JP2011082583A - Semiconductor device and method of manufacturing the same - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To provide a semiconductor device which has a light receiving surface opposite to a surface provided with an external electrode and allows it be miniaturized. <P>SOLUTION: A die pad 9B made of metal is formed on a metal plate 91 which has flexibility, and a semiconductor element 2B is mounted on the die pad 9B. Bumps 5B are stacked and formed in a plurality of stages on a terminal 22B of the semiconductor element 2B, and the whole is sealed with a resin seal 92. An upper surface of the resin seal 92 is polished until the bump 5B appears to form the external electrode 6B. The metal plate 91 is peeled from the resin seal 92, and dicing is then performed. <P>COPYRIGHT: (C)2011,JPO&INPIT

Description

  The present invention relates to a semiconductor device in which a semiconductor element is sealed with a resin and a method for manufacturing the same.

  An optical semiconductor device in which an electrode terminal is provided on the surface opposite to the light receiving surface is known as a prior art (for example, Patent Document 1). Further, a semiconductor device in which a semiconductor element is connected to an external electrode by flip chip connection is known as a conventional technique (for example, Patent Document 2).

JP 2007-5687 A JP 2006-278914 A

  In the conventional optical semiconductor device as described in Patent Document 1, since wiring is performed by wire bonding, a wire connected to a terminal on the upper surface of the semiconductor element draws a loop, and then a terminal electrode on the lower surface side of the semiconductor element Connect with. For this reason, there exists a problem that an optical semiconductor device becomes large. In the semiconductor device described in Patent Document 2, the heat generated from the semiconductor element is radiated through the bumps, so that there is a problem that the heat radiation efficiency is poor.

(1) The invention of claim 1 is a semiconductor device in which a semiconductor element is resin-sealed, and is provided on the resin surface on one surface side of the semiconductor element, and the semiconductor element is interposed through bumps formed in a plurality of layers. A terminal electrode is connected and an external electrode exposed on the surface and a die pad made of a metal plate connected to the other surface of the semiconductor element and exposed on the surface are provided.
(2) The invention of claim 2 is the semiconductor device according to claim 1, wherein the resin surface and the upper surface of the uppermost bump are polished surfaces, and the external electrode extends over the bump polished surface and the resin polished surface. It is characterized by being formed.
(3) A method of manufacturing a semiconductor device according to claim 3 includes a die pad forming step of forming a metal die pad on a flexible plate, a semiconductor element mounting step of mounting a semiconductor element on the die pad, A bump forming step of forming a plurality of bumps on a semiconductor element mounted on a die pad, and a resin sealing step of producing a resin sealing body by resin sealing the semiconductor element, the bump, and the die pad; Among the bumps formed in multiple layers, a polishing step for polishing the resin sealing body until the uppermost bump appears on the surface, and an external electrode connected to the bump is formed on the polishing surface of the resin sealing body. It comprises an external electrode forming step, a peeling step for peeling the flexible plate from the resin sealing body, and a dividing step for cutting and dividing the resin sealing body.
(4) According to a fourth aspect of the present invention, in the semiconductor device manufacturing method according to the third aspect, in the bump forming step, bumps formed in a plurality of stages are formed by wire bonding. Device manufacturing method.

  According to the first aspect of the present invention, the heat generated from the semiconductor element joined to the electrode by the bump can be efficiently radiated. According to the invention of claim 3, the semiconductor device of claim 1 can be easily manufactured.

It is a figure for demonstrating the structure of the semiconductor device of reference embodiment of this invention. It is a figure for demonstrating an internal electrode formation process. It is a figure for demonstrating mounting to the internal electrode of a photon detection semiconductor element. It is a figure for demonstrating a photon detection semiconductor element mounting process, a wiring process, a resin sealing process, and a grinding | polishing process. It is a figure for demonstrating an external electrode formation process and a division | segmentation process. It is a figure for demonstrating the photon detection semiconductor device mounted in the circuit board. It is a figure for demonstrating the structure of the semiconductor device of the 1st Embodiment of this invention. It is a figure for demonstrating a die pad formation process. It is a figure for demonstrating a semiconductor element mounting process, a bump formation process, a resin sealing process, and a grinding | polishing process. It is a figure for demonstrating an external electrode formation process, a peeling process, and a division | segmentation process. It is a figure for demonstrating the semiconductor device mounted in the circuit board. It is a figure for demonstrating the semiconductor device which provided the metal plate as a heat sink.

