JPS63173944A - Moisture sensor - Google Patents
Moisture sensorInfo
- Publication number
- JPS63173944A JPS63173944A JP62005846A JP584687A JPS63173944A JP S63173944 A JPS63173944 A JP S63173944A JP 62005846 A JP62005846 A JP 62005846A JP 584687 A JP584687 A JP 584687A JP S63173944 A JPS63173944 A JP S63173944A
- Authority
- JP
- Japan
- Prior art keywords
- humidity
- sol
- humidity sensor
- circuit
- dispersed
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims abstract description 13
- 239000000758 substrate Substances 0.000 claims abstract description 10
- 230000003321 amplification Effects 0.000 claims abstract description 9
- 238000003199 nucleic acid amplification method Methods 0.000 claims abstract description 9
- 239000002245 particle Substances 0.000 claims abstract description 8
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims abstract description 7
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 7
- 239000010703 silicon Substances 0.000 claims abstract description 7
- -1 silicon alkoxide Chemical class 0.000 claims abstract description 7
- 229910052799 carbon Inorganic materials 0.000 claims abstract description 6
- 239000000377 silicon dioxide Substances 0.000 claims abstract description 6
- 230000003301 hydrolyzing effect Effects 0.000 claims abstract description 5
- 230000010355 oscillation Effects 0.000 claims abstract description 5
- 125000000217 alkyl group Chemical group 0.000 claims abstract 2
- 238000001514 detection method Methods 0.000 claims description 13
- 239000011521 glass Substances 0.000 claims description 2
- 239000011148 porous material Substances 0.000 claims 1
- 239000000843 powder Substances 0.000 abstract description 4
- 238000001035 drying Methods 0.000 abstract description 3
- RMAQACBXLXPBSY-UHFFFAOYSA-N silicic acid Chemical compound O[Si](O)(O)O RMAQACBXLXPBSY-UHFFFAOYSA-N 0.000 abstract description 2
- 238000010586 diagram Methods 0.000 description 7
- 239000000919 ceramic Substances 0.000 description 5
- BOTDANWDWHJENH-UHFFFAOYSA-N Tetraethyl orthosilicate Chemical compound CCO[Si](OCC)(OCC)OCC BOTDANWDWHJENH-UHFFFAOYSA-N 0.000 description 4
- 238000003756 stirring Methods 0.000 description 4
- 238000009833 condensation Methods 0.000 description 3
- 230000005494 condensation Effects 0.000 description 3
- 238000005259 measurement Methods 0.000 description 3
- 239000002952 polymeric resin Substances 0.000 description 3
- 230000035945 sensitivity Effects 0.000 description 3
- 229920003002 synthetic resin Polymers 0.000 description 3
- VEXZGXHMUGYJMC-UHFFFAOYSA-N Hydrochloric acid Chemical compound Cl VEXZGXHMUGYJMC-UHFFFAOYSA-N 0.000 description 2
- 229920001940 conductive polymer Polymers 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 239000012528 membrane Substances 0.000 description 2
- 238000000034 method Methods 0.000 description 2
- 229920005597 polymer membrane Polymers 0.000 description 2
- 238000005245 sintering Methods 0.000 description 2
- VHUUQVKOLVNVRT-UHFFFAOYSA-N Ammonium hydroxide Chemical compound [NH4+].[OH-] VHUUQVKOLVNVRT-UHFFFAOYSA-N 0.000 description 1
- 235000006693 Cassia laevigata Nutrition 0.000 description 1
- 241000735631 Senna pendula Species 0.000 description 1
- 235000011114 ammonium hydroxide Nutrition 0.000 description 1
- 239000006229 carbon black Substances 0.000 description 1
- 239000003795 chemical substances by application Substances 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 239000003792 electrolyte Substances 0.000 description 1
- 239000007789 gas Substances 0.000 description 1
- WABPQHHGFIMREM-UHFFFAOYSA-N lead(0) Chemical compound [Pb] WABPQHHGFIMREM-UHFFFAOYSA-N 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 229910044991 metal oxide Inorganic materials 0.000 description 1
- 150000004706 metal oxides Chemical class 0.000 description 1
- 238000002156 mixing Methods 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 229940124513 senna glycoside Drugs 0.000 description 1
- 238000001179 sorption measurement Methods 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
Landscapes
- Investigating Or Analyzing Materials By The Use Of Fluid Adsorption Or Reactions (AREA)
- Non-Adjustable Resistors (AREA)
Abstract
Description
【発明の詳細な説明】
〔産業上の利用分野〕
本発明は、相対湿度の変化を、多孔質湿度センナの電気
抵抗変化として検出し、アナログ信号の変化として出力
する湿度検出器に関する。DETAILED DESCRIPTION OF THE INVENTION [Field of Industrial Application] The present invention relates to a humidity detector that detects a change in relative humidity as a change in electrical resistance of a porous humidity sensor and outputs it as a change in an analog signal.
