JP4273346B2 - Manufacturing method of semiconductor device - Google Patents

Description

  The present invention relates to a method for manufacturing a semiconductor device.

  In order to pursue miniaturization of a semiconductor device, it is known to grind a semiconductor wafer. For example, in a technique for manufacturing a package of a semiconductor device at a wafer level (wafer level package), a process of grinding a back surface of a semiconductor wafer is performed after providing a resin layer, wiring, protruding electrodes, and the like on the surface of the semiconductor wafer. By the way, a resin layer, a wiring, a protruding electrode, or the like is not provided at an outer peripheral end portion that is not a product of a semiconductor wafer, and the outer peripheral end portion is relatively thinner than a central portion that is a product. For this reason, during grinding, the outer peripheral edge of the semiconductor wafer may be warped downward due to stress applied by grinding, and it has been difficult to grind the semiconductor wafer to approximately the same thickness.

  An object of the present invention is to improve productivity and yield and to grind semiconductor substrates to substantially the same thickness.

(1) In the method of manufacturing a semiconductor device according to the present invention, a protrusion protruding above the first region is formed on a semiconductor substrate having a first region and a second region around the first region. Form the
The portion that overlaps the second region is provided with a thicker support than the portion that overlaps the first region on the surface of the semiconductor substrate on which the convex portions are formed,
Grinding the semiconductor substrate from a surface opposite to the surface on which the convex portions of the semiconductor substrate are formed.

  According to the present invention, the grinding step is performed with the support provided on the semiconductor substrate. In the support, the portion overlapping the second region is thicker than the portion overlapping the first region. Therefore, the portion corresponding to the second region of the semiconductor substrate is more than the portion corresponding to the first region due to the convex portion. Even if the thickness of the semiconductor substrate is reduced, the semiconductor substrate can be prevented from warping due to stress caused by grinding. Therefore, the semiconductor substrate can be ground to have substantially the same thickness.

(2) In the method for manufacturing a semiconductor device according to the present invention, a resin layer is provided in the first region of a semiconductor substrate having a first region and a second region around the first region,
The portion that overlaps the second region is provided with a thicker support than the portion that overlaps the first region on the surface of the semiconductor substrate on which the resin layer is provided,
Grinding the semiconductor substrate from a surface opposite to the surface on which the resin layer of the semiconductor substrate is provided.

  According to the present invention, the grinding step is performed with the support provided on the semiconductor substrate. The portion of the support that overlaps the second region is thicker than the portion that overlaps the first region. Therefore, the portion corresponding to the second region of the semiconductor substrate is more than the portion corresponding to the first region due to the resin layer. Even if the thickness of the semiconductor substrate is reduced, the semiconductor substrate can be prevented from warping due to stress caused by grinding. Therefore, the semiconductor substrate can be ground to have substantially the same thickness.

(3) In the semiconductor device manufacturing method according to the present invention, a resin layer is provided in the first region of a semiconductor substrate having a first region and a second region around the first region,
Protruding electrodes are provided on the resin layer,
The portion that overlaps the second region is provided with a thicker support than the portion that overlaps the first region on the surface of the semiconductor substrate on which the resin layer is provided,
Grinding the semiconductor substrate from a surface opposite to the surface on which the resin layer of the semiconductor substrate is provided.

  According to the present invention, the grinding step is performed with the support provided on the semiconductor substrate. The portion of the support that overlaps the second region is thicker than the portion that overlaps the first region. Therefore, the portion corresponding to the second region of the semiconductor substrate corresponds to the first region by the resin layer and the protruding electrode. Even if it becomes thinner than the portion to be processed, it is possible to prevent the semiconductor substrate from warping due to stress caused by grinding. Therefore, the semiconductor substrate can be ground to have substantially the same thickness.

(4) In this method of manufacturing a semiconductor device,
The second region may be an outer peripheral end portion of the semiconductor substrate.

  Thereby, it is possible to prevent the outer peripheral end portion of the semiconductor substrate from being bent by the stress due to grinding.

(5) In this method of manufacturing a semiconductor device,
In the step of providing the support, the support may be formed by spin-coating a resin on the semiconductor substrate.

  As a result, the support can be easily formed.

(6) In this method of manufacturing a semiconductor device,
The step of providing the support may include forming a raised portion of the resin in the second region.

(7) In this method of manufacturing a semiconductor device,
The step of providing the support may include flattening by pressing the surface of the resin.

(8) In this method of manufacturing a semiconductor device,
The support includes an adhesive sheet having an adhesive layer thicker than the height of the protrusion of the convex portion,
In the step of providing the support, the support may be formed by pressing the semiconductor substrate against the adhesive sheet and discharging at least a part of the adhesive layer to the outside of the convex portion.

