JP2005302885A - Semiconductor circuit board and semiconductor circuit - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To efficiently perform noise countermeasures for a semiconductor circuit board and further to enable to reduce a development cost. <P>SOLUTION: The semiconductor circuit board comprises a control board 1 and a semiconductor circuit 2 connected to the corresponding control board 1. The semiconductor circuit 2 has a board 21, an integrated circuit group 22, and noise countermeasure means 23, 231. These are constituted separate from the control board 1. The integrated circuit group 22 contains an integrated circuit serving as a noise generating source, for example, a fast switching element 221, and a transmission/reception circuit 222. The board 21 is a multilayer lamination board, to shift a frequency of noises generated from the integrated circuit group 221 to a side of a high frequency. The noise countermeasure means 23 is connected between the integrated circuit group 22 and the control board 1, and in particular, a filter damping the high frequency of noises suffices. <P>COPYRIGHT: (C)2006,JPO&NCIPI

Description

  The present invention relates to a semiconductor circuit substrate and a semiconductor circuit, and can be applied to, for example, design technology.

  In order to control the operation of an air conditioner or the like, for example, a semiconductor circuit board is provided. In a conventional semiconductor circuit board, an integrated circuit group and its control circuit, power supply circuit and the like are formed on the same board. The integrated circuit group includes, for example, a high-speed switching element and a transmission / reception circuit. The control circuit includes, for example, a microprocessor and controls the integrated circuit group. The power supply circuit supplies power to the integrated circuit group.

  A technique for simulating radiation noise is disclosed in Patent Document 1. Non-Patent Document 1 introduces a technique for reducing noise generated from a power supply by using an inductor such as a ferrite bead or a coil and a bypass capacitor. Non-Patent Document 2 introduces a technique for reducing the generation of noise from an electronic device by making the structure of the electronic device a multilayer laminated substrate.

JP-A-6-309420 “Transistor Technology”, CQ Publishing, October 2001, p202 Seiichi Miyazaki, “Noise Countermeasure Q & A 101 Questions”, Systems Research Institute, p. 88-89

  In recent years, the processing speed of a semiconductor circuit board, for example, the switching speed of a high-speed switching element has been increased with the improvement in performance of air conditioners and the like. On the other hand, unnecessary noise is generated from a high-speed switching element or the like with an increase in processing speed. Unnecessary noise may affect other circuits in the semiconductor circuit board and devices arranged around the air conditioner and the like.

  Therefore, for example, noise is reduced by the technique introduced in Non-Patent Document 1 and Non-Patent Document 2 described above. However, in the conventional semiconductor circuit substrate, since each circuit is formed on the same substrate, it is necessary to take measures against noise for each semiconductor circuit substrate. For this reason, problems such as high development costs have arisen.

  Further, noise countermeasures for conventional semiconductor circuit boards are often performed after the design of the semiconductor circuit board. For this reason, the necessary noise countermeasures could not be efficiently taken.

  The present invention has been made in view of the above-described circumstances, and an object of the present invention is to efficiently take measures against noise on a semiconductor circuit board and further reduce development costs and component costs.

According to a first aspect of the present invention, a semiconductor circuit board includes a control board (1) and a semiconductor circuit (2) connected to the control board, and the semiconductor circuit includes the board (21) and the board. An integrated circuit group (22) mounted on the substrate and a noise countermeasure means (23) mounted on the substrate, the integrated circuit group including an integrated circuit (221) serving as a noise generation source, It is configured separately from the control board.

  A semiconductor circuit board according to a second aspect of the present invention is the semiconductor circuit board according to the first aspect, wherein the integrated circuit group (22), the control board (1), and the control board (1) are arranged via the noise countermeasure means (23). Is connected.

  A semiconductor circuit substrate according to a third aspect of the present invention is the semiconductor circuit substrate according to the first or second aspect, wherein the substrate (21) is a first layer on which the integrated circuit group (22) is mounted. A multi-layer laminated substrate including a substrate (31) and a plurality of second layer substrates (32, 33) formed with patterns that are inner layers with respect to the first layer substrate and are supplied with different fixed potentials. is there.

