JPS57161857A - Photomask blank plate - Google Patents

Photomask blank plate

Info

Publication number
JPS57161857A
JPS57161857A JP4792381A JP4792381A JPS57161857A JP S57161857 A JPS57161857 A JP S57161857A JP 4792381 A JP4792381 A JP 4792381A JP 4792381 A JP4792381 A JP 4792381A JP S57161857 A JPS57161857 A JP S57161857A
Authority
JP
Japan
Prior art keywords
layer
tantalum
glass
thin
photomask blank
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP4792381A
Other languages
Japanese (ja)
Other versions
JPS6251461B2 (en
Inventor
Akira Kaneki
Yuji Kikuchi
Yoji Sasaki
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Dai Nippon Printing Co Ltd
Original Assignee
Dai Nippon Printing Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Dai Nippon Printing Co Ltd filed Critical Dai Nippon Printing Co Ltd
Priority to JP4792381A priority Critical patent/JPS57161857A/en
Priority to EP81109440A priority patent/EP0054736B1/en
Priority to DE8181109440T priority patent/DE3170637D1/en
Priority to US06/319,962 priority patent/US4374912A/en
Publication of JPS57161857A publication Critical patent/JPS57161857A/en
Publication of JPS6251461B2 publication Critical patent/JPS6251461B2/ja
Granted legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/50—Mask blanks not covered by G03F1/20 - G03F1/34; Preparation thereof
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/38—Masks having auxiliary features, e.g. special coatings or marks for alignment or testing; Preparation thereof
    • G03F1/46—Antireflective coatings

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Preparing Plates And Mask In Photomechanical Process (AREA)

Abstract

PURPOSE:To form a multilayer tantalum mask high in precision and durability, by laminating a thin film consisting mainly of tantalum nitride and oxide on a tantalum film. CONSTITUTION:A photomask blank plate 4 is made by forming a usually 50- 100nm thin tantalum film layer 2, and further on this layer, a usually 20-40nm thin layer 3 consisting mainly of tantalum oxide and nitride as a reflection- preventing layer on a transparent substrate 1 made of a surface-fully-polished soad lime glass, borosilicate glass, quartz glass, sapphire glass, or the like. The layer 3 is prepared by the reactive sputtering process using an N2 and O2 atmosphere, and the laminate layer 4 consisting of the layers 2, 3 is formed into a pattern.
JP4792381A 1980-12-22 1981-03-31 Photomask blank plate Granted JPS57161857A (en)

Priority Applications (4)

Application Number Priority Date Filing Date Title
JP4792381A JPS57161857A (en) 1981-03-31 1981-03-31 Photomask blank plate
EP81109440A EP0054736B1 (en) 1980-12-22 1981-10-30 Photomask and photomask blank
DE8181109440T DE3170637D1 (en) 1980-12-22 1981-10-30 Photomask and photomask blank
US06/319,962 US4374912A (en) 1981-03-31 1981-11-10 Photomask and photomask blank

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP4792381A JPS57161857A (en) 1981-03-31 1981-03-31 Photomask blank plate

Publications (2)

Publication Number Publication Date
JPS57161857A true JPS57161857A (en) 1982-10-05
JPS6251461B2 JPS6251461B2 (en) 1987-10-30

Family

ID=12788884

Family Applications (1)

Application Number Title Priority Date Filing Date
JP4792381A Granted JPS57161857A (en) 1980-12-22 1981-03-31 Photomask blank plate

Country Status (1)

Country Link
JP (1) JPS57161857A (en)

