JPH02260506A - Humidity sensor - Google Patents

Humidity sensor

Info

Publication number
JPH02260506A
JPH02260506A JP1081086A JP8108689A JPH02260506A JP H02260506 A JPH02260506 A JP H02260506A JP 1081086 A JP1081086 A JP 1081086A JP 8108689 A JP8108689 A JP 8108689A JP H02260506 A JPH02260506 A JP H02260506A
Authority
JP
Japan
Prior art keywords
humidity
dispersed
nitride particles
film
silica
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP1081086A
Other languages
Japanese (ja)
Inventor
Masahisa Ikejiri
昌久 池尻
Michio Yanagisawa
通雄 柳澤
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Seiko Epson Corp
Original Assignee
Seiko Epson Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Seiko Epson Corp filed Critical Seiko Epson Corp
Priority to JP1081086A priority Critical patent/JPH02260506A/en
Publication of JPH02260506A publication Critical patent/JPH02260506A/en
Pending legal-status Critical Current

Links

Landscapes

  • Investigating Or Analyzing Materials By The Use Of Fluid Adsorption Or Reactions (AREA)
  • Non-Adjustable Resistors (AREA)

Abstract

PURPOSE:To obtain a high-reliability humidity sensor which can measure humidity in a wide range with high accuracy and is not deteriorated in a several environment by using a silica film in which silica nitride particles are dispersed as a humidity sensitive film. CONSTITUTION:An alumina substrate 1 is subjected to the dip-coating with a silica sol in which silicon nitride particles are dispersed, followed by drying at 100 deg.C for 10 minutes and sintering at 450 deg.C for 30 minutes, resulting in a silica film 3 in which silicon nitride particles are dispersed. Accordingly, the linearity of the variation of resistance value according to the variation of relative humidity is good and this sensor shows a resistance which is easy to be measure even if humidity is low which causes a high resistance. Also, the film- thickness, pore diameters, state of cracks, etc., can be controlled. Thus, a high- accuracy and high-reliability humidity sensor which is not deteriorated in a severe environment can be obtained.

Description

【発明の詳細な説明】 [産業上の利用分野] 本発明は、湿度に対応して素子の電気的特性が変化する
ことにより湿度を検出する湿度センサに関する。
DETAILED DESCRIPTION OF THE INVENTION [Field of Industrial Application] The present invention relates to a humidity sensor that detects humidity by changing the electrical characteristics of an element in response to humidity.

[従来の技術] 近年、湿度計測、湿度制御を必要とする分野が増加し、
湿度センサの重要性が認められるようになった。
[Conventional technology] In recent years, the number of fields requiring humidity measurement and humidity control has increased.
The importance of humidity sensors is now recognized.

湿度に対応して素子の電気的特性が変化することにより
湿度を検出する湿度センサには、電解質系、金属系、高
分子系、セラミックス系等があり、それぞれいろいろな
系が研究されているが、現在実用化されているものは、
高分子系およびセラミックス系の湿度センサである。い
ずれも、素子に対する水の吸脱着により、素子の抵抗値
または静電容量が変化する性質を利用したものである。
Humidity sensors that detect humidity by changing the electrical characteristics of the element in response to humidity include electrolyte-based, metal-based, polymer-based, ceramic-based, etc., and various systems are being researched. , those currently in practical use are:
These are polymer-based and ceramic-based humidity sensors. All of these utilize the property that the resistance value or capacitance of the element changes due to adsorption and desorption of water to the element.

[発明が解決しようとする課題] しかし、従来の湿度センサは、高湿度、低湿度で精度が
悪く、高温高温の環境で長期間使用すると劣化してしま
うという欠点があった。特に、高分子系湿度センサは、
高温高温中での劣化が顕著である。セラミックス系湿度
センサには、一定時間毎に素子を数100℃に加熱し、
劣化した特性を回復させる、加熱リフレッシュという機
構を設けた製品がある。この場合、加熱リフレッシュに
より経時変化は小さくできるが、素子が高温になるため
、可燃性のガスや粉塵の存在するところでは爆発や火災
の危険があり使用できない。このように、満足すべき特
性を持つ湿度センサは、現状では皆無であるといっても
過言ではない。
[Problems to be Solved by the Invention] However, conventional humidity sensors have the disadvantage that they have poor accuracy in high humidity and low humidity, and deteriorate when used for long periods in high temperature environments. In particular, polymer-based humidity sensors
Deterioration is noticeable at high temperatures. For ceramic humidity sensors, the element is heated to several hundred degrees Celsius at regular intervals.
Some products are equipped with a heating refresh mechanism that restores deteriorated properties. In this case, aging can be reduced by heating and refreshing, but since the element becomes high temperature, it cannot be used in areas where flammable gas or dust is present due to the risk of explosion or fire. It is no exaggeration to say that there are currently no humidity sensors with satisfactory characteristics.

