JP6857259B2 - Measuring device and measuring method - Google Patents

Description

The present invention relates to a measuring device and a measuring method.

Normally, a wet gauge is used for a wet coating film and an electromagnetic film thickness meter is used for a dry coating film to measure the film thickness of a coating film coated on a large steel structure such as a ship. This is a measurement method based on the contact method. On the other hand, it is known that infrared rays are used as a non-contact measurement method. For example, as described in Patent Document 1, production capable of keeping the distance and angle to the measurement target constant. A film thickness measuring device is fixed to the line and used only for inspection of products.

Further, Patent Document 2 describes a film thickness measuring device and a measuring method for a coating film using infrared reflection intensity.

JP-A-63-242375 Japanese Unexamined Patent Publication No. 2016-17164

When a coating film applied to a large steel structure having a complicated shape such as the inside of a ship is to be measured, the measurement by the current contact method requires dangerous work at a high place. There are financial disadvantages to building a foothold for work. Therefore, it is desired to develop a non-contact measurement method. Further, even in cases other than the above, a non-contact method that does not damage the measurement target is preferable.

On the other hand, in the film thickness measuring method using infrared rays, which is a kind of electromagnetic wave, the detectable infrared reflection intensity is affected by the distance from the measurement target and the deviation angle from the front to the measurement target. This effect is not taken into consideration in the conventional infrared film thickness measuring method.

An object of the present invention is to provide a measuring device capable of accurately measuring various parameters by a non-contact method based on the electromagnetic wave reflection intensity from a measurement target, and a related technique thereof.

The first aspect of the present invention is
A non-contact measuring device for the object to be measured,
A detector that measures the intensity of electromagnetic wave reflection from a measurement target irradiated with electromagnetic waves,
A rangefinder that measures the distance from the measurement target,
A deviation angle measuring mechanism that measures the deviation angle between the measurement target and the measuring device from the front,
Is a measuring device including.

The second aspect of the present invention is the aspect described in the first aspect.
It further includes an oscillator that irradiates the measurement target with electromagnetic waves.

A third aspect of the present invention is the aspect described in the second aspect.
The oscillator is a laser diode with a temperature control function.

A fourth aspect of the present invention is the aspect described in the second or third aspect.
A part of the electromagnetic wave emitted from the oscillating unit is taken out, and the output fluctuation of the oscillating unit is monitored by a detector different from the detector.

A fifth aspect of the present invention is the aspect according to any one of the first to fourth aspects.
The deviation angle measuring mechanism calculates the deviation angle based on the distance measured by the range finder.

A sixth aspect of the present invention is the aspect according to any one of the first to fifth aspects.
It is portable.

A seventh aspect of the present invention is the aspect according to any one of the first to sixth aspects.
In addition, it has a polarizing filter.

The eighth aspect of the present invention is the aspect according to any one of the first to seventh aspects.
The electromagnetic wave is invisible light, and visible light is emitted from the rangefinder.

A ninth aspect of the present invention is the aspect according to any one of the first to eighth aspects.
It has a plurality of the distance meters.

The tenth aspect of the present invention is the aspect described in the ninth aspect.
It also includes an oscillator that irradiates the measurement target with electromagnetic waves.
All of the rangefinders are arranged on the same plane with the same distance from the oscillating unit, and the oscillating unit is arranged at the center of gravity of the position of the rangefinder.

The eleventh aspect of the present invention is the aspect according to any one of the first to tenth aspects.
The wavelength range of the electromagnetic wave is more than 780 nm and less than 3,000 μm.

A twelfth aspect of the present invention is the aspect according to any one of the first to eleventh aspects.
Further, it includes a calculation mechanism for calculating the thickness of the measurement target from the electromagnetic wave reflection intensity from the measurement target, the distance from the measurement target, and the deviation angle between the measurement target and the device.

A thirteenth aspect of the present invention is the aspect according to any one of the first to eleventh aspects.
Further, it includes a calculation mechanism for calculating the density of the measurement target from the electromagnetic wave reflection intensity from the measurement target, the distance from the measurement target, and the deviation angle between the measurement target and the device.

A fourteenth aspect of the present invention is
A measuring method for measuring the thickness of a measurement target using the measuring device according to the twelfth aspect.

A fifteenth aspect of the present invention is
A measuring method for measuring the concentration of a measurement target using the measuring device according to the thirteenth aspect.

According to the present invention, it is possible to provide a measuring device capable of accurately measuring various parameters by a non-contact method based on the electromagnetic wave reflection intensity from a measurement target, and related technology thereof.

It is a schematic perspective view of the measuring apparatus of this embodiment. It is a schematic side view of the measuring apparatus of this embodiment. It is a graph which shows the relationship between the infrared reflection intensity and the thickness (film thickness) with respect to the same kind of substance (coating film X which will be described later) as the measurement target in this Example. It is a graph which shows the relationship between the infrared reflection intensity with respect to the substance of the same kind as the measurement target in this Example, and the distance from the substance. It is a graph which shows the relationship between the infrared reflection intensity with respect to the substance of the same kind as the measurement target in this Example, and the deviation angle from the face-to-face with respect to the substance of a measuring apparatus.

Hereinafter, an embodiment of the present invention will be described with reference to FIGS. 1 and 2. A modification will be described later. In the present specification, "~" refers to a predetermined value or more and a predetermined value or less.

The measuring device 1 illustrated in the present embodiment includes at least the following configurations.
・ Oscillation source 11 that irradiates the measurement target with electromagnetic waves
・ Detector 12 that measures the electromagnetic wave reflection intensity from the measurement target
-Distance meter 13 (13a to 13d) that measures the distance from the measurement target
A deviation angle measuring mechanism 14 that measures the deviation angle between the measurement target and the measuring device 1 from the front.

