GB8430820D0 - Gate protection arrangement - Google Patents
Gate protection arrangementInfo
- Publication number
- GB8430820D0 GB8430820D0 GB848430820A GB8430820A GB8430820D0 GB 8430820 D0 GB8430820 D0 GB 8430820D0 GB 848430820 A GB848430820 A GB 848430820A GB 8430820 A GB8430820 A GB 8430820A GB 8430820 D0 GB8430820 D0 GB 8430820D0
- Authority
- GB
- United Kingdom
- Prior art keywords
- protection arrangement
- gate protection
- gate
- arrangement
- protection
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
- H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
- H01L21/82—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components
- H01L21/822—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components the substrate being a semiconductor, using silicon technology
- H01L21/8232—Field-effect technology
- H01L21/8234—MIS technology, i.e. integration processes of field effect transistors of the conductor-insulator-semiconductor type
- H01L21/8238—Complementary field-effect transistors, e.g. CMOS
- H01L21/823892—Complementary field-effect transistors, e.g. CMOS with a particular manufacturing method of the wells or tubs, e.g. twin tubs, high energy well implants, buried implanted layers for lateral isolation [BILLI]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
- H01L27/0203—Particular design considerations for integrated circuits
- H01L27/0248—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection
- H01L27/0251—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection for MOS devices
- H01L27/0288—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection for MOS devices using passive elements as protective elements, e.g. resistors, capacitors, inductors, spark-gaps
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/76—Making of isolation regions between components
- H01L21/762—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers
- H01L21/76202—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using a local oxidation of silicon, e.g. LOCOS, SWAMI, SILO
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
- H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
- H01L21/82—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components
- H01L21/822—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components the substrate being a semiconductor, using silicon technology
- H01L21/8232—Field-effect technology
- H01L21/8234—MIS technology, i.e. integration processes of field effect transistors of the conductor-insulator-semiconductor type
- H01L21/8238—Complementary field-effect transistors, e.g. CMOS
- H01L21/823807—Complementary field-effect transistors, e.g. CMOS with a particular manufacturing method of the channel structures, e.g. channel implants, halo or pocket implants, or channel materials
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
- H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
- H01L21/82—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components
- H01L21/822—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components the substrate being a semiconductor, using silicon technology
- H01L21/8232—Field-effect technology
- H01L21/8234—MIS technology, i.e. integration processes of field effect transistors of the conductor-insulator-semiconductor type
- H01L21/8238—Complementary field-effect transistors, e.g. CMOS
- H01L21/823814—Complementary field-effect transistors, e.g. CMOS with a particular manufacturing method of the source or drain structures, e.g. specific source or drain implants or silicided source or drain structures or raised source or drain structures
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
- H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
- H01L21/82—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components
- H01L21/822—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components the substrate being a semiconductor, using silicon technology
- H01L21/8232—Field-effect technology
- H01L21/8234—MIS technology, i.e. integration processes of field effect transistors of the conductor-insulator-semiconductor type
- H01L21/8238—Complementary field-effect transistors, e.g. CMOS
- H01L21/823878—Complementary field-effect transistors, e.g. CMOS isolation region manufacturing related aspects, e.g. to avoid interaction of isolation region with adjacent structure
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
- H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body
- H01L27/08—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including only semiconductor components of a single kind
- H01L27/085—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only
- H01L27/088—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only the components being field-effect transistors with insulated gate
- H01L27/092—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only the components being field-effect transistors with insulated gate complementary MIS field-effect transistors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/43—Electrodes ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