(9) In this method of manufacturing a semiconductor device,
The support includes an adhesive sheet having an adhesive layer thicker than the thickness of the resin layer,
In the step of providing the support, the support may be formed by pressing the semiconductor substrate against the adhesive sheet and discharging at least a part of the adhesive layer to the outside of the resin layer.

(10) In this method of manufacturing a semiconductor device,
The support includes an adhesive sheet having an adhesive layer thicker than the sum of the thickness of the resin layer and the thickness of the protruding electrode,
In the step of providing the support, the support is formed by pressing the semiconductor substrate against the adhesive sheet and discharging at least a part of the adhesive layer outside the resin layer and the protruding electrode. May be.

(11) In the method for manufacturing a semiconductor device according to the present invention, a protrusion protruding above the first region is formed on a semiconductor substrate having a first region and a second region around the first region. Form the
A support is provided on the surface of the semiconductor substrate on which the convex portion is formed such that a portion overlapping the first region becomes a through hole,
Grinding the semiconductor substrate from a surface opposite to the surface on which the convex portions of the semiconductor substrate are formed.

  According to the present invention, the grinding step is performed with the support provided on the semiconductor substrate. Since the portion of the support that overlaps the first region is a through hole, even if the portion corresponding to the second region of the semiconductor substrate is thinner than the portion corresponding to the first region by the convex portion. The semiconductor substrate can be prevented from warping due to stress caused by grinding. Therefore, the semiconductor substrate can be ground to have substantially the same thickness.

(12) In the semiconductor device manufacturing method according to the present invention, a resin layer is provided in the first region of the semiconductor substrate having the first region and the second region around the first region,
The support is provided on the surface of the semiconductor substrate on which the resin layer is provided such that a portion overlapping the first region becomes a through hole,
Grinding the semiconductor substrate from a surface opposite to the surface on which the resin layer is provided.

  According to the present invention, the grinding step is performed with the support provided on the semiconductor substrate. Since the portion of the support that overlaps the first region is a through hole, even if the portion corresponding to the second region of the semiconductor substrate is thinner than the portion corresponding to the first region by the resin layer The semiconductor substrate can be prevented from warping due to stress caused by grinding. Therefore, the semiconductor substrate can be ground to have substantially the same thickness.

(13) In the method for manufacturing a semiconductor device according to the present invention, a resin layer is provided in the first region of a semiconductor substrate having a first region and a second region around the first region,
Protruding electrodes are provided on the resin layer,
The support is provided on the surface of the semiconductor substrate on which the resin layer is provided such that a portion overlapping the first region becomes a through hole,
It includes grinding the semiconductor substrate from the surface opposite to the surface on which the resin layer is provided.

  According to the present invention, the grinding step is performed with the support provided on the semiconductor substrate. Since the support has a through hole in the portion overlapping the first region, the portion corresponding to the second region of the semiconductor substrate is thinner than the portion corresponding to the first region by the resin layer and the protruding electrode. Even if it becomes, it can prevent that a semiconductor substrate warps by the stress by grinding. Therefore, the semiconductor substrate can be ground to have substantially the same thickness.

(14) In this method of manufacturing a semiconductor device,
The second region may be an outer peripheral end portion of the semiconductor substrate.

  Thereby, it is possible to prevent the outer peripheral end portion of the semiconductor substrate from being bent by the stress due to grinding.

(15) In this method of manufacturing a semiconductor device,
The support may have a step portion that is formed at a peripheral edge of the through hole and on which an outer peripheral end portion of the semiconductor substrate is disposed.

  Thereby, for example, in the grinding process, the lateral displacement of the semiconductor substrate can be regulated.

(16) In this method of manufacturing a semiconductor device,
The support may be made of a resin.

(17) In this method of manufacturing a semiconductor device,
In the step of providing the support, the resin may be cured.

(18) In this method of manufacturing a semiconductor device,
The first region is an effective chip area in which an integrated circuit is formed and becomes a product,
The second area may be a peripheral chip area that is not a product.

(19) In this method of manufacturing a semiconductor device,
After the step of grinding the semiconductor substrate, the semiconductor substrate may be cut while the support is provided on the semiconductor substrate.

(20) In this method of manufacturing a semiconductor device,
The support may be removed from the semiconductor substrate after the step of grinding the semiconductor substrate.

(21) A method of manufacturing a semiconductor device according to the present invention includes: a first region in which an integrated circuit is formed and serving as a product; and a second substrate that is not a product around the first region. And providing a resin layer in the first region and the second region,
Above the first and second regions, a protruding electrode is provided on the resin layer,
Grinding the semiconductor substrate from a surface opposite to the surface on which the resin layer of the semiconductor substrate is provided.