Further, in the present specification, the "deviation angle from the facing" is defined as the position where the optical axis of the electromagnetic wave emitted from the measuring device 1 is perpendicular to the measurement target, and is defined as "facing" from the optical axis. The deviation is represented by an angle. Hereinafter, unless otherwise specified, the deviation angle means the above.

Further, the electromagnetic wave in the present specification is a wave generated by a periodic change of the electromagnetic field, and includes radio waves, infrared rays, visible light, ultraviolet rays, and radiation from the longest wavelength. The type of electromagnetic wave adopted by the oscillation source of the measuring device 1 in the present embodiment is not particularly limited as long as various parameters can be measured accurately by a non-contact method. In this embodiment, as an example, an electromagnetic wave in a wavelength range from 780 nm to 3,000 μm (3 mm) is illustrated. In the present specification, electromagnetic waves in this wavelength range are referred to as infrared rays for convenience of explanation.

Various parameters measured by the measuring device 1 in the present embodiment can be obtained based on the infrared reflection intensity from the measurement target. The various parameters are not particularly limited, and examples thereof include "thickness" or "density", or infrared reflection intensity itself.

The "thickness" referred to here is the thickness of the coating film to be measured, the rust preventive oil, the resin film, etc., and may be either the thickness of the wet coating film or the dry film thickness. The measurement target is not particularly limited as long as the infrared reflection intensity changes according to the thickness of the measurement target when the measurement target is irradiated with infrared rays.

In this embodiment, for convenience of explanation, a case where "thickness" is measured will be illustrated. In the present embodiment, a case where a coating film is a measurement target is illustrated, but the present invention is not limited to the film thickness measurement, and the preferred examples described below are also effective when measuring the concentration. is there. The case of measuring the concentration will be described in detail later.

As shown in FIG. 1, the measuring device 1 in the present embodiment is roughly divided into a substantially cubic housing 10 in which each mechanism is housed, and an arc extending outward from the upper surface 10a of the housing. It has a handle 20 (that is, a handle when the measuring device 1 is carried out) and is portable. The handle 20 is provided with an infrared oscillation button 21 for irradiating infrared rays.

The oscillation source 11 that irradiates infrared rays is provided in the housing 10 and has a structure capable of irradiating the measurement target with infrared rays from the front surface 10b of the housing. At this time, the optical axis of the infrared ray is the same plane on which the front surface 10b of the housing (more specifically, the four range finders 13a, 13b, 13c, 13d (the four are collectively referred to by reference numeral 13) are arranged). ), The oscillation source 11 is arranged so as to be perpendicular to). Further, in the present embodiment, the infrared emitting portion of the oscillation source 11 may also be arranged on the same plane as described above, but the emitting portion is arranged on the measurement target side (that is, outside) of the front surface 10b of the housing. Alternatively, the emitting portion may be provided inside the housing 10.

The oscillation source 11 may be a light emitting diode, a laser diode, a halogen lamp, or the like that can output infrared rays, and a laser diode capable of linearly outputting infrared rays having strong energy is preferable. By selecting the laser diode as the oscillation source 11, it is possible to save space as compared with the case of using a halogen lamp or the like, and it is possible to reduce the weight and size of the battery 15 of the measuring device 1 by saving power.

The infrared rays emitted from the oscillation source 11 are preferably near infrared rays in terms of excellent resolution. More specifically, when the detector 12 detects infrared rays, the detection accuracy of near infrared rays is high among the infrared rays, and the resolution is excellent. Specific wavelength values are preferably greater than 780 nm and less than 30,000 nm (or more than 830 nm and less than 30,000 nm), more preferably more than 780 nm (or more than 830 nm) and less than 2,600 nm, particularly preferably. Is more than 830 nm and less than 1,200 nm. Further, the infrared rays emitted from the oscillation source 11 are preferably ultra-far infrared rays or terahertz waves because they are not easily affected by the usage environment. Specifically, the wavelength preferably exceeds 30 μm and 3, It is 000 μm or less, more preferably 40 to 300 μm.

When an infrared laser diode is used, it is preferably a laser diode with a temperature control function. Continuous oscillation of the laser diode makes it possible to suppress infrared output fluctuations caused by temperature fluctuations, which in turn makes it possible to measure various parameters with higher accuracy. Examples of the mechanism for realizing this temperature control function include a Peltier element.

In addition to the method of controlling the infrared output fluctuation as described above, there is a method of monitoring the infrared output. In one embodiment, a detector different from the detector for measuring the electromagnetic wave reflection intensity is provided, and a part of the infrared rays emitted from the laser diode is taken out by an optical filter such as an ND filter. The output fluctuation can be monitored by the other detector described above. For example, 90% of the emitted infrared rays are applied to the measurement target, and the remaining 10% can be used for monitoring output fluctuations. The configuration may be such that the influence on the intensity is analyzed based on the obtained record of the output fluctuation, or the output of the oscillation source may be varied according to the output fluctuation.

The intensity of the infrared reflected light from the measurement target is measured by a detector 12 inside the housing 10 and provided on the rear surface 10c of the housing. The film thickness of the measurement target can be measured based on the infrared reflection intensity measured by the detector 12. As the detector 12, a known detector can be used as long as it can detect infrared reflected light from the measurement target and can measure the infrared reflected intensity as a voltage value.

The condenser lens 16 may be provided on the front surface 10b of the housing. As a result, the infrared reflected light (broken line arrow in FIG. 2) can be efficiently directed to the detector 12, and the intensity can be measured with high sensitivity.

