JPS5968101A - Conductive paste - Google Patents

Conductive paste

Info

Publication number
JPS5968101A
JPS5968101A JP17928982A JP17928982A JPS5968101A JP S5968101 A JPS5968101 A JP S5968101A JP 17928982 A JP17928982 A JP 17928982A JP 17928982 A JP17928982 A JP 17928982A JP S5968101 A JPS5968101 A JP S5968101A
Authority
JP
Japan
Prior art keywords
conductive paste
weight
glass frit
melting point
point glass
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP17928982A
Other languages
Japanese (ja)
Other versions
JPH0440803B2 (en
Inventor
狩野 東彦
東 吉正
笠次 徹
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Murata Manufacturing Co Ltd
Original Assignee
Murata Manufacturing Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Murata Manufacturing Co Ltd filed Critical Murata Manufacturing Co Ltd
Priority to JP17928982A priority Critical patent/JPS5968101A/en
Publication of JPS5968101A publication Critical patent/JPS5968101A/en
Publication of JPH0440803B2 publication Critical patent/JPH0440803B2/ja
Granted legal-status Critical Current

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  • Conductive Materials (AREA)

Abstract

(57)【要約】本公報は電子出願前の出願データであるた
め要約のデータは記録されません。
(57) [Summary] This bulletin contains application data before electronic filing, so abstract data is not recorded.

Description

【発明の詳細な説明】 この発明は低温で焼付けが行え、電解メッキなどに十分
耐えることができ、さらに大きな接着強度が得られる導
電性ペーストに関するものである。
DETAILED DESCRIPTION OF THE INVENTION The present invention relates to a conductive paste that can be baked at low temperatures, can sufficiently withstand electrolytic plating, and has even greater adhesive strength.

低温で焼付けできる銀糸の導電性ペーストは、1ニラミ
ツクコンデンサを代表とするセラミック電子部品の電極
とし〔、あるいは自動車のリアウィンドの熱線ヒータな
どにその用途を有し〔いる。
Conductive pastes made of silver threads that can be baked at low temperatures are used as electrodes in ceramic electronic components, such as 1-Niramic capacitors, and are also used in hot wire heaters for automobile rear windows.

そし゛C1焼付は処理することによって得られた導電性
被膜はその表面を保護する目的でメッキ処理に付される
ことがある。これは、そのままの状態で導電性被膜の表
面に半田付けを行うと、銀が半1(1中に拡散し“Cし
まう、いわゆる半田喰われが発生し、基板との接着強度
が劣化しだシ、断線を生じたりすることかあるためであ
る。また導電性被膜の耐候性が弱く、酸rヒや硫化など
により導電性や接着強度などの特性劣化が生じることが
あシ、これを防止するためである。実際には、Cuの電
解メッキ膜やさらにその上にN1の電解メッキ膜をし、
さらKその上にSn、Pb−8nなどの電解メッキ膜を
形成し′Cいる。
The conductive coating obtained by C1 baking is sometimes subjected to plating treatment for the purpose of protecting its surface. This is because if soldering is performed on the surface of the conductive film as it is, silver will diffuse into the conductive film and become "C", which is what is called solder eating, and the adhesive strength with the board will deteriorate. Also, the weather resistance of the conductive coating is weak, and properties such as conductivity and adhesive strength may deteriorate due to acid or arsenic or sulfurization, so prevent this. In reality, a Cu electrolytic plating film and an N1 electrolytic plating film are further applied on top of the Cu electrolytic plating film.
Furthermore, an electrolytic plating film of Sn, Pb-8n, etc. is formed thereon.

また、銀糸の焼付はタイプの導電性被膜中比抵抗が2.
5X10  Ω、ZJl以下の値のものを得ることが困
難であシ、たとえばCuの電解メッキ膜を表面に形成し
、さらに必要に応じてNiの電解メッキ膜を形成するこ
とが行われている。
In addition, when baking silver thread, the specific resistance of the type of conductive coating is 2.
It is difficult to obtain a value of less than 5×10 Ω, ZJl, so for example, an electrolytic plating film of Cu is formed on the surface, and if necessary, an electrolytic plating film of Ni is further formed.