  A semiconductor circuit board according to a fourth aspect of the present invention is the semiconductor circuit board according to any one of the first to third aspects, wherein the noise countermeasure means (23) includes the integrated circuit group ( 22) attenuates the high-frequency component of the noise generated from step 22).

  A semiconductor circuit board according to a fifth aspect of the present invention is the semiconductor circuit board according to any one of the first to fourth aspects, wherein the noise countermeasure means (23) is a filter.

  A semiconductor circuit board according to a sixth aspect of the present invention is the semiconductor circuit board according to the first aspect, wherein the semiconductor circuit includes second noise countermeasure means (231) mounted on the substrate (21). Further, the substrate (21) is a first layer substrate (31) on which the integrated circuit group (22) is mounted, and is an inner layer with respect to the first layer substrate, and is supplied with different fixed potentials. And a plurality of second layer substrates (32, 33) on which a pattern to be formed is formed, and the integrated circuit group and the fixed potential are supplied via the second noise countermeasure means. The pattern is connected.

  A semiconductor circuit board according to a seventh aspect of the present invention is the semiconductor circuit board according to the sixth aspect, wherein the noise countermeasure means is connected to the pattern to which the fixed potential is supplied.

  A semiconductor circuit board according to an eighth aspect of the present invention is the semiconductor circuit board according to the sixth or seventh aspect, wherein the noise countermeasure means (23) and the second noise countermeasure means (231) A high frequency component of noise generated from the integrated circuit group (22) is attenuated.

  A semiconductor circuit board according to a ninth aspect of the present invention is the semiconductor circuit board according to any one of the sixth to eighth aspects, wherein the noise countermeasure means (23) and the second noise countermeasure means. (231) is a filter.

  A semiconductor circuit board according to a tenth aspect of the present invention is the semiconductor circuit board according to any one of the first to ninth aspects, wherein the integrated circuit (221) includes a high-speed switching element.

  A semiconductor circuit according to an eleventh aspect of the present invention is a semiconductor circuit (2) connectable to the control board (1), the board (21), and an integrated circuit group (22) mounted on the board. And the noise countermeasure means (23) mounted on the substrate, and the integrated circuit group includes an integrated circuit (221) serving as a noise generation source and is configured separately from the control substrate.

  A semiconductor circuit according to a twelfth aspect of the present invention is the semiconductor circuit according to the eleventh aspect, wherein the integrated circuit group (22) and the control board (1) are connected via the noise countermeasure means (23). Is possible.

  A semiconductor circuit according to a thirteenth aspect of the present invention is the semiconductor circuit according to the eleventh or twelfth aspect, wherein the substrate (21) is a first layer substrate on which the integrated circuit group (22) is mounted ( 31) and a plurality of second layer substrates (32, 33) which are inner layers with respect to the first layer substrate and are provided with patterns to which different fixed potentials are supplied.

  A semiconductor circuit according to a fourteenth aspect of the present invention is the semiconductor circuit according to any one of the eleventh to thirteenth aspects, wherein the noise countermeasure means (23) is the integrated circuit group (22). Attenuates high frequency components of noise generated from

  A semiconductor circuit according to a fifteenth aspect of the present invention is the semiconductor circuit according to any one of the eleventh to fourteenth aspects, wherein the noise countermeasure means (23) is a filter.

  A semiconductor circuit according to a sixteenth aspect of the present invention is the semiconductor circuit according to the eleventh aspect, further comprising second noise countermeasure means (231) mounted on the substrate (21). 21) includes a first layer substrate (31) on which the integrated circuit group (22) is mounted and a pattern that is an inner layer with respect to the first layer substrate and that is supplied with different fixed potentials. A multilayer laminated substrate including a plurality of second layer substrates (32, 33), wherein the integrated circuit group and the pattern to which the fixed potential is supplied are connected via the second noise countermeasure means. .

  A semiconductor circuit according to a seventeenth aspect of the present invention is the semiconductor circuit according to the sixteenth aspect, wherein the noise countermeasure means (23) is connected to the pattern to which the fixed potential is supplied.