Further, the measuring device 1 of the present embodiment preferably has polarizing filters 17a and 17b (collectively, reference numeral 17). The reason is as follows.

The reflected light from the measurement target includes regular reflected light due to specular reflection and scattered light due to diffuse reflection in the measurement target. If the measuring device 1 is not directly facing the measurement target and has a deviation angle, the intensity of the specularly reflected light changes depending on the deviation angle. This means that the sensitivity difference depending on the angle with respect to the measurement target becomes large.

On the other hand, if the specularly reflected light can be cut by the polarizing filter 17, the detector 12 detects only the scattered light and measures the infrared reflection intensity. Therefore, the influence of the deviation angle of the measuring device 1 on the measurement result. Can be made smaller.

Further, the intensity of the specularly reflected light depends in part on the surface condition of the measurement target in addition to the film thickness of the measurement target. That is, by cutting the specularly reflected light by the polarizing filter 17, it is possible to accurately measure the reflected light intensity due to the film thickness.

However, the specularly reflected light is high-intensity light and may be suitable for film thickness measurement depending on the measurement target. Since the polarizing filter 17 reduces the intensity of the entire reflected light, the measuring device 1 is provided with a polarizing filter switching mechanism (not shown) that can switch the function of the polarizing filter 17 on / off according to the intention of the operator. Is also good. As the polarizing filter switching mechanism, the presence or absence of the polarizing filter 17 may be switched by operating the liquid crystal display 18 which is the touch panel of the housing 10 or a switch (not shown), or the position of the polarizing filter 17 may be changed. It may be physically changed.

Although the arrangement of the polarizing filter 17 is schematically shown in FIG. 2, there is no particular limitation on the mode in which the polarizing filter 17 is arranged. For example, the first polarizing portion is applied to the infrared emitting portion of the oscillation source 11. A filter 17a may be provided to make a wave in only one direction, and a second polarizing filter 17b in a direction orthogonal to the one direction may be provided in order to cut the specularly reflected light from the detector 12.

Further, the measuring device 1 of the present embodiment may be configured to include a spectroscope.
As a specific example, the film thickness of the measurement target may be measured based on the phase difference between the incident wave and the reflected wave of the electromagnetic wave emitted from the oscillation source 11.
The phase difference is determined by the value obtained by multiplying the distance that the electromagnetic wave reciprocates in the film by the refractive index of the film. That is, the phase difference depends on the film thickness. Therefore, if the relationship between the phase difference and the film thickness (for example, a calibration curve) is obtained in advance, the film thickness can be measured by measuring the phase difference between the incident wave and the reflected wave separated by the spectroscope with the detector 12. Can be measured.
As another specific example, the electromagnetic wave reflection intensity at a specific wavelength may be measured by the detector 12 as in a near-infrared spectroscopic camera or a near-infrared spectroscopic composition analyzer. The reflection intensity of the electromagnetic wave at a specific wavelength may be one-dimensionally analyzed or two-dimensionally analyzed (imaging).

One of the features of this embodiment is that four rangefinders 13 for measuring the distance from the measurement target are provided on the front surface 10b of the housing. The rangefinder 13 is arranged at the apex of a square or a rectangle on the same plane, and the oscillation source 11 is arranged at the center of gravity of the rangefinder 13. As the distance meter 13, a known one may be used as long as it can measure the distance from the measurement target. For example, it is based on the time when a pulse laser is irradiated and the reflected light is incident on the distance meter 13 again. You may measure the distance to. In this embodiment, a mechanism for detecting the reflected light of the pulse laser is provided inside the rangefinder 13, which is different from the detector 12 for measuring the infrared reflection intensity.

Further, in the present embodiment, it is preferable that the rangefinder 13 irradiates visible light (wavelength 400 to 780 nm (or 830 nm), and electromagnetic waves outside this range are referred to as invisible light). The reason is as follows.

When the measurement is carried out using the measuring device 1 of the present embodiment, the measurement target is irradiated with infrared rays from the oscillation source 11, but since the infrared rays are invisible light, the position of the measurement target is located only by the oscillation source 11. The operator cannot grasp whether infrared rays are being emitted.

On the other hand, when visible light (for example, a pulsed laser of visible light) is emitted from the distance meter 13, in the present embodiment, the distance meter 13 is arranged at the position of a square or rectangular apex on the same plane and oscillates. Since the source 11 is arranged at the center of gravity of the distance meter 13, the operator can visually recognize the four light spots on the measurement target by irradiating visible light from the four distance meters 13. It can be easily grasped that infrared rays are emitted on the intersection of two light spots diagonally connected.

At that time, when the button provided on the handle of the measuring device 1 is pressed shallowly, only the distance meter 13 is activated to irradiate visible light, and the button is deeply pressed after the visual positioning by the operator is completed. A configuration that irradiates infrared rays may be adopted. That is, a switching mechanism for switching the type of light rays between visible light and infrared light may be provided. Of course, the configuration may be other than this specific configuration. For example, when the button is pressed for the first time, visible light is emitted, and when the button is pressed for the second time, infrared light is emitted.

One of the features of the present embodiment is that it has a deviation angle measuring mechanism 14 for measuring the deviation angle between the measurement target and the measuring device 1 from the front. As an example of the deviation angle measuring mechanism 14, it is a mechanism that measures the deviation angle based on the distance measured by the distance meter 13. An example of the measurement is shown below together with a specific example of measuring the distance from the measurement target.

At the same time as irradiating infrared rays (infrared laser in the above example) from the oscillation source 11 of the measuring device 1 of the present embodiment, visible light pulse lasers are simultaneously radiated to the measurement target from the four range finders 13. The reflected light from the measurement target irradiated with the infrared laser is detected by the detector 12 through the condenser lens 16, and its intensity can be obtained as a voltage value.