しかしながら、電解メッキ腔を形成する段階で、通常強
酸性メッキ液を使用した場合、導電性被膜中に含まれる
ガラスフリットが酸で溶出する現象が見られた。また導
電性被膜の上に電解メッキ膜が形成する段階で発生する
水素によυ、ガラスフリットが還元されることになシ、
基板と導電性被膜の接着強度が極端に低下するという現
象が見られた。
However, when a strongly acidic plating solution is normally used at the stage of forming the electrolytic plating cavity, a phenomenon has been observed in which the glass frit contained in the conductive film is eluted by the acid. In addition, the glass frit will not be reduced by the hydrogen generated during the formation of the electroplated film on the conductive film.
A phenomenon was observed in which the adhesive strength between the substrate and the conductive film was extremely reduced.

これに対処する方法としC1次に述べるような手段が採
られることが考えられる。
As a way to deal with this, it is conceivable that the following measures may be adopted.

■Pt、 Pa、 Rhなどの、貴−を側ト、カ匝す・
る■AgとPt、Pd、Rhなどの合金粉末を用いる■
導電性被膜の膜厚を15μm以上にする■AutAu中
るかAqとAuの合金粉末を用いるなどである。
■Pt, Pa, Rh, etc., are placed on the side or side.
■Using alloy powders such as Ag and Pt, Pd, Rh, etc.■
The thickness of the conductive film is made to be 15 μm or more. (2) Using Au or an alloy powder of Aq and Au.

しかし1、り、■の方法では導電性被膜の比抵抗を上昇
させることになシ、■、■の方法ではコストアップを招
くことになる。
However, methods 1, 2, and 2 do not increase the specific resistance of the conductive film, and methods 1, 2, and 3 result in an increase in cost.

このほか、メッキ浴のpHを6以上と中性に近いものに
する方法もあるが、メッキ浴組成の管理が難しいという
問題があった。
In addition, there is a method of increasing the pH of the plating bath to 6 or higher, which is close to neutral, but this method poses a problem in that it is difficult to control the plating bath composition.

したがって、この発明は上記した従来の導電性ペースト
が有していた欠点を解消するととを目的とする。
Therefore, an object of the present invention is to eliminate the drawbacks of the conventional conductive pastes described above.

すなわち、この発明の要旨とするところは、銀粉と耐酸
性を有する低融点ガラスフリットとを有機フェスに混練
してなることを特徴とする導電性ペーストである。
That is, the gist of the present invention is a conductive paste characterized by being made by kneading silver powder and acid-resistant, low-melting glass frit into an organic paste.

導電性ペーストに含まれ本銀粉としては、浮腰用焼付ペ
ーストとし゛C平均粒径10μm以下のもの特に平均粒
径5μm以下のものが用いられる。
As the main silver powder contained in the conductive paste, those having an average particle size of 10 μm or less and especially those having an average particle size of 5 μm or less are used as a baking paste for floating waist.

この導電性ペーストにおいて、固形成分である銀粉と耐
酸性を有する低融点ガラスフリットの混合比(重量%)
は75725〜95:5の範囲にあることを要する。
In this conductive paste, the mixing ratio (wt%) of silver powder, which is a solid component, and low melting point glass frit, which has acid resistance.
must be in the range of 75,725 to 95:5.

この混合比に限定した理由は次のとおシである。The reason for limiting the mixing ratio to this is as follows.

