JP6891252B2 - Substrate processing equipment, semiconductor device manufacturing methods, programs and recording media - Google Patents

Description

The present invention relates to a method for manufacturing a substrate processing apparatus and a semiconductor apparatus.

In the substrate processing in the manufacturing process of a semiconductor device (device), for example, a vertical substrate processing apparatus that collectively processes a plurality of substrates is used. When maintaining the board processing device, it is necessary to secure a maintenance area around the board processing device, and in order to secure the maintenance area, the footprint of the board processing device may become large (for example, a patent). Document 1).

Japanese Unexamined Patent Publication No. 2010-283356

The present invention has been made in view of such circumstances, and an object of the present invention is to provide a technique capable of reducing a footprint while securing a maintenance area.

According to one aspect of the invention
A first processing module having a first processing container for processing the substrate,
Is disposed adjacent to the side surface side of the first processing module, and a second processing module having a second processing chamber for processing a substrate,
A transfer chamber which is arranged adjacent to the first processing module and the second processing module and transports a substrate to the first processing container and the second processing container.
First and the exhaust system, and the first processing first supplying a processing gas into the container of the supply system and including first a utility system for evacuating the first processing chamber;
A second exhaust system for exhausting said second processing chamber, and the second processing the second supply system for supplying a processing gas into the container and the including second utility system,
A first final valve provided in a pipe between the first processing container and the first supply system,
A second final valve provided in a pipe between the second processing container and the second supply system is provided.
The transfer chamber and the first utility system are arranged so as to face each other via the first processing module.
The transfer chamber and the second utility system are arranged so as to face each other via the second processing module.
A maintenance area commonly used for the first processing module and the second processing module is formed between the first utility system and the second utility system.
Wherein the pipe length to the first processing chamber from a first final valve, pipe length to the second processing vessel from said second final valve is approximately equal Ku,
A technique is provided in which the substrate processed in the first processing container and the substrate processed in the second processing container are rotated in opposite directions.

According to the present invention, it is possible to reduce the footprint while securing the maintenance area.

It is a top view which shows typically an example of the substrate processing apparatus preferably used in embodiment of this invention. It is a vertical cross-sectional view which shows typically an example of the substrate processing apparatus preferably used in embodiment of this invention. It is a vertical cross-sectional view which shows typically an example of the substrate processing apparatus preferably used in embodiment of this invention. It is a vertical cross-sectional view which shows typically an example of the processing furnace preferably used in embodiment of this invention. It is sectional drawing which shows typically an example of the processing module preferably used in embodiment of this invention.

Hereinafter, non-limiting exemplary embodiments of the present invention will be described with reference to the drawings. In all drawings, the same or corresponding configurations are designated by the same or corresponding reference numerals, and duplicate description is omitted. Further, the storage chamber 9 side described later is the front side (front side), and the transport chambers 6A and 6B side described later are the back side (rear side). Further, the side facing the boundary line (adjacent surface) of the processing modules 3A and 3B described later is the inside, and the side away from the boundary line is the outside.

In the present embodiment, the substrate processing apparatus is configured as a vertical substrate processing apparatus (hereinafter referred to as a processing apparatus) 2 that performs a substrate processing step such as heat treatment as one step of the manufacturing process in the manufacturing method of the semiconductor device (device). Has been done.

As shown in FIGS. 1 and 2, the processing device 2 includes two adjacent processing modules 3A and 3B. The processing module 3A is composed of a processing furnace 4A and a transfer chamber 6A. The processing module 3B is composed of a processing furnace 4B and a transfer chamber 6B. The transport chambers 6A and 6B are arranged below the processing furnaces 4A and 4B, respectively. A transfer chamber 8 provided with a transfer machine 7 for transferring the wafer W is arranged adjacent to the front side of the transfer chambers 6A and 6B. A storage chamber 9 for storing a pod (hoop) 5 for storing a plurality of wafers W is connected to the front side of the transfer chamber 8. An I / O port 22 is installed on the entire surface of the storage chamber 9, and the pod 5 is carried in and out of the processing device 2 via the I / O port 22.

Gate valves 90A and 90B are installed on the boundary wall (adjacent surface) between the transfer chambers 6A and 6B and the transfer chamber 8, respectively. Pressure detectors are installed in the transfer chamber 8 and the transfer chambers 6A and 6B, respectively, and the pressure in the transfer chamber 8 is set to be lower than the pressure in the transfer chambers 6A and 6B. ing. Oxygen concentration detectors are installed in the transfer chamber 8 and the transport chambers 6A and 6B, respectively, and the oxygen concentration in the transfer chamber 8A and the transport chambers 6A and 6B is higher than the oxygen concentration in the atmosphere. Is also kept low. A clean unit 62C that supplies clean air into the transfer chamber 8 is installed on the ceiling of the transfer chamber 8 so that, for example, an inert gas is circulated in the transfer chamber 8 as clean air. It is configured. By circulating and purging the inside of the transfer chamber 8 with an inert gas, the inside of the transfer chamber 8 can be made into a clean atmosphere. With such a configuration, it is possible to prevent particles and the like in the transfer chambers 6A and 6B from being mixed into the transfer chamber 8, and naturally on the wafer W in the transfer chamber 8 and the transfer chambers 6A and 6B. It is possible to suppress the formation of an oxide film.