従来、相対湿度の変化を、素子の電気的特性の変化とし
て検出する湿度センサには、電解質糸。Conventionally, humidity sensors that detect changes in relative humidity as changes in the electrical characteristics of an element use an electrolyte thread.
有機物系、金属系、金属酸化物系があり、現在実用化さ
れているものは、吸湿性高分子樹脂中に導電性粉末を混
合した結露センサ、導電性高分子膜による湿度センサ、
Ｚ ｎ Ｏｒ、ｏ、−ＬｉＺｎＶＯ４系セラミック湿度
センサ、Ｔｉｅ、−４，０，Ｊセラミック湿度センナ等
がある０ｇ＆湿性高分子樹脂中に導電性粉末混合した結
露センナは、高分子樹脂が吸湿すると膨張し、導電性粉
末の粒子間距離が増加し、抵抗値が増加するもので、一
定の湿度になると急激な抵抗増加を起こす性質を利用し
たものである。導電性高分子膜およびセラミック系湿度
センサは、水の吸着により素子の抵抗値が指数関数的に
減少する性質を利用したものである〔発明が解決しよう
とする問題点〕
しかし従来技術では、結露センサは広範囲の湿度測定が
できず、高分子膜湿度センナは６０℃以上での測定がで
きない、また、高分子膜、セラミック系湿度センサ共に
低湿度域で精度が悪化するという欠点があった。セラミ
ック系湿度センナの中には一定時間ごとに数１００ｔｌ
まで加熱する必要のあるものが使用されていたが、これ
らのセンサは、可燃性蒸気、またはガスの存在する場所
では使用できない。さらにいずれのセンナも、高温多湿
の環境で長時間使用すると劣化してしまう。There are organic, metal, and metal oxide types, and the ones currently in practical use include dew condensation sensors that mix conductive powder into hygroscopic polymer resin, humidity sensors that use conductive polymer membranes,
Z n Or, o, -LiZnVO4 ceramic humidity sensor, Tie, -4,0, J ceramic humidity sensor, etc. 0g & condensation sensor made by mixing conductive powder in humid polymer resin expands when the polymer resin absorbs moisture. However, as the distance between particles of the conductive powder increases, the resistance value increases, and this method takes advantage of the property of causing a rapid increase in resistance when the humidity reaches a certain level. Conductive polymer membrane and ceramic humidity sensors utilize the property that the resistance value of the element decreases exponentially due to water adsorption [Problem to be solved by the invention] However, with conventional technology, condensation Sensors cannot measure humidity over a wide range, polymer membrane humidity sensors cannot measure at temperatures above 60° C., and both polymer membrane and ceramic humidity sensors have the disadvantage that their accuracy deteriorates in low humidity regions. Some ceramic humidity sensors generate several hundred liters at regular intervals.
However, these sensors cannot be used in the presence of flammable vapors or gases. Furthermore, both types of senna deteriorate when used for long periods in hot and humid environments.
そこで本発明はこの様な問題点を解決するもので、その
目的とするところは、高温多湿な環境で長期の使用が可
能で、広範囲の湿度を精度よく測定することが可能な湿
度検出器を提供するところにある。The present invention is intended to solve these problems, and its purpose is to provide a humidity detector that can be used for long periods of time in hot and humid environments and that can accurately measure humidity over a wide range. It's there to provide.
