CN106847950B - Ion implanting prepares infrared detector of Titanium oxide electrode and preparation method thereof - Google Patents
Ion implanting prepares infrared detector of Titanium oxide electrode and preparation method thereof Download PDFInfo
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- CN106847950B CN106847950B CN201710252825.6A CN201710252825A CN106847950B CN 106847950 B CN106847950 B CN 106847950B CN 201710252825 A CN201710252825 A CN 201710252825A CN 106847950 B CN106847950 B CN 106847950B
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- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 title claims abstract description 65
- OGIDPMRJRNCKJF-UHFFFAOYSA-N titanium oxide Inorganic materials [Ti]=O OGIDPMRJRNCKJF-UHFFFAOYSA-N 0.000 title claims abstract description 65
- 150000002500 ions Chemical class 0.000 title claims abstract description 38
- 238000002360 preparation method Methods 0.000 title claims abstract description 12
- 239000010410 layer Substances 0.000 claims abstract description 110
- 239000010408 film Substances 0.000 claims abstract description 78
- 229910052751 metal Inorganic materials 0.000 claims abstract description 43
- 239000002184 metal Substances 0.000 claims abstract description 43
- 239000010409 thin film Substances 0.000 claims abstract description 42
- 239000011241 protective layer Substances 0.000 claims abstract description 35
- 239000004065 semiconductor Substances 0.000 claims abstract description 32
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 claims abstract description 23
- 239000010936 titanium Substances 0.000 claims abstract description 23
- 229910052719 titanium Inorganic materials 0.000 claims abstract description 23
- 239000004020 conductor Substances 0.000 claims abstract description 22
- TUDPMSCYVZIWFW-UHFFFAOYSA-N [Ti].[In] Chemical compound [Ti].[In] TUDPMSCYVZIWFW-UHFFFAOYSA-N 0.000 claims abstract description 21
- 238000000034 method Methods 0.000 claims abstract description 18
- 229920002120 photoresistant polymer Polymers 0.000 claims abstract description 17
- 238000000151 deposition Methods 0.000 claims abstract description 13
- NJPPVKZQTLUDBO-UHFFFAOYSA-N novaluron Chemical compound C1=C(Cl)C(OC(F)(F)C(OC(F)(F)F)F)=CC=C1NC(=O)NC(=O)C1=C(F)C=CC=C1F NJPPVKZQTLUDBO-UHFFFAOYSA-N 0.000 claims description 17
- 238000005530 etching Methods 0.000 claims description 13
- 238000012545 processing Methods 0.000 claims description 12
- 230000008021 deposition Effects 0.000 claims description 9
- 238000001259 photo etching Methods 0.000 claims description 9
- 229910052581 Si3N4 Inorganic materials 0.000 claims description 7
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical group N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims description 7
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 claims description 6
- -1 Nitrogen ion Chemical class 0.000 claims description 5
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims description 4
- 239000004411 aluminium Substances 0.000 claims description 4
- 229910052782 aluminium Inorganic materials 0.000 claims description 4
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 4
- 229910052802 copper Inorganic materials 0.000 claims description 4
- 239000010949 copper Substances 0.000 claims description 4
- 230000005611 electricity Effects 0.000 claims description 4
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical group [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 claims description 4
- 229910052721 tungsten Inorganic materials 0.000 claims description 4
- 239000010937 tungsten Substances 0.000 claims description 4
- 239000004642 Polyimide Substances 0.000 claims description 3
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 3
- 229910052786 argon Inorganic materials 0.000 claims description 3
- 238000002513 implantation Methods 0.000 claims description 3
- 229910052743 krypton Inorganic materials 0.000 claims description 3
- DNNSSWSSYDEUBZ-UHFFFAOYSA-N krypton atom Chemical compound [Kr] DNNSSWSSYDEUBZ-UHFFFAOYSA-N 0.000 claims description 3
- IJGRMHOSHXDMSA-UHFFFAOYSA-N nitrogen Substances N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims description 3
- 229910052757 nitrogen Inorganic materials 0.000 claims description 3
- 229920001721 polyimide Polymers 0.000 claims description 3
- 238000002310 reflectometry Methods 0.000 claims description 3
- 229910052814 silicon oxide Inorganic materials 0.000 claims description 3
- 229910004205 SiNX Inorganic materials 0.000 claims description 2
- 229910003481 amorphous carbon Inorganic materials 0.000 claims description 2
- 238000005229 chemical vapour deposition Methods 0.000 claims description 2
- 238000001312 dry etching Methods 0.000 claims 1
- 238000009413 insulation Methods 0.000 claims 1
