JP3940583B2 - Flat display device and manufacturing method thereof - Google Patents

Description

[0001]
BACKGROUND OF THE INVENTION
The present invention relates to a flat display device having a flat shape, and more particularly to a flat display device using a large number of electron-emitting devices and a method for manufacturing the same.
[0002]
[Prior art]
In recent years, various flat display devices have been developed as next-generation light-weight and thin display devices that replace cathode ray tubes (hereinafter referred to as CRT). Such flat display devices include a liquid crystal display (hereinafter referred to as LCD) that controls the intensity of light using the orientation of liquid crystal, and a plasma display panel (hereinafter referred to as PDP) that emits phosphors by ultraviolet rays of plasma discharge. And a field emission display (hereinafter referred to as FED) that emits a phosphor with an electron beam of a field emission type electron-emitting device.
[0003]
For example, an FED generally has a front substrate and a rear substrate facing each other with a predetermined gap, and these substrates are connected to each other through a rectangular frame-shaped side wall so that their peripheral portions are joined to each other. It constitutes an envelope. A phosphor screen is formed on the inner surface of the front substrate, and a number of electron-emitting devices are provided on the inner surface of the rear substrate as electron emission sources that excite the phosphor to emit light.
[0004]
Further, in order to support an atmospheric pressure load applied to the back substrate and the front substrate, a plurality of support members are disposed between these substrates. The potential on the back substrate side is almost the ground potential, and an anode voltage is applied to the phosphor screen. The red, green, and blue phosphors that make up the phosphor screen are irradiated with electron beams emitted from a large number of electron-emitting devices, and the phosphors emit light to display an image.
[0005]
In such a display device, the thickness of the display device can be reduced to about several millimeters, and the weight and thickness can be reduced as compared with a CRT currently used as a display of a television or a computer. Can do.
[0006]
[Problems to be solved by the invention]
In the FED as described above, the inside of the envelope needs to be evacuated. Moreover, it is necessary to fill the discharge gas after evacuating the PDP once. As a means for evacuating the envelope, for example, Japanese Patent Application Laid-Open No. 2001-229825 discloses a method in which final assembly of a front substrate and a rear substrate constituting the envelope is performed in a vacuum chamber.
[0007]
Here, first, the front substrate and the rear substrate disposed in the vacuum chamber are sufficiently heated. This is to reduce gas emission from the inner wall of the envelope, which is the main cause of the deterioration of the envelope vacuum. Next, when the front substrate and the rear substrate are cooled and the degree of vacuum in the vacuum chamber is sufficiently improved, a getter film for improving and maintaining the degree of envelope vacuum is formed on the phosphor screen. Thereafter, the front substrate and the rear substrate are heated again to a temperature at which the sealing material dissolves, and cooled in a state where the front substrate and the rear substrate are combined at a predetermined position until the sealing material is solidified.
[0008]
The vacuum envelope created by such a method serves as a sealing step and a vacuum sealing step, and does not require time as in the case of exhausting the inside of the envelope using an exhaust pipe, and A very good degree of vacuum can be obtained.
[0009]
However, in the above method, the sealing process performed in vacuum covers a wide range of heating, alignment, and cooling, and the front substrate and the rear substrate are bonded over a long period of time while the sealing material is dissolved and solidified. Must remain in place. Further, the front substrate and the rear substrate are thermally expanded with heating and cooling at the time of sealing, and the alignment accuracy is likely to deteriorate. Furthermore, there have been problems in productivity and characteristics associated with sealing, such as deterioration of the getter film due to heating during sealing.
[0010]
The present invention has been made in view of the above points, and an object of the present invention is to provide a flat display device that can be easily sealed with high positional accuracy in a vacuum atmosphere, and a method for manufacturing the same. is there.
[0011]
[Means for Solving the Problems]
In order to solve the above-described problems, a flat display device according to an aspect of the present invention includes a front substrate and a rear substrate that are arranged to face each other, and a sealing unit that seals the peripheral portions of the front substrate and the rear substrate to each other. An envelope with
The sealing portion includes a frame-shaped high melting point conductive member and a sealing material, and the high melting point conductive member has a higher melting point or softening point than the sealing material, and the front surface. Spring property in the direction perpendicular to the surface of the substrate and the back substrate,
The high melting point conductive member is disposed between the front substrate and the rear substrate in an elastically deformed state, and applies a pressing force to the inner surface of the front substrate and the inner surface of the rear substrate,
The sealing material is interposed between at least one of the high melting point conductive member and the front substrate and between the high melting point conductive member and the back substrate .