Regarding the measurement of the distance from the measurement target, the four range finders 13 are installed so as to be at the positions of the vertices of a square or a rectangle on the front surface 10b of the measuring device 1. Further, the infrared laser diode which is the oscillation source 11 is arranged on the intersection (center of gravity) diagonally connected from the installation position of the four range finders 13. Therefore, the average value of the distances obtained from the four rangefinders 13 may be regarded as the distance from the infrared laser diode to the measurement target, and if the measurement target is flat, it is the distance itself to the measurement target. Note that this method can be realized even if the number of distance meters 13 surrounding the infrared laser diode is three.

Then, regarding the measurement of the deviation angle, when viewed toward the front surface 10b of the measuring device 1, the distance meter 13 has a horizontal deviation angle and its angle because it is arranged at the same horizontal distance from the oscillation source 11. You can get the equation of a plane. Similarly, since the rangefinder 13 is arranged at the same vertical distance from the oscillation source 11, the equation of a plane having a vertical deviation angle and the angle can also be obtained. In the present embodiment, the angle formed by the two planes of the measurement target and the front surface 10b is equal to the deviation angle.

With the above configuration, it is possible to measure the distance from the measurement target and the deviation angle from the front to the measurement target. The measuring device 1 of the present embodiment is a calculation mechanism 19 that calculates the film thickness of the measurement target from the infrared reflection intensity of the measurement target, the distance from the measurement target, and the deviation angle between the measurement target and the device. It is preferable to further provide.

For example, as shown in the calibration curve of FIG. 3 and the like of Patent Document 2 and FIG. 3 and the like of Examples described later, the film thickness of the measurement target has a correlation with the infrared reflection intensity of the measurement target.

Then, the infrared reflection intensity detected by the measuring device 1 is attenuated as the distance from the measurement target increases. At that time, there is a correlation between the infrared reflection intensity of the measurement target and the distance from the measurement target (see the calibration curve of FIG. 4 in Examples described later).

The same applies to the deviation angle, and the infrared reflection intensity decreases as the deviation angle increases. At that time, there is a correlation between the infrared reflection intensity of the measurement target and the deviation angle (see the calibration curve of FIG. 5 in Examples described later).

The relationship represented by the calibration curve shown in Examples described later is maintained if the composition to be measured and the content of each composition are equivalent. On the other hand, when measuring a measurement target having a different composition or content of each component, the same type of measurement target as the measurement target is used rather than using the above relationship as it is or making some correction to the above relationship. It is preferable to obtain in advance the relationship between the film thickness with respect to the substance, the infrared reflection intensity, the distance from the substance, and the deviation angle between the substance and the measuring device 1 from the front, that is, the calibration curve. The calibration curve does not have to be one, and may consist of a plurality of calibration curves as shown in FIGS. 3 to 5.

As a result, the film thickness excluding the influence of the distance from the measurement target and the deviation angle is measured from the infrared reflection intensity radiated from the measurement device 1 to the measurement target by the calibration curve obtained from each of the above correlations. The result can be displayed in real time on the liquid crystal display 18 or the like of the housing 10.

It is preferable that the measuring device 1 of the present embodiment is further provided with a type selection mechanism (not shown) capable of switching the calibration curve prepared for each type of measurement target according to the type of measurement target. The calibration curve may be stored in a memory (not shown) in the housing 10 and pulled out from the memory when the arithmetic mechanism 19 operates.

The calculation mechanism 19 may have the same configuration as the deviation angle measurement mechanism 14, and for example, one calculation mechanism 19 provided in the housing 10 may be used to calculate the film thickness and measure the deviation angle. Further, the arithmetic mechanism 19 may be an external terminal such as a personal computer or a tablet connected to the measuring device 1.

In addition to the effects of the present invention, the above-mentioned configuration also produces the following effects.

As described above, the infrared reflection intensity that can be detected by the measuring device 1 of the present embodiment is attenuated as the distance from the measurement target increases, and the measurement accuracy thereof also decreases. Of course, the measurable distance depends on the power of the oscillation source 11, but the oscillation source 11 used in the measuring device 1 of the present embodiment has sufficient accuracy even if the distance to the measurement target is 5 m. It has been confirmed that the film thickness can be measured. By the way, when the function of the polarizing filter 17 is turned off by the polarizing filter switching mechanism mentioned above, the specular reflected light can be detected, so that the intensity of the infrared reflected light can be largely secured and the distance is 10. Even if it is ~ 15 m, the film thickness of the coating film can be measured with sufficient accuracy.

Further, since the infrared reflection intensity is attenuated as the deviation angle from the face-to-face with respect to the measurement target increases, the closer the measurement target and the front surface 10b of the device are to the face-to-face, the better the measurement accuracy. On the other hand, the measuring device 1 of the present embodiment can measure the film thickness with high accuracy even if the deviation angle is large. For example, in the measuring device 1 of the present embodiment, even if the deviation angle from the face-to-face with respect to the measurement target is 85 ° or less, the measurement can be performed with very good accuracy, and the measurement can be performed at 75 ° or less. If there is, the accuracy will be even better.

Of course, the present invention is not limited to the present embodiment. The application examples or modification examples are listed below. The preferred examples given in this embodiment may be appropriately combined with the following examples.

For example, the measurement target is not particularly limited, but titanium white, cuprous oxide, zinc oxide, petal handle, yellow petal handle, chromium green black hematite, manganese bismuth black, chromium iron oxide, nickel antimony titanium yellow rutile, and chromium antimony. A coating film containing one or more infrared reflective materials selected from titanium baflutyl, rutile tin zinc and the like is preferable, and the coating film has properties of having both reflectivity and transparency to infrared rays. Is preferable.