Since the processing module 3A and the processing module 3B have the same configuration, only the processing module 3A will be described below as a representative.

As shown in FIG. 4, the processing furnace 4A includes a cylindrical reaction tube 10A and a heater 12A as a heating means (heating mechanism) installed on the outer periphery of the reaction tube 10A. The reaction tube is formed of, for example, quartz or SiC. Inside the reaction tube 10A, a processing chamber 14A for processing the wafer W as a substrate is formed. A temperature detection unit 16A as a temperature detector is installed in the reaction tube 10A. The temperature detection unit 16A is erected along the inner wall of the reaction tube 10A.

The gas used for substrate processing is supplied into the processing chamber 14A by the gas supply mechanism 34A as a gas supply system. The gas supplied by the gas supply mechanism 34A is changed according to the type of film to be formed. Here, the gas supply mechanism 34A includes a raw material gas supply unit, a reaction gas supply unit, and an inert gas supply unit. The gas supply mechanism 34A is housed in a supply box 72A, which will be described later.

The raw material gas supply unit includes a gas supply pipe 36a, and the gas supply pipe 36a is provided with a mass flow controller (MFC) 38a which is a flow rate controller (flow control unit) and a valve 40a which is an on-off valve in order from the upstream direction. Has been done. The gas supply pipe 36a is connected to a nozzle 44a penetrating the side wall of the manifold 18. The nozzle 44a is erected in the reaction tube 10 in the vertical direction, and a plurality of supply holes that open toward the wafer W held by the boat 26 are formed. The raw material gas is supplied to the wafer W through the supply hole of the nozzle 44a.

Hereinafter, with the same configuration, the reaction gas is supplied to the wafer W from the reaction gas supply unit via the supply pipe 36b, the MFC 38b, the valve 40b, and the nozzle 44b. From the inert gas supply unit, the inert gas is supplied to the wafer W via the supply pipes 36c, 36d, MFC38c, 38d, valves 40c, 40d and nozzles 44a, 44b.

A cylindrical manifold 18A is connected to the lower end opening of the reaction tube 10A via a sealing member such as an O-ring to support the lower end of the reaction tube 10A. The lower end opening of the manifold 18A is opened and closed by a disk-shaped lid 22A. A sealing member such as an O-ring is installed on the upper surface of the lid portion 22A, whereby the inside of the reaction tube 10A and the outside air are airtightly sealed. A heat insulating portion 24A is placed on the lid portion 22A.

An exhaust pipe 46A is attached to the manifold 18A. The exhaust pipe 46A is provided via a pressure sensor 48A as a pressure detector (pressure detection unit) for detecting the pressure in the processing chamber 14A and an APC (Auto Pressure Controller) valve 40A as a pressure regulator (pressure regulator). , A vacuum pump 52A as a vacuum exhaust device is connected. With such a configuration, the pressure in the processing chamber 14A can be set to the processing pressure according to the processing. The exhaust system A is mainly composed of the exhaust pipe 46A, the APC valve 40A, and the pressure sensor 48A. The exhaust system A is housed in an exhaust box 74A, which will be described later.

The processing chamber 14A internally houses a boat 26A as a substrate holder that vertically supports a plurality of wafers W, for example, 25 to 150 wafers W in a shelf shape. The boat 26A is supported above the heat insulating portion 24A by a rotating shaft 28A penetrating the lid portion 22A and the heat insulating portion 24A. The rotating shaft 28A is connected to a rotating mechanism 30A installed below the lid 22A, and the rotating shaft 28A is configured to be rotatable with the inside of the reaction tube 10A airtightly sealed. The lid portion 22 is driven in the vertical direction by a boat elevator 32A as an elevating mechanism. As a result, the boat 26A and the lid 22A are integrally raised and lowered, and the boat 26A is carried in and out of the reaction tube 10A.

The transfer of the wafer W to the boat 26A is performed in the transport chamber 6A. As shown in FIG. 3, a clean unit 60A is installed on one side surface of the transport chamber 6A (the outer side surface of the transport chamber 6A, the side surface opposite to the side surface facing the transport chamber 6B), and the transport chamber 6A It is configured to circulate clean air (eg, an inert gas) inside. The inert gas supplied into the transport chamber 6A is exhausted from the inside of the transport chamber 6A by the exhaust unit 62A installed on the side surface facing the clean unit 60A (the side surface facing the transport chamber 6B) across the boat 26A. It is resupplied from the clean unit 60A into the transport chamber 6A (circulation purge). The pressure in the transport chamber 6A is set to be lower than the pressure in the transfer chamber 8. Further, the oxygen concentration in the transport chamber 6A is set to be lower than the oxygen concentration in the atmosphere. With such a configuration, it is possible to prevent the formation of a natural oxide film on the wafer W during the transfer operation of the wafer W.