-Reference embodiment-
A semiconductor device according to a reference embodiment of the present invention will be described with reference to FIG. The semiconductor device of the first embodiment is a photodetection semiconductor device, and FIG. 1 is a diagram for explaining the configuration of the photodetection semiconductor device 1A.

  In FIG. 1, reference numeral 1A denotes a light detection semiconductor device, and 2A denotes a light detection semiconductor element. The light detection semiconductor element 2A is provided with a light detection unit 21A. The light detection semiconductor device 1 has an opening (hereinafter referred to as a light receiving opening 11A), and the light detection portion 21A of the light detection semiconductor element 2A is exposed on the bottom surface of the light receiving opening 11A. A glass substrate 3A is provided on the light receiving opening 11A side of the photodetection semiconductor device 1A, and the light receiving opening 11A is covered with the glass substrate 3A. The light detection semiconductor device 1A receives and detects light such as a laser beam incident on the light receiving opening 11A through the glass substrate 3A by the light detection unit 21A.

  An internal electrode 4A is provided on the resin surface of the resin 8A on the glass substrate 3A side, and the photodetecting semiconductor element 2A is connected to the internal electrode 4A by a bump 5A made of Au or the like. An external electrode 6A is provided on a resin surface of a surface (hereinafter referred to as a mounting surface) opposite to a surface (hereinafter referred to as a light receiving surface) on the light receiving opening 11A side of the photodetection semiconductor device 1A. The internal electrode 4A and the external electrode 6A are connected by a substantially straight wire 7A. The light detection semiconductor element 2A, the internal electrode 4A, the bump 5A, and the wire 7A are sealed with a resin 8A such as an epoxy resin.

  With the above structure, the circuit board can be connected via the external electrode 6A on the mounting surface, which is the surface opposite to the light receiving surface.

  Next, a method for manufacturing the above-described photodetection semiconductor device 1A will be described with reference to FIGS. The manufacturing method of the photodetection semiconductor device 1A includes an internal electrode formation step, a photodetection semiconductor element mounting step, a wiring step, a resin sealing step, a polishing step, an external electrode formation step, and a division step.

(1) Internal electrode formation process In the internal electrode formation process, the internal electrode 4A of the photodetection semiconductor device 1A is formed. The internal electrode forming process will be described with reference to FIG.

  As shown in FIG. 2A, after the Au paste 42 is applied to the entire surface of both surfaces of the glass substrate 41, a resist 43 is applied or laminated on the application surface of the Au paste 42. Next, the pattern mask film is brought into close contact and exposed to ultraviolet rays. Then, development is performed, and as shown in FIG. 2B, the resist 43 is removed by etching, leaving portions for forming the internal electrode 4A and a dummy electrode 44 described later. Since no electrode is formed on one surface of the glass substrate 41, the entire resist 43 is removed.

  Next, as shown in FIG. 2C, the portion of the Au paste 42 not covered with the resist 43 is removed by etching. Then, after the resist 42 is peeled off from the glass substrate 41, the Au paste 42 is baked by heat treatment, thereby forming the internal electrode 4A and the dummy electrode 44 on the glass substrate 41 as shown in FIG. .

(2) Photodetection semiconductor element mounting step In the photodetection semiconductor element mounting step, the photodetection semiconductor element 2A is flip-chip connected to the internal electrode 4A of the glass substrate 41 by ultrasonic bonding.

  Here, the production of the photodetection semiconductor element 2A will be described. On the wafer used for manufacturing the photodetection semiconductor element 2A, a plurality of photodetection portions 21A are formed in advance as active elements. A predetermined number of bumps 5A are formed on each element on the wafer. The bumps 5A are formed on the wafer by a plating method. Then, the wafer is diced into individual pieces, and the light detection semiconductor element 2 is manufactured.

  The photodetection semiconductor element mounting process will be described with reference to FIGS. 3 and 4A. An anisotropic conductive paste (ACP) 45 is applied in a frame shape at a position along the outer periphery of the light detection semiconductor element 2A at a position on the glass substrate 41 where the light detection semiconductor element 2A is mounted. At this time, as shown in FIG. 3A, an anisotropic conductive paste 45 is applied on the internal electrode 4A. Next, as shown in FIG. 3B, the photodetection semiconductor element 2A is mounted on the glass substrate 41 so that the bump 5A is placed on the internal electrode 4A, and the bonding tool 51 is attached to the photodetection semiconductor element 2A. Hit it. Then, the photodetection semiconductor element 2 </ b> A is pressurized and heated with the bonding tool 51. As a result, the bump 5A and the internal electrode 4A are electrically connected, and the anisotropic conductive paste 45 is cured (FIG. 4A).