Cited By (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6280656A (en) * 1985-10-04 1987-04-14 Toppan Printing Co Ltd Photomask blank and photomask
JP2002246299A (en) * 2001-02-20 2002-08-30 Oki Electric Ind Co Ltd Reflecting type exposure mask, its manufacturing method and semiconductor element
JP2004361507A (en) * 2003-06-02 2004-12-24 Renesas Technology Corp Method for manufacturing photomask and photomask drawing system
DE102009010855A1 (en) 2008-02-27 2009-10-15 Hoya Corp. Photomask blank, photomask, and method of making a photomask
DE102009010854A1 (en) 2008-02-27 2009-10-22 Hoya Corp. Photomask blank, photomask and method of making the same
JP2011059502A (en) * 2009-09-11 2011-03-24 Hoya Corp Photomask blank and manufacturing method of photomask
JP2011227461A (en) * 2010-03-30 2011-11-10 Hoya Corp Mask blank, transfer mask, methods for manufacturing the same, and method for manufacturing semiconductor device
JP2012008606A (en) * 2008-02-27 2012-01-12 Hoya Corp Photomask blank, photomask, and method for manufacturing photomask
JP2012242634A (en) * 2011-05-20 2012-12-10 Hoya Corp Method for manufacturing mask blank, method for manufacturing transfer mask, and method for manufacturing semiconductor device
US8524421B2 (en) 2010-03-30 2013-09-03 Hoya Corporation Mask blank, transfer mask, methods of manufacturing the same and method of manufacturing a semiconductor device
JP2014194564A (en) * 2006-09-15 2014-10-09 Applied Materials Inc Photomask possessing self-masking layer and etching method for the same
JP2016145993A (en) * 2016-04-08 2016-08-12 Hoya株式会社 Mask blank production method, transfer mask production method, and semiconductor device production method
TWI569093B (en) * 2011-09-28 2017-02-01 Ｈｏｙａ股份有限公司 Mask blank, transfer mask, method of manufacturing transfer mask and method of manufacturing semiconductor device

Cited By (21)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6280656A (en) * 1985-10-04 1987-04-14 Toppan Printing Co Ltd Photomask blank and photomask
JP2002246299A (en) * 2001-02-20 2002-08-30 Oki Electric Ind Co Ltd Reflecting type exposure mask, its manufacturing method and semiconductor element
JP2004361507A (en) * 2003-06-02 2004-12-24 Renesas Technology Corp Method for manufacturing photomask and photomask drawing system
JP2014194564A (en) * 2006-09-15 2014-10-09 Applied Materials Inc Photomask possessing self-masking layer and etching method for the same
US8283092B2 (en) 2008-02-27 2012-10-09 Hoya Corporation Photomask blank, photomask, and photomask manufacturing method
DE102009010855A1 (en) 2008-02-27 2009-10-15 Hoya Corp. Photomask blank, photomask, and method of making a photomask
DE102009010854A1 (en) 2008-02-27 2009-10-22 Hoya Corp. Photomask blank, photomask and method of making the same
JP2012008606A (en) * 2008-02-27 2012-01-12 Hoya Corp Photomask blank, photomask, and method for manufacturing photomask
US8518609B2 (en) 2008-02-27 2013-08-27 Hoya Corporation Photomask blank, photomask, and photomask manufacturing method
US8137867B2 (en) 2008-02-27 2012-03-20 Hoya Corporation Photomask blank, photomask, and methods of manufacturing the same
US8137868B2 (en) 2008-02-27 2012-03-20 Hoya Corporation Photomask blank, photomask, and methods of manufacturing the same
JP2011059502A (en) * 2009-09-11 2011-03-24 Hoya Corp Photomask blank and manufacturing method of photomask
US8435704B2 (en) 2010-03-30 2013-05-07 Hoya Corporation Mask blank, transfer mask, and methods of manufacturing the same
DE102011006354A1 (en) 2010-03-30 2012-01-12 Hoya Corp. Mask blank, transfer mask, method for its production and method for producing a semiconductor device
US8524421B2 (en) 2010-03-30 2013-09-03 Hoya Corporation Mask blank, transfer mask, methods of manufacturing the same and method of manufacturing a semiconductor device
JP2011227461A (en) * 2010-03-30 2011-11-10 Hoya Corp Mask blank, transfer mask, methods for manufacturing the same, and method for manufacturing semiconductor device
JP2015121827A (en) * 2010-03-30 2015-07-02 Hoya株式会社 Mask blank, mask for transfer, and method for manufacturing semiconductor device
US9140980B2 (en) 2010-03-30 2015-09-22 Hoya Corporation Method of manufacturing a transfer mask and method of manufacturing a semiconductor device
JP2012242634A (en) * 2011-05-20 2012-12-10 Hoya Corp Method for manufacturing mask blank, method for manufacturing transfer mask, and method for manufacturing semiconductor device
TWI569093B (en) * 2011-09-28 2017-02-01 Ｈｏｙａ股份有限公司 Mask blank, transfer mask, method of manufacturing transfer mask and method of manufacturing semiconductor device
JP2016145993A (en) * 2016-04-08 2016-08-12 Hoya株式会社 Mask blank production method, transfer mask production method, and semiconductor device production method

Also Published As

Publication number Publication date
JPS6251461B2 (en) 1987-10-30

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