[0012]
In addition, a method for manufacturing a flat display device according to an aspect of the present invention includes a front substrate and a rear substrate having a front substrate and a rear substrate arranged to face each other, and a sealing portion including a high melting point conductive member and a sealing material. In the manufacturing method of the flat display device including the envelope in which the peripheral portions of the two are sealed to each other,
A frame-like high melting point conductive member having a melting point or softening point higher than that of the sealing material and having a spring property in a direction perpendicular to the surfaces of the front substrate and the back substrate is prepared,
While disposing the front substrate and the back substrate opposite to each other, disposing the high melting point conductive member and the sealing material between the peripheral portions of the front substrate and the back substrate,
In a state where the sealing material is solidified, the front substrate and the rear substrate arranged opposite to each other are overlapped, and the high melting point conductive member is elastically deformed in a direction perpendicular to the surfaces of the front substrate and the rear substrate,
In a state where the front substrate and the rear substrate are overlapped, the high melting point conductive member is energized to melt or soften the sealing material, and the peripheral portions of the front substrate and the rear substrate are sealed together. Yes.
[0013]
According to the flat display device and the manufacturing method of the above configuration, the substrate deflection when the front substrate and the rear substrate are overlapped is improved by the spring property of the high melting point conductive member, and the alignment accuracy of the front substrate and the rear substrate is improved. It can be improved and sealed.
[0014]
DETAILED DESCRIPTION OF THE INVENTION
Hereinafter, embodiments in which a flat display device according to the present invention is applied to an FED will be described in detail with reference to the drawings.
[0015]
As shown in FIGS. 1 to 3, this FED includes a front substrate 11 and a rear substrate 12 made of rectangular glass each having a thickness of 2.8 mm as insulating substrates, and these substrates are, for example, about 2.0 mm. They are placed opposite each other with a gap. The size of the back substrate 12 is slightly larger than that of the front substrate 11, and lead lines (not shown) for inputting video signals are formed on the outer periphery thereof. The front substrate 11 and the back substrate 12 constitute a flat rectangular vacuum envelope 10 whose peripheral portions are joined to each other via a substantially rectangular frame-shaped sealing portion 30 and the inside is maintained in a vacuum state. is doing.
[0016]
The sealing portion 30 includes a rectangular frame-shaped high melting point conductive member 18 having conductivity and first and second sealing materials 32 and 34. The high melting point conductive member 18 that also functions as a side wall is bonded to the peripheral portion of the front substrate 11 via the first sealing material 32, and the periphery of the rear substrate 12 via the second sealing material 34. Bonded to the part.
[0017]
The high melting point conductive member 18 has a higher melting point or softening point (that is, a temperature suitable for sealing) than the first and second sealing materials 32 and 34, and, for example, an iron-nickel alloy is used. . In addition, as the high melting point conductive member having conductivity, a material containing at least one of Fe, Cr, Ni, and Al is used. As the first and second sealing materials 32, for example, indium or an indium alloy is used. The melting point or softening point of the high melting point conductive member 18 is preferably 500 ° C. or higher, and the melting points or softening points of the first and second sealing materials are preferably lower than 300 ° C.
[0018]
In addition, the high melting point conductive member 18 and the first and second sealing materials 32 and 34 are between the maximum value and the minimum value within a numerical range of ± 20% with respect to the thermal expansion coefficients of the front substrate and the rear substrate. It is desirable to have a thermal expansion coefficient of
[0019]
Further, the high melting point conductive member 18 has resilience in a direction perpendicular to the surfaces of the front substrate 11 and the back substrate 12, that is, spring property. In the present embodiment, the high melting point conductive member 18 is formed in a substantially V-shaped cross-sectional shape. The high melting point conductive member 18 is disposed between the front substrate 11 and the rear substrate 12 in a state where it is slightly elastically deformed in a direction in which the V-shaped angle decreases, and due to its spring property, the inner surfaces of the front substrate and the rear substrate. The desired pressing force is applied to the. The high melting point conductive member 18 is preferably set to a spring constant of about 0.1 kgf / mm to 1.0 kgf / mm.
