CN103855238B - A kind of back of the body incident immersion thermosensitive film type Infrared Detectors - Google Patents
A kind of back of the body incident immersion thermosensitive film type Infrared Detectors Download PDFInfo
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- CN103855238B CN103855238B CN201410020924.8A CN201410020924A CN103855238B CN 103855238 B CN103855238 B CN 103855238B CN 201410020924 A CN201410020924 A CN 201410020924A CN 103855238 B CN103855238 B CN 103855238B
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- 238000007654 immersion Methods 0.000 title claims abstract description 12
- 239000013078 crystal Substances 0.000 claims abstract description 14
- 229910052732 germanium Inorganic materials 0.000 claims abstract description 14
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 claims abstract description 14
- 239000000758 substrate Substances 0.000 claims abstract description 14
- QLNFINLXAKOTJB-UHFFFAOYSA-N [As].[Se] Chemical compound [As].[Se] QLNFINLXAKOTJB-UHFFFAOYSA-N 0.000 claims description 6
- 230000004044 response Effects 0.000 abstract description 8
- 230000035945 sensitivity Effects 0.000 abstract description 8
- 230000004043 responsiveness Effects 0.000 abstract description 7
- 238000011161 development Methods 0.000 abstract description 4
- 238000005057 refrigeration Methods 0.000 abstract description 2
- 238000010923 batch production Methods 0.000 abstract 1
- 239000010408 film Substances 0.000 description 26
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 16
- 239000011572 manganese Substances 0.000 description 12
- 239000000463 material Substances 0.000 description 7
- 238000000034 method Methods 0.000 description 7
- 230000007704 transition Effects 0.000 description 7
- PNEYBMLMFCGWSK-UHFFFAOYSA-N Alumina Chemical compound [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 6
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 6
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 description 4
- YQOXCVSNNFQMLM-UHFFFAOYSA-N [Mn].[Ni]=O.[Co] Chemical compound [Mn].[Ni]=O.[Co] YQOXCVSNNFQMLM-UHFFFAOYSA-N 0.000 description 4
- 229910052804 chromium Inorganic materials 0.000 description 4
- 239000011651 chromium Substances 0.000 description 4
- 239000003292 glue Substances 0.000 description 4
- 239000010931 gold Substances 0.000 description 4
- 229910052737 gold Inorganic materials 0.000 description 4
- 238000000059 patterning Methods 0.000 description 4
- 238000000206 photolithography Methods 0.000 description 4
- QTBSBXVTEAMEQO-UHFFFAOYSA-N Acetic acid Chemical compound CC(O)=O QTBSBXVTEAMEQO-UHFFFAOYSA-N 0.000 description 3
- XKRFYHLGVUSROY-UHFFFAOYSA-N argon Substances [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 3
- 229910052759 nickel Inorganic materials 0.000 description 3
- 239000000126 substance Substances 0.000 description 3
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 2
- PQLVXDKIJBQVDF-UHFFFAOYSA-N acetic acid;hydrate Chemical compound O.CC(O)=O PQLVXDKIJBQVDF-UHFFFAOYSA-N 0.000 description 2
- 239000000853 adhesive Substances 0.000 description 2
- 230000001070 adhesive effect Effects 0.000 description 2
- 229910052786 argon Inorganic materials 0.000 description 2
- 238000001035 drying Methods 0.000 description 2
- 238000002386 leaching Methods 0.000 description 2
- 239000011159 matrix material Substances 0.000 description 2
- 229910052751 metal Inorganic materials 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 239000011574 phosphorus Substances 0.000 description 2
- 229910001392 phosphorus oxide Inorganic materials 0.000 description 2
- 239000002243 precursor Substances 0.000 description 2
- 238000002360 preparation method Methods 0.000 description 2
- 230000005855 radiation Effects 0.000 description 2
- 238000011160 research Methods 0.000 description 2
- 238000012360 testing method Methods 0.000 description 2
- 239000010409 thin film Substances 0.000 description 2
- 238000003466 welding Methods 0.000 description 2
- -1 argon ion Chemical class 0.000 description 1
- 150000001495 arsenic compounds Chemical class 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- ZBYYWKJVSFHYJL-UHFFFAOYSA-L cobalt(2+);diacetate;tetrahydrate Chemical compound O.O.O.O.[Co+2].CC([O-])=O.CC([O-])=O ZBYYWKJVSFHYJL-UHFFFAOYSA-L 0.000 description 1
- 239000012141 concentrate Substances 0.000 description 1
- 238000011109 contamination Methods 0.000 description 1
- 238000001816 cooling Methods 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 238000000280 densification Methods 0.000 description 1
- 238000013461 design Methods 0.000 description 1
- 238000001514 detection method Methods 0.000 description 1
- 238000003745 diagnosis Methods 0.000 description 1
- 230000005611 electricity Effects 0.000 description 1
- 238000005538 encapsulation Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 238000001914 filtration Methods 0.000 description 1
- 239000000446 fuel Substances 0.000 description 1
