JP2002184328A - Image display device and its manufacturing method - Google Patents

Abstract

PROBLEM TO BE SOLVED: To provide an image display device that can be easily sealed in a vacuum atmosphere and its manufacturing method. SOLUTION: The vacuum outer case of the image display device has a back substrate and a front substrate 11 arranged opposed to each other and a side wall provided between these substrates. A fluorescent screen 16 is formed on the inner face of the front substrate and electron emission elements are provided on the back substrate. A primary coat 31 and an indium layer 32 overlapping this primary coat are formed on the sealing face 11a between the front substrate and the side wall, and indium layer is formed in a pattern having many bending part 32a. By heating and melting indium in a vacuum atmosphere, the front substrate and the back substrate are mutually sealed through the side wall.

Description

DETAILED DESCRIPTION OF THE INVENTION

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to an image display device comprising: an envelope having a rear substrate and a front substrate opposed to each other; and a plurality of image display elements provided inside the envelope. And its manufacturing method.

[0002]

2. Description of the Related Art In recent years, electron-emitting devices (hereinafter referred to as emitters) have been developed as next-generation light-weight and thin flat-panel display devices.
Are being developed, and a display device in which the display device is arranged to face the phosphor screen is being developed. As the emitter, a field emission type or surface conduction type element is assumed. Generally, a display device using a field emission type electron-emitting device as an emitter is a field emission display (hereinafter, referred to as an FED), and a display device using a surface conduction type electron-emitting device as an emitter is a surface emission type. This is called a display (hereinafter, referred to as SED).

For example, an FED generally has a front substrate and a rear substrate opposed to each other with a predetermined gap therebetween.
These substrates constitute a vacuum envelope by joining their peripheral parts to each other via a rectangular frame-shaped side wall.
A phosphor screen is formed on the inner surface of the front substrate, and a number of emitters are provided on the inner surface of the rear substrate as electron emission sources for exciting the phosphor to emit light. In addition, a plurality of support members are disposed between the rear substrate and the front substrate to support the atmospheric load applied thereto.

The potential on the rear substrate side is almost 0 V, and an anode voltage Va is applied to the phosphor screen. An image is displayed by irradiating the red, green, and blue phosphors constituting the phosphor screen with an electron beam emitted from the emitter to cause the phosphors to emit light.

In such an FED, the gap between the front substrate and the rear substrate can be set to several mm or less, and compared with a cathode ray tube (CRT) currently used as a display of a television or a computer. Lightening and thinning can be achieved.

[0006]

SUMMARY OF THE INVENTION The above-mentioned flat panel display device
Then, the degree of vacuum inside the vacuum envelope is set to, for example, 10^-5-10
^-6It is necessary to keep Pa. In the conventional evacuation process, vacuum
Baking process to heat the envelope to about 300 ° C
To release the surface adsorption gas inside the envelope.
However, such a method releases the surface adsorbed gas sufficiently.
And it is difficult to obtain a high degree of vacuum.
You.

As a method of increasing the degree of vacuum inside the vacuum envelope, the back substrate, the side walls, and the front substrate are put into a vacuum apparatus, and they are subjected to baking and electron beam irradiation in a vacuum atmosphere to adsorb the surface. After the gas is released, a method of forming a getter film and sealing the side wall to the rear substrate and the front substrate using frit glass or the like in a vacuum atmosphere is considered. According to this method, the surface adsorption gas can be sufficiently released by the electron beam cleaning, and the getter film is not oxidized, and a sufficient gas adsorption effect can be obtained. Further, since no exhaust pipe is required, the space of the image display device is not wasted.

[0008] However, when sealing is performed using frit glass in a vacuum, it is necessary to heat the frit glass to a high temperature of 400 ° C. or more. There is a problem that the hermeticity and sealing strength of the enclosure are deteriorated, and the reliability is reduced. In addition, due to the characteristics of the electron-emitting device, it may be better to avoid raising the temperature to 400 ° C. or higher. In such a case, a method of sealing with frit glass is not preferable.

An object of the present invention is to provide an image display device capable of easily performing sealing in a vacuum atmosphere and a method of manufacturing the same.