A controller 100 for controlling these is connected to the rotation mechanism 30A, the boat elevator 32A, the MFCs 38a to d and the valves 40a to d, and the APC valve 50A of the gas supply mechanism 34A. The controller 100 is composed of, for example, a microprocessor (computer) including a CPU, and is configured to control the operation of the processing device 2. An input / output device 102 configured as, for example, a touch panel is connected to the controller 100. One controller 100 may be installed in each of the processing module 3A and the processing module 3B, or one controller 100 may be installed in common.

A storage unit 104 as a storage medium is connected to the controller 100. The storage unit 104 readablely stores a control program that controls the operation of the processing device 10 and a program (also referred to as a recipe) for causing each component of the processing device 2 to execute processing according to processing conditions. The program.

The storage unit 104 may be a storage device (hard disk or flash memory) built in the controller 100, or a portable external recording device (magnetic tape, magnetic disk such as flexible disk or hard disk, CD or DVD, etc.). It may be an optical disk, a magneto-optical disk such as MO, or a semiconductor memory such as a USB memory or a memory card). Further, the program may be provided to the computer by using a communication means such as the Internet or a dedicated line. The program is read from the storage unit 104 by an instruction from the input / output device 102 or the like as necessary, and the controller 100 executes a process according to the read recipe, so that the processing device 2 is a controller. Under 100 controls, the desired process is performed. The controller 100 is housed in the controller boxes 76A and 76B.

Next, a process of forming a film on the substrate (film formation process) using the above-mentioned processing device 2 will be described. _{Here, by supplying DCS (SiH 2} Cl ₂ : dichlorosilane) gas as a raw material gas _{and O 2} (oxygen) gas as a reaction gas to the wafer W, silicon oxidation (SiO _{2) is performed on the wafer W.} ) An example of forming a film will be described. In the following description, the operation of each part constituting the processing device 2 is controlled by the controller 100.

(Wafer charge and boat load)
The gate valve 90A is opened and the wafer W is conveyed to the boat 20A. When a plurality of wafers W are loaded (wafer charged) into the boat 26A, the gate valve 90A is closed. The boat 26A is carried into the processing chamber 14 (boat load) by the boat elevator 32A, and the lower opening of the reaction tube 10A is hermetically closed (sealed) by the lid 22A.

(Pressure adjustment and temperature adjustment)
Vacuum exhaust (vacuum exhaust) is performed by the vacuum pump 52A so that the inside of the processing chamber 14A has a predetermined pressure (vacuum degree). The pressure in the processing chamber 14A is measured by the pressure sensor 48A, and the APC valve 50A is feedback-controlled based on the measured pressure information. Further, the wafer W in the processing chamber 14A is heated by the heater 12A so as to have a predetermined temperature. At this time, the state of energization of the heater 12A is feedback-controlled based on the temperature information detected by the temperature detection unit 16A so that the processing chamber 14A has a predetermined temperature distribution. Further, the rotation mechanism 30A starts the rotation of the boat 26A and the wafer W.

(Film film processing)
[Raw material gas supply process]
When the temperature in the processing chamber 14A stabilizes at a preset processing temperature, DCS gas is supplied to the wafer W in the processing chamber 14A. The DCS gas is controlled by the MFC 38a so as to have a desired flow rate, and is supplied into the processing chamber 14A via the gas supply pipe 36a and the nozzle 44a.

[Raw material gas exhaust process]
Next, the supply of DCS gas is stopped, and the inside of the processing chamber 14A is evacuated by the vacuum pump 52A. At this time, it may be supplied with N ₂ gas into the processing chamber 14A as an inert gas from the inert gas supply section (inert gas purge).

[Reaction gas supply process]
_{Next, O 2} gas is supplied to the wafer W in the processing chamber 14A. The O ₂ gas is controlled by the MFC 38b so as to have a desired flow rate, and is supplied into the processing chamber 14A via the gas supply pipe 36b and the nozzle 44b.

[Reaction gas exhaust process]
Next, _{the supply of O 2} gas is stopped, and the inside of the processing chamber 14A is evacuated by the vacuum pump 52A. At this time, it may be supplied with N ₂ gas into the process chamber 14A from the inert gas supply section (inert gas purge).

By performing the cycle of performing the above-mentioned four steps a predetermined number of times (one or more times), a SiO ₂ film having a predetermined composition and a predetermined film thickness can be formed on the wafer W.

