 140.

The electrode pads 150 may be disposed on the first and second conductive layers 140, respectively, and the electrode pads 150 may be made of silver (Ag). In FIG. 1, the electrode pad 150 is disposed in the same region as the first and second conductive layers 140, but the electrode pad 150 may be disposed in at least some regions of the first and second conductive layers 140. .

The first and second conductive layers 140 may have a thickness of 0.05 millimeters, and the electrode pads 150 may have a thickness of 0.01 millimeters. The thickness of the first and second conductive layers 140 may be the thickness of the electrode pads 150. 5 times, and the above-described values may have a tolerance of 10%.

The first and second conductive layers 140 may increase light efficiency by reflecting light generated from the light emitting device 100. An electrode pad 150 made of silver (Ag) may increase light reflection. have.

The light emitting device 100 may be electrically connected to the first and second conductive layers 140, and a vertical light emitting device, a horizontal light emitting device, or a flip light emitting device may be disposed. In the present embodiment, the light emitting device 100 is in electrical contact with one conductive layer 140 through the adhesive layer 110, and is in electrical contact with another conductive layer through the wire 105.

The molding unit 180 may surround and protect the light emitting device 100. In addition, the molding unit 180 may include a phosphor 185 to change the wavelength of the light emitted from the light emitting device 100. The molding part 180 may be formed to cover at least the light emitting device 100 and the wire 105.

In addition, the light of the first wavelength region emitted from the light emitting device 100 is excited by the phosphor 185 and converted into the light of the second wavelength region, and the light of the second wavelength region is a lens (not shown). The light path may be changed while passing through the light path conversion unit.

The lens may be emitted from the light emitting device 100 to convert an optical path through refraction of light whose wavelength is converted in the phosphor, and in particular, may adjust an orientation angle when the light emitting device module is used in the backlight unit.

The lens is made of a material having good light transmittance, for example, may be made of PolyMethylMethAcrylate (PMMA), Polycarbonate (PC), Polyethylene (PE) or resin injection molding.

In addition, the dam 170 may be formed in a peripheral area of the light emitting device 100, and the dam 170 may fix an edge of the molding unit 180. That is, after the molding unit 180 is formed to surround the light emitting device 100, the edge of the molding unit 180 is fixed at the dam 170, and the molding unit 180 is disposed in the dam 170. . The dam 170 may be arranged in a circular or elliptical shape to fix the circumference of the molding unit 180.

The height of the dam 170 may be 40 to 60 micrometers, if the height of the dam 170 is too low may not be sufficient for fixing the molding unit 180, if the height of the dam 170 is too high light emitting device It may affect the progress of light emitted in the horizontal direction from 100.

The reflection member 190 may be spaced apart from the dam 170 by a predetermined interval. In this embodiment, since the cavity is not formed around the light emitting device 100, a lot of light emitted from the light emitting device 100 may be emitted to the side of the light emitting device module 200, so that the reflective member 190 may have a side surface. By reflecting the light directed toward the light emitting device module can adjust the directivity angle.

As the reflective member 190, a material having excellent reflectance may be used, and as illustrated, an inclined surface may be formed on the inner wall to increase reflection efficiency of light emitted from the light emitting device 100. When fixing the reflective member 190 to the PSR layer 160 or the like, a double-sided adhesive or a double-sided adhesive tape or the like may be used as the fixing member 195.

The width of the top of the inclined surface of the reflective member (190) (W R), and an opening through which light is emitted from the light emitting element module, in the width (W R) is fixed to the dam 170, the molding section 180 of the opening The width W V may be 1.5 to 2 times, and the reflective member 190 has an elliptical shape and thus has a large range.

In the present embodiment, one light emitting device is disposed in one light emitting device module, but a plurality of light emitting devices may be disposed, and light emitting devices emitting red, green, and blue light when three light emitting devices are disposed, respectively. You can also place it.

2 to 7 are views illustrating a manufacturing process of the light emitting device module of FIG. 1.

First, as shown in FIG. 2, the insulating layer 130 is prepared on the heat dissipating layer 120. The heat dissipation layer 120 may be made of aluminum, and the insulating layer 130 may also be made of an insulating material having excellent thermal conductivity.