そこで本発明はこのような問題点を解決するもので、そ
の目的とするところは、広範囲の湿度を精度良く測定で
き、過酷な環境でも劣化しない、高精度でかつ信頼性の
高い湿度センサを提供するところにある。
The present invention aims to solve these problems, and its purpose is to provide a highly accurate and reliable humidity sensor that can accurately measure humidity over a wide range and does not deteriorate even in harsh environments. It's there.

[課題を解決するための手段] 本発明の湿度センサは、窒化珪素粒子を分散させたシリ
カ膜を感湿膜として用いることを特徴とする。
[Means for Solving the Problems] The humidity sensor of the present invention is characterized in that a silica film in which silicon nitride particles are dispersed is used as a moisture-sensitive film.

シリカ膜単体でも感湿特性を持たせることはできる。し
かし、シリカ膜に窒化珪素粒子を分散させることにより
、膜厚、細孔径、クラックの状態等を制御でき、より好
ましい特性を持った湿度センサを得ることができる。
A silica film alone can have moisture-sensitive properties. However, by dispersing silicon nitride particles in a silica film, the film thickness, pore diameter, crack state, etc. can be controlled, and a humidity sensor with more preferable characteristics can be obtained.

[実施例] テトラエトキシシラン(S i (OC2Hs)4) 
50m1にエタノール25m1,0.02N塩酸4ml
を加え、1時間撹拌することによりテトラエトキシシラ
ンを加水分解した後、グリセリン10ml、微粉末シ「
へカ13.5gを加え、30分間撹拌し、さらに窒化珪
素粒子10.5gを加え、30分間撹拌することにより
、窒化珪素粒子を分散させたシリカゾルを作製した。P
t−Pd櫛形電極をスクリーン印刷により形成したアル
ミナ基板上に、このゾルをデイツプコーティングし、1
00℃で10分間乾燥し、450°Cで30分間焼結し
、窒化珪素粒子を分散させたシリカ膜を形成した。
[Example] Tetraethoxysilane (S i (OC2Hs)4)
50ml 25ml ethanol, 4ml 0.02N hydrochloric acid
was added and stirred for 1 hour to hydrolyze the tetraethoxysilane, followed by 10 ml of glycerin and finely powdered silicone.
A silica sol in which silicon nitride particles were dispersed was prepared by adding 13.5 g of heka and stirring for 30 minutes, and then adding 10.5 g of silicon nitride particles and stirring for 30 minutes. P
This sol was dip-coated on an alumina substrate on which a t-Pd comb-shaped electrode was formed by screen printing.
It was dried at 00°C for 10 minutes and sintered at 450°C for 30 minutes to form a silica film in which silicon nitride particles were dispersed.

このようにして製作した湿度センサの断面図を第1図に
示す。第1図において、1は基板、2は電極、3は窒化
珪素粒子を分散させたシリカ膜である。本湿度センサの
感湿特性を第2図に示す。
A cross-sectional view of the humidity sensor manufactured in this manner is shown in FIG. In FIG. 1, 1 is a substrate, 2 is an electrode, and 3 is a silica film in which silicon nitride particles are dispersed. Figure 2 shows the humidity sensitivity characteristics of this humidity sensor.

第2図より、相対湿度の変化に対する抵抗値の変化の直
線性が良く、抵抗値が大きくなる低湿度でも測定し易い
抵抗値であることがわかる。本温度センサを60℃、相
対湿度95%の恒温恒温層中に1000時間放置後、感
湿特性を測定したところ、第2図と測定誤差の範囲内で
同様であった。
From FIG. 2, it can be seen that the linearity of the change in resistance value with respect to the change in relative humidity is good, and the resistance value is easy to measure even at low humidity where the resistance value becomes large. After this temperature sensor was left in a constant temperature constant temperature layer at 60° C. and 95% relative humidity for 1000 hours, the moisture sensitivity characteristics were measured, and the results were the same as in FIG. 2 within the range of measurement error.

