JP5476046B2 - 剥離方法、基板の接着剤、および基板を含む積層体 - Google Patents
剥離方法、基板の接着剤、および基板を含む積層体 Download PDFInfo
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- JP5476046B2 JP5476046B2 JP2009140223A JP2009140223A JP5476046B2 JP 5476046 B2 JP5476046 B2 JP 5476046B2 JP 2009140223 A JP2009140223 A JP 2009140223A JP 2009140223 A JP2009140223 A JP 2009140223A JP 5476046 B2 JP5476046 B2 JP 5476046B2
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- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
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- C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
- C09J129/00—Adhesives based on homopolymers or copolymers of compounds having one or more unsaturated aliphatic radicals, each having only one carbon-to-carbon double bond, and at least one being terminated by an alcohol, ether, aldehydo, ketonic, acetal, or ketal radical; Adhesives based on hydrolysed polymers of esters of unsaturated alcohols with saturated carboxylic acids; Adhesives based on derivatives of such polymers
- C09J129/02—Homopolymers or copolymers of unsaturated alcohols
- C09J129/04—Polyvinyl alcohol; Partially hydrolysed homopolymers or copolymers of esters of unsaturated alcohols with saturated carboxylic acids
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- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
- C09J145/00—Adhesives based on homopolymers or copolymers of compounds having no unsaturated aliphatic radicals in a side chain, and having one or more carbon-to-carbon double bonds in a carbocyclic or in a heterocyclic system; Adhesives based on derivatives of such polymers
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- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
- C09J5/00—Adhesive processes in general; Adhesive processes not provided for elsewhere, e.g. relating to primers
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- H—ELECTRICITY
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
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- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
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- H01L21/6835—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
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- B32B37/12—Methods or apparatus for laminating, e.g. by curing or by ultrasonic bonding characterised by using adhesives
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- C09J2301/00—Additional features of adhesives in the form of films or foils
- C09J2301/50—Additional features of adhesives in the form of films or foils characterized by process specific features
- C09J2301/502—Additional features of adhesives in the form of films or foils characterized by process specific features process for debonding adherents
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- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
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- H01L2221/67—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere
- H01L2221/683—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L2221/68304—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
