CN107055464A - A kind of method for using amorphous carbon to make micro-metering bolometer micro-bridge structure as sacrifice layer - Google Patents
A kind of method for using amorphous carbon to make micro-metering bolometer micro-bridge structure as sacrifice layer Download PDFInfo
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- CN107055464A CN107055464A CN201710037813.1A CN201710037813A CN107055464A CN 107055464 A CN107055464 A CN 107055464A CN 201710037813 A CN201710037813 A CN 201710037813A CN 107055464 A CN107055464 A CN 107055464A
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- 238000000034 method Methods 0.000 title claims abstract description 54
- 229910003481 amorphous carbon Inorganic materials 0.000 title claims abstract description 33
- 229910052751 metal Inorganic materials 0.000 claims abstract description 43
- 239000002184 metal Substances 0.000 claims abstract description 43
- 238000000151 deposition Methods 0.000 claims abstract description 17
- 238000002161 passivation Methods 0.000 claims abstract description 14
- 230000008569 process Effects 0.000 claims abstract description 14
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 claims abstract description 11
- 229910052721 tungsten Inorganic materials 0.000 claims abstract description 11
- 239000010937 tungsten Substances 0.000 claims abstract description 11
- 230000008021 deposition Effects 0.000 claims abstract description 9
- 238000004380 ashing Methods 0.000 claims abstract description 8
- 239000000758 substrate Substances 0.000 claims abstract description 6
- 238000001020 plasma etching Methods 0.000 claims abstract description 5
- 239000010410 layer Substances 0.000 claims description 184
- 239000010408 film Substances 0.000 claims description 38
- 238000005240 physical vapour deposition Methods 0.000 claims description 23
- 230000015572 biosynthetic process Effects 0.000 claims description 11
- 238000002360 preparation method Methods 0.000 claims description 9
- 239000010409 thin film Substances 0.000 claims description 8
- 229910052581 Si3N4 Inorganic materials 0.000 claims description 6
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 6
- 238000005229 chemical vapour deposition Methods 0.000 claims description 6
- 238000005530 etching Methods 0.000 claims description 6
- 150000004767 nitrides Chemical class 0.000 claims description 6
- 229910052710 silicon Inorganic materials 0.000 claims description 6
- 239000010703 silicon Substances 0.000 claims description 6
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims description 6
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 5
- 238000010884 ion-beam technique Methods 0.000 claims description 5
- 238000001259 photo etching Methods 0.000 claims description 5
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims description 4
- 239000001301 oxygen Substances 0.000 claims description 4
- 229910052760 oxygen Inorganic materials 0.000 claims description 4
- XHCLAFWTIXFWPH-UHFFFAOYSA-N [O-2].[O-2].[O-2].[O-2].[O-2].[V+5].[V+5] Chemical group [O-2].[O-2].[O-2].[O-2].[O-2].[V+5].[V+5] XHCLAFWTIXFWPH-UHFFFAOYSA-N 0.000 claims description 3
- 230000005611 electricity Effects 0.000 claims description 3
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 claims description 3
- 239000011241 protective layer Substances 0.000 claims description 3
- 229910001935 vanadium oxide Inorganic materials 0.000 claims description 3
- 230000008859 change Effects 0.000 claims description 2
- 239000000377 silicon dioxide Substances 0.000 claims description 2
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 claims 1
- 239000010931 gold Substances 0.000 claims 1
- 229910052737 gold Inorganic materials 0.000 claims 1
- 238000007517 polishing process Methods 0.000 claims 1
- 238000004064 recycling Methods 0.000 claims 1
- 230000000994 depressogenic effect Effects 0.000 abstract description 5
- 238000010586 diagram Methods 0.000 description 8
- 238000004528 spin coating Methods 0.000 description 7
- 238000005516 engineering process Methods 0.000 description 6
- 238000004519 manufacturing process Methods 0.000 description 5
- 239000004642 Polyimide Substances 0.000 description 3
- 239000000463 material Substances 0.000 description 3
- 230000003287 optical effect Effects 0.000 description 3
- 229920001721 polyimide Polymers 0.000 description 3
- CURLTUGMZLYLDI-UHFFFAOYSA-N Carbon dioxide Chemical compound O=C=O CURLTUGMZLYLDI-UHFFFAOYSA-N 0.000 description 2
- 238000010521 absorption reaction Methods 0.000 description 2
- 238000010276 construction Methods 0.000 description 2
- 238000001514 detection method Methods 0.000 description 2
- 150000002500 ions Chemical class 0.000 description 2
- 230000005855 radiation Effects 0.000 description 2
- 230000035945 sensitivity Effects 0.000 description 2
- -1 2-1 Substances 0.000 description 1
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 1
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 229910052799 carbon Inorganic materials 0.000 description 1
- 229910002092 carbon dioxide Inorganic materials 0.000 description 1