したがって、本温度センサは、耐久性、信頼性が高いこ
とがわかる。
Therefore, it can be seen that this temperature sensor has high durability and reliability.

[発明の効果] 以上述べたように本発明の湿度センサは、窒化珪素粒子
を分散さ、せたシリカ膜を感湿膜として用いるので、相
対湿度の変化に対する抵抗値の変化の直線性が良く、抵
抗値が大きくなる低湿度でも測定し易い抵抗値の湿度セ
ンサを製造することができるため、広範囲の湿度を精度
良く測定することができる。また、シリカ膜は化学的に
安定であるため、過酷な環境でも劣化しない。したがっ
て、高精度、高信頼性湿度センサとして、湿度計測、湿
度制御を必要とする分野に広く応用することができる。
[Effects of the Invention] As described above, since the humidity sensor of the present invention uses a silica film in which silicon nitride particles are dispersed as a humidity sensitive film, the change in resistance value has good linearity with respect to changes in relative humidity. Since it is possible to manufacture a humidity sensor with a resistance value that is easy to measure even at low humidity where the resistance value becomes large, it is possible to accurately measure humidity over a wide range. Furthermore, since silica membranes are chemically stable, they do not deteriorate even in harsh environments. Therefore, as a highly accurate and highly reliable humidity sensor, it can be widely applied to fields requiring humidity measurement and humidity control.

2・・・電極 3・・・窒化珪素粒子を分散させたシリカ膜第2図は、
本発明の湿度センサの感湿特性図。
2...Electrode 3...A silica film in which silicon nitride particles are dispersed.
FIG. 3 is a diagram of humidity sensitivity characteristics of the humidity sensor of the present invention.

以上 出願人 セイコーエプソン株式会社 代理人 弁理士 銘木 喜三部 他1名that's all Applicant: Seiko Epson Corporation Agent: Patent attorney Kisanbe Kisanbe and 1 other person

【図面の簡単な説明】[Brief explanation of drawings]

第1図は本発明の湿度センサの断面図。 1・・・基板 FIG. 1 is a sectional view of the humidity sensor of the present invention. 1... Board

Claims (1)

【特許請求の範囲】[Claims]  窒化珪素粒子を分散させたシリカ膜を感湿膜として用
いることを特徴とする湿度センサ。
A humidity sensor characterized in that a silica film in which silicon nitride particles are dispersed is used as a humidity sensitive film.
JP1081086A 1989-03-31 1989-03-31 Humidity sensor Pending JPH02260506A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP1081086A JPH02260506A (en) 1989-03-31 1989-03-31 Humidity sensor

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP1081086A JPH02260506A (en) 1989-03-31 1989-03-31 Humidity sensor

Publications (1)

Publication Number Publication Date
JPH02260506A true JPH02260506A (en) 1990-10-23

Family

ID=13736579

Family Applications (1)

Application Number Title Priority Date Filing Date
JP1081086A Pending JPH02260506A (en) 1989-03-31 1989-03-31 Humidity sensor

Country Status (1)

Country Link
JP (1) JPH02260506A (en)

Similar Documents

Publication Publication Date Title
KR940002635B1 (en) Humidity sensor
JPS63103957A (en) Humidity detector
JPH02260503A (en) Humidity sensor
JPH02260506A (en) Humidity sensor
JPH02260502A (en) Humidity sensor
JPH02260504A (en) Humidity sensor
JPH02260505A (en) Humidity sensor
JPS589056A (en) Moisture sensitive resistance element
JP2707246B2 (en) Humidity sensor
JPH02283002A (en) Humidity sensor
JPH02257048A (en) Humidity sensor
JPH02232901A (en) Humidity sensor
JPH0256902A (en) Humidity detector
JPH03242543A (en) Moisture sensor
JPH02132803A (en) Humidity sensor
JPH03295457A (en) Humidity sensor
JPH01183439A (en) Production of humidity sensor
JPH0336702A (en) Humidity sensor
JPH04326053A (en) Moisture sensor
JPS63293458A (en) Method for aging humidity sensor
JPH01321349A (en) Moisture detector
JPH03242544A (en) Moisture sensor
JPH03242545A (en) Moisture sensor
JPS61245049A (en) Humidity sensor
JPH03295456A (en) Humidity sensor