[0010]

In order to achieve the above object, an image display apparatus according to the present invention comprises a rear substrate, and an image display device which is disposed opposite to the rear substrate and which is directly or directly attached to the rear substrate by a metal sealing material. An envelope having a front substrate indirectly sealed, and a plurality of image display elements provided inside the envelope, wherein the metal sealing material is the rear substrate and the front substrate And a metal sealing material layer extending over the entire circumference of the sealing surface, and the metal sealing material layer is formed by a linear portion of the sealing surface. Is characterized by having a bent portion or a curved portion in at least a part of the portion extending along.

Another image display device according to the present invention is a rear substrate, and a front substrate disposed to face the rear substrate and sealed directly or indirectly to the rear substrate with a metal sealing material. And a plurality of image display elements provided inside the envelope, wherein the metal sealing material is provided on a sealing surface between the rear substrate and the front substrate. And forming a metal sealing material layer extending over the entire circumference of the sealing surface, and the metal sealing material layer has at least one of a portion extending along a linear portion of the sealing surface. The portion is provided with a side edge having irregularities.

On the other hand, a method of manufacturing an image display device according to the present invention is directed to a back substrate and a front surface which is disposed to face the back substrate and is directly or indirectly sealed to the back substrate by a metal sealing material. An envelope having a substrate;
A plurality of image display elements provided inside the envelope,
In the method for manufacturing an image display device provided with, a metal sealing material is filled in a sealing surface between the rear substrate and the front substrate, and the metal sealing material extends over the entire circumference of the sealing surface. Step of forming a layer and after filling the metal sealing material, heat and melt the metal sealing material in a vacuum atmosphere, and directly or indirectly connect the back substrate and the front substrate with the sealing surface. And a step of filling the metal sealing material in the metal sealing material layer, wherein at least a part of the metal sealing material layer extending along the linear portion of the sealing surface has a bent portion. Alternatively, it is characterized in that a curved portion is formed.

According to another aspect of the present invention, there is provided a method of manufacturing an image display device, comprising: filling a sealing surface between the rear substrate and the front substrate with a metal sealing material; Step of forming a metal sealing material layer extending over and after filling the metal sealing material, heating and melting the metal sealing material in a vacuum atmosphere, the back substrate and the front substrate A step of directly or indirectly sealing at the sealing surface, wherein in the step of filling the metal sealing material, the metal sealing material layer extends along a linear portion of the sealing surface. The metal sealing material is filled so that at least a part of the portion forms a side edge having irregularities.

In the image display device and the method of manufacturing the same according to the present invention, a low melting point metal material having a melting point of 350 ° C. or less is used as the metal sealing material, for example, indium or an alloy containing indium is used. .

According to the image display apparatus and the method of manufacturing the same as described above, the front substrate and the rear substrate are directly or indirectly sealed using the metal sealing material layer, thereby providing the image display device on the rear substrate. The sealing can be performed at a low temperature that does not cause thermal damage to the electron-emitting devices and the like. Also, unlike the case where frit glass is used, many air bubbles are not generated, and the airtightness of the vacuum envelope,
Sealing strength can be improved.

At the same time, at least a part of the metal sealing material layer extending along the linear portion of the sealing surface has a bent portion or a curved portion. Alternatively, in the metal sealing material layer, at least a part of a portion extending along a linear portion of the sealing surface has a side edge having irregularities. Therefore, even when the metal sealing material is melted at the time of sealing and the viscosity is reduced, the flow of the metal sealing material is suppressed by the above-described bent portion, curved portion, or unevenness of the side edge, and the metal sealing material is held at a predetermined position. be able to. Accordingly, it is possible to obtain an image display device in which the metal sealing material can be easily handled and can be easily and reliably sealed in a vacuum atmosphere, and a method of manufacturing the same.

[0017]

DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS Hereinafter, an embodiment in which an image display device of the present invention is applied to an FED will be described in detail with reference to the drawings. As shown in FIGS. 1 and 2, the FED includes a front substrate 11 and a rear substrate 12 each made of rectangular glass as an insulating substrate, and these substrates have a gap of about 1.5 to 3.0 mm. They are placed facing each other. Then, the front substrate 11 and the rear substrate 1
Reference numeral 2 denotes a flat rectangular vacuum envelope 10 whose peripheral edges are sealed via a rectangular frame-shaped side wall 18 and whose inside is maintained in a vacuum state.