When a large amount of infrared reflective material is contained in such a coating film, the transmittance of infrared rays is lowered, so that the range of film thickness that can be measured by this apparatus tends to be narrowed. Therefore, the coating film to be measured preferably has a film thickness of 2,000 μm or less, more preferably 1,000 μm or less.

Further, as another measurement target, it is also possible to measure the thickness of a base material that reflects infrared rays, for example, a rust preventive oil or a resin film applied to a steel plate or the like.

As the thickness of the rust preventive oil or resin film increases, the absorption of infrared rays increases, so that the infrared reflection intensity reflected from the base material is attenuated. Therefore, by utilizing the correlation, it is possible to measure the thickness of the rust preventive oil or the resin film that absorbs infrared rays on-site by a non-contact method.

In addition, the measuring device 1 of the present embodiment can measure the concentration of the infrared reflective material contained in the measurement target. This "concentration" indicates how much the infrared reflective material is contained, and is also the (weight, volume) content. The concentration is measured by correcting the infrared reflection intensity according to the distance from the measurement target and the deviation angle from the face-to-face, similar to the thickness measurement of the measurement target described above.

To give a specific example, as in the case of the thickness measurement described above, the concentration for the same paint as the measurement target, the infrared reflection intensity, the distance from the measurement target, and the face-to-face between the measurement target and the measurement device 1 By obtaining the relationship with the deviation angle, that is, the calibration curve in advance, the concentration excluding the influence of the distance from the measurement target and the deviation angle can be calculated by the calculation mechanism 19.

Further, the measuring device 1 is used to measure the infrared reflection intensity of a coating film having a specific film thickness (for example, a film thickness of tμm) formed of a paint having a known “concentration”. Then, from the measurement result, the concentration is measured by excluding the influence of the distance from the measurement target and the deviation angle.

By measuring the concentration of the infrared reflective material in this way, for example, when the coating film to be measured is formed of a two-component paint, it is possible to easily inspect whether the mixing ratio is correct or not in a non-destructive manner. Can be done. Incidentally, the technical idea of the present invention can be applied to other than the above-mentioned thickness measurement and concentration measurement, and any parameter among various parameters referred to in the present specification, the electromagnetic wave reflection intensity from the measurement target, and the measurement target The arbitrary parameter may be calculated by the calculation mechanism 14 from the relationship between the distance of the above and the deviation angle between the measurement target and the device.

The usage mode of the measuring device 1 of the present embodiment is not particularly limited, but it contains almost all near infrared rays because it may be affected by the weather and the orientation of the measurement target under sunlight including near infrared rays. It is preferably used indoors under non-illuminated lighting (eg, fluorescent light, etc.). Further, the measuring device 1 of the present embodiment can be used even in a completely dark place, and can measure even in an environment with almost no lighting such as outdoors at night or inside a block of a ship or a structure. .. Further, if the infrared intensity of the external light is not very high, the thickness can be obtained by excluding the influence of the external light from the infrared reflection intensity obtained by the measurement.
On the other hand, when the wavelength of the oscillation source is a wavelength generally called ultra-far infrared rays, terahertz waves, or sub-terahertz waves (for example, more than 30 μm and less than 3,000 μm), there is an advantage that it is not easily affected by sunlight.

Hereinafter, modifications of this measuring device are listed.

In the present embodiment, there is an example in which a calculation mechanism 19 is provided that calculates the thickness of the measurement target from the infrared reflection intensity of the measurement target, the distance from the measurement target, and the deviation angle between the measurement target and the device. Was mentioned. On the other hand, if the operator can grasp the distance and the deviation angle by displaying the distance and the deviation angle on the liquid crystal display 18 or the like, the portable measuring device 1 of the present embodiment is appropriately arranged with respect to the measurement target. It becomes possible. As a result, even when the arithmetic mechanism 19 is not used, various parameters that are the basis of the infrared reflection intensity from the measurement target can be measured accurately in a short time by the non-contact method. However, providing the arithmetic mechanism 19 reduces the burden on the operator and improves the accuracy of the measurement result.

In the measuring device 1 of the present embodiment, the deviation angle measuring mechanism 14 gives an example of measuring the deviation angle based on the distance measured by the distance meter 13, but in addition to this, the measuring device 1 has a gravity sensor ( When the (not shown) is mounted, the deviation angle from the measuring device 1 can be measured by arranging the measurement target perpendicular to the front surface 10b.

The measuring device 1 of the present embodiment has four distance meters 13, all of which are arranged at the positions of square or rectangular vertices on the same plane, and the oscillation source 11 is the distance meter 13. The case where it is arranged at the center of gravity is illustrated. In the present embodiment, it is preferable to have a plurality of rangefinders 13, and it is more preferable to have three or more rangefinders 13. On the other hand, the distance meter 13 may be, for example, one annular distance meter arranged around the oscillation source 11 on the front surface 10b of the housing, and may be a distance (average value) from a measurement target or a measuring device. It is possible to obtain the deviation angles in the vertical direction and the horizontal direction with respect to 1. Further, two long distance meters may be arranged in the horizontal (vertical) direction with the oscillation source 11 interposed therebetween.

In the measuring device 1 of the present embodiment, the distance meters 13 are all arranged on the same plane with the same distance from the oscillation source 11, and the oscillation source 11 is arranged at the center of gravity at the position of the distance meter 13. The case has been illustrated, but the present invention is not limited to this aspect. For example, even if the distance of each rangefinder 13 from the oscillation source 11 is different, the distance from the measurement target and the deviation angle from the face-to-face are determined based on the positional relationship between each rangefinder and the oscillation source 11. It can be calculated by the calculation mechanism 19.

