CN107068780B - Method for oxidation prepares the infrared detector and preparation method thereof of titanium oxide heat-sensitive layer - Google Patents
Method for oxidation prepares the infrared detector and preparation method thereof of titanium oxide heat-sensitive layer Download PDFInfo
- Publication number
- CN107068780B CN107068780B CN201710253069.9A CN201710253069A CN107068780B CN 107068780 B CN107068780 B CN 107068780B CN 201710253069 A CN201710253069 A CN 201710253069A CN 107068780 B CN107068780 B CN 107068780B
- Authority
- CN
- China
- Prior art keywords
- layer
- film
- titanium oxide
- titanium
- infrared detector
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 title claims abstract description 49
- OGIDPMRJRNCKJF-UHFFFAOYSA-N titanium oxide Inorganic materials [Ti]=O OGIDPMRJRNCKJF-UHFFFAOYSA-N 0.000 title claims abstract description 49
- 238000000034 method Methods 0.000 title claims abstract description 44
- 230000003647 oxidation Effects 0.000 title claims abstract description 28
- 238000007254 oxidation reaction Methods 0.000 title claims abstract description 28
- 238000002360 preparation method Methods 0.000 title claims abstract description 15
- 239000010410 layer Substances 0.000 claims abstract description 124
- 239000010408 film Substances 0.000 claims abstract description 70
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 claims abstract description 42
- 229910052751 metal Inorganic materials 0.000 claims abstract description 42
- 239000002184 metal Substances 0.000 claims abstract description 42
- 239000010936 titanium Substances 0.000 claims abstract description 42
- 229910052719 titanium Inorganic materials 0.000 claims abstract description 42
- 239000011241 protective layer Substances 0.000 claims abstract description 35
- 239000010409 thin film Substances 0.000 claims abstract description 28
- 239000004065 semiconductor Substances 0.000 claims abstract description 16
- 238000012545 processing Methods 0.000 claims abstract description 15
- 238000000151 deposition Methods 0.000 claims abstract description 12
- 238000005530 etching Methods 0.000 claims description 14
- NJPPVKZQTLUDBO-UHFFFAOYSA-N novaluron Chemical compound C1=C(Cl)C(OC(F)(F)C(OC(F)(F)F)F)=CC=C1NC(=O)NC(=O)C1=C(F)C=CC=C1F NJPPVKZQTLUDBO-UHFFFAOYSA-N 0.000 claims description 14
- 238000001259 photo etching Methods 0.000 claims description 12
- 229910052581 Si3N4 Inorganic materials 0.000 claims description 7
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims description 7
- 229910052760 oxygen Inorganic materials 0.000 claims description 7
- 239000001301 oxygen Substances 0.000 claims description 7
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical group N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims description 7
- 230000005611 electricity Effects 0.000 claims description 6
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims description 4
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 4
- 239000004411 aluminium Substances 0.000 claims description 4
- 229910052782 aluminium Inorganic materials 0.000 claims description 4
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 4
- 229910052802 copper Inorganic materials 0.000 claims description 4
- 239000010949 copper Substances 0.000 claims description 4
- 230000008021 deposition Effects 0.000 claims description 4
- 229910052814 silicon oxide Inorganic materials 0.000 claims description 4
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 claims description 4
- 229910052721 tungsten Inorganic materials 0.000 claims description 4
- 239000010937 tungsten Substances 0.000 claims description 4
- 239000004642 Polyimide Substances 0.000 claims description 3
- 150000002500 ions Chemical class 0.000 claims description 3
- 229920001721 polyimide Polymers 0.000 claims description 3
- 229910004205 SiNX Inorganic materials 0.000 claims description 2
- 229910003481 amorphous carbon Inorganic materials 0.000 claims description 2
- 238000005229 chemical vapour deposition Methods 0.000 claims description 2
- 238000002347 injection Methods 0.000 claims 1
- 239000007924 injection Substances 0.000 claims 1
- 238000004519 manufacturing process Methods 0.000 abstract description 15
- 230000008569 process Effects 0.000 abstract description 6
- 238000001556 precipitation Methods 0.000 abstract description 4
- 238000010586 diagram Methods 0.000 description 9
- 230000008859 change Effects 0.000 description 6
- XHCLAFWTIXFWPH-UHFFFAOYSA-N [O-2].[O-2].[O-2].[O-2].[O-2].[V+5].[V+5] Chemical compound [O-2].[O-2].[O-2].[O-2].[O-2].[V+5].[V+5] XHCLAFWTIXFWPH-UHFFFAOYSA-N 0.000 description 4