  A semiconductor circuit according to an eighteenth aspect of the present invention is the semiconductor circuit according to the sixteenth or seventeenth aspect, wherein the noise countermeasure means (23) and the second noise countermeasure means (231) are the integrated circuit. A high frequency component of noise generated from the group (22) is attenuated.

  A semiconductor circuit according to a nineteenth aspect of the present invention is the semiconductor circuit according to any one of the sixteenth to eighteenth aspects, wherein the noise countermeasure means (23) and the second noise countermeasure means (231). ) Is a filter.

  A semiconductor circuit according to a twentieth aspect of the present invention is the semiconductor circuit according to any one of the eleventh to nineteenth aspects, wherein the integrated circuit (221) includes a high-speed switching element.

  According to the semiconductor circuit board of claim 1 of the present invention, by separating the integrated circuit group including the integrated circuit serving as a noise generation source from the control board, noise to the control board can be removed by noise removal by the noise countermeasure means. Propagation is reduced. In addition, since the semiconductor circuit board can be designed by retrofitting the semiconductor circuit to which the noise countermeasure means is applied, the noise countermeasure can be efficiently performed on the semiconductor circuit board, and the development cost is reduced.

  According to the semiconductor circuit board of claim 2 of the present invention, the noise generated in the integrated circuit group is prevented from propagating by the noise countermeasure means before reaching the control board.

  According to the semiconductor circuit substrate of the third aspect of the present invention, the frequency of noise generated in the semiconductor circuit is shifted to the high frequency side. Therefore, it is sufficient that the noise removal means removes a high-frequency component of noise. Therefore, the noise countermeasure means can be easily designed.

  According to the semiconductor circuit substrate of the fourth aspect of the present invention, high frequency noise does not propagate from the semiconductor circuit.

  According to the semiconductor circuit substrate of claim 5 of the present invention, the filter can remove noise, and therefore can be used in the aspect described in any one of claims 1 to 4.

  According to the semiconductor circuit board of the sixth aspect of the present invention, the frequency of noise generated in the semiconductor circuit is shifted to the high frequency side. Therefore, the object to be removed by the noise countermeasure means and the second noise countermeasure means may be a high frequency component of noise. Therefore, the noise countermeasure means can be easily designed. Further, the second noise countermeasure means further reduces the noise propagation from the integrated circuit group to the pattern to which the fixed potential is supplied.

  According to the semiconductor circuit board of claim 7 of the present invention, noise propagation from the pattern to which the fixed potential is supplied to the control board is reduced.

  According to the semiconductor circuit board of claim 8 of the present invention, in the semiconductor circuit, the frequency of the noise is shifted to the high frequency side, and the high frequency component of the noise is attenuated by the noise countermeasure means and the second noise countermeasure means. Noise propagation from the circuit is suppressed.

  According to the semiconductor circuit substrate of the ninth aspect of the present invention, the filter can remove noise, and therefore can be used in the aspect described in any one of the sixth to eighth aspects.

  According to the semiconductor circuit board of the tenth aspect of the present invention, the high-speed switching element serves as a noise generation source, so that it can be used in any one of the first to ninth aspects.

  According to the semiconductor circuit of the eleventh aspect of the present invention, by separating the integrated circuit group including the integrated circuit serving as a noise generation source and the control board, noise removal to the control board can be performed by noise removal by the noise countermeasure means. Propagation is reduced. Moreover, while adopting various control boards to be connected, noise countermeasures are not required for the control boards. Therefore, the semiconductor circuit can be retrofitted and used, for example, in a mode of designing a semiconductor circuit substrate.

  According to the semiconductor circuit of the twelfth aspect of the present invention, the noise generated in the integrated circuit group is prevented from propagating by the noise countermeasure means before reaching the control board.

  According to the semiconductor circuit of the thirteenth aspect of the present invention, the frequency of noise generated in the semiconductor circuit is shifted to the high frequency side. Therefore, it is sufficient that the noise removal means removes a high-frequency component of noise. Therefore, the noise countermeasure means can be easily designed.