- 230000000149 penetrating effect Effects 0.000 claims 1
- 238000001039 wet etching Methods 0.000 claims 1
- 238000004519 manufacturing process Methods 0.000 abstract description 13
- 230000003647 oxidation Effects 0.000 abstract description 4
- 238000007254 oxidation reaction Methods 0.000 abstract description 4
- LCKIEQZJEYYRIY-UHFFFAOYSA-N Titanium ion Chemical compound [Ti+4] LCKIEQZJEYYRIY-UHFFFAOYSA-N 0.000 abstract 1
- 238000010586 diagram Methods 0.000 description 11
- 230000008859 change Effects 0.000 description 10
- 238000005516 engineering process Methods 0.000 description 5
- XHCLAFWTIXFWPH-UHFFFAOYSA-N [O-2].[O-2].[O-2].[O-2].[O-2].[V+5].[V+5] Chemical compound [O-2].[O-2].[O-2].[O-2].[O-2].[V+5].[V+5] XHCLAFWTIXFWPH-UHFFFAOYSA-N 0.000 description 4
- 239000000463 material Substances 0.000 description 4
- 229910001935 vanadium oxide Inorganic materials 0.000 description 4
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 2
- 230000009286 beneficial effect Effects 0.000 description 2
- 230000003446 memory effect Effects 0.000 description 2
- 239000001301 oxygen Substances 0.000 description 2
- 229910052760 oxygen Inorganic materials 0.000 description 2
- 230000008569 process Effects 0.000 description 2
- 230000005855 radiation Effects 0.000 description 2
- 239000000523 sample Substances 0.000 description 2
- 244000309464 bull Species 0.000 description 1
- 238000010276 construction Methods 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 230000007812 deficiency Effects 0.000 description 1
- 238000001514 detection method Methods 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 239000003814 drug Substances 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 239000010931 gold Substances 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- 238000002347 injection Methods 0.000 description 1
- 239000007924 injection Substances 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 238000012544 monitoring process Methods 0.000 description 1
- 230000005616 pyroelectricity Effects 0.000 description 1
- 238000005057 refrigeration Methods 0.000 description 1
- 230000004044 response Effects 0.000 description 1
- 239000000243 solution Substances 0.000 description 1
- 238000010186 staining Methods 0.000 description 1
- 229910052720 vanadium Inorganic materials 0.000 description 1
- LEONUFNNVUYDNQ-UHFFFAOYSA-N vanadium atom Chemical compound [V] LEONUFNNVUYDNQ-UHFFFAOYSA-N 0.000 description 1
- 239000002699 waste material Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
- H01L31/10—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors characterised by potential barriers, e.g. phototransistors
- H01L31/101—Devices sensitive to infrared, visible or ultraviolet radiation
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
- G01J5/00—Radiation pyrometry, e.g. infrared or optical thermometry
- G01J5/10—Radiation pyrometry, e.g. infrared or optical thermometry using electric radiation detectors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0224—Electrodes
- H01L31/022408—Electrodes for devices characterised by at least one potential jump barrier or surface barrier
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
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- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Electromagnetism (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Spectroscopy & Molecular Physics (AREA)
- Photometry And Measurement Of Optical Pulse Characteristics (AREA)
Abstract
The present invention relates to the infrared detector that a kind of ion implanting prepares Titanium oxide electrode, thin film of titanium oxide is equipped with supporting layer and connection metal, thin film of titanium oxide is included in the semiconductor oxide titanium film positioned at middle part and the conductor indium titanium film positioned at the semiconductor oxide titanium film both sides, temperature-sensitive layer film is used as using titanium oxide, and ion implanting is carried out to partial oxidation titanium film, the partial oxidation titanium film is set to become conductor indium titanium film, instead of metal electrode of the prior art, technique is simple, and production capacity is higher.Further relate to the preparation method of above-mentioned detector; it is included in the step of thin film of titanium oxide, the first protective layer and photoresist are sequentially prepared on supporting layer and removes above thin film of titanium oxide not by the first protection layer film of photoresist covering; and the thin film of titanium oxide to exposing carries out ion implanting; the step of thin film of titanium oxide after ion implanting is conductor indium titanium film; further include removal photoresist; the step of depositing the second protective layer, carrying out structure release.