As will be described later, the back substrate 12 and the side wall 18
The sealing surface between the two is made of low melting glass 3 such as frit glass.
0, and the space between the front substrate 11 and the side wall 18 is sealed by a sealing layer 33 in which an underlayer 31 formed on the sealing surface and an indium layer 32 formed on the underlayer are fused. Is being worn.

Inside the vacuum envelope 10, a rear substrate 12 is provided.
And to support the atmospheric pressure load applied to the front substrate 11,
A plurality of support members 14 are provided. These support members 14 extend in a direction parallel to the long sides of the vacuum envelope 10 and are arranged at predetermined intervals along a direction parallel to the short sides. The shape of the support member 14 is not particularly limited to this, and a columnar support member may be used.

As shown in FIG. 3, a phosphor screen 16 is formed on the inner surface of the front substrate 11. The phosphor screen 16 is formed of phosphor layers R, G, and B emitting three colors of red, green, and blue, and a matrix-shaped black light absorbing portion 20. The above-described support member 14 is placed so as to be hidden by the shadow of the black light absorbing portion. On the phosphor screen 16, an aluminum layer (not shown) is deposited as a metal back.

As shown in FIG. 2, on the inner surface of the back substrate 12, a large number of field emission type electron emitting devices each emitting an electron beam are provided as an electron emission source for exciting the phosphor layers R, G, B. 22 are provided. These electron-emitting devices 22 are arranged in a plurality of columns and a plurality of rows corresponding to each pixel, and function as a pixel display device.

More specifically, a conductive cathode layer 24 is formed on the inner surface of the back substrate 12, and a silicon dioxide film 26 having a number of cavities 25 is formed on the conductive cathode layer. . On the silicon dioxide film 26, a gate electrode 28 made of molybdenum, niobium or the like is formed. A cone-shaped electron-emitting device 22 made of molybdenum or the like is provided in each cavity 25 on the inner surface of the back substrate 12. In addition, on the back substrate 12, a matrix-like wiring (not shown) connected to the electron-emitting device 22 is formed.

In the FED configured as described above,
The video signal is input to the electron-emitting device 22 and the gate electrode 28 formed in a simple matrix system. On the basis of the electron-emitting device 22, when the brightness is the highest, +
A gate voltage of 100 V is applied. Further, +10 kV is applied to the phosphor screen 16. The size of the electron beam emitted from the electron-emitting device 22 is modulated by the voltage of the gate electrode 28, and the electron beam excites the phosphor layer of the phosphor screen 16 to emit light, thereby displaying an image. .

Next, a method of manufacturing the FED configured as described above will be described in detail. First, the phosphor screen 16 is formed on a plate glass to be the front substrate 11. For this, a glass sheet having the same size as the front substrate 11 is prepared, and a stripe pattern of the phosphor layer is formed on the glass sheet by a plotter machine. Exposure is achieved by placing the plate glass on which the phosphor stripe pattern is formed and the plate glass for the front substrate on a positioning jig and setting it on an exposure table.
Develop to produce phosphor screen 16.

Subsequently, the electron-emitting devices 22 are formed on the glass plate for the rear substrate. In this case, a matrix-shaped conductive cathode layer is formed on a sheet glass, and an insulating film of a silicon dioxide film is formed on the conductive cathode layer by, for example, a thermal oxidation method, a CVD method, or a sputtering method.

After that, a metal film for forming a gate electrode such as molybdenum or niobium is formed on the insulating film by, for example, a sputtering method or an electron beam evaporation method. Next, a resist pattern having a shape corresponding to the gate electrode to be formed is formed on the metal film by lithography. Using the resist pattern as a mask, the metal film is etched by a wet etching method or a dry etching method to form a gate electrode 28.