- H01L2221/68318—Auxiliary support including means facilitating the separation of a device or wafer from the auxiliary support
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2221/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof covered by H01L21/00
- H01L2221/67—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere
- H01L2221/683—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L2221/68304—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
- H01L2221/68327—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support used during dicing or grinding
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
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- H01L2221/67—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere
- H01L2221/683—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L2221/68304—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
- H01L2221/6834—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support used to protect an active side of a device or wafer
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2221/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof covered by H01L21/00
- H01L2221/67—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere
- H01L2221/683—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L2221/68304—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
- H01L2221/68381—Details of chemical or physical process used for separating the auxiliary support from a device or wafer
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T156/00—Adhesive bonding and miscellaneous chemical manufacture
- Y10T156/11—Methods of delaminating, per se; i.e., separating at bonding face
- Y10T156/1111—Using solvent during delaminating [e.g., water dissolving adhesive at bonding face during delamination, etc.]
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T428/00—Stock material or miscellaneous articles
- Y10T428/31504—Composite [nonstructural laminate]
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T428/00—Stock material or miscellaneous articles
- Y10T428/31504—Composite [nonstructural laminate]
- Y10T428/31971—Of carbohydrate
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- Computer Hardware Design (AREA)
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- Mechanical Treatment Of Semiconductor (AREA)
- Adhesives Or Adhesive Processes (AREA)
Description
第1接着剤層4は、ウエハ2と第2接着剤層5とに接着している。第1接着剤層4は、ウエハ2とサポートプレート3とを、第2接着剤層5を介して十分接着させることが可能な接着化合物を含む第1接着剤材料により形成されていればよく、従来公知の接着剤材料を好適に使用可能である。第1接着剤層4を形成する第1接着剤材料としては、アクリル−スチレン系樹脂、マレイミド系樹脂を含むものが挙げられる。
第2接着剤層5は、サポートプレート3側に位置し、第1接着剤層4とサポートプレート3とを接着している。第2接着剤層5は、第1接着剤層4よりも速く溶剤に溶解する、または第1接着剤層4が溶解する溶剤とは異なる溶剤に溶解するように形成されている。本発明に係る接着剤は、第2接着剤層5を形成するためのものであり、後述する第2接着剤材料を含むものである。
前記樹脂(A)を構成する単量体成分は、前記シクロオレフィン系モノマー(a1)と共重合可能な他のモノマーを含有していてもよく、例えば、下記一般式(2)で示されるようなアルケンモノマー(a2)をも含有することが好ましい。アルケンモノマー(a2)としては、例えば、エチレン、プロピレン、1−ブテン、イソブテン、1−ヘキセン、α−オレフィンなどが挙げられる。前記アルケンモノマー(a2)は、直鎖状であってもよいし、分岐状であってもよい。
前記樹脂(A)を構成する単量体成分は、その50質量%以上が前記シクロオレフィン系モノマー(a1)であることが好ましく、より好ましくは60質量%以上が前記シクロオレフィン系モノマー(a1)であるのがよい。シクロオレフィン系モノマー(a1)が単量体成分全体の50質量%以上であると、高温環境下における接着強度が良好なものとなる。
