KR102229164B1 - High temperature evaporation source - Google Patents

Abstract

Disclosed is a high-temperature deposition source. According to one embodiment of the present invention, the high-temperature deposition source comprises: a crucible including a deposition substance; a nozzle placed on one side of the crucible to discharge the evaporated deposition substance; and an inner plate unit having at least a part combined with one side of the crucible to be placed in the crucible, and including at least one orifice communicating with the nozzle, and an inner plate module having a first deposition substance through hole through which the deposition substance primarily passes while controlling a separation distance from the orifice to the first deposition substance through hole. Therefore, the present invention is capable of controlling an evaporation amount of deposition substances in the crucible.

Description

High temperature evaporation source

The present invention relates to a high-temperature evaporation source, and more particularly, to a high-temperature evaporation source capable of controlling the evaporation amount of evaporation material inside a crucible without directly changing the aperture of the nozzle.

With the rapid development of information and communication technology and the expansion of the market, flat panel displays are in the spotlight as display devices. Such flat panel display devices include Liquid Crystal Display, Plasma Display Panel, and Organic Light Emitting Diodes.

Among them, organic electroluminescent devices, such as OLED, have very good advantages such as fast response speed, lower power consumption than conventional LCDs, light weight, ultra-thin, high luminance because they do not require a separate backlight device. It has been in the spotlight as a display device in recent years.

Such an organic light emitting device is a principle that an anode film, an organic thin film, and a cathode film are sequentially coated on a substrate, and a voltage is applied between the anode and the cathode, so that an appropriate difference in energy is formed on the organic thin film to emit light by itself.

In other words, the injected electrons and holes recombine, and the remaining excitation energy is generated as light. At this time, since the wavelength of light generated according to the amount of the dopant of the organic material can be adjusted, a full color can be implemented.

1 is a structural diagram of an organic electroluminescent device.

As shown in this figure, the organic light emitting diode is an anode, a hole injection layer, a hole transfer layer, a light emitting layer, and a hole blocking layer on a substrate. layer), an electron transfer layer, an electron injection layer, and a cathode are sequentially stacked and formed.

In this structure, ITO (Indium Tin Oxide) is mainly used as the anode, which has a small surface resistance and good permeability. In addition, the organic thin film is composed of multiple layers of a hole injection layer, a hole transport layer, a light emitting layer, a hole blocking layer, an electron transport layer, and an electron injection layer in order to increase luminous efficiency. Organic materials used as the emission layer include Alq3, TPD, PBD, m-MTDATA, and TCTA. As the cathode, a Lie-Al metal film is used. In addition, since the organic thin film is very weak to moisture and oxygen in the air, a sealing film is formed on the top to increase the life time of the device.

When the organic light emitting device shown in FIG. 1 is briefly summarized again, the organic light emitting device includes an anode, a cathode, and a light emitting layer interposed between the anode and the cathode, and holes are injected from the anode into the light emitting layer during driving, and electrons Is injected from the cathode into the light emitting layer. Holes and electrons injected into the emission layer combine in the emission layer to generate excitons, and these excitons transition from an excited state to a ground state to emit light.

These organic electroluminescent devices can be classified into monochromatic or full color organic electroluminescent devices according to the colors to be implemented. The full-color organic electroluminescent devices are red (R), green (G), and the three primary colors of light. Full color is realized by providing a light emitting layer patterned for each blue color (B).

A substrate deposition apparatus for a flat panel display device is applied to make an organic electroluminescent device having the structure as shown in FIG. 1, that is, to deposit a light emitting layer (organic material) and an electrode layer (inorganic material).

In a substrate deposition apparatus for a flat panel display device to which a thermal evaporation method is applied, a high temperature evaporation source for spraying a deposition material toward a substrate is provided.

Recently, a linear type of linear deposition source has been applied to secure the uniformity of the thin film thickness, simplify the control device, and reduce the volume of the chamber. It may be a deposition source for depositing organic or inorganic materials.