すなわら、銀粉が75重量%未満で、ガラスフリットが
25重量%を越えると、焼き付けC得られた導電性被膜
の比抵抗が15Xj O−Ω、/Jl&以−ヒと高くな
シ、酸に耐する接着強度が飽和値を示すようになる。一
方、銀粉が95重量%を越え、ガラスフリットが5重量
%未満になると、焼き付けた導電性波I]φと基板との
接着強度のバラツキが著しく大きくなり、安定した十分
な接着強度が得られなくなる。
In other words, if the silver powder content is less than 75% by weight and the glass frit content exceeds 25% by weight, the specific resistance of the conductive film obtained by baking becomes higher than 15Xj O-Ω, /Jl The adhesion strength withstanding this comes to show a saturated value. On the other hand, if the silver powder exceeds 95% by weight and the glass frit exceeds 5% by weight, the variation in the adhesive strength between the baked conductive wave I]φ and the substrate becomes significantly large, making it difficult to obtain stable and sufficient adhesive strength. It disappears.

まだ、銀粉と耐酸性を有する低融点ガラスフリットから
なる固形成分と有機質1−ワ、=、スとの混合比(重量
%)は90:10〜45:55の範囲で選ばれる。
The mixing ratio (weight %) of the solid component consisting of silver powder and acid-resistant low melting point glass frit and the organic material is selected in the range of 90:10 to 45:55.

この混合比の範囲に選んだ理由は次のとおりである。す
なわち、有機質】ワ1モ・ノス・け固形成分をスクリー
ン印刷が可能となるようにペースト状とするものであシ
、たとえばセルロースをセロソルブに溶解させたものを
用いるが、有(実質1ワ1−じり又しが10−a儀饅未
満になると、塗布、焼きイ」けに良好な導α性ペースト
が得られなくなり、まだ55重量%を越えると樽、tj
性披眸が3μm以下と薄くなり、導4z1主や面1峻惰
二が恐くなる。
The reason for choosing this mixing ratio range is as follows. In other words, it is a paste made of solid components such as organic matter such as cotton, rice cake, etc., so that it can be screen printed.For example, cellulose dissolved in cellosolve is used. - If the amount of jirimata is less than 10-a, it will not be possible to obtain a good α-conducting paste for coating and baking, and if it still exceeds 55% by weight, it will not be possible to obtain a good α-conducting paste for coating and baking.
The genitalia become thin, less than 3 μm, and the conductor 4z1 main and surface 1 sharp inertia become scary.

さらにま・′こ、この発明にかかる導電性ペーストは耐
酸性を有する低融点ガラスフリットを含有するか、具体
的に・よアルミナを含む硼硅酸系ガラスフリットが好適
である。
Furthermore, the conductive paste according to the present invention preferably contains an acid-resistant, low-melting glass frit, or specifically a borosilicate-based glass frit containing alumina.

アルミナを含む(1,1llI硅酸系ガラスフリツトの
実施態様としては次のような組成がある。
An embodiment of the 1,1llI silicic acid glass frit containing alumina has the following composition.

PbO50〜78重量% 5io2    15〜40重量% 重量%82御31〜4 まだ8四に応じ、TiO,、Na2Oしよびに20つう
ち少なくとも1槌をそれぞれ3重Jlチ以下の範囲で一
ヒ記ガラス7リツト組成に混合されることも許される。
PbO50-78% by weight 5io2 15-40% by weight Weight% It is also permissible to mix it into a glass 7 liter composition.

このアルミナを含む硼硅酸系ガラスフリットを上記した
組成範囲に限定した理由は次のとおシである。
The reason why this borosilicate glass frit containing alumina is limited to the above composition range is as follows.

pboが50重,畝条未満では低温で焼付可能な融点と
はなら〕゛、78重葉%を越えるとlt1′酸性が得ら
れなくなる。
If the pbo is less than 50% by weight and ridges, the melting point will not allow baking at low temperatures.If it exceeds 78% by weight, it will not be possible to obtain lt1' acidity.

S10,が15重量%未満になると耐酸性が得られなく
なり、400重量%越えると低温で焼付可能な融点にな
らなくなる。
When S10 is less than 15% by weight, acid resistance cannot be obtained, and when S10 exceeds 400% by weight, the melting point cannot be reached to allow baking at low temperatures.