（１） 本発明の湿度検出器は、ガラス中に導電性粒
子を分散させた多孔質体のセンサを用いた湿度検出器に
おいて、
（ａ）シリコンアルコキシド（Ｓｉ（ＯＲ）＋、Ｒ：ア
ルキル基）を加水分解したゾルに微粉末シリカを分散さ
せ、塩基を加えてｐＨ値を３〜６に調整してゲル化させ
乾燥させた基板上に、シリコンアルコキシド中に炭素粒
子を分散させたゾルの支間を構成し、ゲル化させ乾燥、
焼結した湿度センサ。(1) The humidity sensor of the present invention is a humidity sensor using a porous sensor in which conductive particles are dispersed in glass. ), finely powdered silica is dispersed in a sol prepared by hydrolyzing silica, and a base is added to adjust the pH value to 3 to 6 to form a gel. A sol prepared by dispersing carbon particles in silicon alkoxide is placed on a substrate that is dried. Configure the span, gel it and dry it,
Sintered humidity sensor.
（Ａ）前記湿度センナをフィードバック抵抗として用い
前記湿度センサの抵抗値変化によって増幅率が変化する
構成の検出アンプ回路。(A) A detection amplifier circuit having a configuration in which the humidity sensor is used as a feedback resistor and the amplification factor changes according to a change in the resistance value of the humidity sensor.
（Ｃ）前記検出アンプ回路の信号源となる発振回路。(C) An oscillation circuit that serves as a signal source for the detection amplifier circuit.
（ｄ）前記検出アンプ回路の出力信号を整流する整流回
路。(d) A rectifier circuit that rectifies the output signal of the detection amplifier circuit.
（ｅ）前記整流回路の出力信号を対数増幅し、前記湿度
センナによって検出された相対湿度の変化に比例した大
きさの信号を出力する対数増幅回路から構成されること
を特、徴とする。(e) It is characterized by comprising a logarithmic amplification circuit that logarithmically amplifies the output signal of the rectifier circuit and outputs a signal having a magnitude proportional to a change in relative humidity detected by the humidity sensor.
本発明の湿度検出器は、石英ガラス中に炭素粉末を分散
させた多孔質体を湿度センナとして測定環境中に設置し
、湿度センサをライ−ドパツク抵抗として用い、湿度セ
ンサのＭＥ気低抵抗変化により増幅率の変化する検出ア
ンプを構成し、検出アンプ入力に発振回路から一定振幅
、周波数の信号を与え、検出アンプ出力を整流した後に
対数増幅回路に入力することによって、測定環境中の湿
度変化に比例して変化する出力信号が得られる。The humidity detector of the present invention uses a porous body in which carbon powder is dispersed in quartz glass as a humidity sensor in a measurement environment, and uses the humidity sensor as a lead pack resistance. A detection amplifier with varying amplification factor is configured, a signal with a constant amplitude and frequency is applied from an oscillation circuit to the detection amplifier input, and the output of the detection amplifier is rectified and then input to the logarithmic amplifier circuit to detect humidity changes in the measurement environment. An output signal that changes in proportion to is obtained.
以下本発明について図面に基づいて詳細に説明する。 The present invention will be explained in detail below based on the drawings.
第１図は本発明の湿度検出器のブロック図で、発振回路
１は一定の振幅、周波数の信号を出力する。検出アンプ
２は湿度センサ３の抵抗値によって増幅率が変化する増
幅回路、整流回路４は交流を直流に変換する回路、対数
増幅回路５は出力信号が入力信号の対数値に比例して変
化する回路である。第２図は、検出アンプの回路図で、
増幅率Ｇは次式で与えられる。FIG. 1 is a block diagram of a humidity detector according to the present invention, in which an oscillation circuit 1 outputs a signal with a constant amplitude and frequency. The detection amplifier 2 is an amplifier circuit whose amplification factor changes depending on the resistance value of the humidity sensor 3, the rectifier circuit 4 is a circuit that converts alternating current to direct current, and the logarithmic amplifier circuit 5 has an output signal that changes in proportion to the logarithm value of the input signal. It is a circuit. Figure 2 is a circuit diagram of the detection amplifier.