Description
Technical field
The invention belongs to the MEMS technique manufacturing field in semiconductor technology, and in particular to a kind of ion implanting system
Infrared detector of standby Titanium oxide electrode and preparation method thereof.
Background technology
Uncooled infrared detection technology is that the infra-red radiation (IR) of external object is perceived and turned without refrigeration system
Electric signal is melted into after processing in the technology of display terminal output, can be widely applied to national defence, space flight, medicine, production monitoring etc.
Various fields.Non-refrigerated infrared focal plane probe has light weight, volume since it can work under room temperature state
The advantages that small, long lifespan, cost are low, power is small, startup is fast and stability is good, meets civilian infrared system and part is military red
There is an urgent need to development was swift and violent in recent years to Long Wave Infrared Probe for external system.Non-refrigerated infrared detector mainly includes surveying
Bolometer, pyroelectricity and thermopile detector etc., wherein the heat of the microbolometer based on MEMS (MEMS) manufacturing process
(Micro-bolometer) infrared detector is counted since its speed of response is high, manufacture craft it is simple and with IC manufacturing work
Skill is compatible, has relatively low cross-talk and relatively low 1/f noise, higher frame speed, works without chopper, easy to mass produce
The advantages that, it is one of mainstream technology of non-refrigerated infrared detector.
Micro-metering bolometer (Micro-bolometer) be based on the material with sensitive characteristic when temperature changes
A kind of non-refrigerated infrared detector that resistance value occurs corresponding change and manufactures.Heat during work to being supported on heat insulating construction
Quick resistance both ends apply fixed bias voltage or current source, and temperature change caused by incident IR radiation causes thermistor to hinder
Value reduces, so that electric current, voltage change, and the change of electric signal is read by reading circuit (ROIC).As temperature-sensitive electricity
The material of resistance must have higher temperature-coefficient of electrical resistance (TCR), relatively low 1/f noise, appropriate resistance value and the electricity stablized
Performance, and the requirement such as easily prepared.
Vanadium oxide is typically now used as thermosensitive film, but vanadium oxide thermosensitive film and integrated circuit fabrication process
Compatibility is bad, and factory worries that vanadium oxide material and vanadium material stain equipment, it is necessary to the equipment after vanadium oxide technique, carries out single
Solely configure and isolated, prevent from staining other products and process equipment.
In addition, being generally electrically connected in the prior art by deposit metal electrodes with heat-sensitive layer film, heat-sensitive layer is experienced
Temperature change be delivered on the reading circuit of pedestal, it is also necessary to metal electrode layer is handled by photoetching or etching portions of patterned,
Technique is cumbersome, and production capacity is relatively low, and waste of resource, and either first deposits thermosensitive film, redeposited electrode, and still first deposition is electric
Pole, deposits thermosensitive film afterwards, neither in one plane, as soon as more planes, influence flatness bull point, technique step
It is rapid more, it is possible to bring the defects of more, influence yield.
The content of the invention
The present invention is directed to the deficiencies in the prior art, there is provided a kind of ion implanting prepares the infrared spy of Titanium oxide electrode
Device is surveyed, using titanium oxide as temperature-sensitive layer film, and ion implanting is carried out to partial oxidation titanium film, makes the partial oxidation titanium thin
Film becomes conductor indium titanium film, and instead of metal electrode of the prior art, technique is simple, and production capacity is higher.