B,03が1重量%未満ではP b O 、 S i 
O 2 、 Al go sのガラス化を妨げ、結晶化
してしまい、4重量%を越えると耐酸性が極端に低下し
てしまう。
When B,03 is less than 1% by weight, P b O , S i
It prevents the vitrification of O2 and Algos and causes crystallization, and if it exceeds 4% by weight, the acid resistance will be extremely reduced.

AezOIが6重量%を越えると低温で焼付可能な融点
にならなくなる。
If AezOI exceeds 6% by weight, the melting point will not be high enough to allow baking at low temperatures.

また、TiO,、Nλ20、イ、・よびに、Oのうち少
なくとも1種をそれぞれ3重量%以下の範囲で混合する
が、TlO2が5重量%を越えると、融点が高くなシ、
またNa2Oが3重量%を越えると、#f駿性が悪くカ
シ、さらにに、Oが3重量%を越えると、粘度が高くな
シ、接着強度が低下することにカシ、また耐酸性が低下
することになる。
In addition, at least one of TiO, Nλ20, I, and O is mixed in an amount of 3% by weight or less, but if TlO2 exceeds 5% by weight, the melting point will not be high.
Moreover, if Na2O exceeds 3% by weight, #f has poor adhesion properties, and if O exceeds 3% by weight, the viscosity will be high, adhesive strength will decrease, and acid resistance will decrease. I will do it.

以下この発明を実施例に従つ゛C詳述する0実施例1 平均粒径2pmの銀粉、ガラスフリットおよび有1幾質
フェスの各原料をそれぞれ第1表に示す組成化率になる
ように混合してペーストを作成した。
The present invention will be described in detail below according to Examples.0 Example 1 Silver powder with an average particle size of 2 pm, glass frit, and raw materials for the 1-geometric face were mixed so that the composition ratios shown in Table 1 were obtained. and created a paste.

第1表中ガラスフリットは次の各組成A,Bのものを用
いた。
The glass frits shown in Table 1 had the following compositions A and B.

A 、    Pbo  67取l’4、Sin,  
30重量%、BzOx  2重is、 Altos  
1重IB:   PL)065市に%、Sin,  3
重重訃チ、Btus  2重膜%、 AI!20s  
0.5重量%、Tio,  0.5ffit%、Na,
0  1重)t%、K2O1重Y].% このペーストをガラス基板表面に印刷し、次いで600
Cの温度にて5分間焼付けした。焼付は後に導電性被膜
の抵抗値を測定した。引き続き抵抗(直が2Ωになるよ
うにii′i!酸銅浴を用いて銅の電解メッキを施し、
さらにその上に硫酸ニッケル浴を用いてニッケルの電解
メッキを施し、端子を半lf3 )’tけし゛C接着強
IX[をdlす定し、その結果を第1表に合わ亡゛C示
した。
A, Pbo 67 tori l'4, Sin,
30% by weight, BzOx double is, Altos
1st IB: PL) 065%, Sin, 3
Heavy weight, Btus double membrane%, AI! 20s
0.5% by weight, Tio, 0.5ffit%, Na,
0 1 weight) t%, K2O 1 weight Y]. % This paste was printed on the glass substrate surface, and then 600
Baking was performed at a temperature of C for 5 minutes. After baking, the resistance value of the conductive film was measured. Continue to electrolytically plate the resistor (ii'i! using an acid copper bath so that the resistance is 2Ω,
Furthermore, electrolytic plating of nickel was applied on top of it using a nickel sulfate bath, and the terminal was determined to have a half lf3)'t C adhesion strength IX[dl, and the results are shown in Table 1. .

抵抗値は幅0.′5門、長さ6001の面積における値
である。また接着強度は20八ダ/d 以上が実用的に
値である。
The resistance value is width 0. ' This value is for an area of 5 gates and length 6001. A practical value for the adhesive strength is 208 Da/d or more.