  According to the semiconductor circuit of the fourteenth aspect of the present invention, high frequency noise does not propagate from the semiconductor circuit.

  According to the semiconductor circuit of the fifteenth aspect of the present invention, since the filter can remove noise, the filter can be used in any one of the eleventh to fourteenth aspects.

  According to the semiconductor circuit of the sixteenth aspect of the present invention, the frequency of noise generated in the semiconductor circuit is shifted to the high frequency side. Therefore, the object to be removed by the noise countermeasure means and the second noise countermeasure means may be a high frequency component of noise. Therefore, the noise countermeasure means can be easily designed. Further, the second noise countermeasure means further reduces the noise propagation from the integrated circuit group to the pattern to which the fixed potential is supplied.

  According to the semiconductor circuit of the seventeenth aspect of the present invention, the propagation of noise from the pattern to which the fixed potential is supplied to the control board is reduced.

  According to the semiconductor circuit of the eighteenth aspect of the present invention, in the semiconductor circuit, the frequency of the noise is shifted to the high frequency side, and the high frequency component of the noise is attenuated by the noise countermeasure means and the second noise countermeasure means. Noise propagation from the is suppressed.

  According to the semiconductor circuit of the nineteenth aspect of the present invention, since the filter can remove noise, the filter can be used in any one of the sixteenth to eighteenth aspects.

  According to the semiconductor circuit of the twentieth aspect of the present invention, the high-speed switching element serves as a noise generation source, and therefore can be used in the aspect described in any one of the first to ninth aspects.

  FIG. 1 is a perspective view conceptually showing the structure of a semiconductor circuit board according to the present invention. The semiconductor circuit board includes a control board 1 and a semiconductor circuit 2 connected to the control board 1. The control board 1 has a microprocessor, for example, and controls the semiconductor circuit 2. The semiconductor circuit 2 includes a substrate 21, an integrated circuit group 22, and noise countermeasure means 23 and 231, and is configured separately from the control substrate 1. The integrated circuit group 22 and the noise countermeasure means 23 and 231 are mounted on the substrate 21.

  The integrated circuit group 22 includes an integrated circuit that becomes a noise generation source, for example, a high-speed switching element 221. In addition, other integrated circuits such as the transmission / reception circuit 222 may be included. Since the semiconductor circuit 2 is configured separately from the control board 1 as described above, the integrated circuit group 22 is also configured separately from the control board 1.

  FIG. 2 is a perspective view showing the configuration of the substrate 21. The board | substrate 21 is a multilayer laminated board, Comprising: The board | substrates 31, 32, 33, and 34 are laminated | stacked in this order. In FIG. 2, for the sake of convenience, each substrate is shown separated in the stacking direction so that the pattern formed on each substrate is clear.

  The substrate 31 is the outermost layer of the substrate 21 and has the integrated circuit group 22 and noise countermeasure means 23 and 231 mounted thereon. Circuits other than the integrated circuit group 2 may be formed on the substrate 31. In addition, one or both of the noise countermeasure units 23 and 231 may be mounted on the substrate 34.

  The substrates 32 and 33 are inner layers with respect to the substrate 21 and are respectively formed with patterns to which different fixed potentials are supplied, and are adjacent to each other, for example. In FIG. 2, the pattern is formed on the surfaces of the substrates 32 and 33 on the substrate 31 side. The pattern formed on the substrate 32 is connected to, for example, the ground, and the pattern formed on the substrate 33 is connected to, for example, an external power source.

  Since the substrates are stacked, the circuits formed on the substrates are connected to each other, and the substrate 21 has a predetermined function such as a communication function.

  According to the multilayer laminated substrate described above, a capacitor is formed by using the pattern formed on the substrates 32 and 33 as an electrode and sandwiching the insulating layer between the electrode. Thereby, for example, noise generated in the high-speed switching element 221 can be shifted to the high frequency side. Therefore, the noise countermeasure means 23, 231 need only be a high-frequency component of noise, so that the noise countermeasure means 23, 231 can be easily designed.