Next, the cavity is formed by etching the insulating film by wet etching or dry etching using the resist pattern and the gate electrode as a mask. Then, after removing the resist pattern, a release layer made of, for example, aluminum, nickel, or cobalt is formed on the gate electrode 28 by performing electron beam evaporation from a direction inclined at a predetermined angle with respect to the rear substrate surface. Thereafter, for example, molybdenum as a material for forming a cathode is deposited by an electron beam evaporation method from a direction perpendicular to the surface of the rear substrate. Thus, the electron-emitting device 22 is formed inside each cavity 25. Subsequently, the release layer is removed by a lift-off method together with the metal film formed thereon.

Subsequently, the sealing surfaces between the peripheral portion of the rear substrate 12 on which the electron-emitting devices 22 are formed and the rectangular frame-shaped side walls 18 are sealed to each other with low melting glass 30 in the atmosphere. At the same time, the plurality of support members 14 are sealed on the rear substrate 12 with the low-melting glass 30 in the atmosphere.

Thereafter, the rear substrate 12 and the front substrate 11 are sealed to each other via the side wall 18. In this case, as shown in FIGS. 4 and 5, first, the sealing surface 1 on the front substrate 11 side is used.
A base layer 31 is formed over the entire periphery of the inner peripheral portion 1a. The sealing surface 11 a has a rectangular frame shape corresponding to the upper surface of the side wall 18 which becomes the sealing surface 18 a on the rear substrate 12 side, and extends along the peripheral edge of the inner surface of the front substrate 11. The sealing surface 11 a has two pairs of straight portions and four corners facing each other, and has substantially the same dimensions and the same width as the upper surface of the side wall 18.

The width of the underlayer 31 is formed slightly smaller than the width of the sealing surface 11a. In the present embodiment, the base layer 31 is formed by applying a silver paste.

Subsequently, indium is applied as a metal sealing material on the underlayer 31 to form an indium layer 32 which extends continuously over the entire circumference of the underlayer 31 without a break. At this time, a portion of the indium layer 32 extending along each linear portion of the sealing surface 11a is formed by a large number of sharply bent portions 32.
A pattern having a ramen structure having a is formed in a shape in which the patterns are continuously arranged at a predetermined pitch. The indium layer 32
Is formed to have a substantially constant width, and as a result, the indium layer 3 is formed.
The two side edges also have many bent portions. Note that the indium layer 32 is applied within the width of the underlayer 31.

The melting point of the metal sealing material is about 350 ° C.
In the following, it is desirable to use a low melting point metal material having excellent adhesion and bonding properties. Indium (In) used in this embodiment has not only a low melting point of 156.7 ° C. but also excellent characteristics such as a low vapor pressure, a soft and strong impact, and a low brittleness even at a low temperature. In addition, it can be directly bonded to glass depending on conditions, and is a material suitable for the purpose of the present invention.

Further, as the low melting point metal material, an indium alloy to which elements such as silver oxide, silver, gold, copper, aluminum, zinc, tin and the like are added alone or in combination can be used instead of simple substance of In. For example, In97% -A
In the case of g3% eutectic alloy, the melting point is further lowered to 141 ° C., and the mechanical strength can be increased.

In the above description, the expression "melting point" is used, but in the case of an alloy composed of two or more kinds of metals, the melting point may not be determined singly. Generally, in such a case, the liquidus temperature and the solidus temperature are defined. The former is the temperature at which part of the alloy starts to solidify when the temperature is lowered from the liquid state, and the latter is the temperature at which all of the alloy solidifies. In the present embodiment, for convenience of explanation,
In such a case, the expression "melting point" will be used, and the solidus temperature will be called the melting point.

On the other hand, the underlayer 31 is made of a material having good wettability and airtightness with respect to the metal sealing material, that is, a material having high affinity with the metal sealing material. In addition to the silver paste described above, a metal paste such as gold, aluminum, nickel, cobalt, and copper can be used. In addition to the metal paste, as the base layer 31, a metal plating layer of silver, gold, aluminum, nickel, cobalt, copper, or the like, a deposited film, or a glass material layer can be used.

Subsequently, as shown in FIG. 6, the sealing surface 11a
The front substrate 11 in which the underlayer 31 and the indium layer 32 are formed, and the rear assembly in which the side wall 18 is sealed to the rear substrate 12, with the sealing surfaces 11a and 18a facing each other, It is held by a jig or the like in a state of facing a predetermined distance, and is put into a vacuum processing apparatus.