(Boat unloading and wafer discharge)
After forming a film having a predetermined film thickness, N ₂ gas is supplied from the inert gas supply unit, the inside of the processing chamber 14A is _{replaced with N 2} gas, and the pressure in the processing chamber 14A is returned to normal pressure. After that, the lid portion 22A is lowered by the boat elevator 32A, and the boat 26A is carried out from the reaction tube 10A (boat unloading). After that, the processed wafer W is taken out from the boat 26A (wafer discharge).

After that, the wafer W may be stored in the pod 5 and carried out of the processing apparatus 2, or may be conveyed to the processing furnace 4B, and substrate processing such as annealing may be continuously performed. When the wafer W is continuously processed in the processing furnace 4B after the wafer W is processed in the processing furnace 4A, the gate valves 90A and 90B are opened, and the wafer W is directly conveyed from the boat 26A to the boat 26B. Subsequent loading and unloading of the wafer W into and out of the processing furnace 4B is performed in the same procedure as the substrate processing by the processing furnace 4A described above. Further, the substrate processing in the processing furnace 4B is performed, for example, in the same procedure as the substrate processing in the processing furnace 4A described above.

Examples of processing conditions for forming the _{SiO 2} film on the wafer W include the following.
Processing temperature (wafer temperature): 300 ° C to 700 ° C,
Processing pressure (processing chamber pressure) 1 Pa to 4000 Pa,
DCS gas: 100 sccm-10000 sccm,
O ₂ gas: 100 sccm-10000 sccm,
N ₂ gas: 100 sccm-10000 sccm,
By setting each processing condition to a value within each range, the film forming process can be appropriately advanced.

Next, the back configuration of the processing device 2 will be described.
For example, if the boat 26 is damaged, the boat 26 needs to be replaced. Further, when the reaction tube 10 is damaged or when the reaction tube 10 needs to be cleaned, it is necessary to remove the reaction tube 10. In this way, when performing maintenance in the transport chamber 6 and the processing furnace 4, the maintenance is performed from the maintenance area on the back side of the processing device 2.

As shown in FIG. 1, maintenance ports 78A and 78B are formed on the back side of the transport chambers 6A and 6B, respectively. The maintenance port 78A is formed on the transport chamber 6B side of the transport chamber 6A, and the maintenance port 78B is formed on the transport chamber 6A side of the transport chamber 6B. The maintenance ports 78A and 78B are opened and closed by the maintenance doors 80A and 80B. The maintenance doors 80A and 80B are configured to be rotatable around the hinges 82A and 82B. The hinge 82A is installed on the transport chamber 6B side of the transport chamber 6A, and the hinge 82B is installed on the transport chamber 6A side of the transport chamber 6B. That is, the hinges 82A and 82B are installed so as to be adjacent to each other in the vicinity of the inner corners located on the adjacent surfaces on the back side of the transport chambers 6A and 6B. The maintenance area is formed on the processing module 3B side on the back surface of the processing module 3A and the processing module 3A side on the back surface of the processing module 3B.

As shown by the imaginary line, the maintenance doors 80A and 80B are horizontally rotated around the hinges 82A and 82B on the rear side of the transport chambers 6A and 6B, so that the rear maintenance ports 78A and 78B are opened. The maintenance door 80A is configured to open up to 180 ° to the left toward the transport chamber 6A. The maintenance door 80B is configured so that it can be opened up to 180 ° to the right toward the transport chamber 6B. That is, the maintenance door 80A rotates clockwise and the maintenance door 80B rotates counterclockwise toward the transport chamber 6A. In other words, the maintenance doors 80A and 80B are rotated in opposite directions. The maintenance doors 80A and 80B are removable and may be removed for maintenance.

Utility systems 70A and 70B are installed near the back surfaces of the transport chambers 6A and 6B. The utility systems 70A and 70B are arranged so as to face each other with the maintenance rear interposed therebetween. When the utility systems 70A and 70B are maintained, the maintenance is performed from the inside of the utility systems 70A and 70B, that is, the space (maintenance area) between the utility systems 70A and 70B. The utility systems 70A and 70B are composed of exhaust boxes 74A and 74B, supply boxes 72A and 72B, and controller boxes 76A and 76B, respectively, in this order from the housing side (conveyor chambers 6A and 6B side). The maintenance ports of the utility systems 70A and 70B are formed inside (maintenance area side), respectively. That is, the maintenance ports of the utility systems 70A and 70B are formed so as to face each other.