[0020]
As shown in FIGS. 2 and 3, a plurality of plate-like support members 14 are provided inside the vacuum envelope 10 in order to support an atmospheric pressure load applied to the front substrate 11 and the rear substrate 12. These support members 14 are disposed in a direction parallel to the short side of the vacuum envelope 10 and are disposed at predetermined intervals along a direction parallel to the long side. In addition, about the shape of the supporting member 14, it is not limited to plate shape, For example, a columnar supporting member etc. can also be used.
[0021]
A phosphor screen 16 shown in FIGS. 3 and 4 is formed on the inner surface of the front substrate 11. The phosphor screen 16 is configured by arranging red, green, and blue stripe-shaped phosphor layers and a black light absorbing layer 20 as a non-light emitting portion located between and around the phosphor layers. The phosphor layer extends in a direction parallel to the short side of the vacuum envelope, and is arranged at a predetermined interval along a direction parallel to the long side. Note that a metal back layer 17 made of, for example, an aluminum layer is deposited on the phosphor screen 16.
[0022]
Further, as shown in FIG. 3, on the inner surface of the back substrate 12, as an electron emission source for exciting the phosphor layer of the phosphor screen 16, a large number of electron emission elements 22 each emitting an electron beam and electron emission are provided. A large number of wirings (not shown) for driving the elements are provided. The electron-emitting devices 22 are arranged in a plurality of columns and a plurality of rows corresponding to each pixel.
[0023]
More specifically, a conductive cathode layer 24 is formed on the inner surface of the back substrate 12, and a silicon dioxide film 26 having a large number of cavities 25 is formed on the conductive cathode layer. On the silicon dioxide film 26, a gate electrode 28 made of molybdenum, niobium or the like is formed. A cone-shaped electron-emitting device 22 made of molybdenum or the like is provided in each cavity 25 on the inner surface of the back substrate 12.
[0024]
In the FED configured as described above, the video signal is input to the electron-emitting devices 22 and the gate electrode 28 formed in a matrix. When the electron-emitting device 22 is used as a reference, a gate voltage of +100 V is applied when the luminance is highest. Further, +10 kV is applied to the phosphor screen 16. Thereby, an electron beam is emitted from the electron emitter 22. The magnitude of the electron beam emitted from the electron-emitting device 22 is modulated by the voltage of the gate electrode 28, and this electron beam excites the phosphor layer of the phosphor screen 16 to emit light, thereby displaying an image. .
[0025]
Next, a method for manufacturing the FED configured as described above will be described in detail. First, the electron-emitting device 22 and various wirings are formed on the glass plate for the back substrate. Subsequently, the plate-like support member 14 is fixed on the back substrate 12 with, for example, frit glass in the atmosphere.
[0026]
In addition, the phosphor screen 16 is formed on the plate glass to be the front substrate 11. In this method, a plate glass having the same size as the front substrate 11 is prepared, and a phosphor layer stripe pattern is formed on the plate glass by a plotter machine. The plate glass on which the phosphor stripe pattern is formed and the plate glass for the front substrate are placed on a positioning jig and set on an exposure table, so that the phosphor screen 16 is formed by exposure and development. Next, a metal back layer 17 made of an aluminum film is formed on the phosphor screen 16.
[0027]
Subsequently, indium is filled in a frame shape as first and second sealing materials in the inner peripheral portion of the front substrate 11 and the inner peripheral portion of the rear substrate 12 which are sealing surfaces. At this time, the thickness of the formed indium layer is about 0.3 mm, and the indium layer is finally formed thicker than the thickness after the envelope is assembled.
[0028]
On the other hand, the high melting point conductive member 18 is formed in a rectangular frame shape by a Ni-Fe alloy having a thickness of 0.2 mm, and the cross-sectional shape thereof is substantially V-shaped with a side width of about 15 mm. ing. Here, the linear thermal expansion coefficient of the Ni—Fe alloy is substantially equal to the linear thermal expansion coefficient of the glass material constituting the substrate.
[0029]
Next, the front substrate 11 on which the phosphor screen 16 is formed as described above and the rear substrate 12 to which the support member 14 is fixed are arranged opposite to each other with a predetermined gap therebetween, and the high melting point conductive member 18 is disposed. Are placed in the vacuum processing apparatus 100 in a state of being placed between the substrates.