The technical solution that above-mentioned technical problem is solved in the present invention is as follows：Ion implanting prepares the infrared spy of Titanium oxide electrode
Device, including a detector body for carrying the semiconductor pedestal of reading circuit and being electrically connected with the semiconductor pedestal are surveyed, it is special
Sign is that the detector body includes metallic reflector, insulating medium layer, supporting layer and thin film of titanium oxide, the semiconductor
Pedestal is equipped with metallic reflector and insulating medium layer, and the metallic reflector includes several metal derbies；
The insulating medium layer is equipped with supporting layer, and the supporting layer is equipped with anchor point hole and through hole, and the through hole terminates
It is filled with the metal derby, in the anchor point hole and the through hole and connects metal, on the supporting layer and the connection metal
Equipped with thin film of titanium oxide, the thin film of titanium oxide is included in positioned at the semiconductor oxide titanium film at middle part and positioned at the semiconductor
The conductor indium titanium film of thin film of titanium oxide both sides, the semiconductor oxide titanium film are equipped with the first protective layer, the conductor
Thin film of titanium oxide and first protective layer are equipped with the second protective layer.
Further, the connection metal is tungsten, aluminium or copper.
Further, the supporting layer is silicon nitride film, and thickness is
Intermediate ion injection of the present invention prepares the beneficial effect of the infrared detector of Titanium oxide electrode：(1) it is thin using titanium oxide
Film has preferable stability, resistance reply speed is fast, and resistance memory effect is few as temperature-sensitive layer film；
(2) area of thermosensitive film is increased, so that filling rate is increased, and after the thin film of titanium oxide ion implanting of both sides
Become conductor indium titanium film, electric conductivity is more preferable, and conductor indium titanium film region is equivalent to metal electrode of the prior art
Layer, the thin film of titanium oxide at middle part are not ion implanted, and equivalent to temperature-sensitive layer film of the prior art, it is independent to eliminate electrode layer
Deposition film, photoetching and etching and etc., significantly simplify processing step, save cost, improve production capacity；
The preparation method of the infrared detector of Titanium oxide electrode is prepared the invention further relates to above-mentioned ion implanting, including it is following
Step：
Step 1：Metallic reflector is made on comprising reading circuit semiconductor pedestal, and figure is carried out to metallic reflector
Change is handled, it is graphical after metallic reflector form several metal derbies；The metal derby and the reading electricity on semiconductor pedestal
Road is electrically connected；Then, insulating medium layer is deposited on patterned metal reflecting layer is completed；
Step 2：The deposition of sacrificial layer on the insulating medium layer, and processing is patterned to sacrifice layer, in figure
Anchor point hole, and the depositing support layer on the sacrifice layer after graphical treatment are formed on sacrifice layer after change processing；
Step 3：Using the method for photoetching and etching, part supporting layer is etched away, supporting layer etch-stop is in the metal
Block, forms through hole, in the through hole and anchor point inner hole deposition product connection metal；
Step 4：The deposited oxide titanium film on supporting layer, and the first protective layer is deposited on thin film of titanium oxide, then,
Photoresist is coated on the middle part of first protective layer, the photoresist overlay area is semiconductor oxide titanium film, and as detector
Temperature-sensitive layer film；
Step 5：The first protection not covered above thin film of titanium oxide by photoresist is removed with engraving method (dry or wet)
Layer film, the first etching protection layer terminate at the thin film of titanium oxide, exposed portion thin film of titanium oxide, then the oxygen to exposing again
Change titanium film and carry out ion implanting, ion is argon, krypton or Nitrogen ion, and Implantation Energy is controlled between 1Kev~100Kev, ion
Concentration is controlled 1 × 1013ions/cm2~1 × 1021ions/cm2Between, the thin film of titanium oxide after ion implanting is conductor indium
Titanium film；
Step 6：Photoresist is removed, the second protection is deposited in conductor indium titanium film and the first protective layer not being etched
Layer；
Step 7：Using the method for photoetching and etching, processing, the second etching protection layer are patterned to the second protective layer
Sacrifice layer is terminated at, then, carries out structure release, removes sacrifice layer and forms micro-bridge structure.