- 238000010884 ion-beam technique Methods 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 229910052748 manganese Inorganic materials 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 239000012528 membrane Substances 0.000 description 1
- 238000004377 microelectronic Methods 0.000 description 1
- 238000012544 monitoring process Methods 0.000 description 1
- 230000004297 night vision Effects 0.000 description 1
- 238000004806 packaging method and process Methods 0.000 description 1
- 230000010287 polarization Effects 0.000 description 1
- 239000000843 powder Substances 0.000 description 1
- 238000001556 precipitation Methods 0.000 description 1
- 238000012545 processing Methods 0.000 description 1
- 230000005616 pyroelectricity Effects 0.000 description 1
- 230000002269 spontaneous effect Effects 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 238000003860 storage Methods 0.000 description 1
- 238000001931 thermography Methods 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
- 238000001039 wet etching Methods 0.000 description 1
Classifications
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
- G01J5/00—Radiation pyrometry, e.g. infrared or optical thermometry
- G01J5/02—Constructional details
- G01J5/08—Optical arrangements
- G01J5/0878—Diffusers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0232—Optical elements or arrangements associated with the device
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0232—Optical elements or arrangements associated with the device
- H01L31/02327—Optical elements or arrangements associated with the device the optical elements being integrated or being directly associated to the device, e.g. back reflectors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
- H01L31/09—Devices sensitive to infrared, visible or ultraviolet radiation
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- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Electromagnetism (AREA)
- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Spectroscopy & Molecular Physics (AREA)
- Photometry And Measurement Of Optical Pulse Characteristics (AREA)
Abstract
The invention discloses a kind of back of the body incident immersion thermosensitive film type Infrared Detectors, the integrated one germanium single crystal packaged lens that can assemble infrared signal on described Infrared Detectors substrate back, the sensitivity unit of detector and the compensation unit of redeeming lay respectively at germainium lens optically focused gonglion position and fringe region. The advantage of this patent is: can effectively eliminate the equivalent thermal capacitance, the impact of signal cross-talk on response device rate that in temperature-sensitive device, cause because of body effect; Utilize the optically focused effect of germainium lens, the mode from film-substrate back surface incident to responsive unit realizes immersion and surveys, and has significantly improved responsiveness and the detectivity of thermosensitive film type Infrared Detectors. Disclosing of this patent, has certain directive function, and can be used for the batch production of unit immersion infrared detector for development high-performance, non-refrigeration thermosensitive film type infrared detector.
Description
Technical field
The present invention relates to Infrared Detectors, be specifically related to a kind of back of the body incident immersion thermosensitive film type infrared acquisitionDevice.
Background technology
Non-refrigeration thermosensitive type Infrared Detectors is a kind of important Infrared Detectors, compares photon type infrared acquisitionUtensil have preparation cost cheap, without low-temperature cooling system, wide-band response, broad application temperature range, deviceThe advantages such as part encapsulation is simple, have a wide range of applications in the field such as military, civilian and industrial, for example, can be used forTemperature sensor, infrared thermal imaging, fireproof alarming, non-contact temperature measuring, night vision detection, security protection detect, ringAll many-sides such as border monitoring, guided missile tracking and interception, medical diagnosis etc. Thermosensitive type Infrared Detectors be utilize redExtraradial fuel factor, surveys infra-red radiation by heat and the conversion of other physical quantitys. Thermal sensitive effectFeature is that the lattice of incident light and material interacts, and makes material temperature increase, thereby causes with temperature haveThe physics closing, chemistry or electricity parameter change, for example resistance value, spontaneous polarization strength, thermoelectricKinetic potential etc. Wherein, be most widely used with thermosensitive resistance type Infrared Detectors, it compares pyroelectricity and thermoelectricityEven two kinds of temperature-sensitive Infrared Detectors are more easily prepared, and with low cost, and performance is also more stable.