As shown in FIG. 7, this vacuum processing apparatus 10
Numeral 0 has a load chamber 101, a baking, electron beam cleaning chamber 102, a cooling chamber 103, a getter film deposition chamber 104, an assembling chamber 105, a cooling chamber 106, and an unloading chamber 107 provided in order. . Each of these chambers is configured as a processing chamber capable of performing vacuum processing, and all the chambers are evacuated during the manufacture of the FED. Adjacent processing chambers are connected by a gate valve or the like.

The rear-side assembly and the front substrate 11 facing each other at a predetermined interval are put into a load chamber 101, and the inside of the load chamber 101 is evacuated to a vacuum atmosphere. In the baking and electron beam cleaning chamber 102, when a high degree of vacuum of about 10 ⁻⁵ Pa is reached, the back assembly and the front substrate are heated to a temperature of about 300 ° C. and baked, and the surface of each member is adsorbed. Allow sufficient gas to be released.

At this temperature, the indium layer (having a melting point of about 156)
C) 32 melts. Here, as described above, since the indium layer 32 is formed in a pattern having a large number of bent portions 32a, the flow of indium is suppressed even when it is melted. At the same time, since the indium layer 32 is formed on the base layer 31 having a high affinity, the molten indium is held on the base layer 31 without flowing, and the molten indium is kept on the electron emission element 22 side, the outside of the rear substrate, or the fluorescence Outflow to the body screen 16 side is prevented.

In the baking / electron beam cleaning chamber 102, simultaneously with heating, an electron beam generator (not shown) attached to the baking / electron beam cleaning chamber 102 sends a phosphor screen surface of the front substrate 11 and a back surface. An electron beam is irradiated on the electron-emitting device surface of the substrate 12. Since the electron beam is deflected and scanned by a deflecting device mounted outside the electron beam generator, it is possible to clean the entire surface of the phosphor screen surface and the electron emission element surface with the electron beam.

After the heating and the electron beam cleaning, the rear substrate side assembly and the front substrate 11 are sent to the cooling chamber 103, for example, about 1 mm.
Cool to a temperature of 00 ° C. Subsequently, the back-side assembly and the front substrate 11 are sent to a getter film deposition chamber 104, where a Ba film is deposited as a getter film outside the phosphor screen. The surface of the Ba film is prevented from being contaminated with oxygen, carbon, or the like, and can maintain an active state.

Next, the rear-side assembly and the front substrate 11 are sent to an assembly chamber 105, where they are heated to 200 ° C., and the indium layer 32 is again melted or softened into a liquid state.
Also in this case, similarly to the above, the indium layer 32 is formed in a pattern having a large number of bent portions 32a and is formed on the high affinity base layer 31.
The molten indium is held on the underlayer 31 without flowing. Then, in this state, after the front substrate 11 and the side wall 18 are joined and pressurized at a predetermined pressure, the indium is cooled and solidified. Thereby, the sealing surface 11a of the front substrate 11 and the sealing surface 18a of the side wall 18 are sealed by the sealing layer 33 in which the indium layer 32 and the base layer 31 are fused, and the vacuum envelope 10 is formed. .

The vacuum envelope 10 thus formed is
Is cooled to room temperature in the cooling chamber 106 and then taken out of the unloading chamber 107. By the above process, FED
Is completed.

According to the FED configured as described above and the method of manufacturing the same, the front substrate 11 and the rear substrate 12 are sealed in a vacuum atmosphere, so that the surface of the substrate can be combined with baking and electron beam cleaning. The adsorbed gas can be sufficiently released, and the getter film is not oxidized, so that a sufficient gas adsorbing effect can be obtained. Thereby, an FED that can maintain a high degree of vacuum can be obtained.

Further, by using indium as a sealing material, foaming at the time of sealing can be suppressed, and an FED having high airtightness and sealing strength can be obtained.
Furthermore, since the indium layer 32 provided on the sealing surface is formed in a pattern having a large number of bent portions 32a, even when indium is melted in the sealing step,
Inflow of indium can be suppressed and the indium can be held at a predetermined position. Therefore, handling of indium is simplified, and 5
Even a large image display device having a size of 0 inch or more can be easily and reliably sealed.