[0030]
As shown in FIG. 5, this vacuum processing apparatus 100 includes a load chamber 101, a baking, an electron beam cleaning chamber 102, a cooling chamber 103, a getter film deposition chamber 104, an assembly chamber 105, and a cooling chamber 106, which are arranged in order. And an unload chamber 107. Each of these chambers is configured as a processing chamber capable of vacuum processing, and all the chambers are evacuated when the FED is manufactured. Adjacent processing chambers are connected by a gate valve or the like.
[0031]
The back substrate 12 and the front substrate 11 described above are put into the load chamber 101, and after the inside of the load chamber 101 is evacuated, it is sent to the baking and electron beam cleaning chamber 102. In the baking and electron beam cleaning chamber 102, the back substrate 12 and the front substrate 11 are heated to a temperature of 350 ° C., and the surface adsorption gas of each member is released.
[0032]
Simultaneously with the heating, an electron beam is applied to the phosphor screen surface of the front substrate 11 and the electron emitting element surface of the rear substrate 12 from an electron beam generator (not shown) attached to the baking and electron beam cleaning chamber 102. Since this electron beam is deflected and scanned by a deflection device mounted outside the electron beam generator, the entire surface of the phosphor screen and the surface of the electron-emitting device can be cleaned with an electron beam.
[0033]
After heating and electron beam cleaning, the back substrate 12 and the front substrate 11 are sent to the cooling chamber 103 and cooled to a temperature of about 100 ° C., for example. Subsequently, the back substrate 12 and the front substrate 11 are sent to a vapor deposition chamber 104 for forming a getter film, where a Ba film is deposited on the outside of the phosphor screen as a getter film.
[0034]
Subsequently, the back substrate 12 and the front substrate 11 are sent to the assembly chamber 105. In this assembly chamber 105, as shown in FIG. 6A, these substrates are heated to, for example, about 100 ° C., that is, above the melting point or softening point of the first and second sealing materials 32,. The front substrate 11, the rear substrate 12, and the high melting point conductive member 18 are relatively aligned while being maintained at a low temperature. At this time, the indium layers as the first and second sealing materials 32 and 34 are in a solidified state.
[0035]
Note that the temperature of the front substrate 11 and the back substrate 12 is maintained at a temperature lower than the melting point or softening point of the first and second sealing materials 32 and 34 until just before the energization heating process described later, and preferably sealing is performed. The temperature difference from the melting point of the material is maintained within a range of 20 ° C to 150 ° C.
[0036]
After the alignment is completed, as shown in FIG. 6B, the front substrate 11 and the rear substrate 12 are overlapped with the high melting point conductive member 18 interposed therebetween, and a pressing force of about 50 kgf is applied from both sides to the front substrate and Apply to the back substrate. At this time, the V-shaped high melting point conductive member 18 is pressed from both sides by the solidified first and second sealing materials 32 and 34, and is elastically deformed in a direction perpendicular to the substrate. The angle decreases.
[0037]
This absorbs the thickness of the first and second sealing materials 32 and 34 that are filled thicker, and eliminates the difference in the gap between the substrates at the central portion and the sealing portion of the front substrate and the rear substrate. it can. Therefore, even in the sealing portion 30, the front substrate 11 and the back substrate 12 are not warped, and the distance between the front substrate 11 and the back substrate 12 is about 2 mm, which is equal to the height of the support member 14 over the entire area. Retained.
[0038]
In this state, an electrode is brought into contact with the high melting point conductive member 18 and a direct current 140A is applied for 40 seconds. Then, this current also flows through the first and second sealing materials 32 and 34, that is, indium, and the refractory conductive member 18 and indium generate heat. Thereby, indium is heated to about 200 ° C. and melted or softened. Then, when the first sealing material 32 is melted or softened, the energization is stopped, and the heat of the high melting point conductive member 18 and indium is quickly transferred to the surrounding front substrate 11 and back substrate 12 to diffuse indium. Solidify.
[0039]
As shown in FIG. 6C, during energization heating, the high melting point conductive member 18 presses molten or softened indium toward the inner surface of the substrate with an appropriate spring force due to its own restoring property or spring property. . Thereby, each indium layer is solidified in a slightly crushed state. At this time, the average thickness of the indium layer is about 0.15 mm.