In such a high-temperature evaporation source, the size of the holes of a plurality of nozzles is adjusted in various ways to control the deposition thickness, so that the size of the nozzle is reduced for locations with a large amount of deposition, and the size of the nozzles is increased for locations with a small amount of deposition. The method of controlling the thickness is mainly used.

For example, 1) a method of adjusting by inserting a structure having a shape such as a small pipe into the hole of a basic nozzle, or 2) a method of directly manufacturing a nozzle into a shape of various sizes, etc. are used.

However, the method of 1) may cause a problem that the basic nozzle may be deformed or damaged during the insertion or removal process, and if the nozzle and the pipe do not contact locally, a temperature difference occurs and clogging ( clogging) problems may occur.

In addition, in the same method as 2), the nozzle is fabricated in a shape of various sizes and assembled in a screw method, but there may be a problem that the material leaks through the screw, and even if the nozzle is determined and passed through, the evaporation amount is different. In the case of the process, there is a problem that a through-processed nozzle cannot be used.

Republic of Korea Registration Gazette No. 10-1479942, (2014.12.31)

Therefore, the technical problem to be achieved by the present invention is a high-temperature deposition capable of controlling the evaporation amount of the deposition material inside the crucible without using a method of changing the diameter of the nozzle or replacing the nozzle itself using an auxiliary pipe. It is to provide the source.

According to an aspect of the present invention, a crucible having a deposition material; A nozzle disposed on one side of the crucible to discharge the evaporated deposition material; And at least one orifice coupled to one side of the crucible to be disposed inside the crucible, and passing through at least one orifice communicating with the nozzle, and a first deposition material through which the deposition material first passes. A high-temperature deposition source, characterized in that it includes an inner plate unit including an inner plate module capable of adjusting a separation distance from the orifice to the through hole of the first deposition material while a ball is provided.

The inner plate module is spaced apart from the orifice toward the deposition material by a predetermined distance, the first deposition material passage hole is provided, and the separation distance from the orifice to the first deposition material passage hole is adjustable. Plate module; And a second inner plate module coupled to the first inner plate module to arrange at least one orifice.

The first inner plate module includes a body portion disposed to contact the inner wall of the crucible by a predetermined distance from the upper end portion of the crucible, and a body portion provided at the upper end portion of the body portion so as to be engaged with the upper end portion of the crucible. A first inner plate body having a flange portion provided; And the first deposition material passage hole is provided in a predetermined region, and is coupled to the lower end of the body portion, and the separation distance from the orifice to the first deposition material passage hole can be adjusted by changing a position coupled to the body portion. It may include a first inner plate pressure control unit.

The first inner plate internal pressure control unit may include: a coupling skirt having a predetermined height to be coupled to and contact with an inner wall of the body portion; And a plate body that is coupled to one end of the coupling skirt to block passage of the deposition material, but is provided with at least one first deposition material through hole in a predetermined region.

A coupling hole is provided on one side selected from the body portion or the coupling skirt, and on the other side selected from the body portion or the coupling skirt, the plate body can be adjusted to a relative position of the plate body with respect to the body portion. A height adjustment coupling hole having a vertical long hole shape disposed at a position corresponding to the coupling hole may be provided.

In the first inner plate module, the first inner plate internal pressure adjusting part is defective in the first inner plate body so that the coupling skirt is disposed at a position close to the orifice and the plate body is disposed at a position far from the orifice. , It is possible to adjust the separation distance from the orifice to the through hole of the first deposition material.

The first inner plate module is configured such that the plate body is disposed at a position close to the orifice and the coupling skirt is disposed at a position far from the orifice, so that the first inner plate internal pressure control unit is defective in the first inner plate main body. , It is possible to adjust the separation distance from the orifice to the through hole of the first deposition material.

The second inner plate module may be provided to change an open area of the nozzle when the at least one orifice is disposed.

The orifice may include a tubular portion in which a second deposition material passing hole having a predetermined inner diameter is formed; And a locking portion coupled to an upper end of the tubular portion and engaging with one side of the second inner plate module.