At the same time, according to the present embodiment, since the indium layer 32 is formed on the underlayer 31 having a high affinity, even if the indium is melted in the sealing step, the outflow of indium can be more reliably prevented. It is possible to realize easy and reliable sealing.

In the above-described embodiment, the indium layer 32 has a structure having a large number of bent portions over the entire length of a portion extending along each linear portion of the sealing portion 11a. If at least a portion of the surface 11a extending along the linear portion has a bent portion or a curved portion, the effect of suppressing the flow of molten indium can be obtained as in the above-described embodiment.

The pattern shape of the indium layer 32 is not limited to the ramen structure, and the same operation and effect can be obtained even if the pattern is as shown in FIG. That is, as shown in FIG. 8A, the indium layer 32 has a sawtooth pattern in which the angle θ of the bent portion 32 is acute,
A continuous crank-shaped pattern having a bent portion 32 at a substantially right angle as shown in FIG. 8B, or a substantially triangular continuous pattern as shown in FIG. 8C may be used. Furthermore,
The pattern shape of the indium layer 32 is not limited to the combination of the bent portions, and as shown in FIG.
It may be a wavy pattern having b, or a pattern in which a bent portion and a curved portion are combined.

On the other hand, in the above-described embodiment and various modified examples, the indium layer 32 has a shape having a constant width. However, in the portion extending along the linear portion of the sealing surface 11a, the width is different. It may be a shape having a portion and a side edge having irregularities.

For example, each side edge of the indium layer 32 is
FIG. 9A shows a rectangular convex portion 40 shown in FIG.
A configuration in which arc-shaped convex portions 40 as shown in (b) are provided apart from each other along the longitudinal direction of the indium layer may be adopted.

In this case, as shown in FIGS. 9A and 9B, the convex portions 4 provided on one side edge of the indium layer 32 are formed.
9 and 9 may be arranged so as to overlap with each other in the longitudinal direction of the indium layer with respect to the convex portions 40 and 41 provided on the other side edge, or alternatively, as shown in FIGS.
As shown in (d), they may be arranged shifted from each other in the longitudinal direction of the indium layer.

Even when such an indium layer 32 is used, the flow when the indium is melted can be suppressed. In addition, the shape of the convex portion is not limited to a rectangular shape and an arc shape, and can be arbitrarily selected. In addition, if the convex portion is provided on at least one side edge of the indium layer 32, the effect of suppressing the flow of indium can be obtained.

In the above-described embodiment, the underlayer is formed on the sealing surface, and the indium layer is formed thereon. However, the indium layer is directly formed on the sealing surface without using the underlayer. May be filled. Also in this case, by providing the above-described bent portion or curved portion in the indium layer, or by forming a side edge shape having irregularities, the flow of indium is suppressed, and the same operation as the above-described embodiment is performed. The effect can be obtained.

On the other hand, in the above-described embodiment, the sealing is performed in a state where the underlayer 31 and the indium layer 32 are formed only on the sealing surface 11a of the front substrate 11.
8 or only the sealing surface 11a of the front substrate 11 and the sealing surface 1 of the side wall 18 as shown in FIG.
The sealing may be performed in a state where the base layer 31 and the indium layer 32 are formed on both the substrate 8a and the substrate 8a.

In addition, the present invention is not limited to the above-described embodiment, but can be variously modified within the scope of the present invention. For example, the space between the rear substrate and the side wall may be sealed by a sealing layer in which the underlayer 31 and the indium layer 32 are fused as described above. Alternatively, one peripheral portion of the front substrate or the back substrate may be formed by bending, and these substrates may be directly joined without interposing a side wall.

In the above-described embodiment, a field emission type electron-emitting device is used as the electron-emitting device. However, the present invention is not limited to this. May be used. The present invention is also applicable to other image display devices such as a plasma display panel (PDP) and electroluminescence (EL).