- 238000005516 engineering process Methods 0.000 description 4
- 239000000463 material Substances 0.000 description 4
- 229910001935 vanadium oxide Inorganic materials 0.000 description 4
- 230000003446 memory effect Effects 0.000 description 2
- 230000005855 radiation Effects 0.000 description 2
- 238000002310 reflectometry Methods 0.000 description 2
- 239000000523 sample Substances 0.000 description 2
- 230000009286 beneficial effect Effects 0.000 description 1
- 244000309464 bull Species 0.000 description 1
- 238000010276 construction Methods 0.000 description 1
- 230000007812 deficiency Effects 0.000 description 1
- 238000001514 detection method Methods 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 239000003814 drug Substances 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 239000010931 gold Substances 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- 238000011031 large-scale manufacturing process Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 238000012544 monitoring process Methods 0.000 description 1
- 230000005616 pyroelectricity Effects 0.000 description 1
- 238000005057 refrigeration Methods 0.000 description 1
- 230000004044 response Effects 0.000 description 1
- 238000010186 staining Methods 0.000 description 1
- 229910052720 vanadium Inorganic materials 0.000 description 1
- LEONUFNNVUYDNQ-UHFFFAOYSA-N vanadium atom Chemical compound [V] LEONUFNNVUYDNQ-UHFFFAOYSA-N 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
- H01L31/10—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors characterised by potential barriers, e.g. phototransistors
- H01L31/101—Devices sensitive to infrared, visible or ultraviolet radiation
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
- G01J5/00—Radiation pyrometry, e.g. infrared or optical thermometry
- G01J5/10—Radiation pyrometry, e.g. infrared or optical thermometry using electric radiation detectors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0224—Electrodes
- H01L31/022408—Electrodes for devices characterised by at least one potential jump barrier or surface barrier
- H01L31/022425—Electrodes for devices characterised by at least one potential jump barrier or surface barrier for solar cells
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0232—Optical elements or arrangements associated with the device
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
- H01L31/0256—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by the material
- H01L31/0264—Inorganic materials
- H01L31/032—Inorganic materials including, apart from doping materials or other impurities, only compounds not provided for in groups H01L31/0272 - H01L31/0312
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
Landscapes
- Engineering & Computer Science (AREA)
- General Physics & Mathematics (AREA)
- Physics & Mathematics (AREA)
- Power Engineering (AREA)
- Electromagnetism (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Manufacturing & Machinery (AREA)
- Spectroscopy & Molecular Physics (AREA)
- Life Sciences & Earth Sciences (AREA)
- Sustainable Development (AREA)
- Sustainable Energy (AREA)
- Chemical & Material Sciences (AREA)
- Inorganic Chemistry (AREA)
- Photometry And Measurement Of Optical Pulse Characteristics (AREA)
Abstract
The present invention relates to the infrared detectors that a kind of method for oxidation prepares titanium oxide heat-sensitive layer, the middle part of its supporting layer is equipped with thin film of titanium oxide, thin film of titanium oxide is semiconductor, it connects metal and the two sides of supporting layer are equipped with the titanium film that same layer is in thin film of titanium oxide, the titanium film is equipped with the first protective layer, thin film of titanium oxide and the first protective layer are equipped with the second protective layer, further relate to the preparation method of above-mentioned detector, include the steps that being sequentially depositing titanium film and the first protective layer on supporting layer, remove supermedial first protection layer film, the titanium film exposed on middle part is aoxidized, form thin film of titanium oxide, the step of as temperature-sensitive layer film, the Direct precipitation titanium film on supporting layer, and oxidation processes are carried out to the titanium film of central region, it is allowed to be changed into thin film of titanium oxide, as temperature-sensitive layer film, it is individually heavy not need The technique of product metal electrode layer, can significantly simplify processing step, improve production capacity.