The second inner plate module may include an orifice support plate having a tubular portion arranging hole in which the tubular portion is disposed; And a support skirt part coupled to the orifice support plate and engaged with an upper end of the first inner plate module.

The locking portion is a circular locking portion provided in a circular shape having a diameter larger than that of the tubular portion placing hole, and the orifice supporting plate may include a circular locking jaw provided at an edge of the tubular portion placing hole to support the circular locking portion. have.

By exchanging and disposing at least one orifice having a predetermined inner diameter on the circular locking protrusion of the orifice support plate, the open area of the nozzle may be changed.

The tubular portion arrangement hole is provided in a long hole shape so as to be relatively movable in a state in which the tubular portion is disposed through, and by disposing the tubular portion relative to the tubular portion arrangement hole in the long hole shape, the nozzle is opened. You can change the area.

The orifice support plate may include a guide groove provided at an edge of the tubular portion arrangement hole to support the locking portion, and guide relative movement while the locking portion is engaged.

The locking part is a rectangular locking part provided in a square shape having an area larger than the tubular part arranging hole, and the guide groove is a rectangular guide formed to be elongated along the relative movement direction of the rectangular locking part so as to guide the relative movement of the rectangular locking part. It can be a groove.

A coupling hole is provided on one side selected from the rectangular locking portion or the rectangular guide groove, and a relative position of the orifice with respect to the nozzle may be adjusted on the other side selected from the rectangular locking portion or the rectangular guide groove. A long hole-shaped position-adjusting coupling hole disposed at a position corresponding to the coupling hole may be provided.

Embodiments of the present invention use a method of changing the diameter of the nozzle or replacing the nozzle by using an auxiliary pipe by providing an inner plate unit capable of arranging at least one orifice in communication with the nozzle in the inner plate module. Without doing so, it is possible to control the evaporation amount of the evaporation material inside the crucible.

1 is a structural diagram of an organic electroluminescent device.
2 is a schematic structural diagram of a substrate deposition apparatus for a flat panel display device to which a high-temperature deposition source is applied according to an embodiment of the present invention.
3 is a diagram schematically illustrating a process of evaporating a deposition material in a high temperature deposition source according to the first embodiment of the present invention.
4 is an exploded perspective view showing the inner plate unit according to the first embodiment of the present invention.
5 are views for explaining a method of adjusting a separation distance from an orifice to a first deposition material passage hole according to a position at which the first inner plate internal pressure control unit is coupled to the first inner plate body.
6 are diagrams for explaining a method of changing an open area of a nozzle by arranging the orifice by moving relative to the guide groove of the second inner plate module.
7 is an exploded perspective view showing an inner plate unit according to a second embodiment of the present invention.

In order to fully understand the present invention, operational advantages of the present invention, and objects achieved by the implementation of the present invention, reference should be made to the accompanying drawings illustrating preferred embodiments of the present invention and the contents described in the accompanying drawings.

Hereinafter, the present invention will be described in detail by describing a preferred embodiment of the present invention with reference to the accompanying drawings. The same reference numerals shown in each drawing indicate the same members.

2 is a schematic structural diagram of a substrate deposition apparatus for a flat panel display device to which a high-temperature deposition source is applied according to an embodiment of the present invention.

Prior to the description compared to the drawings, the flat panel display device includes a liquid crystal display, a plasma display panel, and organic light emitting diodes, but hereinafter, the flat panel display device is used as an organic electric field. It will be described as a substrate for a light emitting device (OLED).

Referring to FIG. 2, a substrate deposition apparatus for a flat panel display device includes a process chamber 2 in which a deposition process is performed on a substrate, and a high-temperature deposition source 1 provided on one side of the process chamber 2 and sprays a deposition material toward the substrate. ).

The process chamber 2 is a place where a deposition process for a substrate is performed. That is, a place for depositing a light emitting layer (organic material) and an electrode layer (inorganic material) is formed in order to manufacture the organic electroluminescent device shown in FIG. 1. The deposition apparatus of this embodiment may be a deposition apparatus for depositing organic or inorganic materials.

