JPS5530207B2 - - Google Patents

Info

Publication number
JPS5530207B2
JPS5530207B2 JP2131174A JP2131174A JPS5530207B2 JP S5530207 B2 JPS5530207 B2 JP S5530207B2 JP 2131174 A JP2131174 A JP 2131174A JP 2131174 A JP2131174 A JP 2131174A JP S5530207 B2 JPS5530207 B2 JP S5530207B2
Authority
JP
Japan
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
JP2131174A
Other versions
JPS49115541A (ja
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from DE19732308830 external-priority patent/DE2308830C3/de
Application filed filed Critical
Publication of JPS49115541A publication Critical patent/JPS49115541A/ja
Publication of JPS5530207B2 publication Critical patent/JPS5530207B2/ja
Expired legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C07—ORGANIC CHEMISTRY
    • C07C—ACYCLIC OR CARBOCYCLIC COMPOUNDS
    • C07C255/00—Carboxylic acid nitriles
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/038—Macromolecular compounds which are rendered insoluble or differentially wettable
    • G03F7/0387—Polyamides or polyimides

Landscapes

  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • General Physics & Mathematics (AREA)
  • Macromolecular Compounds Obtained By Forming Nitrogen-Containing Linkages In General (AREA)
  • Polymers With Sulfur, Phosphorus Or Metals In The Main Chain (AREA)
  • Macromonomer-Based Addition Polymer (AREA)
  • Addition Polymer Or Copolymer, Post-Treatments, Or Chemical Modifications (AREA)
  • Organic Low-Molecular-Weight Compounds And Preparation Thereof (AREA)
JP2131174A 1973-02-22 1974-02-22 Expired JPS5530207B2 (ja)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DE19732308830 DE2308830C3 (de) 1973-02-22 Verfahren zur Herstellung von Reliefstrukturen

Publications (2)

Publication Number Publication Date
JPS49115541A JPS49115541A (ja) 1974-11-05
JPS5530207B2 true JPS5530207B2 (ja) 1980-08-09

Family

ID=5872768

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2131174A Expired JPS5530207B2 (ja) 1973-02-22 1974-02-22

Country Status (9)

Country Link
US (1) US3957512A (ja)
JP (1) JPS5530207B2 (ja)
AT (1) AT330469B (ja)
BE (1) BE811380A (ja)
FR (1) FR2219446B1 (ja)
GB (1) GB1467226A (ja)
IT (1) IT1008872B (ja)
LU (1) LU69433A1 (ja)
NL (1) NL177718C (ja)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6117077U (ja) * 1984-07-05 1986-01-31 節子 佐々木 自動車用タイヤ保管袋
WO2007119384A1 (ja) 2006-03-16 2007-10-25 Asahi Glass Company, Limited ネガ型感光性含フッ素芳香族系樹脂組成物
US7947428B2 (en) 2004-09-28 2011-05-24 Tdk Corporation Method for forming photosensitive polyimide pattern and electronic devices having the pattern