The measuring device 1 of the present embodiment has given an example in which a calibration curve is obtained in advance in order to obtain a thickness as an absolute value, but when obtaining a thickness as a relative value, the calibration curve is unnecessary. For example, when the measurement target has a large area, the thickness of the measurement target is increased by randomly irradiating several measurement targets with infrared rays and examining the presence or absence of a difference in infrared reflection intensity between the measurement targets. It is possible to check whether there is any variation. In the present specification, "calculating at least one of the thickness and the concentration of the measurement target by the calculation mechanism 19" means, for example, as an absolute value, for example, as a relative value, for example, as a thickness. It also means an operation to obtain the value (more specifically, the infrared reflection intensity that is the basis of the thickness).

In addition to the case of obtaining the thickness as an absolute value described in the present embodiment, in the case of obtaining the thickness as a relative value as described above, when several points to be measured are randomly irradiated with infrared rays, The measurement result at each measurement point may be saved in the memory, and the average value, standard deviation, or the like of the measurement result may be calculated by the above calculation mechanism 19 or another calculation mechanism.

Although the measuring device 1 of the present embodiment has been described in detail, the technical idea of the present invention is reflected in measuring at least one of the thickness and the concentration of the measurement target using the measuring device 1.

Further, the technical idea of the present invention is also reflected in the measurement system and the measurement program related to the thickness correction in the measurement device 1 of the present embodiment.

As one configuration as a measurement system, it is sufficient to read the above-mentioned measuring device 1 as a measuring system. This measurement system is controlled by, for example, a control unit (not shown) in the housing 10.

Further, the deviation angle measuring mechanism 14 and the calculation mechanism 19 may be connected to each other at a remote location via a server. On the contrary, the calculation mechanism 19 (or the deviation angle measurement mechanism 14 in addition to the calculation mechanism 19) may be present at hand, and other configurations may be connected at a remote location via the server. Further, when the calibration curve to be measured is not stored in the memory in the housing 10, the control unit (not shown) in the housing 10 is configured to download the calibration curve to the memory via the server. You may adopt it.

One configuration as the measurement program may be a measurement program that causes the measuring device 1 to function as each of the above configurations. The measurement program is executed by making the measuring device 1 as a computer function by the control unit in the housing 10.

In the present specification, the portable measuring device 1 has been illustrated as an embodiment, but there is no hindrance to applying the technical idea of the present invention after making the measuring device 1 a stationary type.

Further, a part of the configuration of the measuring device 1 may be a stationary type. For example, while arranging an oscillation source outside the housing 10, one end of a light guide member (eg, an optical fiber) is connected to the oscillation source, and another end of the optical fiber is housed in the housing 10. It may be arranged at the position of the oscillation source 11 of 1 and FIG. Even when the drive source of the oscillation source 11 is arranged outside the housing 10, the oscillation source 11 itself that emits electromagnetic waves (eg, infrared rays) is arranged as shown in FIGS. 1 and 2. In some cases, the technical idea of the present invention can be applied. In the present specification, an oscillator that emits an electromagnetic wave from an oscillation source or a light guide member is referred to as an “oscillation unit”. That is, at least a part of the oscillation unit may be arranged at the position of the oscillation source 11 in FIGS. 1 and 2.

Furthermore, the oscillating unit may be arranged as a device separate from the measuring device 1. Further, the oscillation unit may not be provided in the first place, and for example, the electromagnetic wave reflection intensity from the measurement target irradiated with sunlight may be measured by the detector 12.

The power supply of the measuring device 1 may be arranged outside the housing 10. When the power supply is arranged outside, the power is supplied from the outside.

Next, the present invention will be described in more detail based on examples. In the following examples, an example in which the measuring device 1 (FIG. 1) of the present embodiment is used for measuring the film thickness of the coating film is shown, but the present invention is not limited to the following examples.

In this example, as described in Example 5 of JP-A-2016-17164, an undercoat film made of the undercoat paint SP-GY is formed, and a topcoat film made of the topcoat paint IR-U is formed. Together, the coating film to be measured was used. Then, as a target for determining the thickness, a coating film of the topcoat coating film IR-U (hereinafter referred to as coating film X) was selected.

The following procedure was performed in order to obtain a calibration curve for the coating film X in advance.

First, five test pieces having a dry film thickness of 108 μm, 243 μm, 469 μm, 701 μm, and 935 μm were prepared by the following procedure.
<Procedure for making test pieces>
On a steel sheet (width 70 mm x length 150 mm x thickness 1.6 mm, ISO8501-1: 2007-compliant treatment grade SA2.5 sandblasted steel sheet, the same applies hereinafter), the undercoat paint SP-GY is applied to a thickness of about 10 μm. Was spray-painted and dried at room temperature for 1 week. The film thickness of the undercoat film was measured with an electromagnetic film thickness meter (LZ-990, manufactured by Kett).
The topcoat coating film IR-U was spray-coated on the obtained undercoat coating film of the steel sheet with an undercoat coating film so as to have five different film thicknesses. The obtained wet coating film was dried at 60 ° C. for 24 hours to prepare a test piece with a coating film to be measured, which was composed of an undercoat coating film and a coating film X. The film thickness of the coating film to be measured was measured with the electromagnetic film thickness meter, and the value obtained by subtracting the film thickness of the undercoat coating film from the obtained value was defined as the film thickness of the coating film X.