(3) Wiring process In the wiring process, the wire 7A of the photodetection semiconductor device 1A is formed. A wire bonding technique is used to form the wire 7A. For example, a case where the wire 7A is formed by a nail head bonding method will be described. An Au wire is used as the wire 7A. (I) The Au wire is passed through the capillary and the tip of the Au wire is melted to form a ball.
(Ii) The ball is crimped onto the internal electrode 4A. Thereby, a nail head is formed on the internal electrode 4A.
(Iii) After moving the capillary so that the loop height of the Au wire is higher than the height of the upper surface of the photodetecting semiconductor element 2A, the Au wire is crimped onto the dummy electrode 44 at the edge of the capillary. The loop height of the Au wire can also be adjusted by the length of the recrystallized portion formed when the Au wire tip is melted to form a ball.
(Iv) Pull the Au wire with a clamper and cut it.
As described above, as shown in FIG. 4B, the wire 7A connecting the internal electrode 4A and the dummy electrode 44 having a loop height higher than the height of the upper surface of the photodetecting semiconductor element 2A is formed.

(4) Resin sealing step In the resin sealing step, the photodetection semiconductor element 2A and the like are sealed with resin. For the resin 8A for resin sealing, for example, a thermosetting epoxy resin is used. Since the anisotropic conductive paste 45 is applied to the outer periphery of the light detection semiconductor element 2A, the resin 8A does not flow between the light detection semiconductor element 2A and the glass substrate 41. For this reason, as shown in FIG. 4C, the space 61 around the light detection portion 21A is not filled with the sealing resin, and the light detection portion 21A is not covered with the sealing resin 8A. Then, the resin-sealed glass plate 41 is put in an oven (not shown) and heat-treated to cure the resin 8A. Hereinafter, the cured resin 8A shown in FIG.

(5) Polishing Step In the polishing step, the surface 63 of the resin sealing body 62 opposite to the surface on which the glass substrate 41 is provided (hereinafter referred to as the upper surface) is polished to obtain the resin sealing body. The upper surface of 62 is shaved. As described above, since the loop height of the wire 7A is higher than the height of the upper surface of the photodetection semiconductor element 2A, when the upper surface of the resin sealing body 62 is polished, before the photodetection semiconductor element 2A appears on the polishing surface 65, Wire 7A appears. When further polished, the wire 7A is divided into a wire 7A connected to the internal electrode 4A and a wire 64 connected to the dummy electrode 44, as shown in FIG. In the division step described later, the dummy electrode 44 and the wire 64 are separated from the photodetection semiconductor device 1A. Therefore, taking into account the division allowance, the resin sealing body 62 is polished to a position where the distance between the polishing ends of the two divided wires 7A, 64 is a predetermined distance or more. By adjusting the loop height of the wire 7A, the photodetecting semiconductor element 2A is prevented from being polished even if the resin sealing body 62 is polished to the above-described position.

(6) External Electrode Formation Step In the external electrode formation step, the external electrode 6A connected to the wire 7A is formed on the polishing surface 65 of the resin sealing body 62. The external electrode 6A is formed as follows.
(I) A slit mask (a mask produced by forming a hole in a metal plate) is attached to the polishing surface 65 of the resin sealing body 62.
(Ii) A metal electrode such as Ti or Pd is formed on the polishing surface 65 of the resin sealing body 62 by sputtering.
(Iii) After removing the slit mask from the polishing surface 65 of the resin sealing body 62, a Ni layer is formed on the metal electrode by a plating method, and an Au layer is formed thereon by a plating method. Thereby, the adhesive strength of the electrode is increased.
As described above, the external electrode 6A is formed on the polishing surface 65 of the resin sealing body 62 as shown in FIG.

(7) Division Step In the division step, the resin sealing body 62 is divided to produce the photodetection semiconductor device 1A. In the dividing step, as shown in FIG. 5B, the resin sealing body 62 is diced along the one-dot chain line 71 by the diamond blade dicing method. Then, as shown in FIG. 5C, one resin sealing body 62 is divided, and the photodetection semiconductor device 1A is completed.

  The photodetection semiconductor device 1 manufactured as described above is mounted on a circuit board 81 as shown in FIG. For example, the laser beam LB irradiated for reading information on the optical disk is reflected by the optical disk surface, passes through the glass substrate 3A, and enters the light receiving opening 11A of the light detection semiconductor device 1A. The laser beam LB incident on the light receiving opening 11A is received and detected by the light detection unit 21A of the light detection semiconductor element 2A.