In the past, people mainly concentrate on body material the research of temperature-sensitive Infrared Detectors. Body material is because of crystal grainBetween the impact of defect such as incomplete contact and cavity, cause repeatability, the less stable of device and deviceThere is the unfavorable factors such as thermal capacitance is large, response speed is slow in part. In recent years, along with thin film technique and microelectronics processingDeveloping rapidly of technique, transfers on film-type material gradually to the research of device. Thin-film material is even because of it,Densification, prepared response device speed is fast, reliability and stability are high, reproducible. At current electronicsUnder the demand of equipment lightweight, slimming, miniaturization, the temperature-sensitive Infrared Detectors of high-performance, high stable moreMore come into one's own.
But general thermosensitive film type Infrared Detectors ubiquity sensitivity is low, time constant is large, quickBetween sense unit and compensation, there is the problems such as certain signal cross-talk, response device rate and detectivity are not high. This speciallyProfit, by the position of the responsive unit of appropriate design device, makes to be deposited on sensitivity unit's film and compensation unit point on substrateCloth is at two corner positions of substrate, reduced, by the substrate equivalent thermal capacitance causing of conducting heat, to have eliminated responsive unitAnd the impact of signal cross-talk between compensation unit, the response time of having reduced device; Meanwhile, adopted and can assembleThe germanium single crystal packaged lens of infrared signal, will based on chemical solution method (see Chinese invention patent:200610030144.7) the thermo-responsive film of manganese cobalt nickel oxygen of preparing is bonded in the optically focused center of germainium lens,Make higher responsiveness and (be greater than 103V/W), detectivity is (higher than 5 × 108cm·Hz0.5/ W) andThe unit back of the body incident immersion thermosensitive film type Infrared Detectors of less time constant (being less than 10 milliseconds).
Summary of the invention
The object of the invention is to propose a kind of back of the body incident immersion thermosensitive film type Infrared Detectors. This patentDesign has broken through the responsiveness of conventional thin membranous type device and the limit of detectivity, efficiently solves film-type deviceMiddle thermal capacitance is large, time constant is large, responsiveness and the problem such as detectivity is not high.
A kind of carry on the back incident immersion thermosensitive film type Infrared Detectors with side view top view as Fig. 1 and 2 instituteShow, it is characterized in that on the described thermo-responsive film-substrate back side integrated one can assemble the germanium list of infrared signalBrilliant packaged lens 4.
Described germanium single crystal packaged lens 4 is for refractive index n=4, resistivity are greater than 30 Ω cm, surface is coated withThe germanium hemisphere crystal that has anti-reflecting layer, is coated with and carries out bonding as dielectric layer and Infrared Detectors in its bottom surfaceSelenium arsenic compound film.
The designed panel detector structure of this patent is realized by following concrete processing step:
1) prepare thermosensitive film. Adopting chemical solution method on amorphous nickel/phosphorus/aluminium oxide substrate, to prepare thickness is 6-8Micron manganese cobalt nickel oxygen film.
2) etch mask. In manganese cobalt nickel oxygen film surface photolithography patterning, rear employing argon ion/HBr wet methodThe sensitivity unit of device and compensation unit are produced on two drift angles that the length of side is the rectangular substrate of 5 millimeters by etching technicsPosition, area is 0.01mm2-0.25mm2. Floating glue cleans.
3) be coated with chromium/gold electrode. In manganese cobalt nickel oxygen film surface photolithography patterning, rear employing ion beam sputteringThe chromium of technique deposit 50 nanometers and the gold of 200 nanometers are as electrode. Floating glue cleans.
4) scribing. Mode by mechanical scribing by detector along responsive unit two sidelines with compensation unitCut, substrate breadth length ratio is 1:1, and width is 5 millimeters.
5) detector is adhered on immersion lens. Select selenium arsenic compound film (adhesive) as mediumLayer makes selenium arsenic compound film softening under 150 degrees Celsius, exerts pressure the detector back side is adhered to germaniumIn monocrystalline packaged lens, make the sensitivity unit of detector and compensation unit lay respectively at germainium lens optically focused gonglion positionPut and fringe region, and put into drying box and at room temperature carry out 24 hours solidifying.