Families Citing this family (108)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE2326314C2 (de) * 1973-05-23 1983-10-27 Siemens AG, 1000 Berlin und 8000 München Verfahren zur Herstellung von Reliefstrukturen
DE2437348B2 (de) * 1974-08-02 1976-10-07 Ausscheidung in: 24 62 105 Verfahren zur herstellung von reliefstrukturen
AT352406B (de) * 1974-08-02 1979-09-25 Siemens Ag Verfahren zur herstellung von reliefstrukturen
USRE30186E (en) * 1974-08-02 1980-01-08 Siemens Aktiengesellschaft Method for the preparation of relief structures
AT341792B (de) * 1974-08-02 1978-02-27 Siemens Ag Verfahren zur herstellung von schichtstrukturen
DE2457882B2 (de) * 1974-12-06 1977-06-02 Siemens AG, 1000 Berlin und 8000 München Waermebestaendige, lichtvernetzbare massen
LU75749A1 (ja) * 1976-09-08 1978-04-27
JPS5952822B2 (ja) * 1978-04-14 1984-12-21 東レ株式会社 耐熱性感光材料
JPS5545747A (en) * 1978-09-29 1980-03-31 Hitachi Ltd Photosensitive polymer and its production
JPS5545748A (en) * 1978-09-29 1980-03-31 Hitachi Ltd Photosensitive polymer and its production
DE2967162D1 (en) * 1978-09-29 1984-09-13 Hitachi Ltd Light-sensitive polymer composition
DE2919840A1 (de) * 1979-05-16 1980-11-20 Siemens Ag Verfahren zur phototechnischen herstellung von reliefstrukturen
DE2919841A1 (de) * 1979-05-16 1980-11-20 Siemens Ag Verfahren zur phototechnischen herstellung von reliefstrukturen
JPS5622428A (en) * 1979-08-01 1981-03-03 Toray Ind Inc Polyimide pattern forming method
DE2933827A1 (de) * 1979-08-21 1981-03-12 Siemens AG, 1000 Berlin und 8000 München Verfahren zur herstellung hochwaermebestaendiger reliefstrukturen und deren verwendung.
DE2933856A1 (de) * 1979-08-21 1981-03-12 Siemens AG, 1000 Berlin und 8000 München Verfahren zur herstellung eines zugfesten lichtwellenleiters
DE2933826A1 (de) * 1979-08-21 1981-03-19 Siemens AG, 1000 Berlin und 8000 München Polyimid-, polyisoindolochinazolindion-, polyoxazindion- und polychinazolindion-vorstufen sowie deren herstellung
DE2933828A1 (de) * 1979-08-21 1981-03-12 Siemens AG, 1000 Berlin und 8000 München Polyoxazol-vorstufen sowie deren herstellung.
DE2933871A1 (de) * 1979-08-21 1981-03-12 Siemens AG, 1000 Berlin und 8000 München Verfahren zur herstellung hochwaermebestaendiger reliefstrukturen und deren verwendung.
DE2933819A1 (de) * 1979-08-21 1981-03-19 Siemens AG, 1000 Berlin und 8000 München Polyimidazol- und polyimidazopyrrolon-vorstufen sowie deren herstellung
DE2933805A1 (de) * 1979-08-21 1981-03-12 Siemens AG, 1000 Berlin und 8000 München Verfahren zur herstellung hochwaermebestaendiger reliefstrukturen und deren verwendung
DE3021748A1 (de) * 1980-06-10 1981-12-17 Siemens AG, 1000 Berlin und 8000 München Strahlungsreaktive vorstufen hochwaermebestaendiger polymerer
DE3021787A1 (de) * 1980-06-10 1981-12-17 Siemens AG, 1000 Berlin und 8000 München Verfahren zur herstellung hochwaermebestaendiger reliefstrukturen und deren verwendung
US4410612A (en) * 1980-09-03 1983-10-18 E. I. Du Pont De Nemours And Company Electrical device formed from polymeric heat resistant photopolymerizable composition
US4369247A (en) * 1980-09-03 1983-01-18 E. I. Du Pont De Nemours And Company Process of producing relief structures using polyamide ester resins
US4414312A (en) * 1980-09-03 1983-11-08 E. I. Du Pont De Nemours & Co. Photopolymerizable polyamide ester resin compositions containing an oxygen scavenger
US4329419A (en) * 1980-09-03 1982-05-11 E. I. Du Pont De Nemours And Company Polymeric heat resistant photopolymerizable composition for semiconductors and capacitors
DE3107633A1 (de) * 1981-02-27 1982-09-16 Siemens AG, 1000 Berlin und 8000 München Verfahren zur herstellung duenner polyimidschichten"
US4454220A (en) * 1982-01-04 1984-06-12 E. I. Du Pont De Nemours And Company Electrical device containing a radiation-sensitive polyimide precursor composition derived from a diaryl fluoro compound
US4416973A (en) * 1982-01-04 1983-11-22 E. I. Du Pont De Nemours & Co. Radiation-sensitive polyimide precursor composition derived from a diaryl fluoro compound
US4430418A (en) 1982-09-30 1984-02-07 E. I. Du Pont De Nemours And Company Radiation-sensitive polyimide precursor composition derived from a diaryl fluoronated diamine compound
JPS58223149A (ja) * 1982-06-22 1983-12-24 Toray Ind Inc 感光性ポリイミド用現像液
DE3233912A1 (de) * 1982-09-13 1984-03-15 Merck Patent Gmbh, 6100 Darmstadt Fotolacke zur ausbildung von reliefstrukturen aus hochwaermebestaendigen polymeren
US4579809A (en) * 1982-10-22 1986-04-01 Ciba-Geigy Corporation Positive image formation