  According to the present invention, the grinding step is performed with the resin layer and the protruding electrode provided in the first and second regions. Since the resin layer and the protruding electrode are provided from the first region to the second region around the first region, the semiconductor substrate can be prevented from warping due to stress due to grinding. Therefore, the semiconductor substrate can be ground to have substantially the same thickness.

(22) In this method of manufacturing a semiconductor device,
The second region may include a portion of a region that becomes a semiconductor chip including a side surface of the semiconductor substrate.

  (23) A semiconductor device according to the present invention is manufactured by the above method.

  (24) A circuit board according to the present invention has the semiconductor device mounted thereon.

  (25) An electronic device according to the present invention includes the electronic device.

  Hereinafter, embodiments of the present invention will be described with reference to the drawings.

(First embodiment)
1 to 8 are views for explaining a method of manufacturing a semiconductor device according to the first embodiment of the present invention. In the present embodiment, the semiconductor substrate 10 is used. Here, FIG. 1 is a plan view of the semiconductor substrate, FIG. 2 is a cross-sectional view taken along the line II-II of FIG. 1, and FIG. 3 is a partially enlarged view of the semiconductor substrate of FIG. FIG. 4 is a partially enlarged view of a semiconductor substrate according to a modification.

  The semiconductor substrate 10 may be a semiconductor wafer (for example, a silicon wafer). The planar shape of the semiconductor wafer may be, for example, a circle (partially cut away in FIG. 1). As a modification, the semiconductor substrate 10 may be a divided substrate obtained by dividing a semiconductor wafer into a plurality of pieces (for example, four divisions). For example, the planar shape of the divided substrate may be a sector shape by being cut along the diameter (or radius) of the semiconductor wafer.

  As shown in FIG. 3, a plurality of integrated circuits 12 are formed on the semiconductor substrate 10. An integrated circuit 12 may be formed in each part of the semiconductor substrate 10 that becomes a semiconductor chip.

As shown in FIG. 3, the semiconductor substrate 10 has a plurality of pads 14. One group (two or more) of pads 14 may be formed in a portion to be a semiconductor chip. The integrated circuit 14 formed in the region to be each semiconductor chip is electrically connected to the pad 14 formed in the region to be each semiconductor chip. When the planar shape of the semiconductor chip is rectangular (square or rectangular), one group of pads 14 may be formed along at least one side (in many cases, two or four sides facing each other). Alternatively, it may be formed at the center of a portion to be a semiconductor chip. A protective film (for example, a passivation film) 15 such as SiN, SiO ₂ , or MgO may be formed on the semiconductor substrate 10 avoiding the pads 14. The protective film 15 is an insulating film. The protective film 15 has an opening on at least one of the pads 14 in a portion to be a semiconductor chip among the plurality of pads 14.

  The semiconductor substrate 10 includes a first region 20 (an area where the protruding electrode 46 is formed in FIG. 1) and a second region 30 (another area in FIG. 1). The semiconductor substrate 10 has portions to be a plurality of semiconductor chips. The cutting line L shows the boundary line of the part used as the adjacent semiconductor chip. The second region 30 is a region having a portion including at least the outer peripheral side surface of the semiconductor substrate 10 among the portions to be a plurality of semiconductor chips. The first area 20 is an area surrounded by the second area 30. The first region 20 may be formed in the central portion of the semiconductor substrate 10. In this case, the second region 30 is formed corresponding to the first region 20, and may be formed, for example, at the outer peripheral end of the semiconductor substrate 10 (for example, integrally with the outer peripheral end). The positions of the areas 20 and 30 can be arbitrarily determined in advance. The second region 30 may be used as a grip portion for handling the semiconductor substrate 10. Alternatively, the first region 20 may be a region in which a plurality of product parts are gathered. In this case, the second area 30 may be another area that is not a product. The first region 20 is a region formed of a portion that becomes a semiconductor chip partitioned only by the cutting line L. That is, in the first region 20, one partition portion partitioned by the cutting line L indicates a portion that becomes a semiconductor chip. On the other hand, the second region 30 is a region having a portion 34 to be a semiconductor chip partitioned by the outer peripheral side surface of the semiconductor substrate 10 and the cutting line L.

  Note that an integrated circuit 12 and a pad 14 are formed in the first region 20. In the first region 20, the protective film 15 has an opening on the pad 14. The pad 14 is electrically connected to the integrated circuit 14.

  In the example shown in FIG. 1, the second region 30 includes a portion 32 that becomes a semiconductor chip partitioned and surrounded only by the cutting line L. By doing so, the area of the second region 30 can be increased and the semiconductor substrate 10 can be easily handled. Further, the second region 30 may be constituted only by a portion 34 that becomes a semiconductor chip including at least the outer peripheral side surface of the semiconductor substrate 10. In this way, as many products as possible can be manufactured from one semiconductor substrate 10.