6) transition electrode spot welding. Use ultrasonic gold wire bonder (model is HKD-2320TS), utilize20 microns of spun golds are connected the electrode of detector with the transition electrode in germanium single crystal packaged lens.
7) wire bonds and device package. The positive and negative offset side that transition electrode is drawn and the electrode of signal endLead-in wire is welded to respectively on three pins that base is corresponding, covers metal shell. Back of the body incident immersed detctorTexture edge figure and top view are respectively as illustrated in fig. 1 and 2.
The advantage of this patent is: this panel detector structure has overcome in thermosensitive film type device because of body effectThe equivalent thermal capacitance causing is large, the shortcoming of signal cross-talk; Adopted the germanium single crystal that can assemble infrared signal simultaneouslyPackaged lens, focuses on less infrared signal in the sensitivity unit of detector, has significantly improved the sound of deviceShould rate and detectivity. Temperature-sensitive device based on this structure fabrication broken through conventional thin membranous type device responsiveness andThe limit of detectivity, has higher responsiveness, detectivity, and less time constant.
Brief description of the drawings:
Fig. 1 is back of the body incident immersed detctor side view, in figure: 1, positive bias voltage 2, signal outputEnd 3, negative bias voltage 4, germanium single crystal packaged lens 5, device compensation unit 6, the responsive unit 7 of device, devicePart shell 8, selenium arsenic film dielectric layer.
Fig. 2 is back of the body incident immersed detctor top view, in figure: 9, device electrode 10, transition electrode.
Fig. 3 is that the responsiveness of back of the body incident immersed detctor under positive and negative 10V bias voltage and detectivity are with frequentlyThe variation of rate.
Detailed description of the invention:
Below in conjunction with accompanying drawing, by instantiation, this patent is described in further details, but the guarantor of this patentThe scope of protecting is not limited to following instance.
Examples of implementation:
Based on Mn1.56Co0.96Ni0.48O4Thermosensitive material film, the panel detector structure that development this patent provides.Specifically realize by following steps.
(1) Mn1.56Co0.96Ni0.48O4The preparation of film
1) prepare precursor solution. Be Mn to target components1.56Co0.96Ni0.48O4Oxide, takes respectivelyFour water acetic acid manganese 91.76g, Cobalt diacetate tetrahydrate 57.39g, four water acetic acid nickel 28.66g, according to every 100g vinegarHydrochlorate adds the ratio of 400ml acetic acid, 100ml water that powder is dissolved, and pours the solution of negative pressure leaching machine into and containsIn dress ware, selecting aperture is the filter membrane of 0.45 μ m, carries out negative pressure leaching, the contamination precipitation in filtering solution,Obtain Mn1.56Co0.96Ni0.48O4Precursor solution, and it is for subsequent use to pack solution into liquid storage bottle.
2) prepare Mn1.56Co0.96Ni0.48O4Sull. Adopting chemical solution method is 15 millis in the length of sideRice, thickness are to prepare Mn on the amorphous nickel/phosphorus/aluminium oxide substrate of 100 microns1.56Co0.96Ni0.48O4Film, makesThickness is about the film of 6 microns.
(2) Mn1.56Co0.96Ni0.48O4The development of back of the body incident immersed detctor
3) etch mask. At Mn1.56Co0.96Ni0.48O4Film surface photolithography patterning, rear employing argon ionIt is the rectangular substrate of 5 millimeters that the sensitivity unit of device and compensation unit are produced on the length of side by/HBr wet-etching technologyTwo corner positions, area is 0.09mm2. Floating glue cleans.
4) be coated with chromium/gold electrode. At Mn1.56Co0.96Ni0.48O4Film surface photolithography patterning, rear employing fromThe chromium of sub-beam sputtering technique deposit 50 nanometers and the gold of 200 nanometers are as electrode. Floating glue cleans.
5) scribing. Mode by mechanical scribing by detector along responsive unit two sidelines with compensation unitCut, substrate breadth length ratio is 1:1, and width is 5 millimeters.
6) detector is adhered on immersion lens. Select diameter be 11 millimeters to be coated with selenium arsenic compound thinThe germanium single crystal hemisphere of film (adhesive), as collective optics, makes selenium arsenic compound film under 150 degrees CelsiusSoftening, exert pressure the detector back side be adhered in germanium single crystal packaged lens, make detector sensitivity unit andCompensation unit lays respectively at germainium lens optically focused gonglion position and fringe region, and puts into drying box at room temperatureCarry out 24 hours solidify.