Description
Technical field
The invention belongs to the MEMS technique manufacturing fields in semiconductor technology, and in particular to a kind of method for oxidation system
The infrared detector and preparation method thereof of standby titanium oxide heat-sensitive layer.
Background technique
Uncooled infrared detection technology is that the infra-red radiation (IR) of external object is perceived and turned without refrigeration system
Electric signal is melted into after processing in the technology of display terminal output, can be widely applied to national defence, space flight, medicine, production monitoring etc.
Various fields.Non-refrigerated infrared focal plane probe has light weight, volume since it can work under room temperature state
Small, the advantages that service life is long, at low cost, power is small, starting is fast and stability is good, meets civilian infrared system and part is military red
There is an urgent need to development is swift and violent in recent years to Long Wave Infrared Probe for external system.Non-refrigerated infrared detector mainly includes surveying
Bolometer, pyroelectricity and thermopile detector etc., wherein the heat of the microbolometer based on MEMS (MEMS) manufacturing process
(Micro-bolometer) infrared detector is counted due to its speed of response height, manufacture craft it is simple and with IC manufacturing work
Skill is compatible, has lower cross-talk and lower 1/f noise, higher frame speed, work is not necessarily to chopper, convenient for large-scale production
The advantages that, it is one of mainstream technology of non-refrigerated infrared detector.
Micro-metering bolometer (Micro-bolometer) be based on the material with sensitive characteristic when temperature changes
A kind of non-refrigerated infrared detector of corresponding variation and manufacture occurs for resistance value.To the heat being supported on heat insulating construction when work
Quick resistance both ends apply fixed bias voltage or current source, and temperature change caused by incident IR radiation hinders thermistor
Value reduces, so that electric current, voltage be made to change, and the variation of electric signal is read by reading circuit (ROIC).As temperature-sensitive electricity
The material of resistance must temperature-coefficient of electrical resistance (TCR) with higher, lower 1/f noise, resistance value appropriate and stable electricity
It performance and easily prepared etc. requires.
Typically now use vanadium oxide as thermosensitive film, but vanadium oxide thermosensitive film and integrated circuit fabrication process
Compatibility is bad, and factory worries that vanadium oxide material and vanadium material stain equipment, needs to carry out single equipment after vanadium oxide technique
It solely configures and is isolated, prevent from staining other products and process equipment.
In addition, being generally electrically connected in the prior art by deposit metal electrodes with heat-sensitive layer film, heat-sensitive layer is experienced
Temperature change be transmitted on the reading circuit of pedestal, it is also necessary to metal electrode layer is handled by photoetching or etching portions of patterned,
Technique is cumbersome, and production capacity is lower.And thermosensitive film is either first deposited, redeposited electrode, or first depositing electrode, temperature-sensitive is deposited afterwards
Film, neither in one plane, as soon as more planes, influence flatness bull point.In prior art, electrode and heat
The contact of sensitive film is deposited using different films, and the two area overlapping part forms electricity interconnection by contact hole, is overlapped
Area be not utilized effectively.
Summary of the invention
The present invention is directed to the deficiencies in the prior art, provides a kind of method for oxidation and prepares the infrared of titanium oxide heat-sensitive layer
Detector uses titanium oxide as temperature-sensitive layer film, the pure titanium layer of Direct precipitation, and the pure titanium positioned at middle part is made to be converted into oxidation
Titanium, as temperature-sensitive layer film, the pure titanium positioned at two sides replaces metal electrode in the prior art, simple process, and production capacity is higher.
The technical solution that above-mentioned technical problem is solved in the present invention is as follows: method for oxidation prepares the infrared of titanium oxide heat-sensitive layer
Detector, the semiconductor pedestal for having reading circuit including one and the detector body being electrically connected with the semiconductor pedestal, institute
Stating detector body includes metallic reflector, insulating medium layer and supporting layer, and the semiconductor pedestal is equipped with metallic reflector
And insulating medium layer, the metallic reflector include several metal blocks；
The insulating medium layer is equipped with supporting layer, and the supporting layer is equipped with anchor point hole and through-hole, and the through-hole terminates
In the metal block, filled with connection metal in the anchor point hole and the through-hole, the middle part of the supporting layer is equipped with titanium oxide
Film, the thin film of titanium oxide are semiconductor, and the two sides of the thin film of titanium oxide, which are equipped with, is in the titanium film on same layer with it,
And the titanium film of two sides is located on the connection metal and the supporting layer of two sides, the titanium film is equipped with first and protects
Sheath, the thin film of titanium oxide and first protective layer are equipped with the second protective layer.