  In the example shown in FIG. 3, the integrated circuit 12 is not formed and the pad 14 is not formed in the second region 30. Conversely, a region where the integrated circuit 12 is not formed or a region where the pad 14 is not formed can be referred to as a second region 30.

  As a modification, as shown in FIG. 4, the integrated circuit 12 or the pad 14 may be formed in at least a part of the second region 30 (for example, the portion 32 to be a semiconductor chip). Good. As shown in FIG. 4, the pad 14 formed in the second region 30 (for example, the portion 32 to be a semiconductor chip) is not formed with an opening for exposing the pad 14 in the protective film 15. 15 may be covered.

  The semiconductor substrate 10 has the 1st surface 16 in which the pad 14 was formed, and the 2nd surface 18 opposite to it. The first surface 16 is formed with at least one member (in the example shown in FIG. 3, the resin layers 42, 48, 50, the wiring 44, and the protruding electrode 46) to form the convex portion 40. Has been. The convex portion 40 protrudes above the first region 20. At least one kind of member may be formed only in the first region 20. Or at least 1 type of member may be formed in the 1st and 2nd area | regions 20 and 30, and the part of the 1st area | region 20 may be formed so that it may swell rather than the part of the 2nd area | region 30.

  As shown in FIG. 3, the resin layer 42 is provided in a portion that becomes a plurality of semiconductor chips in the first region 20. The resin layer 42 may be a single layer or a plurality of layers. The resin layer 42 is provided avoiding the pad 14. For example, when the pad 14 is formed at the outer peripheral end portion of the portion that becomes the semiconductor chip, the resin layer 42 is provided in the central portion of the portion that becomes the semiconductor chip. The resin layer 42 has a stress relaxation function. The resin layer 42 can be formed of a resin such as polyimide resin, silicone-modified polyimide resin, epoxy resin, silicone-modified epoxy resin, benzocyclobutene (BCB), polybenzoxazole (PBO). The resin layer 42 may be formed between the semiconductor substrate 10 and the protruding electrode 46.

  At least one layer (a plurality of layers in FIG. 3) of wirings 44 is formed on the resin layer 42 from the pad 14. For example, among copper (Cu), chromium (Cr), titanium (Ti), nickel (Ni), titanium tungsten (TiW), gold (Au), aluminum (Al), nickel vanadium (NiV), tungsten (W) The wiring 44 may be formed by stacking any one or more of the above. When the pad 14 is formed at the outer peripheral end of the portion that becomes the semiconductor chip, the wiring 44 extends toward the center. The wiring 44 may have a land having a larger area than the line portion. In that case, the land is formed on the resin layer 42. A wiring pattern is formed on the resin layer 42 by forming the wiring 44 by connecting to a plurality of (one group) pads 14.

  A protruding electrode 46 (for example, an external terminal) is formed on the wiring 44. The protruding electrode 46 may be made of a brazing material. The brazing material is a metal (for example, an alloy) having conductivity, and is for melting and achieving electrical connection. The brazing material may be formed of either soft solder or hard solder. The protruding electrode 46 is formed on, for example, a land of the wiring 44. If the protruding electrode 46 is formed avoiding the upper side of the pad 14, the stress applied to the protruding electrode 46 can be prevented from being directly applied to the pad 14. The protruding electrode 46 is, for example, a solder ball or the like, and is used for electrical joining between a circuit board and a portion to be a semiconductor chip (see FIG. 8).

  A resin layer (for example, a solder resist layer) 48 may be formed above a portion of the wiring 44 excluding a portion (for example, a land) where the protruding electrode 46 is provided. Further, a resin layer 50 may be formed around the protruding electrode 46. The resin layer 50 covers the lower end portion (root portion) and the center portion of the protruding electrode 46. The upper end portion of the protruding electrode 46 is exposed from the resin layer 50. That is, at least a part of the protruding electrode 46 is exposed from the resin layer 50 in order to electrically connect the protruding electrode 46 and, for example, a circuit board. For example, the resin layer 50 has an opening, and the upper end portion of the protruding electrode 46 is exposed from the resin layer 50 through the opening. The resin layer 50 can reinforce the connection state of the protruding electrode 46 with the wiring 44. Thereby, the concentration of stress can be dispersed. Further, the resin layer 50 can prevent dust generated in the grinding and cutting process described later from entering between the protruding electrode 46 and the wiring 44.

  Apart from the above-described example, a part of the resin layers 42, 48, 50, the wiring 44, and the protruding electrode 46 may be provided in the second region 30. For example, any one or more of the resin layers 42, 48, 50 and the wiring 44 excluding the protruding electrode 46 may be laminated on the second region 30. Even in that case, by providing the protruding electrode 46 in the first region 20, the convex portion 40 that rises higher than the second region 30 is formed in the first region 20.