The amplification factor G is given by the following formula.
Ｇ ＝ Ｒｓ ／ Ｒ１
湿度センサ２は、湿度変化によって抵抗値が変化するた
め、検出アンプの増幅率が湿度変化に対応して変化する
。G = Rs / R1 Since the resistance value of the humidity sensor 2 changes with changes in humidity, the amplification factor of the detection amplifier changes in response to changes in humidity.
つぎに本発明の湿度センサの試料の製法について説明す
る。Next, a method for manufacturing a sample of the humidity sensor of the present invention will be explained.
テトラエトキシシラン（５ｉ（ＯＯＩＨり４ ）２００
ｍｔに０．０２Ｎ塩ｆｊ３１６２ｍｔを加え、１時間攪
拌した後、テトラエトキシシランを加水分解すると透明
で均一なゾルが得られる。このゾルに微粉末シリカ６６
ｆを加え、３０分間攪拌し、微粉末シリカを分散させる
と白色で均一なゾルが得られる。このゾルに１１Ｎアン
モニア水を滴下してＰＨ値を５に調整すると約１時間′
後にゲル化した。このゲルを６０℃で１週間乾燥した乾
燥ゲルが基板材料と、なる。Tetraethoxysilane (5i (OOIHri4) 200
After adding 0.02N salt fj3162mt to mt and stirring for 1 hour, tetraethoxysilane is hydrolyzed to obtain a transparent and uniform sol. Finely powdered silica 66 is added to this sol.
Add f and stir for 30 minutes to disperse the finely powdered silica to obtain a white, uniform sol. When 11N ammonia water is added dropwise to this sol and the pH value is adjusted to 5, it takes about 1 hour.
It later gelled. The dried gel obtained by drying this gel at 60° C. for one week serves as the substrate material.
次に、テトラエトキシシラン２００ｍｔに（ＬＯ２Ｎ塩
酸６５ｍ１を加え、１時間攪拌し、テトラエトキシシラ
ンを加水分解すると透明で均一なゾルが得られる。この
ゾルにカーボンブチツク１１ＩＬ８？を加え、３０分間
攪拌し、カーボンブラックを分散させると黒色で均一な
ゾルが得られる。このゾルを前記基板上に皮膜状にゲル
化させ、６０℃で２４時間乾燥させた後、焼結炉に入れ
、１ ’Ｉ’Ｏｒｒ以下の真空度で１２００℃に加熱し
、１２００℃で１時間保持した。得られた基板上の皮膜
に電極を付け、第３図に示す湿度センサを製作した。第
３図において、３１は焼結膜、３２は電極、３３はリー
ド線、５４は基板である。第４図は、本湿度センサの感
湿特性図である。Next, add LO2N hydrochloric acid (65ml) to 200mt of tetraethoxysilane, stir for 1 hour, and hydrolyze the tetraethoxysilane to obtain a transparent and uniform sol.Add Carbon Butic 11IL8? to this sol and stir for 30 minutes. Then, when carbon black is dispersed, a black and uniform sol is obtained.This sol is gelled into a film on the substrate, dried at 60°C for 24 hours, placed in a sintering furnace, and heated at 1'I. It was heated to 1200°C in a vacuum of less than 'Orr and held at 1200°C for 1 hour. Electrodes were attached to the film on the obtained substrate to fabricate the humidity sensor shown in Figure 3. In Figure 3, 31 32 is a sintered film, 32 is an electrode, 33 is a lead wire, and 54 is a substrate. FIG. 4 is a diagram showing the humidity sensitivity characteristics of this humidity sensor.
以上述べたように本発明の湿度検出器は、湿度センナと
して、シリコンアルコキシドを加水分解したゾルに、炭
素粒子を分散させ、該ゾルを、シリカゾルをゲル化、乾
燥させて製造した基板上に皮膜状にゲル化させ、乾燥、
焼結して得られた湿度センサを用いるので、高温高湿な
環境で長時間使用を続けても安定した特性を示し、また
、炭素粒子（実施例ではカーボンブラック）の含有社に
より湿度センナの感湿特性を広範囲に変化させることが
出来るので、従来測定が困難であった低湿度域での測定
を高精度に行うことが可能である。As described above, the humidity sensor of the present invention is a humidity sensor in which carbon particles are dispersed in a sol obtained by hydrolyzing silicon alkoxide, and the sol is coated on a substrate manufactured by gelling and drying a silica sol. gelatinized, dried,
Since a humidity sensor obtained by sintering is used, it exhibits stable characteristics even when used for a long time in a high temperature and high humidity environment. Since the moisture sensitivity characteristics can be varied over a wide range, it is possible to perform measurements with high precision in low humidity regions, which have been difficult to measure in the past.
