JPS5622428A - Polyimide pattern forming method - Google Patents

Polyimide pattern forming method

Info

Publication number
JPS5622428A
JPS5622428A JP9725879A JP9725879A JPS5622428A JP S5622428 A JPS5622428 A JP S5622428A JP 9725879 A JP9725879 A JP 9725879A JP 9725879 A JP9725879 A JP 9725879A JP S5622428 A JPS5622428 A JP S5622428A
Authority
JP
Japan
Prior art keywords
film
polyimide
remove
pattern
photosensitive
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP9725879A
Other languages
Japanese (ja)
Inventor
Yoshi Hiramoto
Masuichi Eguchi
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toray Industries Inc
Original Assignee
Toray Industries Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toray Industries Inc filed Critical Toray Industries Inc
Priority to JP9725879A priority Critical patent/JPS5622428A/en
Publication of JPS5622428A publication Critical patent/JPS5622428A/en
Pending legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/038—Macromolecular compounds which are rendered insoluble or differentially wettable
    • G03F7/0387—Polyamides or polyimides

Landscapes

  • Physics & Mathematics (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • General Physics & Mathematics (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)

Abstract

PURPOSE:To remove perfectly a residual film resulting from development inclined to remain on nondeveloped areas, by processing with an etching agent a polyimide pattern obtained by heating a patternized polyimide precursor in thin film. CONSTITUTION:A film of a photosensitive polyimide precursor containing a photosensitive group, such as a vinyl or acrylic group, and a photosensitive compound, such as bichromate or quinonediazide is provided on a substrate, such as a aluminum plate, this film is patternwise exposed to light, and developed to remove the nonexposed areas, then it is heat-processed to convert said precursor pattern into a polyimide pattern. The obtained polyimide pattern is etched to perfectly remove a residual film resulting from development. As this etching agent, hydrazine alone or mixed with ethylene diamine is preferable, and this etching is carried out to an extent of approximate 1/5 film thickness reduction.
JP9725879A 1979-08-01 1979-08-01 Polyimide pattern forming method Pending JPS5622428A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP9725879A JPS5622428A (en) 1979-08-01 1979-08-01 Polyimide pattern forming method

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP9725879A JPS5622428A (en) 1979-08-01 1979-08-01 Polyimide pattern forming method

Publications (1)

Publication Number Publication Date
JPS5622428A true JPS5622428A (en) 1981-03-03

Family

ID=14187518

Family Applications (1)

Application Number Title Priority Date Filing Date
JP9725879A Pending JPS5622428A (en) 1979-08-01 1979-08-01 Polyimide pattern forming method

Country Status (1)

Country Link
JP (1) JPS5622428A (en)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5866940A (en) * 1981-10-19 1983-04-21 Hitachi Ltd Developer for heat resistant photosensitive resin
EP0194470A2 (en) * 1985-03-11 1986-09-17 International Business Machines Corporation Method and composition of matter for improving conductor resolution of microelectronic circuits
JPH07164152A (en) * 1993-10-14 1995-06-27 Esab Group Inc:The Plasma arc torch with interior gas switching means

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS4834039A (en) * 1971-09-03 1973-05-15
US3957512A (en) * 1973-02-22 1976-05-18 Siemens Aktiengesellschaft Method for the preparation of relief structures
JPS5213315A (en) * 1975-07-18 1977-02-01 Gaf Corp Photoresist composition
JPS53127723A (en) * 1977-04-13 1978-11-08 Hitachi Ltd Image formation method

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS4834039A (en) * 1971-09-03 1973-05-15
US3957512A (en) * 1973-02-22 1976-05-18 Siemens Aktiengesellschaft Method for the preparation of relief structures
JPS5213315A (en) * 1975-07-18 1977-02-01 Gaf Corp Photoresist composition
JPS53127723A (en) * 1977-04-13 1978-11-08 Hitachi Ltd Image formation method

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5866940A (en) * 1981-10-19 1983-04-21 Hitachi Ltd Developer for heat resistant photosensitive resin
EP0194470A2 (en) * 1985-03-11 1986-09-17 International Business Machines Corporation Method and composition of matter for improving conductor resolution of microelectronic circuits
JPH07164152A (en) * 1993-10-14 1995-06-27 Esab Group Inc:The Plasma arc torch with interior gas switching means

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