- 239000001569 carbon dioxide Substances 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 230000007812 deficiency Effects 0.000 description 1
- NAPSCFZYZVSQHF-UHFFFAOYSA-N dimantine Chemical compound CCCCCCCCCCCCCCCCCCN(C)C NAPSCFZYZVSQHF-UHFFFAOYSA-N 0.000 description 1
- 229950010007 dimantine Drugs 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 239000007789 gas Substances 0.000 description 1
- 239000001257 hydrogen Substances 0.000 description 1
- 229910052739 hydrogen Inorganic materials 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- 238000011031 large-scale manufacturing process Methods 0.000 description 1
- 239000012528 membrane Substances 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 238000012544 monitoring process Methods 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 238000005498 polishing Methods 0.000 description 1
- 238000001556 precipitation Methods 0.000 description 1
- 230000005616 pyroelectricity Effects 0.000 description 1
- 238000005057 refrigeration Methods 0.000 description 1
- 230000004044 response Effects 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 229910052814 silicon oxide Inorganic materials 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 238000006467 substitution reaction Methods 0.000 description 1
- 238000012876 topography Methods 0.000 description 1
Classifications
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
- B81C1/00—Manufacture or treatment of devices or systems in or on a substrate
- B81C1/00436—Shaping materials, i.e. techniques for structuring the substrate or the layers on the substrate
- B81C1/00444—Surface micromachining, i.e. structuring layers on the substrate
- B81C1/00468—Releasing structures
- B81C1/00476—Releasing structures removing a sacrificial layer
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
- B81C1/00—Manufacture or treatment of devices or systems in or on a substrate
- B81C1/00015—Manufacture or treatment of devices or systems in or on a substrate for manufacturing microsystems
- B81C1/00023—Manufacture or treatment of devices or systems in or on a substrate for manufacturing microsystems without movable or flexible elements
- B81C1/00095—Interconnects
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
- B81C1/00—Manufacture or treatment of devices or systems in or on a substrate
- B81C1/00015—Manufacture or treatment of devices or systems in or on a substrate for manufacturing microsystems
- B81C1/00023—Manufacture or treatment of devices or systems in or on a substrate for manufacturing microsystems without movable or flexible elements
- B81C1/00103—Structures having a predefined profile, e.g. sloped or rounded grooves
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
- B81C1/00—Manufacture or treatment of devices or systems in or on a substrate
- B81C1/00436—Shaping materials, i.e. techniques for structuring the substrate or the layers on the substrate
- B81C1/00555—Achieving a desired geometry, i.e. controlling etch rates, anisotropy or selectivity
- B81C1/00611—Processes for the planarisation of structures
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
- G01J5/00—Radiation pyrometry, e.g. infrared or optical thermometry
- G01J5/10—Radiation pyrometry, e.g. infrared or optical thermometry using electric radiation detectors
- G01J5/20—Radiation pyrometry, e.g. infrared or optical thermometry using electric radiation detectors using resistors, thermistors or semiconductors sensitive to radiation, e.g. photoconductive devices
- G01J5/22—Electrical features thereof
- G01J5/24—Use of specially adapted circuits, e.g. bridge circuits
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- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Chemical & Material Sciences (AREA)
- Analytical Chemistry (AREA)
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Spectroscopy & Molecular Physics (AREA)
- Geometry (AREA)
- Photometry And Measurement Of Optical Pulse Characteristics (AREA)
Abstract
The present invention relates to a kind of method for using amorphous carbon to make micro-metering bolometer micro-bridge structure as sacrifice layer, it is included in and includes reading circuit to make metallic reflector on the wafer of substrate, insulating medium layer is sequentially depositing on metallic reflector, sacrifice layer, supporting layer, metal electrode layer, electrode protecting layer, heat-sensitive layer and passivation layer, the sacrifice layer uses amorphous carbon film, processing is patterned to the sacrifice layer, form anchor point hole, and planarization process is carried out to amorphous carbon sacrificial layer surface using CMP process, structure is more smooth, support layer and insulating medium layer are removed in anchor point bottom hole portion, expose following metal derby, form through hole, using depressed place plug process in through hole and anchor point inner hole deposition product tungsten, it is electrically connected more stable, utilize plasma ashing or plasma etching, remove sacrifice layer, structure release is more thorough.