  As shown in FIG. 5, the second surface 18 of the semiconductor substrate 10 (the surface opposite to the surface on which the pads 14 are formed) 18 is ground. Since the convex part 40 is formed in the center part in the semiconductor substrate 10, the outer peripheral edge part relatively thinner than the center part is easily bent by the pressure applied during grinding. Therefore, in this embodiment, the support body 60 is used. The support body 60 supports at least the second region 30 of the first and second regions 20 and 30 of the semiconductor substrate 10 from the first surface 16 side.

  The support 60 may be a mold having a predetermined shape. The support 60 may be formed of a metal such as stainless steel, or may be formed of a resin such as polyethylene terephthalate (PET).

  In the example illustrated in FIG. 5, the support body 60 includes a first support portion 62 that supports the semiconductor substrate 10 from the first surface 16 side. The first support part 62 may support only the second region 30. The first support portion 62 may support only the outer peripheral end portion. The first support portion 62 may partially support the outer peripheral end portion along the outer periphery, but may support the outer peripheral end portion integrally along the outer periphery as shown in FIG. Good. The support body 60 may form a ring shape along the outer peripheral end portion of the semiconductor substrate 10. That is, the support body 60 has a through hole 61, the through hole 61 may be positioned so as to correspond to the first region 20, and the protrusion 40 on the first region 20 may be provided to fit into the opening. Good. The first support part 62 preferably supports at least the outermost periphery of the semiconductor substrate 10. By so doing, the downward bending of the outermost periphery of the semiconductor substrate 10 can be greatly reduced. The first support portion 62 preferably has a thickness equal to or greater than the step between the second region 30 and the protrusion of the convex portion 40.

  As a modification, the first support portion 62 may further support the first region 20 (specifically, the convex portion 40). In that case, the support is formed so that the portion overlapping the second region 30 is thicker than the portion overlapping the first region.

  The support body 60 may further include a second support portion 64. The second support portion 64 supports the outer peripheral side surface of the semiconductor substrate 10. By doing so, the stress generated in the lateral direction (direction parallel to the first (or second) surface 16) of the semiconductor substrate 10 can be effectively received. The second support portion 64 is formed to rise in the thickness direction of the semiconductor substrate 10. That is, the support body 60 includes a first support portion 62 and a second support portion 64 that is disposed on the outer side of the first support portion 62 and is thicker than the first support portion 62. The second support portion 64 is formed so as not to exceed the thickness of the semiconductor substrate 10 after grinding. When the support body 60 has the first and second support portions 62 and 64, the outer peripheral end portion of the semiconductor substrate 10 is aligned with the corner portion constituted by the first and second support portions 62 and 64 ( (See FIGS. 5 and 6). In other words, a stepped portion is formed on the periphery of the through hole 61 of the support 60, and the outer peripheral end portion of the semiconductor substrate 10 is disposed on the stepped portion.

  In the grinding process, as shown in FIG. 5, the first surface 16 side of the semiconductor substrate 10 may be held by a tape (holding body) 70. Specifically, the upper end portion (for example, the protruding electrode 46) of the convex portion 40 is held by the tape 70. The tape 70 may have adhesiveness. For example, a UV tape using an ultraviolet curable resin as an adhesive may be used as the tape 70. Further, in the case of UV tape, the adhesive strength can be easily weakened by irradiating with ultraviolet rays, so that peeling after the grinding step is easy.

  When the tape 70 is used, a support body 60 (specifically, the first support portion 62) is disposed between the semiconductor substrate 10 and the tape 70. The support body 60 may be held by the tape 70. Then, the tape 70 is placed on a stage (not shown), and the semiconductor substrate 10 is ground by the grinding tool 72. The grinding tool 72 grinds the semiconductor substrate 10 thinly by moving laterally while rotating on the semiconductor substrate 10. If a mold having a predetermined shape is used as the support 60, the process is simple because the mold is only set at a predetermined position.

  Thereafter, as shown in FIG. 7, the semiconductor substrate 10 is cut for each integrated circuit 12 by, for example, a blade 74. A plurality of products (semiconductor chips 82) can be obtained from the first region 20 by cutting the semiconductor substrate 10. The semiconductor chip 82 is thinned by grinding the surface opposite to the surface on which the pads are formed. The semiconductor chip 82 includes the resin layers 42, 48, 50, the wiring 44, and the brazing material 46, and can be said to be the semiconductor device 80. This semiconductor device can be classified as a CSP because its package size is almost equal to that of a semiconductor chip.