7) transition electrode spot welding. Use ultrasonic gold wire bonder (model is HKD-2320TS), utilize20 microns of spun golds are connected the electrode of detector with the transition electrode in germanium single crystal packaged lens.
(3) Mn1.56Co0.96Ni0.48O4The packaging and testing of detector
8) wire bonds and device package. The positive and negative offset side that transition electrode is drawn and the electrode of signal endLead-in wire is welded to respectively on three pins that base is corresponding, covers metal shell.
9) test. Adopt black matrix as the source of infrared radiation, to Mn1.56Co0.96Ni0.48O4Back of the body incident immersionDetector is tested and is characterized. The device black matrix response that positive negative bias voltage is 10V is tied with change of frequencyFruit as shown in Figure 3. After tested, the thermosensitive film type Infrared Detectors based on this patent development has higherResponsiveness, detectivity, and less time constant, the Blackbody response sensitivily under normal temperature is about 2.5 ×103V/W30Hz, detectivity is about 7.6 × 108cm·Hz0.5/ W30Hz, time constant is 7 milliseconds.
Claims (1)
1. a back of the body incident immersion thermosensitive film type Infrared Detectors, is characterized in that: described in being deposited onThe substrate of thermosensitive film type Infrared Detectors on the responsive unit of device (6) and device compensation unit (5) distributionAt two corner positions of substrate, on the substrate back of described thermosensitive film type Infrared Detectors integrated oneCan assemble the germanium single crystal packaged lens (4) of infrared signal; Described germanium single crystal packaged lens (4) is refractionRate n=4, resistivity are greater than 30 Ω cm, plated surface and are shaped with the germanium hemisphere crystal of anti-reflecting layer, in its bottom surface platingHave as dielectric layer and Infrared Detectors and carry out bonding selenium arsenic compound film.
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| CN201410020924.8A CN103855238B (en) | 2014-01-17 | 2014-01-17 | A kind of back of the body incident immersion thermosensitive film type Infrared Detectors |
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| CN201410020924.8A CN103855238B (en) | 2014-01-17 | 2014-01-17 | A kind of back of the body incident immersion thermosensitive film type Infrared Detectors |
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| CN103855238B true CN103855238B (en) | 2016-05-18 |
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Families Citing this family (4)
| Publication number | Priority date | Publication date | Assignee | Title |
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| CN110160658B (en) * | 2019-05-17 | 2023-11-07 | 中国科学院上海技术物理研究所 | Etching enhancement type uncooled infrared film detector and preparation method thereof |
| CN110137299A (en) * | 2019-05-17 | 2019-08-16 | 中国科学院上海技术物理研究所 | A kind of enhanced Infrared Thin Films detector and preparation method based on silicon dielectric structure |
| CN110160659B (en) * | 2019-05-17 | 2023-09-12 | 中国科学院上海技术物理研究所 | Uncooled infrared narrow-band detector with etched sensitive elements and preparation method |
| CN110265491A (en) * | 2019-05-17 | 2019-09-20 | 中国科学院上海技术物理研究所 | A kind of the uncooled ir narrowband detector and preparation method on the super surface of silicon medium |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| RU2071147C1 (en) * | 1994-04-22 | 1996-12-27 | Валерий Игнатьевич Туринов | Immersion infrared photodetector |
| CN102200639A (en) * | 2011-06-15 | 2011-09-28 | 中国科学院上海技术物理研究所 | Infrared medium-long wave double wave band imaging optical system |
| CN203774352U (en) * | 2014-01-17 | 2014-08-13 | 中国科学院上海技术物理研究所 | Back-incident immersed type thermosensitive film infrared detector |
Family Cites Families (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS62119420A (en) * | 1985-11-20 | 1987-05-30 | Matsushita Electric Ind Co Ltd | Pyroelectric type infrared detection element |
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Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| RU2071147C1 (en) * | 1994-04-22 | 1996-12-27 | Валерий Игнатьевич Туринов | Immersion infrared photodetector |
| CN102200639A (en) * | 2011-06-15 | 2011-09-28 | 中国科学院上海技术物理研究所 | Infrared medium-long wave double wave band imaging optical system |
| CN203774352U (en) * | 2014-01-17 | 2014-08-13 | 中国科学院上海技术物理研究所 | Back-incident immersed type thermosensitive film infrared detector |
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