Further, the connection metal is aluminium, copper or tungsten.
Further, the insulating medium layer be silicon nitride film or silicon oxide film, with a thickness of
In the present invention method for oxidation prepare the infrared detector of titanium oxide heat-sensitive layer the utility model has the advantages that
(1) it uses thin film of titanium oxide as temperature-sensitive layer film, there is preferable stability, resistance resume speed is fast, resistance
Memory effect is few；
(2) effective area of thermosensitive film is increased, filling rate is increased, the Direct precipitation titanium film on supporting layer, and
Oxidation processes are carried out to the titanium film at middle part, are allowed to be changed into thin film of titanium oxide, as temperature-sensitive layer film, and the titanium film of two sides
It is then equivalent to metal electrode in the prior art, the technique for not needing independent deposit metal electrodes layer, without to metal electrode
Layer carries out photoetching and etching, can significantly simplify processing step, saves cost, improves production capacity.
The invention further relates to the preparation methods that above-mentioned method for oxidation prepares the infrared detector of titanium oxide heat-sensitive layer, including with
Lower step:
Step 1: making metallic reflector on comprising reading circuit semiconductor pedestal, and figure is carried out to metallic reflector
Change processing, it is graphical after metallic reflector form several metal blocks；Reading electricity on the metal block and semiconductor pedestal
Road electrical connection；Then, insulating medium layer is deposited on completing patterned metal reflecting layer；
Step 2: the deposited sacrificial layer on the insulating medium layer, and processing is patterned to sacrificial layer, in figure
Change and form anchor point hole on treated sacrificial layer, and the depositing support layer on the sacrificial layer after graphical treatment；
Step 3: using the method for photoetching and etching, etching away part supporting layer, supporting layer etch-stop is in the metal
Block forms through-hole, in the through-hole and anchor point inner hole deposition product connection metal；
Step 4: depositing titanium film on supporting layer, and deposit the first protective layer in titanium film；
Step 5: processing being patterned to the first protective layer, by photoetching, removes the first protection layer film at middle part, dew
The titanium film at middle part out, and it is aoxidized, so that titanium film is changed into thin film of titanium oxide, the thin film of titanium oxide is partly to lead
Body；
Step 6: the second protective layer is deposited on the first protective layer and thin film of titanium oxide；
Step 7: using the method for photoetching and etching, processing, the second etching protection layer being patterned to the second protective layer
Sacrificial layer is terminated at, then, carries out structure release, removes sacrificial layer and forms micro-bridge structure.
Beneficial effects of the present invention:
(1) it uses thin film of titanium oxide as temperature-sensitive layer film, there is preferable stability, resistance resume speed is fast, resistance
Memory effect is few；
(2) manufacturing process of thin film of titanium oxide is compatible with CMOS processing procedure, without arranging special machine because of pollution problem
Production capacity and efficiency is substantially improved in platform；
(3) effective area of thermosensitive film is increased, filling rate is increased, the Direct precipitation titanium film on supporting layer, and
Oxidation processes are carried out to the titanium film for being located at middle part, are allowed to be changed into thin film of titanium oxide, as temperature-sensitive layer film, and are located at two sides
Titanium film be then equivalent to metal electrode in the prior art, the technique for not needing independent deposit metal electrodes layer, without right
Metal electrode layer carries out photoetching and etching, can significantly simplify processing step, saves cost, improves production capacity；
(4) deposit metal electrodes layer, the deposition of a few plane, it will be able to further increase the flat of detector are not had to
Degree, effectively promotion manufacturing yield.
Further, metallic reflector with a thickness ofMetallic reflector is 8~14 μm infrared to wavelength
The reflectivity of light is 99% or more.