本発明において、第1接着剤材料または第2接着剤材料として使用する接着剤組成物は、熱重合禁止剤を含有してもよい。熱重合禁止剤は、熱によるラジカル重合反応を防止するのに有効な物質である。熱重合禁止剤は、ラジカルに対して高い反応性を示し、モノマーよりも優先的に反応するため、重合が禁止される。そのため、熱重合禁止剤を含む接着剤組成物は、高温環境下(特に250℃〜350℃)における接着剤組成物の重合反応が抑制される。これにより、250℃で1時間加熱する高温プロセスを経ても、接着剤組成物を容易に溶解できる。したがって、接着剤組成物により形成された接着剤層を、高温プロセス後においても容易に剥離することができ、また残渣の発生も抑えることができる。
下記表1に示す配合量で、公知のラジカル重合により樹脂1〜2を合成した。
上記樹脂1(100質量部)をPGMEAに溶解し、樹脂1の濃度が40質量%の接着剤組成物1を調整した。また、上記樹脂2(100質量部)をPGMEAに溶解し、樹脂2の濃度が40質量%の接着剤組成物2を調整した。
接着剤組成物1を5インチシリコンウエハ2上に塗布し、80℃で5分間乾燥させて、層厚15μmの第1接着剤層4を形成した。次に、接着剤組成物2を第1接着剤層4上に塗布し、80℃で5分間乾燥させて、層厚3μmの第2接着剤層5を形成した。そして、第2接着剤層5上に孔あきサポートプレート3を接着させた。
実施例1と同様に、接着剤組成物1を5インチシリコンウエハ2上に塗布し、80℃で5分間乾燥させて、層厚15μmの第1接着剤層4を形成した。次に、コラーゲンペプチドの水溶液(30質量%)を第1接着剤層4上に塗布し、80℃で5分間乾燥させて、層厚3μmの第2接着剤層5を形成した。そして、第2接着剤層5上に孔あきサポートプレート3を接着させた。
接着剤組成物1を6インチシリコンウエハ2に塗布し、110℃で3分間、150℃で6分間乾燥させて層厚30μmの第1層接着剤層4を形成した。次に水添テルペン樹脂(ヤスハラケミカル社製)を含むp−メンタン溶液(30質量%)を第1接着層4上に塗布し、120℃で3分間乾燥させて、層厚7μmの第2接着剤層5を形成した。そして第2接着剤層5上に孔あきサポートプレートを接着させた。
第1接着剤層4の全面にHPを注入した。HPに対する第1接着剤層4の溶解速度は100nm/sであり、第1接着剤層4の溶解に要した時間は約60秒であった。サポートプレートの剥離時間は1分間であった。
接着剤組成物1を6インチシリコンウエハ2に塗布し、110℃で3分間、150℃で6分間乾燥させて層厚30μmの第1層接着剤層4を形成した。次に、表2〜4に記載のポリマー単独、オリゴマー単独、またはそれらを所定の比率で混合したものを含むp−メンタン溶液(30質量%)をそれぞれ用意し、接着剤組成物2として第1接着層4上に塗布し、120℃で3分間乾燥させて、層厚7μmの第2接着剤層5を形成した。そして第2接着剤層5上に孔あきサポートプレートを接着させた。
各積層体1をp−メンタンに浸漬した(23℃において5分間)。p−メンタンへの浸漬後、第2接着剤層5が完全に溶解していたものを「○」、溶け残っていたものを「×」とした。また、第2接着剤層5が完全に溶解した際の、層厚と溶解時間との関係から溶解速度(nm/sec)を算出した。また、溶解速度が60nm/secであるものが生産性の観点から好ましい。
各積層体1を230℃で1時間加熱した後、p−メンタンに浸漬した。p−メンタンへの浸漬後、第2接着剤層5の溶解の有無を目視により観察し、溶解が起こっていたものを「○」、溶解が起こっていなかったものを「×」とした。
各積層体1をPGMEAに浸漬した(23℃において5分間)。PGMEAへの浸漬後、第2接着剤層5のクラックの有無を目視により観察し、クラックがないものを「○」、クラックが有るものを「×」とした。
各積層体1に形成した膜厚50μmの第2接着剤層5のクラックの有無を目視により観察し、クラックがないものを「○」、クラックが有るものを「×」とした。
各積層体1を水、イソプロピルアルコール、PGME、NMP、DMSO、2.38質量%のTMAH水溶液、5質量%水酸化ナトリウム水溶液、1質量%フッ酸、および3質量%フッ酸にそれぞれ浸漬した(23℃において5分間)。これらの溶剤への浸漬後、第2接着剤層5のクラックおよび溶解の有無を目視により観察し、クラックおよび溶解が起こっていなかったものを「○」、クラックおよび溶解が起こっていたものを「×」とした。
各積層体1を40℃から250℃まで昇温して、第2接着剤層5からのガスの発生量(脱ガス量)を測定し、そのガス量により各接着剤組成物2の耐熱性を評価した。
実施例4の接着剤組成物2に熱重合禁止剤(IRGANOX1010(チバスペシャリティケミカルズ社製))を、接着剤組成物2の樹脂全体に対して1%または5%添加したものを、それぞれ実施例25および26とした。実施例3で形成した第1層接着剤層4上に、実施例4、実施例25および26の接着剤組成物2を用いて、第2接着剤層5を形成した。そして、第2接着剤層5上に孔あきサポートプレートを接着させて積層体1を形成した。
実施例1と同様に、接着剤組成物1を5インチシリコンウエハ2上に塗布し、80℃で5分間乾燥させて、層厚15μmの接着剤層を形成した。次に、当該接着剤層上に孔あきサポートプレート3を接着させた。すなわち、接着剤層を1層構造とした。このようにして作製した積層体に、サポートプレート3の接着剤層に接していない側から、HPを注入した。溶剤に対する接着剤層の溶解速度は100nm/secであるが、サポートプレート3の孔を介して溶剤が注入されるため、溶剤の浸透速度が低下し、接着剤層の溶解に約5分間要した。すなわち、サポートプレート3の剥離時間は約5分間であった。
2 ウエハ(基板)
3 サポートプレート(支持板)
4 第1接着剤層
5 第2接着剤層
6 接着積層体
Claims (14)
- 第1接着剤層と、第1接着剤層よりも速く溶剤に溶解する第2接着剤層、若しくは、第1接着剤層が溶解する溶剤とは異なる溶剤に溶解する第2接着剤層とを介して支持板が貼着されている基板から、当該支持板を剥離する剥離方法であって、
上記支持板側に位置する第2接着剤層を溶解して上記支持板を上記基板から剥離する剥離工程を包含することを特徴とする剥離方法。 - 上記剥離工程の後に、第1接着剤層を溶解する溶解工程をさらに包含することを特徴とする請求項1に記載の剥離方法。
- 上記支持板には、厚さ方向に貫通した複数の貫通孔が設けられていることを特徴とする請求項1または2に記載の剥離方法。
- 第2接着剤層を形成する接着化合物の平均分子量は、第1接着剤層を形成する接着化合物の平均分子量の10%〜30%であることを特徴とする請求項1〜3のいずれか1項に記載の剥離方法。
- 第2接着剤層を形成する接着化合物は、炭化水素樹脂または極性溶媒溶解性化合物を含むことを特徴とする請求項1〜3のいずれか1項に記載の剥離方法。
- 上記炭化水素樹脂は、シクロオレフィンコポリマーまたはシクロオレフィンポリマーであることを特徴とする請求項5に記載の剥離方法。
- 上記極性溶媒溶解性化合物は、コラーゲンペプチド、セルロース、およびポリビニルアルコール(PVA)からなる群より選択されることを特徴とする請求項5に記載の剥離方法。
- 第2接着剤層の層厚は、第1接着剤層の層厚よりも薄いことを特徴とする請求項1〜7のいずれか1項に記載の剥離方法。