Description
Technical field
Field is manufactured the invention belongs to the MEMS technique in semiconductor technology, and in particular to one kind uses amorphous carbon
The method that micro-metering bolometer micro-bridge structure is made as sacrifice layer.
Background technology
Micro-metering bolometer (Micro-bolometer) be based on the material with sensitive characteristic when temperature changes
A kind of thermal detector that resistance value occurs corresponding change and manufactured.
Uncooled infrared detection technology is perceived and turned without the infra-red radiation (IR) of refrigeration system object to external world
The technology that electric signal is exported after processing in display terminal is melted into, national defence, space flight, medical science, production monitoring etc. is can be widely applied to
Various fields.Non-refrigerated infrared detector mainly includes bolometer, pyroelectricity and thermopile detector etc., wherein being based on
The micro-metering bolometer infrared detector of MEMS (MEMS) manufacturing process is high due to its speed of response, and manufacture craft is simple
And it is compatible with integrated circuit fabrication process, with relatively low cross-talk and relatively low 1/f noise, higher frame speed, work need not be cut
Ripple device, the advantages of being easy to large-scale production, is one of mainstream technology of non-refrigerated infrared detector.
The infrared or terahertz emission detection process of micro-metering bolometer, mainly by hanging micro-bridge structure come complete
Into, so the microbridge manufacture of micro-metering bolometer is the key factor for determining its performance.It utilizes sacrificial layer release process shape
Into microbridge supporting construction, the thermo-sensitive material in support platform is connected by microbridge with substrate reading circuit.Sacrificial layer thickness is light
Learn resonator height：Cavity can also strengthen device to infra-red radiation or Terahertz spoke in addition to playing heat insulation effect
The absorption (absorption coefficient may be up to 90%) penetrated, and the wave band that positioning devices absorb to infrared or Terahertz.Therefore sacrifice layer
Thickness is designed as λ/4n (λ is infrared waves or THz wave wavelength, and n is n=1 in the refractive index of cavity dielectric, vacuum), and λ/4n makes
Cavity resonance, which absorbs, to be strengthened.
In order that infrared or terahertz detector has higher sensitivity (Sensitivity) and relatively low noise
(Noise), this requires sacrifice layer to have accurate height, so as to provide accurate optical resonator height.Sacrifice layer is formed
Afterwards, in addition it is also necessary to make sandwich construction on its basis, and requirement of these structures to flatness is very high, so sacrifice layer is flat
The whole key factor with being also uniformly influence detector performance.
Sacrifice layer is used as using polyimides.The preparation method of the sacrifice layer is to drop in polyimide solution on wafer,
Spin coating covers metallic reflector.This method is due to using spin coating means, it is necessary to which experience goes to control the rotating speed of spin coating instrument to control
Made membrane spin coating thickness, this method is difficult to the thickness of accurate control film；System is needed when making Terahertz micro-metering bolometer
Make the bigger sacrifice layer of thickness, and be difficult to make thick film using the method for spin coating, so as to be difficult to reach Terahertz microbolometer heat
Count the high optical resonator of the comparison needed；In addition, this method can cause a large amount of losses of spin-on material, and easily cause
The pollution of equipment.