Using the above test piece, the deviation angle θ = 0 ° of the front surface 10b of the measuring device 1 with respect to the measurement target coating film, and the distance between the measurement target coating film and the front surface 10b of the measuring device 1 is 1 m (four). An infrared laser diode (model: QFLD-850-100S-PM) provided in the measuring device 1 when the distance between each rangefinder 13 and the measurement target is the average value L = 1 m of La, Lb, Lc, and Ld). , Wavelength: 855 nm, manufactured by QPhotonics, LLC), the intensity of infrared reflection emitted was measured. The detector 12 provided in the measuring device 1 was a Si PIN photodiode (model: S3204-08, dimensions: 18 mm × 18 mm, manufactured by Hamamatsu Photonics Co., Ltd.). FIG. 3 shows the measurement result, that is, a graph showing the relationship between the infrared reflection intensity and the thickness (film thickness) for the same type of substance (coating film X) as the measurement target.

As shown in FIG. 3, when the distance and the angle were fixed, the infrared reflection intensity detected by the measuring device 1 in the coating film X increased as the film thickness increased.

Next, using the above test piece, the deviation angle of the front surface 10b with respect to the measurement target coating film is set to θ = 0 °, and the distance between the measurement target coating film and the front surface 10b of the measuring device 1 is set to 50 cm or more. The infrared reflection intensity emitted from the infrared laser diode when changed in the range of 5 m was measured. FIG. 4 shows the measurement result, that is, a graph showing the relationship between the infrared reflection intensity for the same type of substance as the measurement target and the distance from the substance.

As shown in FIG. 4, when the angle is fixed and the distance is changed, the infrared reflection intensity detected by the measuring device 1 decreases as the distance increases.

Next, using the above test piece, the distance between the coating film to be measured and the front surface 10b of the measuring device 1 is set to 1 m, and the deviation angle of the front surface 10b from the front with respect to the coating film to be measured is θ = -65 to 5. The infrared reflection intensity emitted from the infrared laser diode when changed in the range of + 65 ° was measured. FIG. 5 shows a graph showing the measurement result, that is, the relationship between the infrared reflection intensity for a substance of the same type as the measurement target and the deviation angle of the measuring device 1 from the face-to-face with respect to the substance.

As shown in FIG. 5, when the distance was fixed and the deviation angle was changed, the infrared reflection intensity detected by the device decreased as the deviation angle from the face-to-face increased.

According to the above procedure, the relationship between the film thickness, the infrared reflection intensity, the distance from the substance, and the deviation angle of the measuring device 1 from the face-to-face with respect to the substance of the same type as the measurement target (calibration curve). Got

Then, the film thickness was measured using the measuring device 1 of the present embodiment for the coating film to be measured including the coating film X whose film thickness is unknown. The results were as follows.
Infrared reflection intensity emitted from an infrared laser diode = 0.850V
Value of distance meter 13a La = 980mm
Distance meter 13b value Lb = 1,040 mm
Distance meter 13c value Lc = 1,020mm
Distance meter 13d value Ld = 960mm
Mean value (distance) of La, Lb, Lc, Ld = 1,000 mm (1 m)
Deviation angle = 41.1 degrees And as a result of applying the above numerical values to the above relationship (calibration curve) by the arithmetic mechanism 19 described in this embodiment, the film thickness obtained was 322 μm.

In order to confirm the accuracy of the above measurement results, the film thickness of the coating film X of the coating film to be measured was measured according to the procedure for preparing the test piece described above. As a result, the film thickness was 320 μm. Although the error range of the electromagnetic film thickness meter is 2%, it was found that the measuring device 1 of the present embodiment can measure the thickness with an accuracy comparable to that of the contact type.

The present inventor also conducted a test in the case where the following various oscillation sources were used instead of the above-mentioned infrared laser diode.
"H8385030D" (manufactured by Egismos Technology, small laser diode, wavelength 850 nm)
-"KEDE1452H" (manufactured by Kyoto Semiconductor Co., Ltd., light emitting diode, wavelength 1200 to 1600 nm, 2.8 mW)
"FLD-980-100S" (QPhotonics, LLC, fiber laser diode with temperature control function, wavelength 975 nm)
-A Panasonic Corporation reflight (for photography, 500W type diffused light type) was installed on the side of the housing of the measuring device 1 (that is, an oscillation source separate from the measuring device 1 was installed on the side of the housing). Then, the reflection intensity of the electromagnetic wave having a wavelength of 900 to 1700 nm reflected from the coating film was measured using an infrared camera "SC2500-NIR" (manufactured by FLIR Systems).
As a result, it was found that when these various oscillation sources were used, the thickness could be measured with an accuracy comparable to that of the contact type, as in the above embodiment.

Furthermore, the present inventor conducted a test to show that a terahertz wave having a wavelength of 3,000 μm can be applied to the technical idea of the present invention. The following equipment was used for this test.
-As the oscillation source 11, a terahertz light source manufactured by Terrasense (wavelength 3,000 μm (100 GHz), output 200 mW).
-The detector 12 is a terahertz imaging camera (Tera-1024, 100 GHz) manufactured by Terasense.
In this test, the oscillation source 11 and the detector 12 are separate devices.

A plastic board (thickness 3 mm) was installed at a distance of 20 cm so as to face the oscillation source 11 and the detector 12 arranged adjacent to each other. Then, the electromagnetic wave reflection intensity (voltage value) from the plastic board captured by the detector 12 was measured. As a result, the electromagnetic wave reflection intensity was 6.2 × 10 ^-2 V.

The distance between the oscillation source and the detector and the plastic board was changed to 19 cm, and the measurement was performed. As a result, the electromagnetic wave reflection intensity was 7.1 × ^10-2 V (a distance of 20 cm, a relative value of 1.18 with respect to the electromagnetic wave reflection intensity (voltage value) in the facing state).