DE3246403A1 (de) * 1982-12-15 1984-06-20 Merck Patent Gmbh, 6100 Darmstadt Verfahren zur entwicklung von reliefstrukturen auf der basis von strahlungsvernetzten polymervorstufen hochwaermebestaendiger polymere
US4548891A (en) * 1983-02-11 1985-10-22 Ciba Geigy Corporation Photopolymerizable compositions containing prepolymers with olefin double bonds and titanium metallocene photoinitiators
EP0119719B1 (en) * 1983-03-03 1987-05-06 Toray Industries, Inc. Radiation sensitive polymer composition
US4656116A (en) * 1983-10-12 1987-04-07 Ciba-Geigy Corporation Radiation-sensitive coating composition
DE3411697A1 (de) * 1984-03-29 1985-10-10 Siemens AG, 1000 Berlin und 8000 München Verfahren zur herstellung von polyimid- und polyisoindolochinazolindion-reliefstrukturen
DE3411660A1 (de) * 1984-03-29 1985-10-03 Siemens AG, 1000 Berlin und 8000 München Verfahren zur herstellung von polyimid- und polyisoindolochinazolindion-vorstufen
US4551522A (en) * 1985-04-26 1985-11-05 E. I. Du Pont De Nemours And Company Process for making photopolymerizable aromatic polyamic acid derivatives
EP0254230A3 (en) * 1986-07-22 1988-11-23 Asahi Kasei Kogyo Kabushiki Kaisha Heat-resistant photoresist film
EP0259727A3 (de) * 1986-09-11 1989-02-08 Siemens Aktiengesellschaft Verfahren zur Herstellung wärmebeständiger strukturierter Schichten auf Epoxidharzbasis
US5077378A (en) * 1986-10-02 1991-12-31 Hoechst Celanese Corporation Polyamide containing the hexafluoroisopropylidene group
EP0291779B1 (de) * 1987-05-18 1994-07-27 Siemens Aktiengesellschaft Wärmebeständige Positivresists und Verfahren zur Herstellung wärmebeständiger Reliefstrukturen
DE3717933A1 (de) * 1987-05-27 1988-12-08 Hoechst Ag Photopolymerisierbares gemisch, dieses enthaltendes aufzeichnungsmaterial und verfahren zur herstellung von hochwaermebestaendigen reliefstrukturen
US5270431A (en) * 1987-07-23 1993-12-14 Basf Aktiengesellschaft Preparation of oligomeric or polymeric radiation-reactive intermediates for solvent-structured layers
JP2640470B2 (ja) * 1987-08-19 1997-08-13 旭化成工業株式会社 新しい感光性組成物
DE3833437A1 (de) * 1988-10-01 1990-04-05 Basf Ag Strahlungsempfindliche gemische und deren verwendung
DE3833438A1 (de) * 1988-10-01 1990-04-05 Basf Ag Strahlungsempfindliche gemische und deren verwendung
DE3837612A1 (de) * 1988-11-05 1990-05-23 Ciba Geigy Ag Positiv-fotoresists von polyimid-typ
US5218009A (en) * 1989-08-04 1993-06-08 Ciba-Geigy Corporation Mono- and di-acylphosphine oxides
EP0458741B1 (de) * 1990-05-10 1996-01-24 Ciba-Geigy Ag Strahlenhärtbare lichtstabilisierte Zusammensetzungen
US5310862A (en) * 1991-08-20 1994-05-10 Toray Industries, Inc. Photosensitive polyimide precursor compositions and process for preparing same
DE4217688A1 (de) * 1992-05-29 1993-12-02 Basf Lacke & Farben Durch Einwirkung von Strahlung vernetzendes Gemisch und dessen Verwendung zur Herstellung hochtemperaturbeständiger Reliefstrukturen
DE69308671T2 (de) * 1992-07-22 1997-10-16 Asahi Chemical Ind Photoempfindliche Polyimid-Zusammensetzung
JP2787531B2 (ja) * 1993-02-17 1998-08-20 信越化学工業株式会社 感光性樹脂組成物及び電子部品用保護膜
US5573886A (en) * 1994-01-21 1996-11-12 Shin-Etsu Chemical Co., Ltd. Photosensitive resin composition comprising a polyimide precursor and method for making a polyimide film pattern from the same
KR100384746B1 (ko) * 1994-09-13 2003-08-25 제온 코포레이션 감광성 폴리이미드 수지 조성물
JP3170174B2 (ja) 1995-04-18 2001-05-28 日本ゼオン株式会社 ポリイミド系樹脂組成物
US5886136A (en) * 1995-09-12 1999-03-23 Nippon Zeon Co., Ltd. Pattern forming process
US5648451A (en) * 1995-10-10 1997-07-15 Sumitomo Bakelite Company Limited Process for producing photosensitive resin
US6010825A (en) * 1997-09-11 2000-01-04 Olin Microelectronics Chemicals, Inc. Negatively acting photoresist composition based on polyimide precursors
US6160081A (en) * 1997-10-31 2000-12-12 Nippon Zeon Co., Ltd. Photosensitive polyimide resin composition
KR100414697B1 (ko) 1999-01-25 2004-01-13 리카가쿠 겐큐쇼 감광성 수지조성물 및 이를 사용한 반도체장치
KR100519650B1 (ko) * 1999-02-05 2005-10-07 제일모직주식회사 점도가 균일한 폴리아믹산의 제조방법
JP4529252B2 (ja) 1999-09-28 2010-08-25 日立化成デュポンマイクロシステムズ株式会社 ポジ型感光性樹脂組成物、パターンの製造法及び電子部品
KR100422971B1 (ko) 1999-12-29 2004-03-12 삼성전자주식회사 나프톨 구조를 가진 이온형 광산발생제 및 이를 이용한감광성 폴리이미드 조성물
EP1138804A3 (de) 2000-03-27 2003-06-25 Infineon Technologies AG Bauelement mit zumindest zwei aneinander grenzenden Isolierschichten und Herstellungsverfahren dazu
JP3773845B2 (ja) 2000-12-29 2006-05-10 三星電子株式会社 ポジティブ型感光性ポリイミド前駆体およびこれを含む組成物
US7141614B2 (en) * 2001-10-30 2006-11-28 Kaneka Corporation Photosensitive resin composition and photosensitive films and laminates made by using the same