After polyimides spin coating, thin film sacrificial layer can be formed.The centrifugal force of different radii position is not on spin coating disk
With the thickness of film can be caused gradually thinning from disc centre to edge, so as to cause the out-of-flatness of sacrifice layer.And the later stage permitted
Alternative is all based on what sacrifice layer was operated, follow-up structure out-of-flatness is so may result in, so as to influence microbolometer
The susceptibility of heat meter, adds noise；The uniformity of figure lithographic feature size can be influenceed simultaneously, causes device performance not good.
, it is necessary to which using Ions Bombardment, due to can not accurately control its release time, release time is long during sacrifice layer release
Other structures can be caused to damage, release time is too short to cause sacrifice layer release incomplete.
Number of patent application discloses the method that MEMS is made using amorphous carbon for 201380071919.3 patent, deposits
In following defect：(1) the deposited metal film on the sacrifice layer after graphical is used when making and being electrically connected metal, sunk
Long-pending metallic film may be deposited on the electrode less than bottom, cause to be electrically connected failure；(2) not to post-depositional metal electricity
Pole is passivated protection, metal electrode oxidation is easily caused, so as to cause its being electrically connected property poor；(3) although being made using amorphous carbon
For sacrifice layer, but do not carry out planarization process to it after deposition of sacrificial layer, but Direct precipitation metal, although so may be used
To increase the adhesiveness of metal, but it is not smooth enough to obtain body structure surface, during to subsequent deposition or the more Rotating fields of photoetching,
The flatness of deposition film and the degree of accuracy of photoetching can be influenceed.
The content of the invention
The present invention for above-mentioned the deficiencies in the prior art there is provided being electrically connected property of one kind is good, and structure flatness
High uses the method that amorphous carbon makes micro-metering bolometer micro-bridge structure as sacrifice layer.
The technical scheme that the present invention solves above-mentioned technical problem is as follows：One kind uses amorphous carbon as sacrifice layer and makes micrometering
The method of bolometer micro-bridge structure, comprises the following steps：
Step 1. makes metallic reflector, the μ of film thickness 0.05~0.40 on comprising the wafer that reading circuit is substrate
M, the metallic reflector after processing, graphical treatment is patterned to metallic reflector includes several metal derbies, and
Metallic reflector after graphical treatment deposits one layer of dielectric, and the dielectric is silicon nitride film or silica
Film；
Step 2. prepares sacrifice layer on the insulating medium layer, and the sacrifice layer is amorphous carbon film, utilizes physics gas
Mutually deposition or chemical vapor deposition realize the preparation of amorphous carbon film, and the film thickness of preparation is 0.5~500 μm, and to sacrificial
Domestic animal layer, which is patterned on processing, the sacrifice layer of graphical treatment, forms anchor point hole, then, utilizes CMP process
(CMP) planarization process is carried out to amorphous carbon sacrificial layer surface；
On the sacrifice layer of step 3. after planarization supporting layer, the branch are prepared using plasma reinforced chemical vapour deposition
Support layer is low stress nitride silicon thin film；
Step 4. utilizes photoetching and etching, the supporting layer and insulating medium layer in the anchor point bottom hole portion is etched away, under exposing
The metal derby in face, forms through hole；
Step 5. utilizes tungsten plug technique deposited metal tungsten in the anchor point hole and through hole, and formation is electrically connected, and utilizes
CMP process is planarized the tungsten surface of out-of-flatness, it is maintained at same level with sacrifice layer
On；
Step 6. prepares metal electrode layer and heat-sensitive layer：Method one, metal is prepared in supporting layer using physical vapour deposition (PVD)
Electrode layer, and processing is patterned to metal electrode layer；Then, the depositing electrode protection on the metal electrode layer after graphical
Layer, and be patterned processing to electrode protecting layer, graphically after electrode protecting layer on form contact hole, the contact hole
Metal electrode layer after terminating at graphically；Then, using the method for ion beam depositing or physical vapour deposition (PVD) after graphical
Electrode protecting layer on deposit heat-sensitive layer, and processing is patterned to heat-sensitive layer；Method two, first uses ion on supporting layer
The method growth heat-sensitive layer of beam deposition physical vapour deposition (PVD), and processing is patterned to it, recycle physical vapour deposition (PVD)
Method prepares electrode protecting layer on heat-sensitive layer, and is patterned processing to the electrode protecting layer, it is graphical after electrode
Contact hole is formed on protective layer, the contact hole terminates at the heat-sensitive layer；Then, made on the electrode protecting layer after graphical
Standby metal electrode layer, and processing is patterned to it；
Step 7. thermosensitive film layer or metal electricity after graphical using the method for plasma enhanced chemical vapor deposition
Passivation layer is prepared on the layer of pole, the passivation layer is low stress nitride silicon thin film, and processing is patterned to it；
The release of step 8. sacrifice layer, the patterned device of completion passivation layer be put into plasma ashing apparatus or wait from
In daughter etching device, using oxygen plasma ashing or plasma etching, amorphous carbon sacrifice layer is removed, is formed finally
Micro-bridge structure.