[0057]

As described above in detail, according to the present invention, the flow of the metal sealing material can be suppressed, the sealing can be easily performed in a vacuum atmosphere, and the airtightness and the sealing strength can be improved. It is possible to provide a high image display device and a manufacturing method thereof.

[Brief description of the drawings]

FIG. 1 is a perspective view showing an FED according to an embodiment of the present invention.

FIG. 2 is a sectional view taken along the line AA of FIG. 1;

FIG. 3 is a plan view showing a phosphor screen of the FED.

FIG. 4 is a plan view showing a state in which a base layer and an indium layer are formed on a sealing surface of a front substrate constituting the vacuum envelope of the FED, and a plan view showing an enlarged pattern of the indium layer.

FIG. 5 is a perspective view showing a state in which a base layer and an indium layer are formed on a sealing surface of the front substrate.

FIG. 6 is a cross-sectional view showing a state in which a front substrate on which a base layer and an indium layer are formed on the sealing portion and a rear assembly are opposed to each other.

FIG. 7 is a view schematically showing a vacuum processing apparatus used for manufacturing the FED.

FIG. 8 is a plan view schematically showing a deformation pattern of an indium layer provided in the sealing portion.

FIG. 9 is a plan view schematically showing a deformation pattern of an indium layer provided in the sealing portion.

FIG. 10 is a sectional view showing a state in which a base layer and an indium layer are formed on a sealing surface of a front substrate in a step of forming a vacuum envelope of an FED according to another embodiment of the present invention.

[Explanation of symbols]

 DESCRIPTION OF SYMBOLS 10 ... Vacuum envelope 11 ... Front substrate 11a ... Sealing surface 12 ... Back substrate 14 ... Support member 16 ... Phosphor screen 18 ... Side wall 18a ... Sealing surface 22 ... Electron emission element 30 ... Low melting point glass 31 ... Underlayer 32 indium layer 32a bent portion 32b curved portion 40, 41 convex portion 100 vacuum processing device

 ──────────────────────────────────────────────────続 き Continued on the front page F term (reference) 5C012 AA05 BC03 5C032 AA01 BB18 5C036 EE14 EE17 EF01 EF06 EF09 EG05 EG06 EH01 EH26

Claims (23)