なお、第1表中※印はこの発明範囲外のものであり、千
れμ下はこの発明範囲内のものである。
Incidentally, in Table 1, those marked with * are outside the scope of this invention, and those below 1,000 μm are within the scope of this invention.

第1表 第1表から明らかなように、固形成分である銀粉とガラ
スフリットの混合比(ft最%)が75:25〜95:
5の範囲で、固形成分と有1実質ワ二人との混合比(暇
清%)が90 : 10〜45:55の範囲においで、
導を匡性が良好で、しかも電解メッキを施しても接着強
度が大きい導電性被膜が得られている。
Table 1 As is clear from Table 1, the mixing ratio (maximum % in ft) of silver powder and glass frit, which are solid components, is 75:25 to 95:
In the range of 5, the mixing ratio of the solid component and the 1 substance to 2 substances (freeze %) is in the range of 90: 10 to 45: 55,
A conductive film with good conductivity and high adhesive strength even when subjected to electrolytic plating has been obtained.

試料番号1−1の接着強度は4oKり71以上の値を示
しCいるが、これは40Ky/cdを越えるとガラス基
板が破壊して測定が不可能であることを意味する。
The adhesive strength of Sample No. 1-1 was 71 or higher than 4oK, which means that if the adhesive strength exceeds 40Ky/cd, the glass substrate would be destroyed and measurement would be impossible.

実施例2 平均粒径21tmの訊扮63重通俤、ガノスフリソト1
2重徒チからなる固形成分75重)k%と有機質ワニス
25重j?c%を混合し、ペーストを作成した。
Example 2 Ganosufurisoto 1, 63 layers of grain with an average particle size of 21tm
Solid component consisting of 2 layers (75 weights) k% and organic varnish 25 weights j? c% were mixed to create a paste.

上記ガラスフリットは第2表の比率に調整した組成のも
のを用いた。
The glass frit used had a composition adjusted to the ratios shown in Table 2.

基板とじCセラミック基板を用い、そののち実施例1と
同様にセラミック基板の上に導電性被膜を形成し、ra
t MTメッキを施しだのち接着強度を測定し°Cその
結果を第2表にαわせて示した。なお、41(接値は焼
付後の導11t t’JE u”21!A −r 12
 Q 程度、メッキ?イロで2.S) c)レベルに合
わ1灯たため、名試料の抵抗値(・、(示さなか−)だ
Using the substrate binding C ceramic substrate, a conductive film was formed on the ceramic substrate in the same manner as in Example 1, and the RA
After MT plating was applied, the adhesive strength was measured at °C and the results are shown in Table 2 in α. In addition, 41 (the tangent value is 11t t'JE u"21!A -r 12
Q: Is it plated? 2 with Iro. S) c) Since one light was used to match the level, the resistance value (・, (not shown -)) is a famous sample.

41’S 21’j、中※印をけしだものはこの発rj
ll il・百間外のも(りであり、そ−7L 、j;
J外if1発明、?1 h’fl !’3 ”ものであ
る。
41'S 21'j, those marked with a middle * are this origin rj
ll il・Hyakuken outside mo(ri de, so-7L, j;
J outside if1 invention? 1 h'fl! It's a '3'' thing.

第 2 表 第2表から明らかなようVこ、ガラスフリットが所定範
囲にある導電性ペーストは実JA向1と同様電解メッキ
を施しても良好な接着強度を有する導電性波幀がr樺ら
れている。
Table 2 As is clear from Table 2, a conductive paste with a glass frit within a specified range can produce conductive corrugations with good adhesive strength even when electrolytically plated, similar to JA 1. ing.

実施例5 実施例2における試料番号2−2、試料昨号2−7のも
のを用い、これら各ペーストに酸化第1銅(Cu、0)
、酸化第zm(GuO)を第6表に示す比率にて添加、
含有した。
Example 5 Sample No. 2-2 and Sample No. 2-7 in Example 2 were used, and cuprous oxide (Cu, 0) was added to each of these pastes.
, adding Zm oxide (GuO) at the ratio shown in Table 6,
Contained.