Further, the sacrificial layer is polyimides or amorphous carbon, with a thickness of 1.0~2.5 μm.
Further, the supporting layer is silicon nitride film, with a thickness of
Further, first protective layer and the second protective layer are formed using chemical vapor deposition low stress SiNx
's.
Further, in step 5, the titanium film for being located at middle part is aoxidized, method for oxidation includes being passed through oxygen to keep titanium thin
Film oxidation and ion implanting oxygen make titanium film aoxidize two ways.
Detailed description of the invention
Fig. 1 is that metallic reflector and insulating medium layer form schematic diagram in the present invention；
Fig. 2 is that sacrificial layer and supporting layer form schematic diagram in the present invention；
Fig. 3 is that through-hole forms schematic diagram in the present invention；
Fig. 4 is that filling hole with metal schematic diagram is connected in the present invention；
Fig. 5 is that titanium film forms schematic diagram in the present invention；
Fig. 6 be the present invention in the first protective layer graphically after schematic diagram；
Fig. 7 is that the second protective layer forms schematic diagram in the present invention；
Fig. 8 is the second protective layer graphical schematic diagram in the present invention；
Fig. 9 is panel detector structure schematic diagram in the present invention；
In the accompanying drawings, list of designations represented by each label is as follows: 1, semiconductor pedestal, 2, metallic reflector, 2-
1, metal block, 3, insulating medium layer, 4, sacrificial layer, 5, supporting layer, 6, anchor point hole, 7, through-hole, 8, connection metal, 9, titanium film,
10, the first protective layer, 11, thin film of titanium oxide, the 12, second protective layer.
Specific embodiment
Below in conjunction with attached drawing in the present invention principle and feature be described, the given examples are served only to explain the present invention,
It is not intended to limit the scope of the present invention.
Method for oxidation in the present invention prepares the infrared detector of titanium oxide heat-sensitive layer, as shown in figure 9, prepared by method for oxidation
The infrared detector of titanium oxide heat-sensitive layer, including a semiconductor pedestal 1 with reading circuit and with 1 electricity of the semiconductor pedestal
The detector body of connection, the detector body include metallic reflector 2, insulating medium layer 3 and supporting layer 5, described partly to lead
Body pedestal 1 is equipped with metallic reflector 2 and insulating medium layer 3, and the metallic reflector 2 includes several metal blocks 2-1；
The insulating medium layer 3 is equipped with supporting layer 5, and the supporting layer 5 is equipped with anchor point hole and through-hole, and the through-hole is whole
The metal block 2-1 is terminated in, connection metal 8 is filled in the anchor point hole and the through-hole, the middle part of the supporting layer 5 is equipped with
Thin film of titanium oxide 11, the thin film of titanium oxide 11 are semiconductor, and the two sides of the thin film of titanium oxide 11 are equipped with titanium film 9, and institute
It states on the two sides and connection metal 8 that titanium film 9 is located on the supporting layer 5, the titanium film 9 is equipped with the first protective layer 10,
The thin film of titanium oxide 11 and first protective layer 10 are equipped with the second protective layer 12.The connection metal 8 be aluminium, copper or
Tungsten, the insulating medium layer 3 be silicon nitride film or silicon oxide film, with a thickness of
The invention further relates to the preparation methods that above-mentioned method for oxidation prepares the infrared detector of titanium oxide heat-sensitive layer, such as Fig. 1-
Shown in Fig. 9, method for oxidation prepares the preparation method of the infrared detector of titanium oxide heat-sensitive layer, comprising the following steps:
Step 1: being carried out comprising making metallic reflector 2 on reading circuit semiconductor pedestal 1, and to metallic reflector 2
Graphical treatment, it is graphical after metallic reflector 2 form several metal blocks 2-1；The metal block 2-1 and semiconductor pedestal
Reading circuit electrical connection on 1；Then, insulating medium layer 3, metallic reflector 2 are deposited on completing patterned metal reflecting layer 2
With a thickness ofThe reflectivity for the infrared light that metallic reflector 2 is 8~14 μm to wavelength is 99% or more, institute
The insulating medium layer 3 stated be silicon nitride film or silicon oxide film, with a thickness ofAs shown in Figure 1.
