GB8300725D0 - Gate protection circuit - Google Patents

Gate protection circuit

Info

Publication number
GB8300725D0
GB8300725D0 GB838300725A GB8300725A GB8300725D0 GB 8300725 D0 GB8300725 D0 GB 8300725D0 GB 838300725 A GB838300725 A GB 838300725A GB 8300725 A GB8300725 A GB 8300725A GB 8300725 D0 GB8300725 D0 GB 8300725D0
Authority
GB
United Kingdom
Prior art keywords
protection circuit
gate protection
gate
circuit
protection
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
GB838300725A
Other versions
GB2113469A (en
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Nissan Motor Co Ltd
Original Assignee
Nissan Motor Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nissan Motor Co Ltd filed Critical Nissan Motor Co Ltd
Publication of GB8300725D0 publication Critical patent/GB8300725D0/en
Publication of GB2113469A publication Critical patent/GB2113469A/en
Withdrawn legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/0203Particular design considerations for integrated circuits
    • H01L27/0248Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection
    • H01L27/0251Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection for MOS devices
    • H01L27/0288Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection for MOS devices using passive elements as protective elements, e.g. resistors, capacitors, inductors, spark-gaps
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76Unipolar devices, e.g. field effect transistors
    • H01L29/772Field effect transistors
    • H01L29/78Field effect transistors with field effect produced by an insulated gate

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Ceramic Engineering (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
  • Protection Of Static Devices (AREA)
  • Amplifiers (AREA)
  • Semiconductor Integrated Circuits (AREA)
GB08300725A 1982-01-19 1983-01-12 Gate protection circuit for MOSFET Withdrawn GB2113469A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP57005448A JPS58123763A (en) 1982-01-19 1982-01-19 Protective circuit for gate of semiconductor integrated circuit

Publications (2)

Publication Number Publication Date
GB8300725D0 true GB8300725D0 (en) 1983-02-16
GB2113469A GB2113469A (en) 1983-08-03

Family

ID=11611489

Family Applications (1)

Application Number Title Priority Date Filing Date
GB08300725A Withdrawn GB2113469A (en) 1982-01-19 1983-01-12 Gate protection circuit for MOSFET

Country Status (3)

Country Link
JP (1) JPS58123763A (en)
DE (1) DE3243465A1 (en)
GB (1) GB2113469A (en)

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2545527B2 (en) * 1987-01-23 1996-10-23 沖電気工業株式会社 Semiconductor device
US4819047A (en) * 1987-05-15 1989-04-04 Advanced Micro Devices, Inc. Protection system for CMOS integrated circuits
US4835416A (en) * 1987-08-31 1989-05-30 National Semiconductor Corporation VDD load dump protection circuit
US5032742A (en) * 1989-07-28 1991-07-16 Dallas Semiconductor Corporation ESD circuit for input which exceeds power supplies in normal operation
DE4301552A1 (en) * 1993-01-21 1994-07-28 Telefunken Microelectron Integrated power resistor arrangement
KR101040859B1 (en) * 2009-09-02 2011-06-14 삼성모바일디스플레이주식회사 Organic Light Emitting Display Device

Also Published As

Publication number Publication date
DE3243465A1 (en) 1983-07-28
JPS58123763A (en) 1983-07-23
GB2113469A (en) 1983-08-03

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Legal Events

Date Code Title Description
WAP Application withdrawn, taken to be withdrawn or refused ** after publication under section 16(1)