[0040]
In this manner, the front substrate 11 and the rear substrate 12 are sealed through the high melting point conductive member 18 and the first and second sealing materials 32 and 34 to form the vacuum envelope 10. After the energization is stopped, the sealed vacuum envelope 10 is carried out from the assembly chamber 105 in about 60 seconds. The vacuum envelope 10 thus formed is cooled to room temperature in the cooling chamber 106 and taken out from the unload chamber 107.
[0041]
According to the FED configured as described above and the manufacturing method thereof, the back substrate and the front substrate can be sealed in a vacuum atmosphere, and at the same time, the sealing is made by energization heating excellent in mass productivity. Can do. In addition, since the high melting point conductive member has a spring property in a direction perpendicular to the substrate, at the time of sealing, there is no difference in the gap between the substrate at the central portion of the substrate and the sealing portion. It is possible to prevent warping of the substrate in the portion. As a result, the front substrate and the rear substrate can be aligned and sealed with high accuracy.
[0042]
Furthermore, during energization heating, the melted or softened sealing material can be pressed toward the substrate with an appropriate spring force by the high melting point conductive member, and it is possible to suppress the occurrence of a leak path due to insufficient sealing material. It becomes.
[0043]
In the above-described embodiment, the refractory conductive member having a V-shaped cross section is used. However, as long as the high melting point conductive member has a spring property in a direction perpendicular to the surfaces of the front substrate and the rear substrate. It is good also as a shape.
[0044]
According to the FED according to the second embodiment shown in FIG. 7, a pipe-shaped member made of Ni—Fe alloy having a thickness of 0.12 mm and a diameter of 3 mm is used as the high melting point conductive member 18 constituting the sealing portion 30. Used. The high melting point conductive member 18 is bonded to the front substrate 11 and the back substrate 12 through indium as the first and second sealing materials 32 and 34, respectively. The high melting point conductive member 18 has a spring property in a direction perpendicular to the surfaces of the front substrate 11 and the back substrate 12.
[0045]
In the sealed state, the high melting point conductive member 18 is elastically deformed into a crushed state, and an appropriate spring force is applied in a direction perpendicular to the surfaces of the front substrate 11 and the back substrate 12. Other configurations are the same as those of the first embodiment described above, and a detailed description thereof will be omitted.
[0046]
The FED having the above configuration is manufactured by a method similar to that of the first embodiment described above. When the manufacturing conditions are the same as those in the first embodiment, during energization heating, the refractory conductive member 18 is energized with a direct current 40A for 40 seconds to melt indium, and then cooled for 40 seconds. As a result, indium can be solidified and sealed. Therefore, also in the second embodiment, it is possible to obtain the same operational effects as those in the first embodiment described above, shorten the energization and cooling time, and improve the manufacturing efficiency. .
[0047]
In the second embodiment described above, the entire outer peripheral surface of the high melting point conductive member 18 may be filled with a sealing material 35 such as indium as shown in FIG. In this case, the filling of indium can be completed simply by immersing the high melting point conductive member 18 in the indium solder bath, and the labor for manufacturing can be saved. At the same time, the front substrate 11 and the back substrate 12 can be directly sealed with the sealing material itself, and the airtightness of the vacuum envelope is improved.
[0048]
The present invention is not limited to the above-described embodiment, and various modifications can be made within the scope of the present invention. For example, in the above-described embodiment, indium, which is a sealing material, is filled on the substrate side, but may be filled on the high melting point conductive member side. Further, the current to be passed through the high melting point conductive member is not limited to direct current, and commercial frequency or high frequency alternating current may be used.
[0049]
Further, in the above-described embodiment, the high melting point conductive member is arranged at a predetermined position in the vacuum chamber at the time of assembly. However, the front substrate is previously used in the atmosphere by using a sealing material such as indium. Or it is good also as a structure adhere | attached on a back substrate.
[0050]
The present invention is not limited to a display device that requires a vacuum envelope such as an FED or SED, but is also effective for other display devices such as a PDP in which a discharge gas is injected after being evacuated once. .
[0051]
【The invention's effect】
As described above, according to the present invention, it is possible to provide a flat display device that can be easily sealed with high positional accuracy in a vacuum atmosphere, and a method for manufacturing the same.
[Brief description of the drawings]
FIG. 1 is a perspective view showing an FED according to a first embodiment of the invention.
FIG. 2 is a perspective view showing a state where a front substrate of the FED is removed.
3 is a cross-sectional view taken along line AA in FIG.