Step 2: the deposited sacrificial layer 4 on the insulating medium layer 3, and processing is patterned to sacrificial layer 4, scheming
Anchor point hole 6, depositing support layer 5 on the sacrificial layer 4 after graphical treatment, the branch are formed on shapeization treated sacrificial layer 4
Support layer 5 is silicon nitride film, and the sacrificial layer 4 is polyimides, the sacrificial layer 4 with a thickness of 1.0~2.5 μm, the branch
Support layer 5 with a thickness of As shown in Figure 2.
Step 3: using the method for photoetching and etching, etching away part supporting layer 5,5 etch-stop of supporting layer is in the gold
Belong to block 2-1, forms through-hole 7, as shown in Figure 3；Deposition connection metal 8, the connection metal 8 in the through-hole 7 and anchor point hole 6
For aluminium, copper or tungsten, as shown in Figure 4.
Step 4: titanium film 9 is deposited on supporting layer 5, as shown in figure 5, and depositing the first protective layer 10 in titanium film 9.
Step 5:, processing is patterned to the first protective layer 10, by photoetching, removal is located at first protective layer at middle part
10 films expose the titanium film 9 for being located at middle part, and are passed through oxygen to it and aoxidize or carry out oxygen by ion implanting oxygen
Change, so that titanium film is changed into thin film of titanium oxide 11, as shown in Figure 6；
Step 6: the second protective layer 12 is deposited on the first protective layer 10 and thin film of titanium oxide 11, as shown in Figure 7.
Step 7: using the method for photoetching and etching, processing being patterned to the second protective layer 12, as shown in Figure 8；The
Two protective layers, 12 etch-stop is in sacrificial layer 4, then, carries out structure release, removes sacrificial layer 4 and forms micro-bridge structure, such as Fig. 9 institute
Show.
The foregoing is merely presently preferred embodiments of the present invention, is not intended to limit the invention, it is all in spirit of the invention and
Within principle, any modification, equivalent replacement, improvement and so on be should all be included in the protection scope of the present invention.
Claims (8)
1. the preparation method that a kind of method for oxidation prepares the infrared detector of titanium oxide heat-sensitive layer, which is characterized in that including following
Step:
Step 1: making metallic reflector on comprising reading circuit semiconductor pedestal, and place is patterned to metallic reflector
Reason, it is graphical after metallic reflector form several metal blocks；Reading circuit electricity on the metal block and semiconductor pedestal
Connection；Then, insulating medium layer is deposited on completing patterned metal reflecting layer, and place is patterned to insulating medium layer
Reason, and expose metal block；
Step 2: the deposited sacrificial layer on the insulating medium layer, and processing is patterned to sacrificial layer, graphically locating
Anchor point hole, and depositing support layer on the sacrificial layer after graphical treatment are formed on sacrificial layer after reason；
Step 3: using the method for photoetching and etching, etching away part supporting layer, supporting layer etch-stop is in the metal block, shape
At through-hole, in the through-hole and anchor point inner hole deposition product connection metal；
Step 4: depositing titanium film on supporting layer, and deposit the first protective layer in titanium film；
Step 5: processing being patterned to the first protective layer, by photoetching, removes the first protection layer film at middle part, in exposing
The titanium film in portion, and it is aoxidized, so that the titanium film at middle part is changed into thin film of titanium oxide, the thin film of titanium oxide is partly to lead
Body；
Step 6: the second protective layer is deposited on the first protective layer and thin film of titanium oxide；
Step 7: using the method for photoetching and etching, processing being patterned to the second protective layer, the second etching protection layer terminates
In sacrificial layer, then, structure release is carried out, removes sacrificial layer and form micro-bridge structure.
2. method for oxidation according to claim 1 prepares the preparation method of the infrared detector of titanium oxide heat-sensitive layer, special
Sign is, metallic reflector with a thickness ofThe reflection for the infrared light that metallic reflector is 8~14 μm to wavelength
Rate is 99% or more.