Further, 0.02~0.30 μm of the thickness of the dielectric film.
Further, the supporting layer thickness is 0.10~0.30 μm.
Further, the passivation layer thickness is
Further, the electrode protecting layer is silicon nitride film.
Further, the heat-sensitive layer is vanadium oxide film.
The beneficial effects of the invention are as follows：(1) amorphous carbon film is used as sacrifice layer, and amorphous carbon film is a kind of with non-
The hydrogen-containing carbon film of crystalline state and micro- crystalline structure, it has high rigidity, resists wear-resisting, optical clarity, low-friction coefficient and chemistry lazy
Property etc. the excellent properties amorphous carbon-film of class dimantine not only preparation temperature is low, it might even be possible to prepare, relaxed to lining in room temperature
The requirement at bottom, and the preparation cost of amorphous carbon-film is low, equipment is simple, is readily available the film of larger area；(2) in through hole and anchor
Depressed place plug process deposited metal depressed place is utilized in spot hole, being electrically connected property is more preferable；(3) it is and then right using chemically mechanical polishing (CMP)
Support layer surface after amorphous carbon film and deposits tungsten carries out planarization process, improves the flatness of structure, not only subtracts and reduce
Technology difficulty, reduces influence of the surface topography to lithographic feature size, improves the uniformity of device, also bigger to make
Array and smaller pixel provide basis；(4) release of sacrifice layer is using the side such as oxygen plasma ashing or plasma etching
Method is realized, sacrifice layer can be not only removed completely, carbon dioxide can also be only generated, not resulted in environment and other products
With the pollution of equipment
Brief description of the drawings
Fig. 1 is metallic reflector of the present invention formation schematic diagram；
Fig. 2 is sacrifice layer of the present invention and supporting layer formation schematic diagram；
Fig. 3 is through hole of the present invention formation schematic diagram；
Fig. 4 is that metal depressed place of the present invention is electrically connected to form schematic diagram；
Fig. 5 is metal electrode layer pattern of the present invention formation schematic diagram；
Fig. 6 is contact hole of the present invention formation schematic diagram；
Fig. 7 is heat-sensitive layer of the present invention formation schematic diagram；
Fig. 8 is micro-bridge structure schematic diagram of the present invention；
In the accompanying drawings, the list of designations represented by each label is as follows：1st, the substrate with reading circuit, 2, metallic reflection
Layer, 2-1, metal derby, 3, insulating medium layer, 4, sacrifice layer, 5, supporting layer, 6, anchor point hole, 7, through hole, 8, metal depressed place, 9, metal
Electrode layer, 10, contact hole, 11, electrode protecting layer, 12, heat-sensitive layer, 13, passivation layer.
Embodiment
The principle and feature of the present invention are described below in conjunction with accompanying drawing, the given examples are served only to explain the present invention, and
It is non-to be used to limit the scope of the present invention.
Embodiment 1
A kind of method for using amorphous carbon to make micro-metering bolometer micro-bridge structure as sacrifice layer, it is characterised in that bag
Include following steps：
Step 1. is being making metallic reflector 2, film thickness 0.05~0.40 on the wafer of substrate 1 comprising reading circuit
μm, the metallic reflector after processing, graphical treatment is patterned to metallic reflector 2 includes several metal derbies 2-
1, and the deposition insulating medium layer 3 of metallic reflector 2 after graphical treatment, the insulating medium layer 3 is silicon nitride film
Or silicon oxide film, 0.02~0.30 μm of the thickness of the insulating medium layer 3, as shown in Figure 1.