得られたペーストを実施例1と同様にガラス基板の上に
導電性被膜を形成し、電^了メッキ後の接着強度を測定
してその結果を第3表に合わせて示した。
A conductive film was formed on a glass substrate using the obtained paste in the same manner as in Example 1, and the adhesive strength after electroplating was measured. The results are shown in Table 3.

第 5 表 第6表中、試料番号3−1.3−2.3−5 は実施例
2の試料計号2−2のペーストにCu、O,CuOを4
加したもの、試);1爵づ、5 3.=5 4,3 6
史 は実施1rす2の試f’Filt号2−7のペーストC
u2O。
Table 5 In Table 6, sample number 3-1.3-2.3-5 was prepared by adding Cu, O, and CuO to the paste of sample number 2-2 of Example 2.
(added, test); 1 count, 5 3. =5 4,3 6
History is test 1r2 test f'Filt No. 2-7 paste C
u2O.

C1,1,0を電柵したものである。この“)ら、試す
[聞号3” 5 * 6−6 を走端明範囲外のもので
あり、t−れ以外7よ発明範Flt内のものである。
This is C1, 1, and 0 with an electric fence. From this ")," 5 * 6-6 is outside the running edge bright range, and 7 is within the invention range Flt except for t-.

第3為から萌らかなように、Cu2C)、 Cll0を
冷加rることによって1妾着強度をさらに向上、X、l
J:ることができる。
From the third stage, Cu2C), Cl0 is further improved to improve its strength by cooling it, X, l
J: I can.

以上の各実施列から明らかなようにこの清明によn、 
’;、J:、導電1生が良好で、接着・;、1度が大き
く、しかも雷、解メッキ全楕しても耐蝕を主を有する導
電性f1.〜がr[)られるペーストをI■(すること
ができる。
As is clear from each of the above implementation sequences, according to this clarity, n,
';, J:, Conductive f1 with good conductivity, high adhesion, high degree of adhesion, and corrosion resistance even when exposed to lightning and deplating. The paste in which ~ is r[) can be I■(.

!庁、1′F出願人 (°に式会社 1寸田製作所! Office, 1'F applicant (°ni Shikisha 1 Sunda Seisakusho

Claims (1)

【特許請求の範囲】 (」)銀粉と耐酸性を有する低融点ガラスフリットとを
有機質ワニスに混練してなることを特徴とする導電性ペ
ースト。 (2)前記低融点ガラス7リツトはアルミナを含む硼硅
酸鉛系ガラス7リソトからなる特許請求の範囲第(1)
項記載の導電性ペースト。 (3)前記低融点ガラスフリットは次の組成からなる特
許請求の範囲第11)項または第(2)項記載の導電性
ペースト。 pbo      so〜78重量% 510z      15〜40重量膚B2O3L〜 
4.if量俤 A10g      3重量多以下 (4)前記低融点ガラスフリットは次の組成からなる特
許請求の範囲第10項または第(2)項記載の導電性ペ
ースト。 pbo     so〜78重量% S1.0.   15〜40重Btチ Btus       1〜 4重敬襲A/iox  
   3重量%頃下 Tie、 、 MtffiO,およびに20のうち少l
くとも14がぞれぞれ3重徒優以下 (5)導電ペーストを構成rるうち固形成分の銀粉と耐
酸性を有する低融点ガラスフリットの混合比(重量係)
は75!25〜95:5の範囲にあることを特徴とする
特許請求の範囲第m項〜第(4)項記載の導電LIFペ
ースト。 (6)導電性ペーストのうち、銀粉と耐酸性を有する低
融点ガラスフリットからなる固形成分と有機質7ユフ、
との混合比(重量L%)は90:10〜45;55から
なる特許請求の範囲第+l)項記載の導電性ペースト。 (7)導電性ペーストのうち、銀粉と耐酸性を有する低
融点ガラスフリットからなる固形成分に対し、酸化第1
銅または酸化第2銅のいずれか一方または双方が3重量
%以下添加含有されている特許請求の範囲第C0項記載
の導電性ペースト。
[Claims] ('') A conductive paste characterized by kneading silver powder and acid-resistant, low-melting-point glass frit into an organic varnish. (2) Claim No. 1, wherein the low melting point glass 7 lit is lead borosilicate glass 7 lit containing alumina.
Conductive paste as described in section. (3) The conductive paste according to claim 11 or (2), wherein the low melting point glass frit has the following composition. pbo so~78wt% 510z 15~40wt skin B2O3L~
4. (4) The conductive paste according to claim 10 or (2), wherein the low melting point glass frit has the following composition. pbo so~78% by weight S1.0. 15-40 heavy Bt Chi Btus 1-4 heavy assault A/iox
Approximately 3% by weight of Tie, MtffiO, and less than 20% of
(5) Mixing ratio (by weight) of solid component silver powder and acid-resistant low melting point glass frit that constitute the conductive paste.
The conductive LIF paste according to claims m to (4), wherein the ratio is in the range of 75:25 to 95:5. (6) Among the conductive paste, a solid component consisting of silver powder and acid-resistant low melting point glass frit, and an organic substance 70%,
The conductive paste according to Claim No. (7) Among the conductive paste, the solid component consisting of silver powder and acid-resistant low melting point glass frit is
The conductive paste according to claim C0, which contains copper or cupric oxide or both in an amount of 3% by weight or less.
JP17928982A 1982-10-12 1982-10-12 Conductive paste Granted JPS5968101A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP17928982A JPS5968101A (en) 1982-10-12 1982-10-12 Conductive paste