3. method for oxidation according to claim 1 prepares the preparation method of the infrared detector of titanium oxide heat-sensitive layer, special
Sign is that the sacrificial layer is polyimides or amorphous carbon, with a thickness of 1.0~2.5 μm.
4. method for oxidation according to claim 1 prepares the preparation method of the infrared detector of titanium oxide heat-sensitive layer, special
Sign is that the supporting layer is silicon nitride film, with a thickness of
5. method for oxidation according to claim 1 prepares the preparation method of the infrared detector of titanium oxide heat-sensitive layer, special
Sign is that first protective layer and the second protective layer are formed using chemical vapor deposition low stress SiNx.
6. method for oxidation according to claim 1 prepares the preparation method of the infrared detector of titanium oxide heat-sensitive layer, special
Sign is, in step 5, aoxidizes to the titanium film at middle part, and method for oxidation includes being passed through oxygen to make titanium film oxidation and ion
Injection oxygen makes titanium film aoxidize two ways.
7. the preparation side that method for oxidation according to claim 1-6 prepares the infrared detector of titanium oxide heat-sensitive layer
Method, which is characterized in that the connection metal is aluminium, copper or tungsten.
8. the preparation side that method for oxidation according to claim 1-6 prepares the infrared detector of titanium oxide heat-sensitive layer
Method, which is characterized in that the insulating medium layer be silicon nitride film or silicon oxide film, with a thickness of
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201710253069.9A CN107068780B (en) | 2017-04-18 | 2017-04-18 | Method for oxidation prepares the infrared detector and preparation method thereof of titanium oxide heat-sensitive layer |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201710253069.9A CN107068780B (en) | 2017-04-18 | 2017-04-18 | Method for oxidation prepares the infrared detector and preparation method thereof of titanium oxide heat-sensitive layer |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN107068780A CN107068780A (en) | 2017-08-18 |
| CN107068780B true CN107068780B (en) | 2019-04-12 |
Family
ID=59600729
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201710253069.9A Active CN107068780B (en) | 2017-04-18 | 2017-04-18 | Method for oxidation prepares the infrared detector and preparation method thereof of titanium oxide heat-sensitive layer |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN107068780B (en) |
Families Citing this family (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN107634122A (en) * | 2017-08-31 | 2018-01-26 | 中国科学院宁波材料技术与工程研究所 | It is a kind of aoxidize Ti passivation preparation method and prepare solar cell using this method |
| CN108640080B (en) * | 2018-04-09 | 2020-10-02 | 上海集成电路研发中心有限公司 | Method for forming metal electrode of detector |
| CN113791048A (en) * | 2021-09-13 | 2021-12-14 | 上海翼捷工业安全设备股份有限公司 | MEMS infrared light source and preparation method thereof |
Family Cites Families (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101656273B (en) * | 2008-08-18 | 2011-07-13 | 中芯国际集成电路制造(上海)有限公司 | Selective emitter solar battery unit and manufacturing method thereof |
| CN102393252B (en) * | 2011-09-29 | 2013-01-16 | 电子科技大学 | Two-layer micrometering bolometer and manufacturing method thereof |
| CN106098846B (en) * | 2016-06-29 | 2017-09-05 | 烟台睿创微纳技术股份有限公司 | One kind is used for non-refrigerated infrared detector and refers to pixel and its manufacture method |
| CN106340561A (en) * | 2016-09-29 | 2017-01-18 | 烟台睿创微纳技术股份有限公司 | Novel uncooled infrared focal plane detector pixel and fabrication method thereof |
-
2017
- 2017-04-18 CN CN201710253069.9A patent/CN107068780B/en active Active
Also Published As
| Publication number | Publication date |
|---|---|
| CN107068780A (en) | 2017-08-18 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN103715307B (en) | A kind of non-refrigerated infrared detector and preparation method thereof | |
| CN106352989B (en) | A kind of production method and structure of non-refrigerated infrared focal plane probe microbridge | |
| CN107150995B (en) | A kind of polarization sensitive non-refrigerated infrared detector and preparation method thereof | |
| CN106847950B (en) | Ion implanting prepares infrared detector of Titanium oxide electrode and preparation method thereof | |