The exhaust box 74A is arranged at the outer corner portion located on the back surface of the transport chamber 6A on the side opposite to the transport chamber 6B. The exhaust box 74B is arranged at the outer corner portion located on the back surface of the transport chamber 6B on the side opposite to the transport chamber 6A. That is, the exhaust boxes 74A and 74B are installed flat (smoothly) so that the outer side surfaces of the transport chambers 6A and 6B and the outer side surfaces of the exhaust boxes 74A and 74B are connected to a flat surface. The supply box 72A is arranged adjacent to the side of the exhaust box 74A adjacent to the transport chamber 6A and the side opposite to the side. The supply box 72B is arranged adjacent to the side of the exhaust box 74B adjacent to the transport chamber 6B and the side opposite to the side.

In top view, the thickness (width in the short side direction) of the exhaust boxes 74A and 74B is smaller than the thickness of the supply boxes 72A and 72B. In other words, the supply boxes 72A and 72B protrude toward the maintenance area side more than the exhaust boxes 74A and 74B. Since the gas integration system and a large number of incidental facilities are arranged in the supply boxes 72A and 72B, the thickness may be larger than that of the exhaust boxes 72A and 72B. Therefore, by installing the exhaust boxes 72A and 72B on the housing side, a wide maintenance area in front of the maintenance doors 80A and 80B can be secured. That is, in the top view, the distance between the exhaust boxes 74A and 74B is larger than the distance between the supply boxes 72A and 72B, so that the exhaust boxes are more than the supply boxes 72A and 72B installed on the housing side. When the 74A and 74B are installed on the housing side, a wider maintenance space can be secured.

As shown in FIG. 3, the final valves (valves 40a and 40b located at the bottom of the gas supply system) of the gas supply mechanisms 34A and 34B are arranged above the exhaust boxes 74A and 74B. Preferably, it is arranged directly above (directly above) the exhaust boxes 74A and 74B. With such a configuration, even if the supply boxes 72A and 72B are installed away from the housing side, the pipe length from the final valve to the processing chamber can be shortened, so that the quality of film formation can be improved. it can.

As shown in FIG. 5, the processing module 3A, 3B and utility system 70A, each configuration of 70B, processing modules 3A, are disposed plane-symmetrically with respect to the adjacent surface _{S 1} of 3B. The reaction pipes 10A and 10B are installed so that the exhaust pipes 46A and 46B face the corners, that is, the exhaust pipes 46A and 46B face the exhaust boxes 74A and 74B. Further, the pipes are arranged so that the pipe length from the final valve to the nozzle is substantially the same in the processing modules 3A and 3B. Further, as shown by the arrows in FIG. 5, the rotation directions of the wafer W are also configured to be opposite to each other in the processing furnaces 4A and 4B.

Next, maintenance of the processing device 2 will be described.
An interlock is set so that the maintenance door 80A cannot be opened when the inside of the transport chamber 6A is circulated and purged with an inert gas. Further, an interlock is set so that the maintenance door 80A cannot be opened even when the oxygen concentration in the transport chamber 6A is lower than the oxygen concentration at atmospheric pressure. The same applies to the maintenance door 80B. Further, when the maintenance doors 80A and 80B are open, an interlock is set so that the gate valves 90A and 90B cannot be opened. When the gate valves 90A and 90B are opened with the maintenance doors 80A and 80B open, the gate valve is opened by setting the entire processing device 2 to the maintenance mode and then turning on the separately installed maintenance switch. The interlock related to 90A and 90B is released, and the gate valves 90A and 90B can be opened.

When the maintenance door 80A is opened, the air atmosphere flows into the transport chamber 6A from the clean unit 62A in order to raise the oxygen concentration in the transport chamber 6A to be equal to or higher than the oxygen concentration in the atmosphere, preferably to the oxygen concentration in the atmosphere. Let me. At this time, the circulation purge in the transport chamber 6A is released so that the pressure in the transport chamber 6A does not become higher than the pressure in the transfer chamber 8, and the atmosphere in the transport chamber 6A is exhausted to the outside of the transport chamber 6A. At the same time, the rotation speed of the fan of the clean unit 62A is lowered to be lower than the rotation speed at the time of circulation purging to control the inflow amount of the atmosphere into the transport chamber 6A. By controlling in this way, the pressure in the transport chamber 6A can be maintained lower than the pressure in the transfer chamber 8 while increasing the oxygen concentration in the transport chamber 6A.

When the oxygen concentration in the transport chamber 6A becomes equal to the oxygen concentration in atmospheric pressure, the interlock is released and the maintenance door 80A can be opened. At this time, even if the oxygen concentration in the transport chamber 6A is equal to the oxygen concentration in the atmospheric pressure, if the pressure in the transport chamber 6A is higher than the pressure in the transfer chamber 8, the maintenance door 80A cannot be opened. Is set to. When the maintenance door 80A is opened, the rotation speed of the fan of the clean unit 62A is increased to at least the rotation speed at the time of circulation purging. More preferably, the rotation speed of the fan of the clean unit 62A is maximized.