また、本発明で用いた湿度センサはきわめて安価なため
に、従来の湿度検出器に比べて低コストな湿度検出器が
実現できる。Furthermore, since the humidity sensor used in the present invention is extremely inexpensive, a humidity detector can be realized at a lower cost than conventional humidity detectors.
第１図は、本発明の湿度検出器のブロック図。 第２図は、検出アンプの回路図。 第３図は、湿度センサの構造図。 第４図は、湿度センサの感湿特性図。 以上 出願人 セイコーエプソン株式会社 代理人 弁理士最上筋（他１名） 第３ノ FIG. 1 is a block diagram of the humidity detector of the present invention. FIG. 2 is a circuit diagram of the detection amplifier. FIG. 3 is a structural diagram of the humidity sensor. FIG. 4 is a diagram showing the humidity sensitivity characteristics of the humidity sensor. that's all Applicant: Seiko Epson Corporation Agent: Patent Attorney Mogamisuji (1 other person) 3rd no.
Claims (1)
ンサを用いた湿度検出器において、 （ａ）シリコンアルコキシド（Ｓｉ（ＯＲ）＿４、Ｒ：
アルキル基）を加水分解したゾルに微粉末シリカを分散
させ、塩基を加えてＰＨ値を３〜６に調整してゲル化さ
せ乾燥させた基板上に、シリコンアルコキシド中に炭素
粒子を分散させたゾルの皮膜を構成し、ゲル化させ乾燥
、焼結した湿度センサ。 （ｂ）前記湿度センサをフィードバック抵抗として用い
、前記湿度センサの抵抗値変化によりて増幅率が変化す
る構成の検出アンプ回路。 （ｃ）前記検出アンプ回路の信号源となる発振回路。 （ｄ）前記検出アンプ回路の出力信号を整流する整流回
路。 （ｅ）前記整流回路の出力信号を対数増幅し、前記湿度
センサによって検出された相対湿度の変化に比例した大
きさの信号を出力する対数増幅回路から構成されること
を特徴とする湿度検出器。(1) In a humidity detector using a sensor made of a porous material in which conductive particles are dispersed in glass, (a) Silicon alkoxide (Si(OR)_4, R:
Finely powdered silica was dispersed in a sol prepared by hydrolyzing alkyl groups), and a base was added to adjust the pH value to 3 to 6 to form a gel. Carbon particles were dispersed in silicon alkoxide on a substrate that was dried. A humidity sensor made of a sol film that is gelled, dried, and sintered. (b) A detection amplifier circuit having a configuration in which the humidity sensor is used as a feedback resistor, and the amplification factor changes according to a change in the resistance value of the humidity sensor. (c) An oscillation circuit that serves as a signal source for the detection amplifier circuit. (d) A rectifier circuit that rectifies the output signal of the detection amplifier circuit. (e) A humidity detector comprising a logarithmic amplification circuit that logarithmically amplifies the output signal of the rectifier circuit and outputs a signal having a magnitude proportional to a change in relative humidity detected by the humidity sensor. .
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP62005846A JPS63173944A (en) | 1987-01-13 | 1987-01-13 | Moisture sensor |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP62005846A JPS63173944A (en) | 1987-01-13 | 1987-01-13 | Moisture sensor |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS63173944A true JPS63173944A (en) | 1988-07-18 |
Family
ID=11622373
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP62005846A Pending JPS63173944A (en) | 1987-01-13 | 1987-01-13 | Moisture sensor |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS63173944A (en) |
-
1987
- 1987-01-13 JP JP62005846A patent/JPS63173944A/en active Pending
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