  According to the present embodiment, at least the second region 30 is supported by the support body 60 in the step of grinding the semiconductor substrate 10. As a result, the convex portion 40 is formed in the first region 20, so that even if the portion of the second region 30 becomes relatively thin, warpage of the semiconductor substrate 10 due to stress during grinding is greatly reduced. be able to. Therefore, the semiconductor substrate 10 can be ground to substantially the same thickness.

  Furthermore, since the thickness of the central portion of the semiconductor substrate 10 and the portion close to the outer peripheral end portion can be made substantially the same, as many semiconductor chips having a predetermined thickness as possible can be obtained from one semiconductor substrate 10. And the yield of the semiconductor device can be increased.

  In this Embodiment, the convex part 40 formed in the 1st surface 16 is not limited to the above-mentioned example. The protruding portion 40 may be, for example, a protruding electrode laminated on the pad 14. The protruding electrode is formed by, for example, a plating method (electroless plating method or electroplating method). The present invention is effective when applied to a case where a convex portion is generated on the surface of the semiconductor substrate 10.

  FIG. 12 is a diagram illustrating a circuit board on which a semiconductor device is mounted. A wiring pattern 92 is formed on the circuit board 90, and the protruding electrode 46 is bonded to the wiring pattern 92. The details of the semiconductor device according to the present embodiment are as described above, and have the effects described in the above manufacturing method.

  The present invention is not limited to the embodiment described above, and various forms are possible. In the following description of the embodiments, matters (configuration, operation, function, and effect) common to other embodiments and matters that can be assumed from other embodiments are omitted. Note that the present invention includes matters achieved by combining a plurality of embodiments.

(Second Embodiment)
FIG. 9A and FIG. 9B are diagrams for explaining a method for manufacturing a semiconductor device according to the second embodiment of the present invention. In the present embodiment, the support 100 including the adhesive layer 98 and the adhesive sheet 71 is used in the grinding process. The support body 100 supports at least the second region 30 of the semiconductor substrate 10 from the first surface 16 side. The semiconductor substrate 10 is as described in the above embodiment.

  In the example shown in FIG. 9A, an adhesive layer 98 is provided on an adhesive sheet (holding body) 71 for holding the semiconductor substrate 10. As shown in FIG. 9A, the adhesive layer 98 may be in the form of a paste or a sheet. The adhesive layer 98 and the adhesive sheet 71 may be separate or may be integrated. The adhesive layer 98 is provided on the adhesive sheet 71 so as to be thicker than the height of the protrusion of the convex portion 40. The adhesive layer 98 has a property of being cured (the shape is determined) by applying predetermined energy (heat, light, etc.). The adhesive layer 98 may be a resin (for example, a thermosetting resin). In the case of a paste, the adhesive layer 98 may be applied with a dispenser or the like. As shown in FIG. 9A, the adhesive layer 98 may be provided so as to contact the second region 30 while avoiding the first region 20 of the semiconductor substrate 10. The adhesive layer 98 is provided so that the second region 30 of the semiconductor substrate 10 can be supported partially or integrally along the outer periphery of the semiconductor substrate 10. Note that the adhesive layer 98 may be provided on the semiconductor substrate 10 side.

  As shown in FIG. 9B, the adhesive layer 98 is cured with the semiconductor substrate 10 set at the grinding position. In the example shown in FIG. 9B, the adhesive layer 98 is cured in a state where the semiconductor substrate 10 is held on the adhesive sheet 71. In that case, the shape of the adhesive layer 98 may be adjusted by pressing the semiconductor substrate 10 from the second surface 18 side.

  The support body 100 may protrude outside the semiconductor substrate 10. That is, the semiconductor substrate 10 is pressed against the adhesive sheet 71 and at least a part of the adhesive layer 98 is discharged outside the convex portion 40. By doing so, the height of the semiconductor substrate 10 can be easily adjusted. Therefore, the semiconductor substrate 10 can be supported so that the second surface 18 is substantially horizontal. Further, the support 100 can effectively receive the stress generated in the lateral direction of the semiconductor substrate 10 (direction parallel to the first (or second) surface 16). It can be said that the support body 100 includes a first support portion that supports the semiconductor substrate 10 from the first surface side, and a second support portion that supports the side end portion of the semiconductor substrate 10.

  Thereafter, in the step of cutting the semiconductor substrate 10, the semiconductor substrate 10 may be cut in a state of being in contact with the adhesive layer 98 and the adhesive sheet 71. According to this, the first surface 16 of the semiconductor substrate 10 can be protected from dust generated in the cutting process.

  As a modification, as shown in FIG. 9C, the adhesive layer 98 is provided so as to contact the entire surface of the semiconductor substrate 10 on which the convex portions 40 are formed, and the support 101 is provided on the semiconductor substrate 10. May be. Specifically, the first surface 16 of the semiconductor substrate 10 may be covered with an adhesive layer 98.