- H01L29/45—Ohmic electrodes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/86—Types of semiconductor device ; Multistep manufacturing processes therefor controllable only by variation of the electric current supplied, or only the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched
- H01L29/8605—Resistors with PN junctions
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP58229915A JPS60123052A (en) | 1983-12-07 | 1983-12-07 | Semiconductor device |
Publications (3)
Publication Number | Publication Date |
---|---|
GB8430820D0 true GB8430820D0 (en) | 1985-01-16 |
GB2152283A GB2152283A (en) | 1985-07-31 |
GB2152283B GB2152283B (en) | 1987-06-17 |
Family
ID=16899729
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
GB08430820A Expired GB2152283B (en) | 1983-12-07 | 1984-12-06 | Gate protection arrangement for a semiconductor device |
Country Status (8)
Country | Link |
---|---|
JP (1) | JPS60123052A (en) |
KR (1) | KR850005142A (en) |
DE (1) | DE3444741A1 (en) |
FR (1) | FR2556502B1 (en) |
GB (1) | GB2152283B (en) |
HK (1) | HK4389A (en) |
IT (1) | IT1178736B (en) |
SG (1) | SG77688G (en) |
Families Citing this family (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE3882892D1 (en) * | 1987-10-29 | 1993-09-09 | Itt Ind Gmbh Deutsche | PROTECTIVE ARRANGEMENT FOR MOS CIRCUITS. |
EP0320217B1 (en) * | 1987-12-07 | 1996-05-01 | Texas Instruments Incorporated | An improved twin-well BiCMOS process |
NL8900593A (en) * | 1989-03-13 | 1990-10-01 | Philips Nv | SEMICONDUCTOR DEVICE WITH A PROTECTION CIRCUIT. |
US5121179A (en) * | 1990-10-08 | 1992-06-09 | Seiko Epson Corporation | Higher impedance pull-up and pull-down input protection resistors for MIS transistor integrated circuits |
US5227327A (en) * | 1989-11-10 | 1993-07-13 | Seiko Epson Corporation | Method for making high impedance pull-up and pull-down input protection resistors for active integrated circuits |
EP0427565A3 (en) * | 1989-11-10 | 1992-03-04 | Seiko Epson Corporation | Integrated circuit having mis transistor |
DE69232257T2 (en) * | 1991-09-30 | 2002-08-08 | Texas Industries Inc | Insulation level controlled by depletion |
Family Cites Families (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3673428A (en) * | 1970-09-18 | 1972-06-27 | Rca Corp | Input transient protection for complementary insulated gate field effect transistor integrated circuit device |
US3967295A (en) * | 1975-04-03 | 1976-06-29 | Rca Corporation | Input transient protection for integrated circuit element |
GB1592856A (en) * | 1976-11-27 | 1981-07-08 | Ferranti Ltd | Semiconductor devices |
JPS5811750B2 (en) * | 1979-06-04 | 1983-03-04 | 株式会社日立製作所 | High voltage resistance element |
JPS57111065A (en) * | 1980-12-27 | 1982-07-10 | Seiko Epson Corp | Mos field effect type semiconductor circuit device |
JPS58119670A (en) * | 1982-01-11 | 1983-07-16 | Nissan Motor Co Ltd | Semiconductor device |
-
1983
- 1983-12-07 JP JP58229915A patent/JPS60123052A/en active Pending
-
1984
- 1984-11-28 KR KR1019840007471A patent/KR850005142A/en not_active Application Discontinuation
- 1984-12-06 IT IT23948/84A patent/IT1178736B/en active
- 1984-12-06 FR FR8418632A patent/FR2556502B1/en not_active Expired
- 1984-12-06 GB GB08430820A patent/GB2152283B/en not_active Expired
- 1984-12-07 DE DE19843444741 patent/DE3444741A1/en not_active Withdrawn
-
1988
- 1988-11-18 SG SG776/88A patent/SG77688G/en unknown
-
1989
- 1989-01-19 HK HK43/89A patent/HK4389A/en unknown
Also Published As
Publication number | Publication date |
---|---|
FR2556502B1 (en) | 1988-07-29 |
HK4389A (en) | 1989-01-27 |
DE3444741A1 (en) | 1985-06-20 |
IT1178736B (en) | 1987-09-16 |
FR2556502A1 (en) | 1985-06-14 |
JPS60123052A (en) | 1985-07-01 |
GB2152283B (en) | 1987-06-17 |
SG77688G (en) | 1989-03-23 |
IT8423948A0 (en) | 1984-12-06 |
KR850005142A (en) | 1985-08-21 |
GB2152283A (en) | 1985-07-31 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
GB2113468B (en) | Integrated gate protection arrangement | |
DE3375811D1 (en) | Gate | |
GB8603080D0 (en) | Protective handcoverings | |
GB2146882B (en) | Barrier | |
GB8313370D0 (en) | Protection method | |
GB8425567D0 (en) | Overhoist prevention | |
GB8319413D0 (en) | Gate assembly unit | |
GB8430820D0 (en) | Gate protection arrangement | |
GB8301439D0 (en) | Protection devices | |
DE3461125D1 (en) | Dust protection | |
GB8323807D0 (en) | Safety gates | |
GB8414512D0 (en) | Safety gate | |
GB8300725D0 (en) | Gate protection circuit | |
GB2151683B (en) | Gate | |
GB2138644B (en) | Power transistor protection | |
GB8424446D0 (en) | Short-circuit protection devices | |
GB8420549D0 (en) | Security arrangement | |
GB8427794D0 (en) | Protection suit | |
GB8329773D0 (en) | Moving gate | |
GB2141770B (en) | Framework gate | |
GB8605384D0 (en) | Gate | |
GB8421319D0 (en) | Protective cases | |
GB8322358D0 (en) | Gate | |
SU1146757A2 (en) | Protection device | |
GB8304407D0 (en) | Safety gate |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
PCNP | Patent ceased through non-payment of renewal fee |
Effective date: 19941206 |