KR100532590B1 (ko) * 2002-11-07 2005-12-01 삼성전자주식회사 감광성 폴리이미드 전구체용 가용성 폴리이미드 및, 이를포함하는 감광성 폴리이드 전구체 조성물
US7799317B2 (en) * 2002-11-22 2010-09-21 Hallstar Innovations Corp. Photostabilizers, UV absorbers, and methods of photostabilizing compositions
JP4317870B2 (ja) * 2003-03-11 2009-08-19 フジフィルム・エレクトロニック・マテリアルズ・ユーエスエイ・インコーポレイテッド 新規な感光性樹脂組成物
WO2004092838A1 (ja) * 2003-04-15 2004-10-28 Kaneka Corporation 水系現像が可能な感光性樹脂組成物および感光性ドライフィルムレジスト、並びにその利用
EP1708026B1 (en) 2004-01-14 2011-10-05 Hitachi Chemical DuPont Microsystems Ltd. Photosensitive polymer composition, process for producing pattern, and electronic part
JP4771412B2 (ja) * 2005-02-14 2011-09-14 信越化学工業株式会社 感光性樹脂及びその製造方法
US8871422B2 (en) * 2005-09-22 2014-10-28 Hitachi Chemical Dupont Microsystems Ltd. Negative-type photosensitive resin composition, pattern forming method and electronic parts
KR100995620B1 (ko) * 2006-04-28 2010-11-22 아사히 가세이 가부시키가이샤 감광성 수지 조성물 및 감광성 필름
KR101025395B1 (ko) * 2006-06-20 2011-03-28 히다치 가세이듀퐁 마이쿠로시스데무즈 가부시키가이샤 네거티브형 감광성 수지 조성물, 패턴의 제조방법 및 전자부품
JP4386454B2 (ja) * 2006-08-22 2009-12-16 信越化学工業株式会社 アルカリ水溶液に可溶な感光性ポリイミド樹脂、該樹脂を含む組成物、及び該組成物から得られる膜
JP4336999B2 (ja) 2007-01-31 2009-09-30 信越化学工業株式会社 シルフェニレン骨格含有高分子化合物及び光硬化性樹脂組成物並びにパターン形成方法及び基板回路保護用皮膜
KR100833706B1 (ko) * 2007-02-01 2008-05-29 삼성전자주식회사 감광성 폴리이미드 조성물, 폴리이미드 필름 및 이를 이용한 반도체 소자
EP2133743B1 (en) * 2007-03-12 2018-01-24 Hitachi Chemical DuPont Microsystems, Ltd. Photosensitive resin composition, process for producing patterned hardened film with use thereof and electronic part
KR101275474B1 (ko) * 2007-10-29 2013-06-14 히다치 가세이듀퐁 마이쿠로시스데무즈 가부시키가이샤 포지티브형 감광성 수지 조성물, 패턴의 제조방법 및 전자부품
JP4770985B2 (ja) 2007-11-12 2011-09-14 日立化成工業株式会社 ポジ型感光性樹脂組成物、レジストパターンの製造方法、半導体装置及び電子デバイス
JP4911116B2 (ja) * 2008-05-22 2012-04-04 日立化成デュポンマイクロシステムズ株式会社 半導体装置及びその製造方法、感光性樹脂組成物並びに電子部品
US8426985B2 (en) * 2008-09-04 2013-04-23 Hitachi Chemical Company, Ltd. Positive-type photosensitive resin composition, method for producing resist pattern, and electronic component
KR101398754B1 (ko) 2008-12-26 2014-05-27 히타치가세이가부시끼가이샤 포지티브형 감광성 수지 조성물, 레지스트 패턴의 제조 방법, 반도체 장치 및 전자 디바이스
JP5206977B2 (ja) 2009-03-12 2013-06-12 信越化学工業株式会社 新規ポリイミドシリコーン及びこれを含有する感光性樹脂組成物並びにパターン形成方法
TWI516527B (zh) * 2009-12-10 2016-01-11 信越化學工業股份有限公司 光固化性樹脂組成物，圖案形成法和基板保護膜，以及使用該組成物之膜狀黏著劑及黏著片
US9063421B2 (en) 2011-11-17 2015-06-23 Shin-Etsu Chemical Co., Ltd. Chemically amplified positive resist composition and pattern forming process
JP6065789B2 (ja) 2012-09-27 2017-01-25 信越化学工業株式会社 化学増幅ポジ型レジスト材料及びパターン形成方法
WO2014060450A1 (en) 2012-10-19 2014-04-24 Basf Se Hybrid photoinitiators
JP6487875B2 (ja) 2016-04-19 2019-03-20 信越化学工業株式会社 テトラカルボン酸ジエステル化合物、ポリイミド前駆体の重合体及びその製造方法、ネガ型感光性樹脂組成物、ポジ型感光性樹脂組成物、パターン形成方法、及び硬化被膜形成方法
JP6663320B2 (ja) 2016-07-25 2020-03-11 信越化学工業株式会社 テトラカルボン酸ジエステル化合物、ポリイミド前駆体の重合体及びその製造方法、ネガ型感光性樹脂組成物、パターン形成方法、及び硬化被膜形成方法
JP6637871B2 (ja) 2016-10-27 2020-01-29 信越化学工業株式会社 テトラカルボン酸ジエステル化合物、ポリイミド前駆体の重合体及びその製造方法、ネガ型感光性樹脂組成物、パターン形成方法、及び硬化被膜形成方法
JP6663380B2 (ja) 2017-03-22 2020-03-11 信越化学工業株式会社 ポリイミド前駆体の重合体、ポジ型感光性樹脂組成物、ネガ型感光性樹脂組成物、パターン形成方法、硬化被膜形成方法、層間絶縁膜、表面保護膜、及び電子部品
JP6810677B2 (ja) 2017-12-05 2021-01-06 信越化学工業株式会社 新規テトラカルボン酸二無水物、ポリイミド樹脂及びその製造方法、感光性樹脂組成物、パターン形成方法及び硬化被膜形成方法、層間絶縁膜、表面保護膜、電子部品
JP7145126B2 (ja) 2018-08-01 2022-09-30 信越化学工業株式会社 ポリアミド、ポリアミドイミド、ポリイミド構造を含む重合体、感光性樹脂組成物、パターン形成方法、感光性ドライフィルム及び電気・電子部品保護用皮膜
JP7154184B2 (ja) 2019-04-15 2022-10-17 信越化学工業株式会社 ポジ型感光性樹脂組成物、パターン形成方法、硬化被膜形成方法、層間絶縁膜、表面保護膜、及び電子部品
US11572442B2 (en) 2020-04-14 2023-02-07 International Business Machines Corporation Compound, polyimide resin and method of producing the same, photosensitive resin composition, patterning method and method of forming cured film, interlayer insulating film, surface protective film, and electronic component
US11333975B2 (en) 2020-04-14 2022-05-17 International Business Machines Corporation Polymer, photosensitive resin composition, patterning method, method of forming cured film, interlayer insulating film, surface protective film, and electronic component
JP2022029427A (ja) 2020-08-04 2022-02-17 信越化学工業株式会社 ネガ型感光性樹脂組成物、パターン形成方法、硬化被膜形成方法、層間絶縁膜、表面保護膜、及び電子部品
KR102418193B1 (ko) 2020-08-28 2022-07-07 주식회사 파이솔루션테크놀로지 감광성 폴리이미드 및 이의 조성물
KR20220089659A (ko) 2020-12-21 2022-06-28 주식회사 파이솔루션테크놀로지 네가티브형 감광성 폴리아믹산 에스테르 공중합체의 제조방법
JP2022137420A (ja) 2021-03-09 2022-09-22 信越化学工業株式会社 ポリイミドを含む重合体、ポジ型感光性樹脂組成物、ネガ型感光性樹脂組成物、パターン形成方法、硬化被膜形成方法、層間絶縁膜、表面保護膜、及び電子部品
JP2023165095A (ja) 2022-05-02 2023-11-15 信越化学工業株式会社 ネガ型感光性樹脂組成物、パターン形成方法、層間絶縁膜、表面保護膜、及び電子部品