- 基板と、上記基板上に形成された第1接着剤層と、上記第1接着剤層上に形成された、第1接着剤層よりも速く溶剤に溶解する第2接着剤層、若しくは、第1接着剤層が溶解する溶剤とは異なる溶剤に溶解する第2接着剤層と、上記第2接着剤層に貼着された支持板とを含むことを特徴とする積層体。
- 請求項9に記載の積層体に含まれる第2接着剤層を形成するための接着剤。
- 平均分子量が5000〜10000の接着化合物を含むことを特徴とする請求項10に記載の接着剤。
- 炭化水素樹脂または極性溶媒溶解性化合物を含むことを特徴とする請求項10に記載の接着剤。
- 上記炭化水素樹脂は、シクロオレフィン系ポリマー、テルペン樹脂、ロジン系樹脂および石油樹脂からなる群より選択されることを特徴とする請求項12に記載の接着剤。
- 上記極性溶媒溶解性化合物は、コラーゲンペプチド、セルロース、およびポリビニルアルコール(PVA)からなる群より選択されることを特徴とする請求項12に記載の接着剤。
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KR1020090091546A KR101486597B1 (ko) | 2008-10-03 | 2009-09-28 | 박리 방법, 기판의 접착제, 및 기판을 포함하는 적층체 |
TW098132961A TWI483304B (zh) | 2008-10-03 | 2009-09-29 | 剝離方法、基板之黏著劑、及含基板之層合物 |
US12/588,037 US20100086799A1 (en) | 2008-10-03 | 2009-10-01 | Removal method, adhesive agent for substrate, and laminate including substrate |
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US20120073741A1 (en) * | 2009-06-11 | 2012-03-29 | Harima Chemicals, Inc. | Adhesive composition |
JP5489546B2 (ja) * | 2009-06-11 | 2014-05-14 | 東京応化工業株式会社 | 貼付方法及び貼付装置 |
JP5619481B2 (ja) * | 2010-06-15 | 2014-11-05 | 東京応化工業株式会社 | 接着剤組成物 |
JP6159050B2 (ja) | 2010-07-26 | 2017-07-05 | 東京応化工業株式会社 | 接着剤組成物及び接着フィルム |
US9263314B2 (en) * | 2010-08-06 | 2016-02-16 | Brewer Science Inc. | Multiple bonding layers for thin-wafer handling |
JP5681501B2 (ja) * | 2010-09-02 | 2015-03-11 | 東京応化工業株式会社 | 接着剤組成物 |
JP5681502B2 (ja) * | 2010-09-30 | 2015-03-11 | 東京応化工業株式会社 | 接着剤組成物 |
JP5632761B2 (ja) * | 2011-01-24 | 2014-11-26 | 東京応化工業株式会社 | 積層体 |
JP5728243B2 (ja) * | 2011-02-16 | 2015-06-03 | 東京応化工業株式会社 | 積層体 |
JP5956224B2 (ja) * | 2011-05-24 | 2016-07-27 | 東京応化工業株式会社 | 剥離用組成物および剥離方法 |
KR101638655B1 (ko) * | 2011-05-24 | 2016-07-11 | 도오꾜오까고오교 가부시끼가이샤 | 박리용 조성물 및 박리 방법 |
US9558983B2 (en) * | 2011-09-16 | 2017-01-31 | Lintec Corporation | Base film for dicing sheet and dicing sheet |
JP5661669B2 (ja) * | 2011-09-30 | 2015-01-28 | 東京応化工業株式会社 | 接着剤組成物、接着フィルムおよび基板の処理方法 |
WO2013116071A1 (en) * | 2012-01-30 | 2013-08-08 | 3M Innovative Properties Company | Apparatus, hybrid laminated body, method, and materials for temporary substrate support |
KR101777895B1 (ko) * | 2012-03-12 | 2017-09-12 | 도쿄 오카 고교 가부시키가이샤 | 접착제 조성물, 접착 필름 및 기판의 처리 방법 |
JP6006569B2 (ja) * | 2012-07-23 | 2016-10-12 | 東京応化工業株式会社 | 積層体及び積層体の製造方法 |
JP6014455B2 (ja) * | 2012-10-19 | 2016-10-25 | 富士フイルム株式会社 | 半導体装置の製造方法 |
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JP6159220B2 (ja) * | 2013-10-17 | 2017-07-05 | 東京応化工業株式会社 | 剥離用組成物及び剥離方法 |
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US20050100665A1 (en) * | 2003-11-06 | 2005-05-12 | General Electric Company | Method for applying an optical coating to a surface of an article |
JP2006135272A (ja) * | 2003-12-01 | 2006-05-25 | Tokyo Ohka Kogyo Co Ltd | 基板のサポートプレート及びサポートプレートの剥離方法 |
US7232740B1 (en) * | 2005-05-16 | 2007-06-19 | The United States Of America As Represented By The National Security Agency | Method for bumping a thin wafer |
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US7826113B2 (en) * | 2007-03-28 | 2010-11-02 | Konica Minolta Holdings, Inc. | Joined optical member, image display apparatus, and head-mounted display |
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