During the deposition process, the inside of the process chamber 2 maintains a vacuum atmosphere. Therefore, a vacuum pump or the like may be connected to the process chamber 2.

Meanwhile, the high-temperature deposition source 1 is provided on one side of the process chamber 2 and sprays a deposition material toward the substrate.

Hereinafter, the high-temperature deposition source 1 of the present embodiment will be described in detail with reference to FIGS. 3 to 6.

3 is a diagram schematically illustrating a process of evaporating a deposition material in a high temperature deposition source according to a first embodiment of the present invention, and FIG. 4 is an exploded perspective view showing an inner plate unit according to the first embodiment of the present invention. 5 is a view for explaining a method of adjusting the separation distance from the orifice to the first deposition material passage hole according to the position of the first inner plate inner pressure control unit coupled to the first inner plate body, FIG. These are drawings for explaining a method of changing an open area of a nozzle by arranging the orifice by moving relative to the guide groove of the second inner plate module.

As shown in these drawings, the high-temperature deposition source 1 according to the first embodiment of the present invention includes a crucible 100, a nozzle 200, and an inner plate unit 500. Includes.

The crucible 100 is a place where a deposition material is provided, and the deposition material 10 is heated and evaporated by a heater (not shown) disposed on one side of the crucible 100.

The nozzle 200 is disposed on one side of the crucible 100 and serves to discharge the evaporated deposition material 10.

In FIG. 3, a high-temperature deposition source having an integral form in which the nozzle 200 is disposed on the crucible 100 is shown, but the present invention is not limited thereto, and the nozzle 200 communicates with the crucible 100. The present invention can be applied to various types of high-temperature deposition sources, such as a point-type high-temperature deposition source having a single nozzle, as well as a linear high-temperature deposition source having a nozzle disposed at a location.

Meanwhile, the inner plate unit 500 includes at least one orifice 600 and the inner plate module 700, and at least a part of the crucible 100 is disposed inside the crucible 100. Is combined on one side of.

The inner plate module 700 is disposed inside the crucible 100 and serves to control the evaporation amount of the deposition material inside the crucible 100, and the first inner plate module 710 and the first It includes 2 inner plate module 750.

The first inner plate module 710 is spaced apart from the orifice 600 toward the deposition material by a predetermined distance, and the first deposition material through hole 733 is provided, and the first deposition material through hole 733 from the orifice 600 It plays a role of adjusting the separation distance to ).

First, the first deposition material passage hole 733 will be described, when the deposition material 10 heated by a heater (not shown) at one side of the crucible 100 evaporates, depending on the location due to various factors. The amount of evaporation material to be evaporated may vary. Therefore, it is necessary to collect the deposition material in one direction and distribute it uniformly, and the first deposition material through hole 733 serves to collect the deposition material in one direction and distribute it evenly.

That is, as shown in detail in FIG. 3, the evaporation material 10 is heated and evaporated in the direction of the arrow, so that the evaporation material in a non-uniform evaporation state primarily passes through the first evaporation material passage hole 733 and all of them are collected. After that, it is uniformly distributed and discharged through the second deposition material passing hole 613 and the nozzle 200 in order.

The pressure of the deposition material inside the crucible generated at this time is referred to as the internal pressure. Since the internal pressure can be adjusted through the first deposition material through hole 733, the first deposition according to the amount of evaporation material and the size of the crucible is evaporated. The position and size of the material through hole 733 may be variously adjusted.

In addition, according to the present invention, by providing the first inner plate module 710, the position in which the first deposition material through hole 733 is disposed is changed, so that the distance from the orifice 600 to the first deposition material through hole 733 is changed. By adjusting the separation distance, the internal pressure, which is the pressure of the deposition material inside the crucible, can be controlled.

The first inner plate module 710 performing this role includes a first inner plate main body 720 and a first inner plate internal pressure adjusting unit 730, as shown in detail in FIGS. 3 and 4.