The maintenance in the transfer chamber 9 is performed from the maintenance port 78C formed in front of the transfer chamber 9 and in a portion where the pod opener is not installed. The maintenance port 78C is configured to be opened and closed by a maintenance door. As described above, when the entire processing device 2 is set to the maintenance mode, the gate valves 90A and 90B can be opened and maintenance can be performed from the gate valves 90A and 90B side. That is, the maintenance in the transfer chamber 8 can be performed from either the front of the device or the back of the device.

<Effect of this embodiment>
According to this embodiment, one or more of the following effects can be obtained.

(1) By arranging the utility system from the housing side to the exhaust box and the supply box, the maintenance area on the back surface of the processing device can be widened. With such a configuration, the maintenance port on the back surface of the transport chamber can be formed widely, and the maintainability can be improved. Further, by widening the maintenance area on the back surface of the processing device, it is not necessary to secure maintenance areas on both sides of the device, so that the footprint of the device can be reduced.

(2) By installing the utility systems of the left and right processing modules facing each other on both outer side surfaces of the processing apparatus, the space on the back surface of the apparatus can be used as a maintenance area common to the left and right processing modules. For example, in a conventional device, the supply box and the exhaust box may be installed facing each other at both ends of the back surface of the device. When two devices having such a configuration are arranged side by side, one exhaust box and the other supply box are adjacent to each other at the boundary line between the two devices. On the other hand, according to the present embodiment, since the utility system is not arranged at the boundary line between the two processing modules, a wide maintenance area can be secured.

(3) By installing the final valve of the gas supply system above the exhaust box, the pipe length from the final valve to the processing chamber can be shortened. That is, it is possible to suppress gas delays and flow rate fluctuations during gas supply, and it is possible to improve the quality of film formation. Generally, the quality of film formation is affected by gas supply conditions such as gas flow rate and gas pressure, so it is preferable to install a supply box near the housing in order to stably supply gas into the reaction tube. However, in the present invention, by installing the final valve near the reaction tube, it is possible to arrange the supply box at a position away from the housing without adversely affecting the quality of film formation. Further, by arranging the exhaust box below the exhaust pipe extending from the processing container (reaction pipe) and arranging the final valve directly above it, the pipe length to the processing chamber can be shortened. Further, by installing the final valve directly above the exhaust box, maintenance such as replacement of the final valve becomes easy.

(4) By installing each configuration line-symmetrically with the boundary of the processing modules as a boundary, it is possible to suppress variations in the quality of film formation between the left and right processing modules. That is, by installing each configuration, utility system, gas supply pipe arrangement, and exhaust pipe arrangement in the processing module line-symmetrically, the pipe length from the supply box to the reaction pipe and the pipe length from the reaction pipe to the exhaust box can be reduced. The left and right processing modules can be made substantially the same. As a result, the film can be formed on the left and right processing modules under the same conditions, and the quality of the film can be made uniform, so that the productivity can be improved.

(5) By installing the maintenance door on the boundary side between the two processing modules and configuring it to rotate toward the other processing module, the maintenance door can be opened 180 degrees, and the back of the transport chamber. Since the maintenance port can be formed widely, the maintainability can be improved.

(6) It is possible to perform maintenance on the other processing module and the transfer chamber while performing substrate processing on one processing module. As a result, maintenance can be performed without stopping the film forming process, so that the operating rate of the apparatus can be increased and the productivity can be improved.

(7) When opening the maintenance door of one of the processing modules, the pressure in the transport chamber is kept lower than the pressure in the transfer chamber, and the oxygen concentration in the transport chamber is raised to the oxygen concentration at atmospheric pressure. It is possible to suppress the inflow of air pressure from the transport room to the loading room side to the transfer room. In addition, after opening the maintenance door, the rotation speed of the fan of the clean unit in the transport room is higher than that during the circulation purge, so that the atmosphere from the transport room to the transfer room even after the maintenance door is opened (after the transport room is opened to the atmosphere). Can be suppressed from flowing in. With such a configuration, even if the maintenance door is opened by one processing module, the other processing module can be continuously operated. That is, even if maintenance is performed in the transfer room, the clean atmosphere in the transfer room can be maintained, and the increase in oxygen concentration in the transfer room can be suppressed, which adversely affects the processing module in operation. It is possible to maintain a stopped processing module without exerting any effect. As a result, maintenance of the other processing module can be performed while one processing module is in operation, so that it is not necessary to stop the operation of the entire processing device at the time of maintenance, and productivity can be improved. ..

The embodiments of the present invention have been specifically described above. However, the present invention is not limited to the above-described embodiment, and various modifications can be made without departing from the gist thereof.