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3475176A (en) * 1966-09-06 1969-10-28 Eastman Kodak Co Azide sensitized photosensitive prepolymer compositions
US3650746A (en) * 1969-06-16 1972-03-21 Grace W R & Co Dual image formation on separate supports of photocurable composition
US3858510A (en) * 1971-03-11 1975-01-07 Asahi Chemical Ind Relief structures prepared from photosensitive compositions
US3801638A (en) * 1971-03-12 1974-04-02 Gaf Corp Triacrylyldiethylenetriamine,method of producing the same,and photopolymerization process and system utilizing the same
BE793732A (fr) * 1972-01-10 1973-05-02 Grace W R & Co Composition contenant un polyene et un polythiol
US3847767A (en) * 1973-03-13 1974-11-12 Grace W R & Co Method of producing a screen printable photocurable solder resist

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6117077U (ja) * 1984-07-05 1986-01-31 節子 佐々木 自動車用タイヤ保管袋
US7947428B2 (en) 2004-09-28 2011-05-24 Tdk Corporation Method for forming photosensitive polyimide pattern and electronic devices having the pattern
WO2007119384A1 (ja) 2006-03-16 2007-10-25 Asahi Glass Company, Limited ネガ型感光性含フッ素芳香族系樹脂組成物
JP4730436B2 (ja) * 2006-03-16 2011-07-20 旭硝子株式会社 ネガ型感光性含フッ素芳香族系樹脂組成物