As shown in FIG. 3, the first and second conductive layers 140 and the electrode pads 150 may be formed on the insulating layer 130. The first and second conductive layers 140 may be formed by masking and patterning a material having excellent electrical conductivity such as copper (Cu) on the surface of the insulating layer 130.

The electrode pad 150 may be formed by patterning the same area or a narrower area than the first and second conductive layers 140. The electrode pad 150 may not only increase the reflectance of the first and second electrode layers 150 but may also prevent discoloration of the first and second electrode layers 150. The electrode pad 150 may be formed by a coating method, or may be formed of a plurality of layers of SiO 2 or TiO 2 .

As shown in FIG. 4, the PSR layer 160 is filled between the first and second conductive layers 140 to prepare a region where a reflective member, a molding part, or the like is to be formed, and the first and second conductive layers ( 140 can prevent an electrical short.

As shown in FIG. 5, the light emitting device 100 is fixed to one conductive layer 140 and the electrode pad 150 through the adhesive layer 110, and the light emitting device 100 is fixed to the other conductive layer 140. ) And the electrode pad 150 are electrically connected to each other through the wire 105.

Then, the dam 170 is formed in the peripheral region of the light emitting device 100. The dam 170 is for fixing the molding part and may be formed on the PSR layer 160 by a printing method such as a silk screen method.

As shown in FIG. 6, the molding unit 180 may be coated and cured around the light emitting device 100 to form the molding unit 180. The molding unit 180 may include the phosphor 185, and the edge of the molding unit 180 may be fixed to the dam 170 to form a circular to elliptical shape.

As shown in FIG. 7, the reflective member 190 may be fixed on the PSR layer 160 through the fixing member 195. The cavity formed by the PSR layer 160 and the reflective member 190 may act as a reflective cup. The reflective member 190 may be inclined to the inner wall, and may prevent infiltration of foreign matter from the outside through the moisture resistant coating.

8 to 11 are cross-sectional views of another embodiment of a light emitting device module.

In the embodiment illustrated in FIG. 8, a groove having a 'V' or 'U' shape is formed in an upper portion of the dam 170, and an edge of the molding unit 180 is fixed to the groove. At this time, fixing of the edge of the molding unit 180 through the groove may be easy.

In the embodiment shown in FIG. 9, the upper portion of the dam 170 has a round shape, and an edge of the molding unit 180 is fixed to the round shape.

In the embodiment illustrated in FIG. 10 and the embodiment illustrated in FIG. 11, a step to a groove is formed in the upper portion of the dam 170 to facilitate fixing of the molding unit 180. In the embodiment shown in FIG. 10, a step is formed at an upper portion of the dam 170, and the step is disposed at a higher edge of the dam 170. In addition, in the embodiment shown in FIG. 11, a step or a groove is formed in the upper portion of the dam 170 to fix the edge of the molding part 180.

FIG. 12 is a diagram illustrating an embodiment of a wiring structure of a light emitting device of portion 'A' of FIG. 1.

In FIG. 1, the horizontal light emitting device 100 is disposed, the first electrode 100a is connected to the first conductive layer 140a by a wire 105, and the second electrode 100b is a second conductive layer. The wire 105 is connected to the 140b. In this case, electrode pads may be disposed on the surfaces of the first conductive layer 140a and the second conductive layer 140b.

In the present exemplary embodiment, the first conductive layer 140a and the second conductive layer 140b are disposed in a diagonal direction around the horizontal light emitting device 100 so that the first and second conductive layers 140a, The arrangement area of 140b) can be reduced.

13 is a view showing another embodiment of a light emitting device module.

Unlike the above-described embodiments, the dam 170 is omitted, and the reflective member 190 fixes the edge of the molding part 180. The height of the molding unit 180 is lower than the height of the reflective member 190, but may be higher.

14 is a diagram illustrating an arrangement of a light emitting device module array and a light guide plate. As shown in FIG. 14, when the height of the molding part is disposed higher than the height of the reflective member, or when the lens is disposed on the molding part and the height of the lens is higher than the height of the reflective member, the light emitting device module is disposed in the backlight unit. When used, the light guide plate may be arranged as follows.