First, the first inner plate body 720 includes a body portion 721 disposed to contact the inner wall of the crucible 100 by a predetermined distance from the upper end portion of the crucible 100, and the body portion 721. It includes a flange portion 722 provided at the upper end and provided to be engaged with the upper end of the crucible 100.

Next, the first inner plate internal pressure control unit 730 is provided with a first deposition material passage hole 733 in a predetermined area, and is coupled to the lower end of the body portion 721, and is coupled to the body portion 721. It is provided to be able to adjust the separation distance from the orifice 600 to the first deposition material passing hole 733 by changing, and the internal pressure can be adjusted by adjusting the separation distance.

The first inner plate internal pressure control unit 730 is coupled to one end of the coupling skirt 731 and the coupling skirt 731 having a predetermined height to be coupled to and in contact with the inner wall of the body portion 721 so that the deposition material is It includes a plate body 732 that blocks passage but is provided with at least one first deposition material through hole 733 in a predetermined region.

A coupling hole 725 is provided on one side selected from the body portion 721 or the coupling skirt 731, and on the other side selected from the body portion 721 or the coupling skirt 731, the body portion 721 A height adjustment coupling hole 735 having a vertical long hole shape disposed at a position corresponding to the coupling hole 725 is provided so as to adjust the relative position of the plate body 731 with respect to ).

According to the first embodiment of the present invention, as shown in detail in FIG. 4, a circular coupling hole 725 is provided in the body portion 721 and a height adjustment coupling hole having a long hole shape in the coupling skirt 731 ( 735) is provided, but the present invention is not limited thereto and may be provided in an opposite position.

Hereinafter, referring to FIG. 5, the first inner plate inner pressure adjusting part 730 is coupled to the body part 721 of the first inner plate body 720, depending on the position at which the orifice 600 passes through the first deposition material. How to control the internal pressure by adjusting the separation distance to (733) will be described.

First, in the case of (a) to (c) of Figure 5, the first inner plate module 710, the coupling skirt 731 is disposed at a position close to the orifice 600, and the plate body 732 is the orifice 600 ), the first inner plate internal pressure control unit 730 is defective in the first inner plate body 720 so that the separation distance from the orifice 600 to the first deposition material passage hole 733 is reduced. Will be adjusted.

That is, since the plate body 732 is disposed at a position far from the orifice 600, the separation distance from the orifice 600 to the first deposition material passage hole 733 is increased.

Furthermore, in the case of (a), the circular coupling hole 725 is located in the center of the height-adjusting coupling hole 735 having a long hole shape, and in the case of (b), the circular coupling hole 725 has a long hole shape. It is located at the top of the height adjustment coupling hole 735, in the case of (c), by arranging the circular coupling hole 725 to be located at the bottom of the height adjustment coupling hole 735 having a long hole shape, the orifice 600 It is possible to more finely control the separation distance from the first deposition material through hole 733.

In a state in which the circular coupling hole 725 and the height adjustment coupling hole 735 are arranged at a desired position, the first inner plate internal pressure adjusting part 730 can be fixed by coupling them using coupling members such as bolts and nuts. will be.

In the case of (d) and (e) of Figure 5, the first inner plate module 710, the plate body 732 is disposed at a position close to the orifice 600, and the coupling skirt 731 is the orifice 600 The first inner plate internal pressure control unit 730 is defective in the first inner plate body 720 so as to be disposed at a position far from the orifice 600 to adjust the separation distance from the orifice 600 to the first deposition material passage hole 733 It is done.

That is, since the plate body 732 is disposed at a position close to the orifice 600, the separation distance from the orifice 600 to the first deposition material passage hole 733 becomes close.

Further, in the case of (d), the circular coupling hole 725 is located at the top of the height-adjusting coupling hole 735 having a long hole shape, and in the case of (d), the circular coupling hole 725 has a long hole shape. By arranging to be located at the bottom of the height adjustment coupling hole 735, it is possible to more finely adjust the separation distance from the orifice 600 to the first deposition material passage hole 733.

On the other hand, the second inner plate module 750 is coupled to the first inner plate module 710, and provides a place where at least one orifice 600 is disposed, and when at least one orifice 600 is disposed, a nozzle It plays a role of changing the open area of (200).