  Even if the substrate 21 is not a multilayer laminated substrate, the noise countermeasures 23 and 231 suppress the propagation of high-frequency noise from the semiconductor circuit 2.

  FIG. 3 is a block diagram conceptually showing the semiconductor circuit substrate shown in FIGS. The noise countermeasure means 23 is, for example, a ferrite bead or a chip inductor, and is connected between the integrated circuit group 22 and the control board 1. In FIG. 3, the high-speed switching element 221 in the integrated circuit group 22 is connected to the noise countermeasure means 23. The wiring connecting the high-speed switching element 221 and the control board 1 via the noise countermeasure means 23 includes, for example, a signal line 111 and a power line 112.

  As described above, when the substrate 21 is a multi-layer laminated substrate, the noise countermeasure unit 23 may be a filter that attenuates high frequency noise. Since the noise countermeasure means 23 is connected between the integrated circuit group 22 and the control board 1, noise generated in the integrated circuit group 22 is removed before reaching the control board 1. In other words, the propagation of the high frequency noise from the semiconductor circuit 2 is hindered while the generation of the low frequency noise from the semiconductor circuit 2 is suppressed.

  The noise countermeasure means 231 is a filter such as a ferrite bead or a chip inductor, for example, and is connected between the integrated circuit group 22 and a pattern to be supplied with a fixed potential formed on the substrate 32. In FIG. 3, the high-speed switching element 221 in the integrated circuit group 22 is connected to the noise countermeasure means 231 by the wiring 114. A pattern supplied with a fixed potential formed on the substrate 32 is indicated by reference numeral 113.

  Further, the noise countermeasure means 23 is connected to a pattern formed on the substrate 32 and supplied with a fixed potential.

  In FIG. 2, the broken line indicates that the noise countermeasure means 23 and 231 are connected to a pattern formed on the substrate 32 and supplied with a fixed potential.

  As the noise countermeasure means 231, when the substrate 21 is a multilayer laminated substrate as described above, a filter that attenuates the high frequency of noise is sufficient. And since the noise countermeasure means 231 is connected between the integrated circuit group 22 and the pattern to which the fixed potential is supplied, the noise propagation to the pattern is reduced.

  According to the above-described content, the integrated circuit group 22 including the high-speed switching element 221 serving as a noise generation source is separated from the control board 1, so that noise removal by the noise countermeasure unit 23 removes high-frequency noise to the control board 1. Propagation can be reduced. Furthermore, the use of the multilayer laminated substrate having the above-described configuration as the substrate 21 can reduce the occurrence of low-frequency noise in the semiconductor circuit 2. In addition, since the semiconductor circuit board can be designed by retrofitting the semiconductor circuit 2 provided with noise countermeasure means, noise countermeasures can be efficiently performed on the semiconductor circuit board, and the development cost can be reduced. .

  In the present embodiment, the semiconductor circuit board including the control board 1 and the semiconductor circuit 2 has been described. However, the semiconductor circuit 2 may be configured alone. In this case, the semiconductor circuit 2 can be connected to an external circuit that can control the semiconductor circuit 2, for example, the control board 1. Therefore, the semiconductor circuit 2 can be used in a mode of retrofitting and designing a semiconductor circuit substrate, for example.

1 is a perspective view conceptually showing a semiconductor circuit board according to the present invention. It is a perspective view which shows notionally the board | substrate 21 which is a multilayer laminated substrate. 1 is a block diagram conceptually showing a semiconductor circuit board.