Also Published As

Publication number Publication date
IT1008872B (it) 1976-11-30
NL177718C (nl) 1985-11-01
US3957512A (en) 1976-05-18
NL7400931A (ja) 1974-08-26
DE2308830A1 (de) 1974-08-29
NL177718B (nl) 1985-06-03
ATA131474A (de) 1975-09-15
BE811380A (fr) 1974-06-17
DE2308830B2 (de) 1975-06-26
FR2219446B1 (ja) 1977-09-23
AT330469B (de) 1976-07-12
JPS49115541A (ja) 1974-11-05
LU69433A1 (ja) 1974-05-29
GB1467226A (en) 1977-03-16
FR2219446A1 (ja) 1974-09-20

Similar Documents

Publication Publication Date Title
FR2219446B1 (ja)
AR201758A1 (ja)
AU476761B2 (ja)
AU465372B2 (ja)
AU474593B2 (ja)
AU474511B2 (ja)
JPS5451639U (ja)
AU465453B2 (ja)
AU471343B2 (ja)
AU465434B2 (ja)
AU450229B2 (ja)
AU466283B2 (ja)
AU472848B2 (ja)
AR199451A1 (ja)
AU477823B2 (ja)
AU476873B1 (ja)
AU477824B2 (ja)
AR210729A1 (ja)
AU447540B2 (ja)
AU471461B2 (ja)
AU461342B2 (ja)
AU1891376A (ja)
BG21116A1 (ja)
BG19642A1 (ja)
BG19479A1 (ja)