For example, in the above-described embodiment, an example in which a DCS gas is used as a raw material gas has been described, but the present invention is not limited to such an embodiment. For example, as the raw material gas, in addition to DCS gas, an inorganic halosilane raw material such as _{HCD (Si 2} Cl ₆ : hexachlorodisilane) gas, MCS (SiH ₃ Cl: monochlorosilane) gas, and TCS (SiHCl _{3: trichlorosilane) gas.} gas _{and, 3DMAS (Si [N (CH} 3) 2] 3 H: tris (dimethylamino) silane) _{gas, BTBAS (SiH 2 [NH (} C 4 H 9)] 2: Bicester rice butylaminosilane) halogen-free, such as gas of or amino-based (amine) silane source gas, MS (SiH _4: monosilane) gas, DS _(Si 2 _{H 6:} disilane) can be used inorganic silane source gas of halogen-free, such as gas.

For example, in the above-described embodiment, an example of forming a _{SiO 2 film has been described.} However, the present invention is not limited to such aspects. For example, in addition to these, or in addition to, ammonia (NH ₃₎ nitrogen (N) containing gas (gas nitriding) such as a gas, propylene _(C 3 _{H 6)} carbon (C) containing a gas such as a gas, trichloride A SiN film, a SiON film, a SiOCN film, a SiOC film, a SiCN film, a SiBN film, a SiBCN film or the like can be formed by using a boron (B) -containing gas such as a boron (BCl _{3) gas.} Even when these film formations are performed, the film formation can be performed under the same processing conditions as those in the above-described embodiment, and the same effects as those in the above-described embodiment can be obtained.

Further, for example, in the present invention, titanium (Ti), zirconium (Zr), hafnium (Hf), tantalum (Ta), niobium (Nb), aluminum (Al), molybdenum (Mo), and tungsten (W) are placed on the wafer W. ) And the like, that is, when forming a metal-based film, it can be suitably applied.

In the above-described embodiment, an example of depositing a film on the wafer W has been described, but the present invention is not limited to such an embodiment. For example, it can be suitably applied to the case where the wafer W, the film formed on the wafer W, or the like is subjected to treatments such as oxidation treatment, diffusion treatment, annealing treatment, and etching treatment.

In addition, the above-described embodiments and modifications can be used in combination as appropriate. The processing conditions at this time can be, for example, the same processing conditions as those in the above-described embodiment and modification.

3 ... Processing module 72 ... Supply box 74 ... Exhaust box 76 ... Controller box

Claims (10)