Beneficial effects of the present invention：
(1) thin film of titanium oxide is used to there is preferable stability, resistance reply speed is fast, resistance as temperature-sensitive layer film
Memory effect is few；
(2) manufacturing process of thin film of titanium oxide is compatible with CMOS processing procedures, without arranging special machine because of pollution problem
Platform, is substantially improved production capacity and efficiency；
(3) increase the area of thermosensitive film, so as to increase filling rate, and after the thin film of titanium oxide ion implanting of both sides into
For conductor indium titanium film, electric conductivity is more preferable, conductor indium titanium film region equivalent to metal electrode layer of the prior art,
The thin film of titanium oxide at middle part is not ion implanted, equivalent to temperature-sensitive layer film of the prior art, is eliminated electrode layer and is individually sunk
Product film, photoetching and etching and etc., significantly simplify processing step, save cost, improve production capacity；
(4) deposit metal electrodes layer is not had to, the deposition of a few plane, it becomes possible to further improve the flat of detector
Degree, effectively lifts fine ratio of product.
Further, the thickness of metallic reflector isMetallic reflector is 8~14 μm infrared to wavelength
The reflectivity of light is more than 99%.
Further, the insulating medium layer is silicon nitride film or silicon oxide film, and thickness is
Further, the sacrifice layer is polyimides or amorphous carbon, and thickness is 1.0~2.5 μm.
Further, first protective layer and the second protective layer are formed using chemical vapor deposition low stress SiNx
's.
Brief description of the drawings
Fig. 1 forms schematic diagram for metallic reflector in the present invention and insulating medium layer；
Fig. 2 forms schematic diagram for sacrifice layer in the present invention and supporting layer；
Fig. 3 forms schematic diagram for through hole in the present invention；
Fig. 4 is connection filling hole with metal schematic diagram in the present invention；
Fig. 5 forms schematic diagram for thin film of titanium oxide in the present invention；
Fig. 6 forms schematic diagram for the first protective layer in the present invention；
Fig. 7 forms schematic diagram for photoresist in the present invention；
Fig. 8 injects thin film of titanium oxide schematic diagram for intermediate ion of the present invention；
Fig. 9 forms schematic diagram for the second protective layer in the present invention；
Figure 10 is the graphical schematic diagram of the second protective layer in the present invention；
Figure 11 is panel detector structure schematic diagram in the present invention；
In the accompanying drawings, the list of designations represented by each label is as follows：1st, semiconductor pedestal, 2, metallic reflector, 2-
1st, metal derby, 3, insulating medium layer, 4, sacrifice layer, 5, supporting layer, 6, anchor point hole, 7, through hole, 8, connection metal, 9, titanium oxide it is thin
Film, 9-1, semiconductor oxide titanium film, 9-2, conductor indium titanium film, the 10, first protective layer, the 11, photoresist, 12, second protection
Layer.
Embodiment
The principle and features of the present invention will be described below with reference to the accompanying drawings, and the given examples are served only to explain the present invention, and
It is non-to be used to limit the scope of the present invention.
The present invention relates to the infrared detector that ion implanting prepares Titanium oxide electrode, and as shown in figure 11, prepared by ion implanting
The infrared detector of Titanium oxide electrode, including one with reading circuit semiconductor pedestal 1 and be electrically connected with the semiconductor pedestal 1
The detector body connect, the detector body include metallic reflector 2, insulating medium layer 3, supporting layer 5 and thin film of titanium oxide
9, the semiconductor pedestal 1 is equipped with metallic reflector 2 and insulating medium layer 3, and the metallic reflector 2 includes several metals
Block 2-1；
The insulating medium layer 3 is equipped with supporting layer 5, and the supporting layer 5 is equipped with anchor point hole and through hole, and the through hole is whole
The metal derby 2-1 is terminated in, connection metal 8, the supporting layer 5 and the connection are filled with the anchor point hole and the through hole