As shown in detail in FIG. 4, the second inner plate module 750 includes an orifice support plate 760 and a support skirt portion 770.

First, description of the orifice 600, the orifice 600 is in communication with the nozzle 200, but serves to change the open area of the nozzle 200, the second deposition material passing hole 613 having a predetermined inner diameter ) And a tubular portion 610 formed therein, and a locking portion 630 coupled to an upper end of the tubular portion 610 to be engaged with one side of the second inner plate module 750.

In order to support the orifice 600, the orifice support plate 760 of the second inner plate module 750 is formed with a tubular portion arranging hole 761 in which the tubular portion 610 of the orifice 600 is disposed.

And the orifice support plate 760 is provided at the edge of the tubular part arranging hole 761 to support the locking part 630, but the guide groove 763 for guiding the relative movement while the locking part 630 is engaged It is prepared.

The tubular part arranging hole 761 is provided in a long hole shape to allow relative movement while the tubular part 610 penetrates through it, and the tubular part 610 moves relative to the tubular part arranging hole 761 in the form of a long hole. By arranging the nozzle 200, it is possible to change the open area of the nozzle 200.

In the first embodiment of the present invention, as shown in detail in FIGS. 4 and 6, the locking part is a rectangular locking part 630 provided in a square shape having an area larger than that of the tubular part arranging hole 761, and the guide groove 763 ) Is characterized in that it is a rectangular guide groove 763 formed long along the relative movement direction of the rectangular locking portion 630 so as to guide the relative movement of the rectangular locking portion 630.

A coupling hole 764 is provided on one side of any one selected from the rectangular locking portion 630 or the rectangular guide groove 763, and on the other side selected from the rectangular locking portion 630 or the rectangular guide groove 763, In order to adjust the relative position of the orifice 600 with respect to the nozzle 200, a long hole-shaped position adjustment coupling hole 634 disposed at a position corresponding to the coupling hole 634 is provided.

According to the first embodiment of the present invention, as shown in detail in FIG. 4, a circular coupling hole 764 is provided in a square guide groove 763 and a position adjustment coupling having a long hole shape in the square locking portion 632 Although the ball 634 is provided, the present invention is not limited thereto and may be provided in the opposite position.

Meanwhile, the support skirt portion 770 is coupled to the orifice support plate 760, and serves to be engaged with the upper end of the first inner plate module 710.

Hereinafter, a method of changing the open area of the nozzle 200 by the orifice 600 having the structure described above and the second inner plate module 750 will be described in detail with reference to FIGS. 3 and 6.

First, as shown in detail in FIG. 3, the orifice 600 is disposed under the nozzle 200 so that the nozzle 200 and the second deposition material passing hole 613 formed in the orifice 600 communicate in the same shape. In the present state, all the holes of the nozzle 200 are open.

Looking at the second inner plate module 750 at this time, as shown in detail in (a) of FIG. 6, all four tubular parts 610 are arranged in the center of the tubular part arranging hole 761 And, since the holes of the nozzle 200 in communication with the second deposition material through holes 613 are all open in the same shape as the second deposition material through holes 613, all of the deposition materials discharged from the four nozzles are The same amount will be discharged.

However, as shown in (b) of FIG. 6, in the case where the two orifices disposed in the center among the four tubular parts 610 are arranged to move relative to each other in a direction away from each other, a nozzle disposed above the two orifices ( Since the hole of 200) and the second deposition material passing hole 613 are in an alternate state, the hole of the nozzle 200 is covered by the locking portion 630 as much as the gap, so that the second deposition material at both edges passes. The amount of the evaporation material discharged is reduced compared to the nozzle 200 communicated with the hole 613 in the same shape.

Eventually, the orifice 600 is moved relative to each other and placed at a desired position, thereby changing the shape in which the second deposition material passing hole 613 of the orifice 600 and the hole of the nozzle 200 communicate with each other. It is possible to control the amount of deposition material discharged through the crucible inside.