[Claims] An envelope having a back substrate, a front substrate disposed opposite to the back substrate, and directly or indirectly sealed to the back substrate by a metal sealing material, A plurality of image display elements provided inside the container, wherein the metal sealing material is provided on a sealing surface between the rear substrate and the front substrate, and extends over the entire circumference of the sealing surface. While forming a metal sealing material layer extending and extending, the metal sealing material layer has a bent portion or a curved portion in at least a part of a portion extending along a linear portion of the sealing surface. An image display device comprising: 2. The image display device according to claim 1, wherein said bent portion is formed at an acute angle. 3. The image display device according to claim 1, wherein said bent portion is formed substantially at a right angle. 4. The metal sealing material layer is formed to have a substantially constant width, and at a portion extending along a linear portion of the sealing surface,
The image display device according to claim 1, wherein the image display device is formed in a sawtooth shape. 5. The metal sealing material layer is formed to have a substantially constant width, and at a portion extending along a linear portion of the sealing surface,
The image display device according to claim 1, wherein the image display device is formed in a plurality of continuous crank shapes. 6. The metal sealing material layer is formed to have a substantially constant width, and at a portion extending along a linear portion of the sealing surface,
The image display device according to claim 1, wherein the image display device is formed in a continuous ramen structure pattern. 7. The metal sealing material layer is formed to have a substantially constant width, and at a portion extending along a linear portion of the sealing surface,
The image display device according to claim 1, wherein the image display device is formed in a wavy shape. 8. An envelope having a rear substrate, a front substrate disposed to face the rear substrate, and directly or indirectly sealed to the rear substrate by a metal sealing material, A plurality of image display elements provided inside the container, wherein the metal sealing material is provided on a sealing surface between the rear substrate and the front substrate, and extends over the entire circumference of the sealing surface. Forming a metal sealing material layer extending along, the metal sealing material layer has a side edge having irregularities in at least a part of a portion extending along a linear portion of the sealing surface. An image display device comprising: 9. The image display according to claim 8, wherein the metal sealing material layer has portions having different widths in a portion extending along a linear portion of the sealing surface. apparatus. 10. The metal sealing material layer has a pair of side edges extending along a linear portion of the sealing surface, and at least one side edge has a plurality of protrusions located apart from each other. The image display device according to claim 9, further comprising: 11. The metal sealing material layer has a pair of side edges extending along a straight portion of the sealing surface, and each side edge has a plurality of convex portions spaced apart from each other. The image display device according to claim 9, wherein: 12. A projection provided on one side edge of the metal sealing material layer is shifted from the projection provided on the other side edge in the longitudinal direction of the metal sealing material layer. The image display device according to claim 11, wherein the image display device is arranged. 13. A projection provided on one side edge of the metal sealing material layer is arranged at a position facing each of the projections provided on the other side edge. Item 1
2. The image display device according to 1. 14. The image display device according to claim 1, wherein the metal sealing material layer is formed of a low melting point metal material having a melting point of 350 ° C. or less. 15. The image display device according to claim 14, wherein said low melting point metal material is indium or an alloy containing indium. 16. The semiconductor device according to claim 16, further comprising an underlayer provided on said sealing surface and different from said metal sealing material layer, wherein said metal sealing material layer is provided so as to overlap said underlayer. 16. The image display device according to any one of 1 to 15. 17. The method according to claim 17, wherein the underlayer is silver, gold, aluminum,
2. A metal paste containing at least one of nickel, cobalt, and copper.
7. The image display device according to 6. 18. The method according to claim 18, wherein the underlayer is made of silver, gold, aluminum,
18. The image display device according to claim 17, wherein the image display device is formed of a metal plating layer or a deposition film containing at least one of nickel, cobalt, and copper, or a glass material. 19. An envelope having a back substrate, a front substrate disposed opposite to the back substrate and sealed directly or indirectly to the back substrate with a metal sealing material, and the front substrate A phosphor screen formed on the inner surface of the substrate, and an electron emission source provided on the rear substrate, for emitting an electron beam to the phosphor screen to emit light from the phosphor screen. A metal sealing material layer is provided on a sealing surface between the rear substrate and the front substrate, and extends over the entire circumference of the sealing surface, and the metal sealing material layer is An image display device comprising a bent portion or a curved portion in at least a part of a portion extending along a linear portion of a sealing surface. 20. An envelope having a rear substrate, a front substrate disposed opposite to the rear substrate, and directly or indirectly sealed to the rear substrate by a metal sealing material; A plurality of image display elements provided inside the container, a method for manufacturing an image display device comprising: a metal sealing material is filled in a sealing surface between the rear substrate and the front substrate; A step of forming a metal sealing material layer extending over the entire periphery of the mounting surface, and after filling the metal sealing material, heat and melt the metal sealing material in a vacuum atmosphere to form the back substrate and A step of directly or indirectly sealing the front substrate with the sealing surface,
In the step of filling the metal sealing material, a bent portion or a curved portion is formed in at least a part of a portion of the metal sealing material layer extending along a linear portion of the sealing surface. A method for manufacturing an image display device, comprising: 21. An envelope having a back substrate, a front substrate disposed opposite to the back substrate, and directly or indirectly sealed to the back substrate by a metal sealing material; A plurality of image display elements provided inside the container, a method for manufacturing an image display device comprising: a metal sealing material is filled in a sealing surface between the rear substrate and the front substrate; A step of forming a metal sealing material layer extending over the entire periphery of the mounting surface, and after filling the metal sealing material, heat and melt the metal sealing material in a vacuum atmosphere to form the back substrate and A step of directly or indirectly sealing the front substrate with the sealing surface,
In the step of filling the metal sealing material, at least a part of the metal sealing material layer extending along the linear portion of the sealing surface forms a side edge having irregularities. A method of manufacturing an image display device, characterized by filling the above-mentioned metal sealing material. 22. The method according to claim 20, wherein the metal sealing material layer is formed of a low melting point metal material having a melting point of 350 ° C. or less. 23. The method according to claim 22, wherein the low melting point metal material is indium or an alloy containing indium.