Step 2. prepares sacrifice layer 4 on the insulating medium layer 3, and the sacrifice layer 4 is amorphous carbon film, utilizes physics
Vapour deposition or chemical vapor deposition realize the preparation of amorphous carbon film, and the amorphous carbon film thickness of preparation is 0.5~500 μ
M, and formation anchor point hole 6 on processing, the sacrifice layer 4 of graphical treatment is patterned to sacrifice layer 4, then, utilize chemical machine
Tool glossing (CMP) is planarized to the surface of amorphous carbon sacrifice layer 4, as shown in Figure 2.
Supporting layer 5 is prepared using plasma reinforced chemical vapour deposition on the sacrifice layer 4 of step 3. after planarization, it is described
Supporting layer 5 is low stress nitride silicon thin film, and the thickness of supporting layer 5 is 0.10~0.30 μm, as shown in Figure 2.
Step 4. utilizes photoetching and etching, etches away the supporting layer 5 and insulating medium layer 3 of the bottom of anchor point hole 6, exposes
Following metal derby 2-1, forms through hole 7, as shown in Figure 3.
Step 5. utilizes tungsten plug technique deposited metal tungsten 8 in the anchor point hole 6 and through hole 7, and formation is electrically connected, profit
The tungsten surface of out-of-flatness is planarized with CMP process, it is maintained at same level with sacrifice layer 4
On face, as shown in Figure 4.
Step 6. prepares metal electrode layer 2 and heat-sensitive layer 12：In supporting layer 5 metal electrode is prepared using physical vapour deposition (PVD)
Layer 9, and processing is patterned to metal electrode layer 9；Then, the depositing electrode protection on the metal electrode layer 9 after graphical
Layer 11, and formation contact hole 10, institute on the electrode protecting layer after processing, graphical treatment are patterned to electrode protecting layer 11
The metal electrode layer 9 after contact hole 10 is terminated at graphically is stated, the electrode protecting layer 11 is silicon nitride film；Then, use
The method of ion beam depositing or physical vapour deposition (PVD) deposits heat-sensitive layer 12 on the electrode protecting layer after graphical, and to heat-sensitive layer
12 are patterned processing, and the heat-sensitive layer 12 is vanadium oxide film, as shown in Figures 5 to 7.
Using the method for plasma enhanced chemical vapor deposition, the heat-sensitive layer 12 after graphical prepares passivation layer to step 7.
13, the passivation layer 13 is low stress nitride silicon thin film, and the thickness of passivation layer 13 isAs shown in Figure 7.
The release of step 8. sacrifice layer, the patterned device of completion passivation layer be put into plasma ashing apparatus or wait from
In daughter etching device, using oxygen plasma ashing or plasma etching, amorphous carbon sacrifice layer is removed, is formed finally
Micro-bridge structure, as shown in Figure 8.
Embodiment 2
From implementing unlike 1 in step 6, to prepare metal electrode layer and heat-sensitive layer uses method two：First in supporting layer 5
The method growth heat-sensitive layer 12 of upper use ion beam depositing physical vapour deposition (PVD), and processing is patterned to it, recycle thing
The method of physical vapor deposition prepares electrode protecting layer 11 on heat-sensitive layer 12, and is patterned place to the electrode protecting layer 11
Reason, it is graphical after electrode protecting layer 11 on form contact hole 10, the contact hole 10 terminates at the heat-sensitive layer 12；So in figure
Metal electrode layer 9 is prepared on electrode protecting layer 11 after shape, and processing (being not drawn into figure) is patterned to it；
The foregoing is only presently preferred embodiments of the present invention, be not intended to limit the invention, it is all the present invention spirit and
Within principle, any modification, equivalent substitution and improvements made etc. should be included in the scope of the protection.