In FIG. 14, a plurality of grooves are formed at one corner of the light guide plate, and light emitting device modules 200 are disposed in the grooves, respectively. That is, when the height of the molding part or the lens is the highest in the light emitting device module 200, if the light guide plate and the light emitting device module 200 are in direct contact with each other, the molding part or the lens may be damaged. Can be prevented from coming into direct contact with the light guide plate.

In addition, the phosphor layer may be coated on the inner surface of the groove formed in the light guide plate, in which case the phosphor in the molding part of the light emitting device module may be omitted.

 15 to 16 illustrate an array in which the above-described light emitting device module is disposed.

Since the first conductive layer 140a may supply driving signals to the light emitting devices, the first conductive layer 140a may be common to each light emitting device and may be an anode electrode, and the second conductive layer 140b may be connected to each light emitting device. And may be a cathode electrode.

In FIG. 15, the region B in which the dam is to be disposed is shown at the edge of the region where the light emitting element is to be disposed, and the electrode pad a is disposed in the region where the light emitting element is to be disposed on the first conductive layer 140a. In addition, another electrode pad b may be disposed in a region where the second conductive layer 140b is to be connected to the light emitting device. The arrangement of the electrode pads may be applied to a vertical light emitting device. The first and second conductive layers 140a and 140b are disposed, and the PSR layer 160 is exposed to another region.

In FIG. 16, the light emitting device 100 is disposed on the electrode pad 150a of the first electrode layer 140a in FIG. 15, and the light emitting device 100 is connected to the second electrode layer 140b through the wire 105. The reflection member 190 is disposed at the edge of the region B in which the dam is formed.

The shape of the reflective member 190 has a large influence on the projection area of the light emitted from the light emitting element. In the present embodiment, the reflective member 190 is disposed in an elliptical shape. When the reflective member 190 is cut in a direction parallel to the arrangement of the first conductive layer and the second conductive layer, the cross section of the inclined surface of the reflective member 190 and the inner surface of the reflective member 190 is elliptical. In this case, the ellipse formed by the inclined surface of the inner surface of the reflective member 190 may have a long radius of 180 to 220% of the short radius.

A plurality of light emitting device modules according to the embodiment may be arranged on a substrate, and a light guide plate, a prism sheet, a diffusion sheet, or the like, which is an optical member, may be disposed on an optical path of the light emitting device module. The light emitting device module, the substrate, and the optical member may function as a light unit. Another embodiment may be implemented as a display device, an indicator device, or a lighting system including the semiconductor light emitting device or the light emitting device module described in the above embodiments, and for example, the lighting system may include a lamp or a street lamp. Hereinafter, an illumination device and a backlight unit will be described as an embodiment of a lighting system in which the above-described light emitting device module is disposed.

17 is a diagram illustrating an embodiment of a lighting apparatus in which a light emitting device module is disposed.

The lighting apparatus according to the embodiment includes a light source 600 for projecting light, a housing 400 in which the light source 600 is embedded, a heat dissipation part 500 for dissipating heat from the light source 600, and the light source 600. And a holder 700 for coupling the heat dissipation part 500 to the housing 400.

The housing 400 includes a socket coupling part 410 coupled to an electric socket and a body part 420 connected to the socket coupling part 410 and having a light source 600 embedded therein. One air flow port 430 may be formed in the body portion 420.

A plurality of air flow port 430 is provided on the body portion 420 of the housing 400, wherein the air flow port 430 is composed of one air flow port, or a plurality of flow ports as shown in the radial arrangement Various other arrangements are also possible.

The light source 600 includes a plurality of light emitting device modules 650 on the substrate 610. Here, the substrate 610 may be a shape that can be inserted into the opening of the housing 400, it may be made of a material having a high thermal conductivity in order to transfer heat to the heat dissipation unit 500, as will be described later.

A holder 700 is provided below the light source, and the holder 700 may include a frame and another air flow port. In addition, although not shown, an optical member may be provided below the light source 600 to diffuse, scatter, or converge the light projected from the light emitting device module 650 of the light source 600.

18 is a view illustrating a backlight including a light emitting device module.