The photodetection semiconductor device 1A according to the above embodiment has the following operational effects.
(1) Provided on the resin surface on one surface side of the semiconductor element 2A, provided on the resin surface on the other surface side of the semiconductor element, an internal electrode to which the terminal electrode of the semiconductor element is connected via a bump, The internal electrode is connected via a wire, and an external electrode exposed on the surface is provided. Therefore, the photodetection semiconductor device 1A having the light receiving surface on the surface opposite to the surface on which the external electrode 6A is provided can be reduced in size.

(2) The wire 7A is connected to the internal electrode 4A by a nail head bonding method in which even a small electrode can be connected. Therefore, the internal electrode 4A can be reduced, and the photodetection semiconductor device 1A can be reduced in size.

(3) The internal electrode 4A is formed, the photodetection semiconductor element 2A is flip-chip connected to the internal electrode 4A, and the wire 7A is connected to the internal electrode 4A so that the loop height is higher than the height of the photodetection semiconductor element 2A. Bonded. Then, the photodetection semiconductor element 2A, the internal electrode 4A, and the wire 7A are resin-sealed, and the resin sealing body 62 is shaved until the wire 7A is divided into two, and the surface of the resin sealing body 62 is shaved. The external electrode 6A connected to the wire 7A connected to the internal electrode 4A among the divided wires 7A was formed on the (polished surface 65). Further, the resin sealing body 62 on which the external electrode 6A is formed is cut and divided so as to remove the wire 64 that is not connected to the internal electrode 4A among the divided wires 7A, thereby manufacturing the photodetecting semiconductor device 1A. . Therefore, the photodetection semiconductor device 1A that can be miniaturized can be easily manufactured.

(4) When the internal electrode 4A is formed, the dummy electrode 44 is further formed, and the internal electrode 4A and the dummy electrode 44 are wire-bonded with the wire 7A so that the loop height is higher than the height of the light detection semiconductor element 2A. I did it. Since the end of the wire 7A that is not connected to the internal electrode 4A is also firmly fixed, it is possible to prevent the wire 7A from moving when the resin is sealed in the resin sealing step.

The photodetection semiconductor device 1A of the above embodiment can be modified as follows.
(1) Although the glass substrate 3A is used as a substrate that covers the light receiving opening 11A, the substrate is not limited to the glass substrate 3A as long as it is a substrate that transmits light to be detected. For example, a plastic substrate may be used.

(2) Although the internal electrode 4A and the wire 7A are connected by the nail head bonding method, they may be connected by the wedge bonding method that can also adjust the loop height of the wire 7A.

(3) An internal electrode provided on the resin surface on one surface side of the semiconductor element, to which the terminal electrode of the semiconductor element is connected via a bump, and provided on the resin surface on the other surface side of the semiconductor element, The semiconductor device is not limited to the photodetection semiconductor device as long as the semiconductor device includes an external electrode that is connected to the internal electrode and exposed to the surface.

(4) The resin 8A is not limited to an epoxy resin.

(5) Although the metal electrode is formed on the polished surface 65 by sputtering, it may be formed by vapor deposition. Further, the material of the metal electrode is not limited to Ti or Pd. The metal layer formed by plating on the metal electrode is not limited to the Ni layer. For example, a Cu layer may be formed instead of the Ni layer.

-First embodiment-
A semiconductor device according to a first embodiment of the present invention will be described with reference to FIG. FIG. 7 is a diagram for explaining the configuration of the semiconductor device 1B.

  As shown in FIG. 7, a semiconductor device 1B is obtained by sealing a semiconductor element 2B with a resin 8B. The semiconductor device 1B includes an external electrode 6B on one surface and a die pad 9B on the other surface. . The external electrode 6B and the terminal 22B of the semiconductor element 2B are connected via the bump 5B. The semiconductor element 2B is die-bonded on the back surface of the open surface of the die pad 9B.

  Next, a method for manufacturing the above-described semiconductor device 1B will be described with reference to FIGS. The manufacturing method of the semiconductor device 1B includes a die pad forming process, a semiconductor element mounting process, a bump forming process, a resin sealing process, a polishing process, an external electrode forming process, a peeling process, and a dividing process.

(1) Die Pad Forming Step In the die pad forming step, the die pad 9B of the semiconductor device 1B is formed. The die pad forming process will be described with reference to FIG.