  According to the present embodiment, for example, even if the height of the protrusions of the protrusions 40 of the first region 20 varies from one semiconductor substrate 10 to another, a support having a predetermined thickness according to each semiconductor substrate 10. 100 can be formed easily.

(Third embodiment)
FIG. 10A to FIG. 10C are views for explaining a method for manufacturing a semiconductor device according to the third embodiment of the present invention. In this embodiment mode, the support 106 used in the grinding process is formed using a spin coating method.

  As shown in FIG. 10A, the resin 102 is spin-coated on the first surface 16 of the semiconductor substrate 10. Specifically, the resin 102 is dropped while rotating the semiconductor substrate 10 about a direction perpendicular to the plane. The resin 102 may be dropped on the central portion of the semiconductor substrate 10. The dropped resin 102 flows in the direction of the outer peripheral edge by the rotation of the semiconductor substrate 10. Thus, the resin 102 is provided on the entire first surface 16 of the semiconductor substrate 10.

  As shown in FIG. 10B, a raised portion 104 of the resin 102 may be formed in the second region 30 of the semiconductor substrate 10. By doing so, it is possible to prevent the resin 102 from being lowered in the second region 30 of the semiconductor substrate 10. The raised portion 104 rises higher than the central portion of the semiconductor substrate 10. The width (width in the direction orthogonal to the outer periphery) and height of the raised portion 104 are adjusted as appropriate by selecting various parameters such as the rotation speed, rotation time, and physical properties (for example, viscosity) of the resin 102. be able to. What is necessary is just to adjust the width | variety and height of the raised part 104 so that the surface opposite to the semiconductor substrate 10 of the support body 106 may become substantially flat when it pressurizes later.

  Thereafter, the raised portion 104 may be crushed by applying pressure with the tool 76. In this way, as shown in FIG. 10C, a support 106 having a substantially flat surface opposite to the semiconductor substrate 10 is formed. In the grinding step, the semiconductor substrate 10 may be ground on the tape 70 or the tape 70 may not be used. The raised portion 104 may be left as it is in the grinding process without being crushed.

  As a modified example, the raised portion 104 may not be formed. In that case, the surface of the support 106 opposite to the semiconductor substrate 10 may be adjusted to be substantially flat by selecting the various parameters described above.

  According to the present embodiment, the support 106 can be easily formed.

(Fourth embodiment)
11 to 14 are views for explaining a method of manufacturing a semiconductor device according to the fourth embodiment of the present invention. In this embodiment mode, a semiconductor substrate 110 is used. Here, FIG. 11 is a plan view of the semiconductor substrate, FIG. 12 is a cross-sectional view taken along line XII-XII in FIG. 11, and FIG. 13 is a partially enlarged view of the semiconductor substrate in FIG. In the present embodiment, at least one kind of member 140 (for example, resin layers 142, 148, 150, wirings 144, protruding electrodes 146) is formed in the first region 120 in at least a part of the second region 130. The layers are stacked so as to be almost the same height as the portion (see FIGS. 12 and 13). Note that at least one kind of member 140 refers to a member that is stacked in the first region 120 and becomes a part of a product (a part of a semiconductor device), and is limited to the example described in this embodiment. is not.

  The semiconductor substrate 110 includes an integrated circuit 112, a pad 114, and a protective film 115, the details of which are as described above. At least one kind of member 140 is stacked on the first surface 116 (the first region 120 and the second region 130) of the semiconductor substrate 110. Here, the first region 120 indicates an area inside the two-dot chain line shown in FIG. 11, and the second region 130 indicates an area outside the two-dot chain line. The details of the first region 120 and the second region 130 are as described above.

  As shown in FIG. 11, at least one kind of member 140 may be provided in a part of the second region 130. At least one kind of member 140 may be provided avoiding the outermost periphery of the outer peripheral end portion, or may be provided only on the outermost peripheral portion of the outer peripheral end portion. Alternatively, at least one kind of member 140 may be provided on the entire second region 130 (that is, the entire first surface 16).

  As shown in FIG. 13, the configuration of the portion stacked in the second region 130 of at least one kind of member 140 may be the same as the configuration of the portion stacked in the first region 120. In the example illustrated in FIG. 13, the integrated circuit and the pad are not formed in the second region 130. That is, in the example shown in FIG. 13, dummy wirings (wirings 144) and dummy terminals (projecting electrodes 146) are formed in the second region 130. The details of the resin layers 142, 148, 150, the wiring 144, and the protruding electrode 146 are as described above.