Explanation of symbols

DESCRIPTION OF SYMBOLS 1 Control board 2 Semiconductor circuit 21 Board | substrate 22 Integrated circuit group 23,231 Noise countermeasure means 31-33 Board | substrate 221 High-speed switching element (integrated circuit)

Claims (20)

A control board (1);
A semiconductor circuit (2) connected to the control board,
The semiconductor circuit is:
A substrate (21);
An integrated circuit group (22) mounted on the substrate;
Noise countermeasure means (23) mounted on the substrate,
The integrated circuit group includes a semiconductor circuit board including an integrated circuit (221) serving as a noise generation source and separated from the control board.   The semiconductor circuit board according to claim 1, wherein the integrated circuit group (22) and the control board (1) are connected via the noise countermeasure means (23). The substrate (21)
A first layer substrate (31) on which the integrated circuit group (22) is mounted;
The multi-layer laminated substrate including a plurality of second layer substrates (32, 33) which are inner layers with respect to the first layer substrate and are formed with patterns to which different fixed potentials are supplied. The semiconductor circuit board according to claim 2.   The semiconductor circuit board according to any one of claims 1 to 3, wherein the noise countermeasure means (23) attenuates a high-frequency component of noise generated from the integrated circuit group (22).   The semiconductor circuit board according to any one of claims 1 to 4, wherein the noise countermeasure means (23) is a filter. The semiconductor circuit is:
Further comprising second noise countermeasure means (231) mounted on the substrate (21);
The substrate (21)
A first layer substrate (31) on which the integrated circuit group (22) is mounted;
A multi-layer laminated substrate including a plurality of second layer substrates (32, 33) which are inner layers with respect to the first layer substrate and are formed with patterns to which different fixed potentials are supplied;
The semiconductor circuit substrate according to claim 1, wherein the integrated circuit group and the pattern to which the fixed potential is supplied are connected via the second noise countermeasure unit.   The semiconductor circuit board according to claim 6, wherein the noise countermeasure means is connected to the pattern to which the fixed potential is supplied.   The semiconductor circuit board according to claim 6 or 7, wherein the noise countermeasure means (23) and the second noise countermeasure means (231) attenuate high-frequency components of noise generated from the integrated circuit group (22). .   9. The semiconductor circuit board according to claim 6, wherein the noise countermeasure means (23) and the second noise countermeasure means (231) are filters.   The semiconductor circuit substrate according to any one of claims 1 to 9, wherein the integrated circuit (221) includes a high-speed switching element. A semiconductor circuit (2) connectable to the control board (1),
A substrate (21);
An integrated circuit group (22) mounted on the substrate;
Noise countermeasure means (23) mounted on the substrate,
The integrated circuit group includes an integrated circuit (221) serving as a noise generation source, and is configured to be separated from the control board.   12. The semiconductor circuit according to claim 11, wherein the integrated circuit group (22) and the control board (1) are connectable via the noise countermeasure means (23). The substrate (21)
A first layer substrate (31) on which the integrated circuit group (22) is mounted;
The multi-layer laminated substrate including a plurality of second layer substrates (32, 33) which are inner layers with respect to the first layer substrate and are formed with patterns to which different fixed potentials are supplied. The semiconductor circuit according to claim 12.   The semiconductor circuit according to any one of claims 11 to 13, wherein the noise countermeasure means (23) attenuates a high-frequency component of noise generated from the integrated circuit group (22).   15. The semiconductor circuit according to claim 11, wherein the noise countermeasure means (23) is a filter. Further comprising second noise countermeasure means (231) mounted on the substrate (21);
The substrate (21)
A first layer substrate (31) on which the integrated circuit group (22) is mounted;
A multi-layer laminated substrate including a plurality of second layer substrates (32, 33) which are inner layers with respect to the first layer substrate and are formed with patterns to which different fixed potentials are supplied;
The semiconductor circuit according to claim 11, wherein the integrated circuit group and the pattern to which the fixed potential is supplied are connected via the second noise countermeasure unit.   17. The semiconductor circuit according to claim 16, wherein the noise countermeasure means (23) is connected to the pattern to which the fixed potential is supplied.   18. The semiconductor circuit according to claim 16, wherein the noise countermeasure means (23) and the second noise countermeasure means (231) attenuate high frequency components of noise generated from the integrated circuit group (22).   19. The semiconductor circuit according to claim 16, wherein the noise countermeasure means (23) and the second noise countermeasure means (231) are filters. 20. The semiconductor circuit according to any one of claims 11 to 19, wherein the integrated circuit (221) includes a high speed switching element.

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