Metal 8 is equipped with thin film of titanium oxide 9, and the thin film of titanium oxide 9 includes being located at the semiconductor oxide titanium film 9-1 at middle part and is arranged on
The conductor indium titanium film 9-2 of the semiconductor oxide titanium film 9-1 both sides, the semiconductor oxide titanium film 9-1 are equipped with
First protective layer 10, the conductor indium titanium film 9-2 and first protective layer 10 are equipped with the second protective layer 12.The company
It is tungsten, aluminium or copper to connect metal 8, and the supporting layer 5 is silicon nitride film, and thickness is
Preparation method such as Fig. 1-figure of the infrared detector of Titanium oxide electrode is prepared the invention further relates to above-mentioned ion implanting
Shown in 11, ion implanting prepares the preparation method of the infrared detector of Titanium oxide electrode, comprises the following steps：
Step 1：Comprising metallic reflector 2 is made on reading circuit semiconductor pedestal 1, and metallic reflector 2 is carried out
Graphical treatment, it is graphical after metallic reflector 2 form several metal derbies 2-1；The metal derby 2-1 and semiconductor pedestal
Reading circuit on 1 is electrically connected；Then, insulating medium layer 3 is deposited on patterned metal reflecting layer 2 is completed, as shown in Figure 1；
The thickness of metallic reflector 2 is Metallic reflector 2 exists the reflectivity for the infrared light that wavelength is 8~14 μm
More than 99%, the insulating medium layer 3 is silicon nitride film or silicon oxide film, and thickness is
Step 2：The deposition of sacrificial layer 4 on the insulating medium layer 3, and processing is patterned to sacrifice layer 4, scheming
Form anchor point hole 6 on sacrifice layer 4 after shapeization processing, depositing support layer 5 on the sacrifice layer 4 after graphical treatment, such as Fig. 2 institutes
Show；The supporting layer 5 is silicon nitride film, and the sacrifice layer 4 is polyimides, and the thickness of the sacrifice layer 4 is 1.0~2.5 μ
M, the thickness of the supporting layer 5 are
Step 3：Using the method for photoetching and etching, part supporting layer 5 is etched away, 5 etch-stop of supporting layer is in the gold
Belong to block 2-1, form through hole 7, as shown in Figure 3；The deposition connection metal 8 in the through hole 7 and anchor point hole 6, as shown in Figure 4；Institute
It is aluminium, tungsten or copper to state connection metal 8.
Step 4：The deposited oxide titanium film 9 on supporting layer 5, as shown in Figure 5；And deposit first on thin film of titanium oxide 9
Protective layer 10, as shown in Figure 6；Then, photoresist 11 is coated on the first protective layer 10, as shown in Figure 7；The photoresist overlay area
For semiconductor oxide titanium film 9-1, and as the temperature-sensitive layer film of detector.
Step 5：Thin film of titanium oxide 9 is removed above not by the first protection of photoresist covering with engraving method (dry or wet)
Layer film 10,10 etch-stop of the first protective layer is in the thin film of titanium oxide 9, exposed portion thin film of titanium oxide 9, then again to dew
The thin film of titanium oxide 9 gone out carries out ion implanting, as shown in Figure 8；Ion is argon, krypton or Nitrogen ion, and Implantation Energy is controlled in 1Kev
Between~100Kev, ion concentration is controlled 1 × 1013ions/cm2~1 × 1021ions/cm2Between, the oxygen after ion implanting
It is conductor indium titanium film 9-2, the conductor indium titanium film 9-2 equivalent to metal electrode layer in the prior art to change titanium film,
Possess good electric conductivity, the temperature change that the temperature-sensitive layer film is experienced is delivered to reading circuit in time.
Step 6：Photoresist 11 is removed, is deposited on conductor indium titanium film 9-2 and the first protective layer 10 not being etched
Second protective layer 12, as shown in Figure 9.
Step 7：Using the method for photoetching and etching, processing, the second protective layer 12 are patterned to the second protective layer 12
Etch-stop is in sacrifice layer 4, as shown in Figure 10；Then, structure release is carried out, removes sacrifice layer 4 and forms micro-bridge structure, such as Figure 11
It is shown.
The foregoing is merely presently preferred embodiments of the present invention, is not intended to limit the invention, it is all the present invention spirit and
Within principle, any modification, equivalent replacement, improvement and so on, should all be included in the protection scope of the present invention.