  As shown in FIG. 8A, a resist 42 is applied or laminated on both surfaces of the metal plate 91. As the metal plate 91, a flexible metal thin plate such as a flat JIS stainless steel plate or a Cu plate having a thickness of about 0.1 mm is used. Next, an acrylic film-based pattern mask film is brought into intimate contact and exposed to ultraviolet rays. Then, development is performed, and as shown in FIG. 8B, the resist 42 in the portion where the die pad 9B is formed is removed. Since no electrode is formed on one surface of the metal plate 91, the entire surface remains covered with the resist 42.

  Next, the die plate 9B is formed as shown in FIG. 8C by immersing the metal plate 41 in an Au plating solution and forming an Au layer on the portion of the metal plate 41 not covered with the resist 42 by plating. To do. Then, as shown in FIG. 8D, the resist 42 is peeled from the metal plate 91.

(2) Semiconductor Element Mounting Step In the semiconductor element mounting step, a die bonding material (not shown) is applied on the die pad 9B, and the semiconductor element 2B is mounted thereon (FIG. 9A).

(3) Bump formation process In a bump formation process, bump 5B is formed on terminal 22B of semiconductor element 2B mounted on die pad 9B. A wire bonding technique is used for forming the bumps 5B. For example, a case where the bump 5B is formed by a nail head bonding method will be described. Au wires are used for the bumps 5B.
(I) The Au wire is passed through the capillary and the tip of the Au wire is melted to form a ball.
(Ii) The ball is crimped onto the terminal 22B of the semiconductor element 2B.
(Iii) The Au wire is pulled with a clamper and cut to form bumps.
(Iv) The Au wire is passed through the capillary and the tip of the Au wire is melted to form a ball. (V) Crimp the ball onto the bump.
(Vi) Pull the Au wire with a clamper and cut it.
As described above, as shown in FIG. 9B, a bump 5B in which two bumps are overlapped is formed on the terminal 22B of the semiconductor element 2B.

(4) Resin sealing process In the resin sealing process, as shown in FIG.9 (c), the semiconductor element 2B in which the bump 5B was formed is resin-sealed. As the resin 8B, a thermosetting epoxy resin or the like is used as in the first embodiment. Hereinafter, the cured resin 8B shown in FIG.

(5) Polishing Step In the polishing step, the surface of the resin sealing body 92 that is opposite to the surface on which the die pad 9B is provided (hereinafter referred to as the upper surface) is polished. Sharpen the top surface. As shown in FIG. 9D, the bump 5B appears on the polishing surface 93, and the resin sealing body 92 is polished until a part of the bump 5B is scraped.

(6) External Electrode Forming Step In the external electrode forming step, the external electrode 6B for connecting to the bump 5B is formed on the polishing surface 93 of the resin sealing body 92. The external electrode 6B is formed by sputtering and plating as in the first embodiment (FIG. 10A).

(7) Peeling Step In the peeling step, the metal plate 91 is peeled from the resin sealing body 92 as shown in FIG. As described above, since the metal plate 91 has flexibility, it can be easily removed.

(8) Division Step In the division step, the resin sealing body 92 from which the metal plate 91 has been peeled is divided to produce the semiconductor device 1B. In the dividing step, as shown in FIG. 10C, the resin sealing body 92 is diced along the one-dot chain line 94 by the diamond blade dicing method. Then, as shown in FIG. 10D, one resin sealing body 92 is divided, and the semiconductor device 1B is completed.

  The external electrode 6B of the semiconductor device 1B manufactured as described above is mounted via the electrode 96 and the solder 97 of the circuit board 95 as shown in FIG. On the other hand, the die pad 9 </ b> B of the semiconductor device 1 </ b> B is connected to the heat sink 98 covered with the circuit board 95 via the solder 99. By doing so, the heat generated in the semiconductor element 2 is quickly conducted by the heat radiating plate 98 and radiated.

The semiconductor device 1B according to the above embodiment has the following operational effects.
(1) Provided on the resin surface on one surface side of the semiconductor element 2B, the terminal 22B of the semiconductor element 2B is connected via the bump 5B, the external electrode 6B exposed on the surface, and the other surface of the semiconductor element 2B are The die pad 9B is connected and exposed on the surface. Therefore, the heat generated by the semiconductor element 2B joined to the external electrode 6B by the bump 5B can be efficiently radiated.