Furthermore, the amount of deposition material discharged from the nozzle at a specific position can be adjusted according to the position of the orifice to be moved relative to the orifice, and the amount of the deposition material discharged can be adjusted according to the moving distance of the orifice to move relative to each other, It is also possible to finely control the location where the deposition material is discharged depending on the direction in which the material is discharged.

As described above, according to the present embodiment, by providing the first inner plate module 710, the position at which the first deposition material through hole 733 is disposed is changed so that the first deposition material through hole 733 from the orifice 600 is changed. ) Can be adjusted to adjust the internal pressure, which is the pressure of the deposition material inside the crucible, and by providing the second inner plate module 750, when at least one orifice 600 is disposed, the nozzle 200 ), it is possible to adjust the evaporation amount of the evaporation material inside the crucible without changing the diameter of the nozzle using the auxiliary pipe or using a method of replacing the nozzle.

7 is an exploded perspective view showing an inner plate unit according to a second embodiment of the present invention.

Hereinafter, a method of changing the open area of the nozzle 200 by the orifice 600 and the second inner plate module 750 ′ according to the second embodiment of the present invention will be described in detail with reference to FIG. 7. .

In the second embodiment of the present invention, compared to the first embodiment, all other structures and functions are as described above except that the shape of the orifice 600 ′ and the shape of the second inner plate module 750 ′ are different. Since they are the same, only the differences will be explained.

First, looking at the shape of the orifice 600 ′, the locking part 630 ′ is a circular locking part 630 ′ provided in a circular shape having a diameter larger than that of the tubular part arranging hole 761, and the orifice support plate 760 ′. ) Includes a circular locking protrusion 762 provided at the edge of the tubular part arranging hole 761 and supporting the circular locking part 631.

In the second embodiment, the orifice 600 ′ disposed in the tubular part arranging hole 761 is not able to move relative to the orifice support plate 760 ′, and the nozzle 200 is replaced by replacing the orifice 600 ′. ) Differs from the first embodiment in that it changes the open area.

In detail, by exchanging and disposing at least one orifice 600 ′ having a predetermined inner diameter on the circular locking projection 762 of the orifice support plate 760 ′, Since the size can be changed and the open area of the nozzle 200 can be changed according to the size of the second evaporation material passing hole 613, it is possible to change the diameter of the nozzle or change the nozzle using an auxiliary pipe. It is possible to control the evaporation amount of the evaporation material inside the crucible without using a method.

As described above, the present invention is not limited to the described embodiments, and it is obvious to those of ordinary skill in the art that various modifications and variations can be made without departing from the spirit and scope of the present invention. Therefore, such modifications or variations will have to belong to the scope of the claims of the present invention.

1: high temperature deposition source 2: process chamber
10: evaporation material 100: crucible
200: nozzle 600: orifice
610: tubular part 613: second evaporation material through hole
630: locking part 700: inner plate module
710: first inner plate module 720: first inner plate main body
730: first inner plate internal pressure control unit 731: coupling skirt
732: plate body 733: first evaporation material through hole
750: second inner plate module 760: orifice support plate
761: tubular part arranging hole 762: circular locking jaw
763: guide groove 770: support skirt portion

Claims (16)