Claims (8)
1. ion implanting prepares the infrared detector of Titanium oxide electrode, including a semiconductor pedestal with reading circuit and with institute
State the detector body of semiconductor pedestal electrical connection, it is characterised in that the detector body includes metallic reflector, insulation is situated between
Matter layer, supporting layer and thin film of titanium oxide, the semiconductor pedestal are equipped with metallic reflector and insulating medium layer, and the metal is anti-
Penetrating layer includes several metal derbies；
The insulating medium layer is equipped with supporting layer, and the supporting layer is equipped with anchor point hole and through hole, and the through hole terminates at institute
Metal derby is stated, is equipped with the anchor point hole and the through hole filled with connection metal, the supporting layer and the connection metal
Thin film of titanium oxide, the thin film of titanium oxide are included positioned at the semiconductor oxide titanium film at middle part and positioned at the semiconductor oxide titanium
The conductor indium titanium film of film both sides, the semiconductor oxide titanium film are equipped with the first protective layer, the conductor indium titanium
Film and first protective layer are equipped with the second protective layer.
2. ion implanting according to claim 1 prepares the infrared detector of Titanium oxide electrode, it is characterised in that the company
It is tungsten, aluminium or copper to connect metal.
3. ion implanting according to claim 1 prepares the infrared detector of Titanium oxide electrode, it is characterised in that its feature
It is, the supporting layer is silicon nitride film, and thickness is
4. claim 1-3 any one of them ion implantings prepare the preparation method of the infrared detector of Titanium oxide electrode, its
It is characterized in that, comprises the following steps：
Step 1：Metallic reflector is made on comprising reading circuit semiconductor pedestal, and place is patterned to metallic reflector
Reason, it is graphical after metallic reflector form several metal derbies；The metal derby and the reading circuit electricity on semiconductor pedestal
Connection；Then, insulating medium layer is deposited on patterned metal reflecting layer is completed；
Step 2：The deposition of sacrificial layer on the insulating medium layer, and processing is patterned to sacrifice layer, graphically locating
Anchor point hole, and depositing support layer on the sacrifice layer after graphical treatment are formed on sacrifice layer after reason；
Step 3：Using the method for photoetching and etching, part supporting layer is etched away, supporting layer etch-stop is in the metal derby, shape
Into through hole, in the through hole and anchor point inner hole deposition product connection metal；
Step 4：The deposited oxide titanium film on supporting layer, and the first protective layer is deposited on thin film of titanium oxide, then, first
Photoresist is coated on protective layer, the photoresist overlay area is semiconductor oxide titanium film, and thin as the heat-sensitive layer of detector
Film；
Step 5：The first protection not covered above thin film of titanium oxide by photoresist is removed with the method for dry etching or wet etching
Layer film, the first etching protection layer terminate at the thin film of titanium oxide, exposed portion thin film of titanium oxide, thin to the titanium oxide that exposes
Film carries out ion implanting, and ion is argon, krypton or Nitrogen ion, and Implantation Energy is controlled between 1Kev~100Kev, ion concentration control
System is 1 × 1013ions/cm2~1 × 1021ions/cm2Between, the thin film of titanium oxide after ion implanting is thin for conductor indium titanium
Film；
Step 6：Photoresist is removed, the second protective layer is deposited in conductor indium titanium film and the first protective layer not being etched；
Step 7：Using the method for photoetching and etching, processing is patterned to the second protective layer, the second etching protection layer terminates
In sacrifice layer, then, structure release is carried out, remove sacrifice layer and form micro-bridge structure.
5. ion implanting according to claim 4 prepares the preparation method of the infrared detector of Titanium oxide electrode, its feature
It is, the thickness of metallic reflector isReflectivity of the metallic reflector to wavelength for 8~14 μm of infrared light
More than 99%.
6. ion implanting according to claim 4 prepares the preparation method of the infrared detector of Titanium oxide electrode, its feature
It is, the insulating medium layer is silicon nitride film or silicon oxide film, and thickness is
7. ion implanting according to claim 4 prepares the preparation method of the infrared detector of Titanium oxide electrode, its feature
It is, the sacrifice layer is polyimides or amorphous carbon, and thickness is 1.0~2.5 μm.
8. ion implanting according to claim 4 prepares the preparation method of the infrared detector of Titanium oxide electrode, its feature
It is, first protective layer and the second protective layer are formed using chemical vapor deposition low stress SiNx.
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