A first processing module having a first processing container for processing the substrate,
Is disposed adjacent to the side surface side of the first processing module, and a second processing module having a second processing chamber for processing a substrate,
A transfer chamber which is arranged adjacent to the first processing module and the second processing module and transports a substrate to the first processing container and the second processing container.
First and the exhaust system, and the first processing first supplying a processing gas into the container of the supply system and including first a utility system for evacuating the first processing chamber;
A second exhaust system for exhausting said second processing chamber, and the second processing the second supply system for supplying a processing gas into the container and the including second utility system,
A first final valve provided in a pipe between the first processing container and the first supply system,
A second final valve provided in a pipe between the second processing container and the second supply system is provided.
The transfer chamber and the first utility system are arranged so as to face each other via the first processing module.
The transfer chamber and the second utility system are arranged so as to face each other via the second processing module.
A maintenance area commonly used for the first processing module and the second processing module is formed between the first utility system and the second utility system.
Wherein the pipe length to the first processing chamber from a first final valve, pipe length to the second processing vessel from said second final valve is approximately equal Ku,
A substrate processing apparatus in which a substrate processed in the first processing container and a substrate processed in the second processing container are rotated in opposite directions to each other. The first utility system is formed so that the width on the side closer to the first processing module is smaller than the width on the far side.
The second utility system is formed so that the width on the side closer to the second processing module is smaller than the width on the far side.
The substrate processing apparatus according to claim 1 , wherein the distance between the first utility system and the second utility system is larger on the near side than on the far side. The first utility system includes an outer side surface of the first processing module in the direction opposite to the second processing module and an outer side surface of the first utility system in the direction opposite to the second processing module. Installed to be flat,
The second utility system includes an outer side surface of the second processing module in the direction opposite to the first processing module and an outer side surface of the second utility system in the direction opposite to the first processing module. The substrate processing apparatus according to any one of claims 1 to 2, which is installed so as to be flat. The first exhaust system is housed in a first exhaust box arranged at a position closest to the first processing module of the first utility system.
The second exhaust system according to any one of claims 1 to 3, which is housed in a second exhaust box arranged at a position closest to the second processing module of the second utility system. Board processing equipment. The first processing vessel, an exhaust pipe attached to the first processing chamber is installed so as to face the direction of the first exhaust system,
Said second processing chamber, the second processing is attached to the container the exhaust pipe, the substrate of any one of the second exhaust system according to claim 1 to 4 Ru is installed so as to face the direction of the Processing equipment. The first utility system and the second utility system are provided with first and second controller boxes for accommodating controllers at positions farthest from the first processing module and the second processing module, respectively. The substrate processing apparatus according to any one of claims 1 to 5. The first processing module and the second processing module are arranged symmetrically with respect to the adjacent surfaces of the first processing module and the second processing module, and the first utility system and the second processing module are arranged. The substrate processing apparatus according to any one of claims 1 to 6, wherein the utility system is arranged symmetrically with respect to the adjacent surface. The substrate of the first processing vessel of the first processing module, wherein stored in the first processing first utility system disposed adjacent to the module, the processing in the first processing chamber while supplying gas from the first supply system for supplying gas, evacuating the first processing vessel by a first exhaust system housed in the first utility system, the first processing for processing a substrate Process and
A step of transporting the substrate the on the side surface side of the first processing module is positioned adjacent, to the second processing module having a second processing chamber for processing a substrate, through a transfer chamber,
In the second processing container, which is housed in a second utility system arranged adjacent to the second processing module with respect to the substrate in the second processing container of the second processing module. while supplying gas from the second supply system for supplying a process gas into and exhausting the second the second processing vessel by an exhaust system that is housed in the second utility system, the processing a substrate 2 processing steps and
Have,
A maintenance area commonly used for the first processing module and the second processing module is formed between the first utility system and the second utility system.
In the first processing step, the gas is supplied via a first final valve provided in a pipe between the first processing container and the first supply system.
In the second processing step, the distance of the pipe between the second processing container and the second supply system to the second processing container is the distance between the first processing container and the first final valve. The gas is supplied through a second final valve located at a position equal to the distance between .
A method for manufacturing a semiconductor device in which a substrate processed in the second processing container in the second processing step is rotated in a direction opposite to that of the substrate processed in the first processing container in the first processing step. A first processing module having a first processing container for processing the substrate,
A second processing module arranged adjacent to the side surface side of the first processing module and having a second processing container for processing the substrate, and a second processing module.
A transfer chamber which is arranged adjacent to the first processing module and the second processing module and transports a substrate to the first processing container and the second processing container.
A first utility system including a first exhaust system that exhausts the inside of the first processing container and a first supply system that supplies the processing gas into the first processing container.
A second utility system including a second exhaust system that exhausts the inside of the second processing container and a second supply system that supplies the processing gas into the second processing container .
A first final valve provided in a pipe between the first processing container and the first supply system,
A second final valve provided in a pipe between the second processing container and the second supply system is provided.
The transfer chamber and the first utility system are arranged so as to face each other via the first processing module.
The transfer chamber and the second utility system are arranged so as to face each other via the second processing module.
A maintenance area commonly used for the first processing module and the second processing module is formed between the first utility system and the second utility system.
The piping length from the first final valve to the first processing container and the piping length from the second final valve to the second processing container are substantially equal to each other by the substrate processing apparatus.
While supplying gas from the first supply system to the substrate in the first processing container of the first processing module, the inside of the first processing container is exhausted by the first exhaust system. , The first processing step of processing while rotating the substrate in the first direction,
While supplying gas from the second supply system to the substrate in the second processing container of the second processing module, the inside of the second processing container is exhausted by the second exhaust system. A second processing step of processing the substrate while rotating it in a direction opposite to the first direction.
A program stored on a computer-readable recording medium. A first processing module having a first processing container for processing the substrate,
A second processing module arranged adjacent to the side surface side of the first processing module and having a second processing container for processing the substrate, and a second processing module.
A transfer chamber which is arranged adjacent to the first processing module and the second processing module and transports a substrate to the first processing container and the second processing container.
A first utility system including a first exhaust system that exhausts the inside of the first processing container and a first supply system that supplies the processing gas into the first processing container.
A second utility system including a second exhaust system that exhausts the inside of the second processing container and a second supply system that supplies the processing gas into the second processing container .
A first final valve provided in a pipe between the first processing container and the first supply system,
A second final valve provided in a pipe between the second processing container and the second supply system is provided.
The transfer chamber and the first utility system are arranged so as to face each other via the first processing module.
The transfer chamber and the second utility system are arranged so as to face each other via the second processing module.
A maintenance area commonly used for the first processing module and the second processing module is formed between the first utility system and the second utility system.
The piping length from the first final valve to the first processing container and the piping length from the second final valve to the second processing container are substantially equal to each other by the substrate processing apparatus.
While supplying gas from the first supply system to the substrate in the first processing container of the first processing module, the inside of the first processing container is exhausted by the first exhaust system. , The first processing step of processing while rotating the substrate in the first direction,
While supplying gas from the second supply system to the substrate in the second processing container of the second processing module, the inside of the second processing container is exhausted by the second exhaust system. A second processing step of processing the substrate while rotating it in a direction opposite to the first direction.
A computer-readable recording medium that contains a program that allows you to do this.

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