A crucible having a deposition material;
A nozzle disposed on one side of the crucible to discharge the evaporated deposition material; And
At least a portion of the crucible is coupled to one side of the crucible so as to be disposed inside the crucible, at least one orifice communicating with the nozzle, and a first deposition material passing hole through which the deposition material first passes It is provided, and includes an inner plate unit having an inner plate module capable of adjusting a separation distance from the orifice to the through hole of the first deposition material,
The inner plate module,
A first inner plate module spaced apart from the orifice by a predetermined distance toward the deposition material, the first deposition material passage hole is provided, and the separation distance from the orifice to the first deposition material passage hole is adjustable; And
A second inner plate module coupled to the first inner plate module, wherein at least one orifice is disposed,
The first inner plate module,
A first body having a body portion disposed to contact the inner wall of the crucible by a predetermined distance from the upper end portion of the crucible, and a flange portion provided at the upper end portion of the body portion and provided to be engaged with the upper end portion of the crucible. 1 inner plate body; And
The first deposition material passage hole is provided in a predetermined area, and is coupled to the lower end of the body portion, and is capable of adjusting a separation distance from the orifice to the first deposition material passage hole by changing a position coupled to the body portion. 1 High-temperature deposition source comprising an inner plate pressure control unit. delete delete The method of claim 1,
The first inner plate internal pressure control unit,
A coupling skirt having a predetermined height to be coupled to and in contact with the inner wall of the body portion; And
And a plate body coupled to one end of the coupling skirt to block passage of the deposition material, but having at least one first deposition material passage hole provided in a predetermined region. The method of claim 4,
A coupling hole is provided on one side of any one selected from the body portion or the coupling skirt,
On the other side selected from the body portion or the coupling skirt, there is a height adjustment coupling hole having a vertical long hole shape disposed at a position corresponding to the coupling hole so that the relative position of the plate body with respect to the body portion can be adjusted. High temperature deposition source, characterized in that provided. The method of claim 4,
The first inner plate module,
The first inner plate internal pressure control part is defective in the first inner plate body so that the coupling skirt is disposed at a position close to the orifice and the plate body is disposed at a position far from the orifice, so that the first deposition from the orifice High-temperature evaporation source, characterized in that controlling the separation distance to the material through hole. The method of claim 4,
The first inner plate module,
The first inner plate internal pressure adjusting part is defective in the first inner plate body so that the plate body is disposed at a position close to the orifice and the coupling skirt is disposed at a position far from the orifice, so that the first deposition from the orifice High-temperature evaporation source, characterized in that controlling the separation distance to the material through hole. The method of claim 1,
Wherein the second inner plate module is provided to change an open area of the nozzle when the at least one orifice is disposed. The method of claim 8,
The orifice,
A tubular portion in which a second deposition material passing hole having a predetermined inner diameter is formed; And
And a locking portion coupled to an upper end of the tubular portion and engaging with one side of the second inner plate module. The method of claim 9,
The second inner plate module,
An orifice support plate in which a tubular portion arranging hole in which the tubular portion is disposed is formed; And
And a support skirt portion coupled to the orifice support plate and engaged with an upper end portion of the first inner plate module. The method of claim 10,
The locking portion is a circular locking portion provided in a circular shape having a larger diameter than the tubular portion arrangement hole,
The orifice support plate,
A high-temperature deposition source comprising a circular locking protrusion provided at an edge of the tubular part arrangement hole to support the circular locking part. The method of claim 11,
The high temperature deposition source, characterized in that the opening area of the nozzle is changed by exchanging and disposing at least one orifice having a predetermined inner diameter on the circular locking protrusion of the orifice support plate. The method of claim 10,
The tubular part placement hole,
It is provided in the form of a long hole so as to be able to move relative to the state disposed through the tubular portion,
The high-temperature deposition source, characterized in that the opening area of the nozzle is changed by placing the tubular portion by moving relative to the tubular portion arranging hole in the form of a long hole. The method of claim 13,
The orifice support plate,
A high-temperature deposition source, comprising: a guide groove provided at an edge of the tubular portion arrangement hole to support the locking portion, and guide relative movement while the locking portion is engaged. The method of claim 14,
The locking part is a rectangular locking part provided in a square shape having an area larger than that of the tubular part arranging hole,
The guide groove is a high-temperature deposition source, characterized in that the rectangular guide groove is formed to be elongated along the relative movement direction of the rectangular locking portion to guide the relative movement of the rectangular locking portion. The method of claim 15,
A coupling hole is provided at one side of any one selected from the square locking part or the square guide groove,
On the other side selected from the rectangular engaging portion or the rectangular guide groove, a long-hole-shaped position-adjusting coupling hole disposed at a position corresponding to the coupling hole is provided so as to adjust the relative position of the orifice with respect to the nozzle. High temperature evaporation source.

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