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP17928982A JPS5968101A (en) 1982-10-12 1982-10-12 Conductive paste

Publications (2)

Publication Number Publication Date
JPS5968101A true JPS5968101A (en) 1984-04-18
JPH0440803B2 JPH0440803B2 (en) 1992-07-06

Family

ID=16063220

Family Applications (1)

Application Number Title Priority Date Filing Date
JP17928982A Granted JPS5968101A (en) 1982-10-12 1982-10-12 Conductive paste

Country Status (1)

Country Link
JP (1) JPS5968101A (en)

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6124101A (en) * 1984-07-13 1986-02-01 住友金属鉱山株式会社 Thick film conductive paste
JPH0286665A (en) * 1988-09-22 1990-03-27 Sumitomo Metal Mining Co Ltd Primer of conductive coating material for plating and plating by using same
JPH0560669A (en) * 1991-08-30 1993-03-12 Shimadzu Corp Material testing machine
US7267713B2 (en) 2003-04-28 2007-09-11 Murata Manufacturing Co., Ltd. Conductive paste and glass circuit structure
JP2008117790A (en) * 2008-01-16 2008-05-22 Murata Mfg Co Ltd Conductive paste, and glass circuit structure

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5585439A (en) * 1978-09-18 1980-06-27 Toshiba Corp Glass adhering conductor paste

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5585439A (en) * 1978-09-18 1980-06-27 Toshiba Corp Glass adhering conductor paste

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6124101A (en) * 1984-07-13 1986-02-01 住友金属鉱山株式会社 Thick film conductive paste
JPH0311483B2 (en) * 1984-07-13 1991-02-18 Sumitomo Kinzoku Kozan Kk
JPH0286665A (en) * 1988-09-22 1990-03-27 Sumitomo Metal Mining Co Ltd Primer of conductive coating material for plating and plating by using same
JPH0560669A (en) * 1991-08-30 1993-03-12 Shimadzu Corp Material testing machine
US7267713B2 (en) 2003-04-28 2007-09-11 Murata Manufacturing Co., Ltd. Conductive paste and glass circuit structure
JP2008117790A (en) * 2008-01-16 2008-05-22 Murata Mfg Co Ltd Conductive paste, and glass circuit structure

Also Published As

Publication number Publication date
JPH0440803B2 (en) 1992-07-06

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