FIG. 4 is a plan view showing a phosphor screen of the FED.
FIG. 5 is a diagram schematically showing a vacuum processing apparatus used for manufacturing the FED.
FIG. 6 is a cross-sectional view schematically showing a manufacturing process of the FED.
FIG. 7 is a cross-sectional view showing an FED sealing portion and a high melting point conductive member according to a second embodiment of the present invention.
FIG. 8 is a cross-sectional view showing an FED sealing portion and a high melting point conductive member according to another embodiment of the present invention.
[Explanation of symbols]
DESCRIPTION OF SYMBOLS 10 ... Vacuum envelope 11 ... Front substrate 12 ... Back substrate 14 ... Support member 16 ... Phosphor screen 17 ... Metal back layer 18 ... High melting point conductive member 22 ... Electron emission element 30 ... Sealing part 32 ... First sealing Dressing material 34 ... Second sealing material 35 ... Sealing material

Claims (13)

An envelope having a front substrate and a rear substrate arranged to face each other, and a sealing portion that seals the peripheral portions of the front substrate and the rear substrate to each other;
The sealing portion includes a frame-shaped high melting point conductive member and a sealing material, and the high melting point conductive member has a higher melting point or softening point than the sealing material, and the front surface. Spring property in the direction perpendicular to the surface of the substrate and the back substrate,
The high melting point conductive member is disposed between the front substrate and the rear substrate in an elastically deformed state, and applies a pressing force to the inner surface of the front substrate and the inner surface of the rear substrate,
The flat display device , wherein the sealing material is interposed between at least one of the high melting point conductive member and the front substrate and between the high melting point conductive member and the rear substrate .   The flat display device according to claim 1, wherein the high melting point conductive member is entirely covered with the sealing material.   The flat display device according to claim 1, wherein the high melting point conductive material constitutes a side wall of the envelope.   4. The flat display device according to claim 1, wherein the sealing material has conductivity. The sealing material, flat panel display device according to any one of claims 1 to 4, characterized in that an alloy containing indium or indium. The refractory conductive member, at least Fe, Cr, Ni, flat panel display device according to any one of claims 1 to 5, characterized in that it is containing any of Al. The sealing material, flat panel display device according to any one of claims 1 to 6, characterized in that it has a melting point or softening point of 300 ° C. or less Flat panel display device according to any one of claims 1 to 7 the refractory conductive member, characterized in that it has a melting point of at least 500 ° C.. The thermal expansion coefficient of the high melting point conductive member is between a maximum value and a minimum value in a numerical range of ± 20% of the thermal expansion coefficient of each of the front substrate and the rear substrate. 9. The flat display device according to any one of items 8 to 8 . The phosphor according to any one of claims 1 to 9 , further comprising: a phosphor provided inside the envelope; and an electron source for exciting the phosphor, wherein the inside of the envelope is maintained in a vacuum. A flat display device according to claim 1. A plane having an envelope having a front substrate and a rear substrate disposed opposite to each other, and peripheral portions of the front substrate and the rear substrate are sealed to each other by a sealing portion including a high melting point conductive member and a sealing material. In the manufacturing method of the display device,
A frame-like high melting point conductive member having a melting point or softening point higher than that of the sealing material and having a spring property in a direction perpendicular to the surfaces of the front substrate and the back substrate is prepared,
While disposing the front substrate and the back substrate opposite to each other, disposing the high melting point conductive member and the sealing material between the peripheral portions of the front substrate and the back substrate,
In a state where the sealing material is solidified, the front substrate and the rear substrate arranged opposite to each other are overlapped, and the high melting point conductive member is elastically deformed in a direction perpendicular to the surfaces of the front substrate and the rear substrate,
In a state where the front substrate and the rear substrate are overlapped, the high melting point conductive member is energized to melt or soften the sealing material, and the peripheral portions of the front substrate and the rear substrate are sealed together. For manufacturing a flat display device. The flat display according to claim 11 , wherein the temperature of the front substrate and the rear substrate immediately before energizing the high melting point conductive member is set to a temperature lower than the melting point or softening point of the sealing material. Device manufacturing method. The temperature of the front substrate and the back substrate immediately before energizing the high melting point conductive member is set so that the difference from the melting point of the sealing material is in the range of 20 ° C to 150 ° C. A method for manufacturing a flat display device according to claim 12 .

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