| CN107068780B (en) | Method for oxidation prepares the infrared detector and preparation method thereof of titanium oxide heat-sensitive layer | |
| US3962578A (en) | Two-color photoelectric detectors having an integral filter | |
| US7541582B2 (en) | Method for production of a device for thermal detection of radiation comprising an active microbolometer and a passive microbolometer | |
| CN106298827B (en) | A kind of non-refrigerated infrared focal plane probe pixel and preparation method thereof | |
| KR100925214B1 (en) | Bolometer and manufacturing method thereof | |
| CN106784165B (en) | A kind of novel double-layer non-refrigerated infrared focal plane probe dot structure and preparation method thereof | |
| CN106124066B (en) | A kind of microbolometer and preparation method of high fill factor | |
| CN107101728B (en) | A kind of double-colored polarized ir detector of non-brake method and its manufacturing method | |
| US9261411B2 (en) | Uncooled microbolometer detector and array for terahertz detection | |
| US20140091217A1 (en) | Microbolometer detector with centrally-located support structure | |
| EP3522217B1 (en) | Method to prepare pixel for uncooled infrared focal plane detector | |
| CN103199097A (en) | Pixel element structure and non-refrigeration infrared focal plane detector based on pixel element structure | |
| CN106340561A (en) | Novel uncooled infrared focal plane detector pixel and fabrication method thereof | |
| CN107055464A (en) | A kind of method for using amorphous carbon to make micro-metering bolometer micro-bridge structure as sacrifice layer | |
| CN106672891A (en) | Double-layer uncooled infrared detector structure and preparation method thereof | |
| CN103855238B (en) | A kind of back of the body incident immersion thermosensitive film type Infrared Detectors | |
| US20140097343A1 (en) | Spectroscopic Detector And Corresponding Method | |
| CN203269550U (en) | Tower-type anchor of uncooled infrared detector | |
| CN104112753A (en) | Infrared detector and infrared imaging system, and preparation methods thereof | |
| CN106800271B (en) | A kind of non-refrigerated infrared focal plane probe dot structure and preparation method thereof | |
| CN203774352U (en) | Back-incident immersed type thermosensitive film infrared detector |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PB01 | Publication | ||
| PB01 | Publication | ||
| SE01 | Entry into force of request for substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| GR01 | Patent grant | ||
| GR01 | Patent grant | ||
| PE01 | Entry into force of the registration of the contract for pledge of patent right | ||
| PE01 | Entry into force of the registration of the contract for pledge of patent right |
Denomination of invention: Infrared detector for preparing titanium oxide thermal sensitive layer by oxidation method and its preparation method Effective date of registration: 20211228 Granted publication date: 20190412 Pledgee: Yantai Branch of China Merchants Bank Co.,Ltd. Pledgor: YANTAI RAYTRON TECHNOLOGY Co.,Ltd. Registration number: Y2021980016546 |
|
| PC01 | Cancellation of the registration of the contract for pledge of patent right |
Date of cancellation: 20230106 Granted publication date: 20190412 Pledgee: Yantai Branch of China Merchants Bank Co.,Ltd. Pledgor: YANTAI RAYTRON TECHNOLOGY Co.,Ltd. Registration number: Y2021980016546 |
|
| PC01 | Cancellation of the registration of the contract for pledge of patent right | ||
| PE01 | Entry into force of the registration of the contract for pledge of patent right |
Denomination of invention: Infrared detector for preparing titanium oxide thermosensitive layer by oxidation method and its preparation method Effective date of registration: 20230113 Granted publication date: 20190412 Pledgee: Yantai Branch of China Merchants Bank Co.,Ltd. Pledgor: YANTAI RAYTRON TECHNOLOGY Co.,Ltd. Registration number: Y2023980031039 |
|
| PE01 | Entry into force of the registration of the contract for pledge of patent right | ||
| PC01 | Cancellation of the registration of the contract for pledge of patent right |
Granted publication date: 20190412 Pledgee: Yantai Branch of China Merchants Bank Co.,Ltd. Pledgor: YANTAI RAYTRON TECHNOLOGY Co.,Ltd. Registration number: Y2023980031039 |
|
| PC01 | Cancellation of the registration of the contract for pledge of patent right |