Claims (6)
1. a kind of method for using amorphous carbon to make micro-metering bolometer micro-bridge structure as sacrifice layer, it is characterised in that including
Following steps：
Step 1. makes metallic reflector on comprising the wafer that reading circuit is substrate, and 0.05~0.40 μm of film thickness is right
The metallic reflector that metallic reflector is patterned after processing, graphical treatment includes several metal derbies, and in figure
Metallic reflector deposition insulating medium layer after change processing, the insulating medium layer is that silicon nitride film or silica are thin
Film；
Step 2. prepares sacrifice layer on the insulating medium layer, and the sacrifice layer is amorphous carbon film, heavy using physical vapor
Product or chemical vapor deposition realize the preparation of amorphous carbon film, and the film thickness of preparation is 0.5~500 μm, and to sacrifice layer
It is patterned on processing, the sacrifice layer of graphical treatment and forms anchor point hole, then, utilizes CMP process (CMP)
Amorphous carbon sacrificial layer surface is planarized；
On the sacrifice layer of step 3. after planarization supporting layer, the supporting layer are prepared using plasma reinforced chemical vapour deposition
For low stress nitride silicon thin film；
Step 4. utilizes photoetching and etching, etches away the supporting layer and insulating medium layer in the anchor point bottom hole portion, exposes following
Metal derby, forms through hole；
Step 5. utilizes tungsten plug technique deposited metal tungsten in the anchor point hole and through hole, and formation is electrically connected, and utilizes chemistry
Mechanical polishing process is planarized the tungsten surface of out-of-flatness, it is maintained at the same horizontal plane with sacrifice layer；
Step 6. prepares metal electrode layer and heat-sensitive layer：Method one, metal electrode is prepared in supporting layer using physical vapour deposition (PVD)
Layer, and processing is patterned to metal electrode layer；Then, the depositing electrode protective layer on the metal electrode layer after graphical,
And be patterned processing to electrode protecting layer, it is graphical after electrode protecting layer on form contact hole, the contact hole is terminated
Metal electrode layer after graphical；Then, the electricity using the method for ion beam depositing or physical vapour deposition (PVD) after graphical
Heat-sensitive layer is deposited on the protective layer of pole, and processing is patterned to heat-sensitive layer；Method two, it is first heavy using ion beam on supporting layer
The method growth heat-sensitive layer of product physical vapour deposition (PVD), and processing, the method for recycling physical vapour deposition (PVD) are patterned to it
Electrode protecting layer is prepared on heat-sensitive layer, and processing is patterned to the electrode protecting layer, it is graphical after electrode protection
Contact hole is formed on layer, the contact hole terminates at the heat-sensitive layer；Then gold is prepared on the electrode protecting layer after graphical
Belong to electrode layer, and processing is patterned to it；
Step 7. is made using the method for plasma enhanced chemical vapor deposition on graphical rear heat-sensitive layer or metal electrode layer
Standby passivation layer, the passivation layer is low stress nitride silicon thin film, and processing is patterned to it；
The patterned device of completion passivation layer, is put into plasma ashing apparatus or plasma by the release of step 8. sacrifice layer
In etching device, using oxygen plasma ashing or plasma etching, amorphous carbon sacrifice layer is removed, final microbridge is formed
Structure.
2. a kind of side for using amorphous carbon to make micro-metering bolometer micro-bridge structure as sacrifice layer according to claim 1
Method, it is characterised in that 0.02~0.30 μm of the thickness of the insulating medium layer.
3. a kind of side for using amorphous carbon to make micro-metering bolometer micro-bridge structure as sacrifice layer according to claim 1
Method, it is characterised in that the supporting layer thickness is 0.10~0.30 μm.
4. a kind of side for using amorphous carbon to make micro-metering bolometer micro-bridge structure as sacrifice layer according to claim 1
Method, it is characterised in that the passivation layer thickness is
5. a kind of side for using amorphous carbon to make micro-metering bolometer micro-bridge structure as sacrifice layer according to claim 1
Method, it is characterised in that the electrode protecting layer is silicon nitride film.
6. a kind of side for using amorphous carbon to make micro-metering bolometer micro-bridge structure as sacrifice layer according to claim 1
Method, it is characterised in that the heat-sensitive layer is vanadium oxide film.
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