As shown, the display device 800 according to the present exemplary embodiment includes a light source module, a reflector 820 on the bottom cover 820, and light emitted from the light source module in front of the reflector 820. The light guide plate 840 guiding in front of the display device, the first prism sheet 850 and the second prism sheet 860 disposed in front of the light guide plate 840, and in front of the second prism sheet 860. It comprises a panel 870 is disposed and the color filter 880 disposed in the first half of the panel 870.

The light source module includes a light emitting device module 835 on the substrate 830. Here, the PCB 830 may be used, and the light emitting device module 835 is as described above.

The bottom cover 810 may accommodate components in the display device 800. The reflective plate 820 may be provided as a separate component as shown in the drawing, or may be disposed on the rear surface of the light guide plate 840, or The bottom cover 810 may be provided in the form of a coating with a highly reflective material.

Here, the reflection plate 820 can be made of a material having a high reflectance and can be used in an ultra-thin shape, and polyethylene terephthalate (PET) can be used.

The light guide plate 430 scatters the light emitted from the light emitting device module so that the light is uniformly distributed over the entire area of the screen of the liquid crystal display. Accordingly, the light guide plate 830 is made of a material having a good refractive index and transmittance. The light guide plate 830 may be formed of polymethyl methacrylate (PMMA), polycarbonate (PC), or polyethylene (PE).

The first prism sheet 850 is formed of a translucent and elastic polymer material on one surface of the support film, and the polymer may have a prism layer in which a plurality of three-dimensional structures are repeatedly formed. Here, the plurality of patterns may be provided in the stripe type and the valley repeatedly as shown.

In the second prism sheet 860, the direction of the floor and the valley of one surface of the support film may be perpendicular to the direction of the floor and the valley of one surface of the support film in the first prism sheet 850. This is to evenly distribute the light transmitted from the light source module and the reflective sheet in all directions of the panel 870.

In the present embodiment, the first prism sheet 850 and the second prism sheet 860 form an optical sheet, which is composed of another combination, for example, a micro lens array or a diffusion sheet and a micro lens array. Or a combination of one prism sheet and a micro lens array.

The liquid crystal display panel (Liquid Crystal Display) may be disposed on the panel 870, in addition to the liquid crystal display panel 860 may be provided with other types of display devices that require a light source.

The panel 870 is a state in which the liquid crystal is located between the glass body and the polarizing plate is placed on both glass bodies in order to use the polarization of light. Here, the liquid crystal has an intermediate property between a liquid and a solid, and liquid crystals, which are organic molecules having fluidity like a liquid, are regularly arranged like crystals. The liquid crystal has a structure in which the molecular arrangement is changed by an external electric field And displays an image.

A liquid crystal display panel used in a display device is an active matrix type, and a transistor is used as a switch for controlling a voltage supplied to each pixel.

The front surface of the panel 870 is provided with a color filter 880 to transmit the light projected from the panel 870, only the red, green and blue light for each pixel can represent an image.

19 is a view illustrating an embodiment of driving a light emitting device module in the display device of FIG. 18.

The driving unit of the light emitting device module supplies a driving signal or a current to each string 210 through the substrate 220 and a connector, and each of the strings 210 emits 6 to 8 light emission. The device module 200 is disposed. In this case, when a driving signal is differently supplied to each of the light emitting device modules 200 disposed in each string 210, light may be supplied by dividing the light into the dotted lines in the light guide plate 840.

While the present invention has been particularly shown and described with reference to exemplary embodiments thereof, it is to be understood that the invention is not limited to the disclosed exemplary embodiments, but, on the contrary, It will be understood that various modifications and applications are possible. For example, each component specifically shown in the embodiments can be modified and implemented. It is to be understood that all changes and modifications that come within the meaning and range of equivalency of the claims are therefore intended to be embraced therein.