(2) The terminal 22B of the semiconductor element 2B and the external electrode 6B are connected via two bumps 5B. Thereby, since the distance between the polishing surface 93 and the semiconductor element 2B can be increased, it is possible to prevent the semiconductor element 2B from being polished due to excessive grinding in the polishing process.

(3) The die pad 9B was formed on the flexible metal plate 91, the semiconductor element 2B was mounted on the die pad 9B, and the bumps 5B were formed on the semiconductor element 2B mounted on the die pad 9B. Then, the semiconductor element 2B, the bump 5B, and the die pad 9B are resin-sealed to produce a resin sealing body 92. The bump 5B appears on the surface, and the resin sealing body 92 is removed until a part of the bump 5B is scraped. Shaved. Further, external electrodes 6B connected to the bumps 5B are formed on the shaving surface (polishing surface 93) of the resin sealing body 92, the metal plate 91 is peeled from the resin sealing body 92, and the resin sealing body 92 is cut. Thus, the semiconductor device 2B is manufactured. Therefore, the semiconductor device 2B excellent in heat dissipation of the semiconductor element 2B can be easily manufactured.

The semiconductor device 1B of the above embodiment can be modified as follows.
(1) Although the metal plate 91 is peeled off from the resin sealing body 92, the resin sealing body 92 may be divided as it is without peeling off the metal plate 91. As shown in FIG. 12, the metal plate 91 serves as a heat radiating plate for the semiconductor element 2B, and heat can be radiated over the entire surface of the semiconductor device 1C on the die pad 9B side.

(2) The number of bumps formed on the semiconductor element 2B mounted on the die pad 9B is not limited to two, and can be selected as appropriate depending on the thickness of the semiconductor device 2B and the cutting accuracy of cutting the resin sealing body 92. When the thickness of the semiconductor device 2B is increased, the number of bumps to be stacked is increased, and when the thickness is decreased, the number of bumps to be stacked is decreased. Further, when the shaving accuracy for shaving the resin sealing body 92 is poor, the number of bumps to be stacked is increased in order to prevent the semiconductor element 2B from being shaved.

(3) The resin 8B is not limited to an epoxy resin.

(4) Although the metal electrode is formed on the polished surface 93 by sputtering, it may be formed by vapor deposition. Further, the material of the metal electrode is not limited to Ti or Pd. The metal formed by plating on the metal electrode is not limited to the Ni layer. For example, a Cu layer may be formed instead of the Ni layer.

  The above description is merely an example, and the present invention is not limited to the above embodiment.

DESCRIPTION OF SYMBOLS 1A Photodetection semiconductor device 1B, 1C Semiconductor device 2A Photodetection semiconductor element 2B Semiconductor element 3A, 41 Glass substrate 4A Internal electrode 5A, 5B Bump 6A, 6B External electrode 7A Wire 8A, 8B Resin 9B Die pad 11A Light reception opening 21A Photodetection part 22B Terminal 44 Dummy electrode 45 Anisotropic conductive paste 62, 92 Resin sealing body 91 Metal plate

Claims (4)

In a semiconductor device in which a semiconductor element is resin-sealed,
An external electrode provided on the resin surface on one side of the semiconductor element, connected to the terminal electrode of the semiconductor element via a bump formed in a plurality of layers, and exposed on the surface;
A semiconductor device comprising: a die pad connected to the other surface of the semiconductor element and exposed on the surface. The semiconductor device according to claim 1,
The semiconductor surface, wherein the resin surface and the upper surface of the uppermost bump are polished surfaces, and the external electrodes are formed across the bump polished surface and the resin polished surface. A die pad forming step of forming a metal die pad on a flexible plate;
A semiconductor element mounting step of mounting a semiconductor element on the die pad;
A bump forming step of forming a plurality of bumps on the semiconductor element mounted on the die pad;
A resin sealing step of resin-sealing the semiconductor element, the bump, and the die pad to produce a resin sealing body;
Among the bumps formed to overlap the plurality of steps, a polishing step of polishing the resin sealing body until the uppermost bump appears on the surface;
External electrode forming step of forming external electrodes connected to the bumps on the polished surface of the resin sealing body,
A peeling step of peeling the flexible plate from the resin sealing body;
A method for manufacturing a semiconductor device, comprising: a dividing step of cutting and dividing the resin sealing body. In the manufacturing method of the semiconductor device according to claim 3,
The method of manufacturing a semiconductor device, wherein the bump forming step includes forming a bump formed by overlapping the plurality of steps by a wire bonding method.

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