The distance of 20 cm was not changed, but the deviation angle from the front to the plastic board was changed to 30 °, and the measurement was performed. As a result, the electromagnetic wave reflection intensity was 4.1 × ^10-2 V (distance 20 cm, relative value 0.66 with respect to the electromagnetic wave reflection intensity (voltage value) in the facing state).

By this test, it was confirmed that the electromagnetic wave reflection intensity is affected by the distance and the angle even in the electromagnetic wave (terahertz wave) in the long wavelength region.

Next, "CMP Nova 2000 Light Gray" (manufactured by Chugoku Paint Co., Ltd.) was spray-coated on the steel sheet described in <Procedure for preparing test pieces> so as to have two types of film thicknesses. The obtained wet coating film was dried at 60 ° C. for 24 hours to prepare two test pieces 2 with a coating film to be measured having a dry film thickness of 262 μm and 431 μm.

The test piece 2 with the coating film to be measured is installed at a position where the distance between the oscillation source and the detector is 20 cm and is facing each other, and the electromagnetic wave reflection intensity from the test piece captured by the detector ( Voltage value) was measured.

The dry film thickness of the test piece was measured with an electromagnetic film thickness meter case 262Myuemu, electromagnetic wave reflection intensity was 1.0 × 10 -2 ^V.

Further, when the dry film thickness for the test was 431 μm, the electromagnetic wave reflection intensity was 4.2 × 10 ^-2 V (relative value 4.2 with respect to the case where the dry film thickness was 262 μm).

By this test, it was confirmed that the film thickness of the coating film to be measured affects the electromagnetic wave reflection intensity even in the electromagnetic wave (terahertz wave) in the long wavelength region.

From the above two test results, it was found that the relationship between the electromagnetic wave reflection intensity from the measurement target, the distance from the measurement target, the deviation angle between the measurement target and the device from the front, and the film thickness can be obtained. Similarly, it is possible to obtain a relationship with the concentration.

In addition to obtaining the above relationship, the distance from the measurement target can be measured by the range finder 13 in the measuring device 1, and the deviation angle from the front to the measurement target can be measured by the deviation angle measuring mechanism 14. The electromagnetic wave reflection intensity can be obtained by incorporating the terahertz imaging camera into the measuring device 1 and then using it as the detector 12.

As a result of the above, it was found that even if the electromagnetic wave is a terahertz wave having a wavelength of 3,000 μm, the film thickness and the like can be measured by the measuring device 1 according to the present embodiment.

From the above results, it was found that the measuring device 1 of the present embodiment can accurately measure the film thickness by the non-contact method. Even if various parameters other than the film thickness (for example, thickness and concentration) are used, the effect of the present invention can be obtained by following the same procedure.

1 ... Measuring device 10 ... Housing 10a ... Top surface of housing 10b ... Front surface of housing 10c ... Rear surface of housing 11 ... Oscillation source 12 ... Detector 13 (13a, 13b, 13c, 13d) ... Distance meter 14 ... Angle measurement mechanism 15 ... Battery 16 ... Condensing lens 17 (17a, 17b) ... Polarizing filter 18 ... Liquid crystal display 19 ... Calculation mechanism 20 ... Handle 21 ... Infrared oscillation button

Claims (14)

A non-contact measuring device for the object to be measured,
A detector that measures the intensity of electromagnetic wave reflection from a measurement target irradiated with electromagnetic waves,
A rangefinder that measures the distance from the measurement target,
A deviation angle measuring mechanism that measures the deviation angle between the measurement target and the measuring device from the front,
Portable measuring device including. The portable measuring device according to claim 1, further comprising an oscillating unit that irradiates a measurement target with an electromagnetic wave. The portable measuring device according to claim 2, wherein the oscillating unit is a laser diode with a temperature control function. The portable measuring device according to claim 2 or 3, wherein a part of the electromagnetic wave emitted from the oscillating unit is taken out, and the output fluctuation of the oscillating unit is monitored by a detector different from the detector. The portable measuring device according to any one of claims 1 to 4, wherein the deviation angle measuring mechanism calculates a deviation angle based on the distance measured by the range finder. The portable measuring device according to any one of claims 1 to 5 , further comprising a polarizing filter. The portable measuring device according to any one of claims 1 to 6 , wherein the electromagnetic wave is invisible light, and visible light is emitted from the range finder. The portable measuring device according to any one of claims 1 to 7 , which has a plurality of the rangefinders. It also includes an oscillator that irradiates the measurement target with electromagnetic waves.
The portable type according to claim 8 , wherein all the rangefinders are arranged on the same plane at equal distances from the oscillator, and the oscillators are arranged at the center of gravity of the position of the rangefinder. measuring device. The portable measuring device according to any one of claims 1 to 9 , wherein the wavelength range of the electromagnetic wave exceeds 780 nm and is 3,000 μm or less. Further, claims 1 to 1, which include a calculation mechanism for calculating the thickness of the measurement target from the electromagnetic wave reflection intensity from the measurement target, the distance from the measurement target, and the deviation angle between the measurement target and the device. 10. The portable measuring device according to any one of 10. Further, claims 1 to 10 , further comprising a calculation mechanism for calculating the concentration of the measurement target from the electromagnetic wave reflection intensity from the measurement target, the distance from the measurement target, and the deviation angle between the measurement target and the device. The portable measuring device according to any one. A measuring method for measuring the thickness of a measurement target using the portable measuring device according to claim 11. A measuring method for measuring the concentration of a measurement target using the portable measuring device according to claim 12.

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