100: light emitting element 105: wire
110: adhesive layer 120: heat dissipation layer
130: insulating layer 140: first and second conductive layer
150: electrode pad 160: PSR layer
170: dam 180: molding part
185 phosphor Phosphor reflection member
195: fixing member 200: light emitting device module
210: string 220: substrate
400 housing 500 heat dissipation unit
600: light source 700: holder
800: display device 810: bottom cover
820: reflector 830: circuit board module
840: Light guide plate 850, 860: First and second prism sheet
870 panel 880 color filter

Claims (18)

A first conductive layer and a second conductive layer electrically separated from each other;
A light emitting device electrically connected to the first conductive layer and the second conductive layer;
A dam disposed in a peripheral region of the light emitting device;
A molding part surrounding the light emitting device and disposed in the dam; And
The light emitting device module is disposed in the peripheral region of the dam, including a reflective member formed on the inner wall inclined surface. The method of claim 1,
The light emitting device module further comprises an electrode pad disposed on at least a portion of the first conductive layer and the second conductive layer. The method of claim 2,
The electrode pad is a light emitting device module made of silver (Ag). The method of claim 1,
The dam is a light emitting device module disposed in a circle around the light emitting device. The method of claim 1,
The horizontal cross section of the inclined surface is a light emitting device module forming an ellipse around the light emitting device. The method of claim 1,
The dam has a light emitting device module having a height of 40 to 60 micrometers. The method of claim 1,
The dam has at least one step with a step on the top, the light emitting device module is fixed to the edge of the molding portion in the step. The method of claim 1,
The dam has a groove formed in the upper portion, the light emitting device module is fixed to the edge of the molding portion in the groove. The method of claim 1,
The light emitting device module further comprises a PSR layer between the first conductive layer and the second conductive layer. The method of claim 9,
And the dam is printed on the PSR layer. The method of claim 1,
And the first conductive layer and the second conductive layer are in contact with the heat dissipation layer with an insulating layer interposed therebetween. The method of claim 1,
The reflective member is a light emitting device module disposed on the PSR layer. The method of claim 1,
The reflective member and the PSR layer is coupled to the light emitting device module. The method of claim 13,
The fixing member is a light emitting device module is a double-sided adhesive or double-sided adhesive tape. The method of claim 1,
The width of the uppermost end of the inclined surface of the reflective member is 1.5 to 2 times the width of the molding portion fixed to the dam. 16. An illumination system comprising the light emitting element module of any one of claims 1-15. 17. The method of claim 16,
And a light guide plate for transmitting light emitted from the light emitting device module, wherein the light guide plate has a groove corresponding to the light emitting device module. The method of claim 17,
Illumination system in which a phosphor layer is disposed in the groove of the light guide plate.
KR1020110064717A 2011-06-22 2011-06-30 Light emitting device module and lighting system including the same KR101813166B1 (en)

Priority Applications (8)

Application Number Priority Date Filing Date Title
KR1020110064717A KR101813166B1 (en) 2011-06-30 2011-06-30 Light emitting device module and lighting system including the same
US13/412,820 US8878215B2 (en) 2011-06-22 2012-03-06 Light emitting device module
JP2012051938A JP2013008941A (en) 2011-06-22 2012-03-08 Light emitting device module
TW101108092A TWI546984B (en) 2011-06-22 2012-03-09 Light emitting device module
EP12160221.3A EP2538462B1 (en) 2011-06-22 2012-03-19 Light emitting device module
CN201210100153.4A CN102842670B (en) 2011-06-22 2012-04-06 Light emitting device module
US14/505,362 US9705054B2 (en) 2011-06-22 2014-10-02 Light emitting device module
JP2016224526A JP6339161B2 (en) 2011-06-22 2016-11-17 Light emitting device package

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
KR1020110064717A KR101813166B1 (en) 2011-06-30 2011-06-30 Light emitting device module and lighting system including the same

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KR20130007242A true KR20130007242A (en) 2013-01-18
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Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20160147576A (en) * 2015-06-15 2016-12-23 엘지이노텍 주식회사 Light Emitting Device Package

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Publication number Priority date Publication date Assignee Title
KR20060030350A (en) * 2004-10-05 2006-04-10 삼성전자주식회사 White light generating unit, backlight assembly having the same and liquid crystal display apparatus having the same
JP4205135B2 (en) * 2007-03-13 2009-01-07 シャープ株式会社 Semiconductor light emitting device, multiple lead frame for semiconductor light emitting device
JP2010003994A (en) * 2008-06-23 2010-01-07 Sharp Corp Lighting device, backlight device, and method of manufacturing lighting device

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20160147576A (en) * 2015-06-15 2016-12-23 엘지이노텍 주식회사 Light Emitting Device Package

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