  As shown in FIG. 14, the second surface 118 of the semiconductor substrate 10 is ground. Resin layers 142, 148, 150, wirings 144, and protruding electrodes 146 are formed in at least a part of the second region 130 of the first surface 116. At least one member 140 provided in the second region 130 serves as a support for the semiconductor substrate 110.

  According to the present embodiment, at least one kind of member 140 is stacked on at least a part of second region 130 so as to have substantially the same height as a portion formed in first region 120. Accordingly, the second region 130 is supported in the grinding process, and the warpage of the semiconductor substrate 110 due to stress during grinding can be greatly reduced. Therefore, the semiconductor substrate 110 can be ground to substantially the same thickness.

  As an electronic apparatus having a semiconductor device according to an embodiment of the present invention, a notebook personal computer 1000 is shown in FIG. 15, and a mobile phone 2000 is shown in FIG.

  The present invention is not limited to the above-described embodiments, and various modifications can be made. For example, the present invention includes configurations that are substantially the same as the configurations described in the embodiments (for example, configurations that have the same functions, methods, and results, or configurations that have the same purposes and results). In addition, the invention includes a configuration in which a non-essential part of the configuration described in the embodiment is replaced. In addition, the present invention includes a configuration that exhibits the same operational effects as the configuration described in the embodiment or a configuration that can achieve the same object. Further, the invention includes a configuration in which a known technique is added to the configuration described in the embodiment.

FIG. 1 is a diagram showing a semiconductor substrate used in the first embodiment of the present invention. 2 is a cross-sectional view taken along line II-II in FIG. FIG. 3 is a partially enlarged view of the semiconductor substrate of FIG. FIG. 4 is a partially enlarged view of a semiconductor device according to a modification of the first embodiment of the present invention. FIG. 5 is a diagram showing a method for manufacturing the semiconductor device according to the first embodiment of the present invention. FIG. 6 is a diagram illustrating the method of manufacturing the semiconductor device according to the first embodiment of the present invention. FIG. 7 is a diagram illustrating the method of manufacturing the semiconductor device according to the first embodiment of the present invention. FIG. 8 is a diagram showing a circuit board on which the semiconductor device according to the first embodiment of the present invention is mounted. FIGS. 9A and 9C are views showing a method for manufacturing a semiconductor device according to the second embodiment of the present invention. FIG. 10A to FIG. 10C are views showing a method for manufacturing a semiconductor device according to the third embodiment of the present invention. FIG. 11 is a diagram showing a semiconductor device used in the fourth embodiment of the present invention. 12 is a cross-sectional view taken along line XII-XII in FIG. FIG. 13 is a partially enlarged view of the semiconductor substrate of FIG. FIG. 14 shows a method for manufacturing a semiconductor device according to the fourth embodiment of the present invention. FIG. 15 is a diagram showing an electronic apparatus according to an embodiment of the present invention. FIG. 16 is a diagram illustrating an electronic apparatus according to an embodiment of the present invention.

Explanation of symbols

10, 110 semiconductor substrate, 12, 112 integrated circuit, 14, 114 pad 15, 115 protective film, 16, 116 first surface, 18, 118 second surface,
20,120 1st area | region, 30,130 2nd area | region, 40 convex part,
42,142 resin layer, 44,144 wiring, 46,146 protruding electrode,
48,148 resin layer, 50,150 resin layer,
60, 100, 106 support, 62 first support, 64 second support

Claims (4)

Of the semiconductor substrate having an integrated circuit and a first region in which a pad electrically connected to the integrated circuit is formed and a second region around the first region, the first and second regions a step of the resin layer Ru is provided above the region,
Forming a wiring electrically connected to the pad at least above the resin layer in the first region, and providing a protruding electrode above the wiring;
Forming a dummy wiring at least above the resin layer and providing a dummy protrusion electrode above the dummy wiring in the second region;
From the opposite surface to the surface on which the resin layer is provided in the semiconductor substrate, a step of grinding the semiconductor substrate,
A method of manufacturing a semiconductor device including: In the manufacturing method of the semiconductor device according to claim 1,
The first region is a product region,
The method of manufacturing a semiconductor device, wherein the second region is a region that is not a product. In the manufacturing method of the semiconductor device of Claim 1 or Claim 2,
The first region is a region partitioned only by a cutting line when the semiconductor substrate is cut into a plurality of portions,
The method of manufacturing a semiconductor device, wherein the second region includes at least a region partitioned by a cutting line when the semiconductor substrate is cut into a plurality of portions and an outer periphery of the semiconductor substrate. In the manufacturing method of the semiconductor device of any one of Claims 1-3,
A laminated structure including at least the resin layer and before Ki突 electromotive electrodes above the first region, substantially level with the stacked structure including at least the resin layer and the dummy protruding electrodes above the second region A method for manufacturing a semiconductor device.

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